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AM4434N-CT Analog Power Inc.
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Description: MOSFET N-CH 30V 18.6A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 16.1A, 2.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2586 pF @ 15 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 42.59 грн |
11+ | 27.44 грн |
100+ | 24.7 грн |
500+ | 18.03 грн |
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Технічний опис AM4434N-CT Analog Power Inc.
Description: MOSFET N-CH 30V 18.6A SOIC-8, Packaging: Bulk, Package / Case: SOIC-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.6A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 16.1A, 2.5V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOIC-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): 12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2586 pF @ 15 V.