AM4431P-CT Analog Power Inc.
Виробник: Analog Power Inc.Description: MOSFET P-CH -30V 21A SOIC-8
Packaging: Bulk
Package / Case: SOIC-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ -250µA
Supplier Device Package: SOIC-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): -30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ -4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ -15 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.77 грн |
| 10+ | 52.67 грн |
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Технічний опис AM4431P-CT Analog Power Inc.
Description: MOSFET P-CH -30V 21A SOIC-8, Packaging: Bulk, Package / Case: SOIC-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8.5A, 4.5V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1V @ -250µA, Supplier Device Package: SOIC-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): -30 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ -4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ -15 V.