ADC6D10065E Analog Power Inc.
Виробник: Analog Power Inc.Description: DIODE SIL SIC 650V 35A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 650 V
на замовлення 2499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 333.26 грн |
| 10+ | 269.73 грн |
| 100+ | 218.19 грн |
| 500+ | 182.01 грн |
| 1000+ | 155.85 грн |
| 2000+ | 146.75 грн |
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Технічний опис ADC6D10065E Analog Power Inc.
Description: DIODE SIL SIC 650V 35A TO252-2, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 6.3pF @ 0V, 100kHz, Current - Average Rectified (Io): 35A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 650 V.