A3G26H502W17SR3 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF MOSFET GAN 48V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780-4S2S
Mounting Type: Chassis Mount
Frequency: 2.496GHz ~ 2.69GHz
Configuration: 2 N-Channel
Power - Output: 80W
Gain: 13.1dB
Technology: GaN
Supplier Device Package: NI-780-4S2S
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 370 mA
Description: RF MOSFET GAN 48V NI780
Packaging: Tape & Reel (TR)
Package / Case: NI-780-4S2S
Mounting Type: Chassis Mount
Frequency: 2.496GHz ~ 2.69GHz
Configuration: 2 N-Channel
Power - Output: 80W
Gain: 13.1dB
Technology: GaN
Supplier Device Package: NI-780-4S2S
Voltage - Rated: 125 V
Voltage - Test: 48 V
Current - Test: 370 mA
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Технічний опис A3G26H502W17SR3 NXP USA Inc.
Description: RF MOSFET GAN 48V NI780, Packaging: Tape & Reel (TR), Package / Case: NI-780-4S2S, Mounting Type: Chassis Mount, Frequency: 2.496GHz ~ 2.69GHz, Configuration: 2 N-Channel, Power - Output: 80W, Gain: 13.1dB, Technology: GaN, Supplier Device Package: NI-780-4S2S, Voltage - Rated: 125 V, Voltage - Test: 48 V, Current - Test: 370 mA.
Інші пропозиції A3G26H502W17SR3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| A3G26H502W17SR3 | Виробник : NXP Semiconductors |
 RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 80 W Avg., 48 V |
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