Результат пошуку "565933" : 11
Вид перегляду :
Мінімальне замовлення: 1450
Мінімальне замовлення: 338
| Фото | Назва | Виробник | Інформація |
Доступність |
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S25FL512SAGMFIR13 | Infineon Technologies |
 Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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S25FL512SAGMFIR13 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 2877 шт: термін постачання 21-31 дні (днів) |
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S27KL0642GABHI020 | Infineon Technologies |
DRAM Chip DDR SDRAM 64Mbit 8Mx8 3V/3.3V 24-Pin Fortified BGA Tray |
на замовлення 676 шт: термін постачання 21-31 дні (днів) |
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| MAL205659332E3 | Vishay |
Cap Aluminum Lytic 3300uF 100V 20% (35 X 40mm) Snap-In 0.1 Ohm 2840mA 5000h 85C Bulk |
товар відсутній |
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MAL205659332E3 | Vishay Beyschlag/Draloric/BC Components |
Description: CAP ALUM 3300UF 20% 100V SNAP Tolerance: ±20% Packaging: Tape & Box (TB) Package / Case: Radial, Can - Snap-In Size / Dimension: 1.378" Dia (35.00mm) Polarization: Polar Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Applications: Audio Lead Spacing: 0.394" (10.00mm) ESR (Equivalent Series Resistance): 100mOhm @ 100Hz Lifetime @ Temp.: 12000 Hrs @ 85°C Height - Seated (Max): 1.654" (42.00mm) Part Status: Active Capacitance: 3300 µF Voltage - Rated: 100 V Impedance: 95 mOhms Ripple Current @ Low Frequency: 2.84 A @ 100 Hz |
товар відсутній |
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MAL215659332E3 | Vishay Beyschlag/Draloric/BC Components |
Description: CAP ALUM 3300UF 20% 100V SNAP Packaging: Bulk Tolerance: ±20% Package / Case: Radial, Can - Snap-In - 3 Lead Size / Dimension: 1.181" Dia (30.00mm) Polarization: Polar Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Applications: General Purpose Lead Spacing: 0.394" (10.00mm) ESR (Equivalent Series Resistance): 123mOhm @ 100Hz Lifetime @ Temp.: 5000 Hrs @ 85°C Height - Seated (Max): 1.654" (42.00mm) Part Status: Active Capacitance: 3300 µF Voltage - Rated: 100 V Impedance: 116 mOhms Ripple Current @ Low Frequency: 3.32 A @ 100 Hz |
товар відсутній |
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| 75 1"X36YD | 3M |
Description: 3M POLYESTER FILM ELECTRICAL TAP Packaging: Bulk Part Status: Active |
товар відсутній |
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CY9AF312KPMC-G-103-JNE2 | Infineon Technologies |
Description: MULTI-MARKET MCUS Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 8x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Active Number of I/O: 36 |
товар відсутній |
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| CY9AF312KPMC-G-103-JNE2 | Infineon Technologies |
MM Microcontroller Product |
товар відсутній |
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S25FL512SAGMFIR13 | Infineon Technologies |
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 14.5ns 16-Pin SOIC W T/R |
товар відсутній |
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S27KL0642GABHI020 | Infineon Technologies |
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
| S25FL512SAGMFIR13 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1450+ | 484.36 грн |
| S25FL512SAGMFIR13 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 2877 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 671.7 грн |
| 10+ | 599.2 грн |
| 25+ | 585.64 грн |
| 50+ | 546.66 грн |
| 100+ | 481.23 грн |
| 250+ | 457.35 грн |
| 500+ | 445.34 грн |
| S27KL0642GABHI020 |
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Виробник: Infineon Technologies
DRAM Chip DDR SDRAM 64Mbit 8Mx8 3V/3.3V 24-Pin Fortified BGA Tray
DRAM Chip DDR SDRAM 64Mbit 8Mx8 3V/3.3V 24-Pin Fortified BGA Tray
на замовлення 676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 338+ | 144.73 грн |
| MAL205659332E3 |
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Виробник: Vishay
Cap Aluminum Lytic 3300uF 100V 20% (35 X 40mm) Snap-In 0.1 Ohm 2840mA 5000h 85C Bulk
Cap Aluminum Lytic 3300uF 100V 20% (35 X 40mm) Snap-In 0.1 Ohm 2840mA 5000h 85C Bulk
товар відсутній
| MAL205659332E3 |
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Виробник: Vishay Beyschlag/Draloric/BC Components
Description: CAP ALUM 3300UF 20% 100V SNAP
Tolerance: ±20%
Packaging: Tape & Box (TB)
Package / Case: Radial, Can - Snap-In
Size / Dimension: 1.378" Dia (35.00mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Audio
Lead Spacing: 0.394" (10.00mm)
ESR (Equivalent Series Resistance): 100mOhm @ 100Hz
Lifetime @ Temp.: 12000 Hrs @ 85°C
Height - Seated (Max): 1.654" (42.00mm)
Part Status: Active
Capacitance: 3300 µF
Voltage - Rated: 100 V
Impedance: 95 mOhms
Ripple Current @ Low Frequency: 2.84 A @ 100 Hz
Description: CAP ALUM 3300UF 20% 100V SNAP
Tolerance: ±20%
Packaging: Tape & Box (TB)
Package / Case: Radial, Can - Snap-In
Size / Dimension: 1.378" Dia (35.00mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: Audio
Lead Spacing: 0.394" (10.00mm)
ESR (Equivalent Series Resistance): 100mOhm @ 100Hz
Lifetime @ Temp.: 12000 Hrs @ 85°C
Height - Seated (Max): 1.654" (42.00mm)
Part Status: Active
Capacitance: 3300 µF
Voltage - Rated: 100 V
Impedance: 95 mOhms
Ripple Current @ Low Frequency: 2.84 A @ 100 Hz
товар відсутній
| MAL215659332E3 |
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Виробник: Vishay Beyschlag/Draloric/BC Components
Description: CAP ALUM 3300UF 20% 100V SNAP
Packaging: Bulk
Tolerance: ±20%
Package / Case: Radial, Can - Snap-In - 3 Lead
Size / Dimension: 1.181" Dia (30.00mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
ESR (Equivalent Series Resistance): 123mOhm @ 100Hz
Lifetime @ Temp.: 5000 Hrs @ 85°C
Height - Seated (Max): 1.654" (42.00mm)
Part Status: Active
Capacitance: 3300 µF
Voltage - Rated: 100 V
Impedance: 116 mOhms
Ripple Current @ Low Frequency: 3.32 A @ 100 Hz
Description: CAP ALUM 3300UF 20% 100V SNAP
Packaging: Bulk
Tolerance: ±20%
Package / Case: Radial, Can - Snap-In - 3 Lead
Size / Dimension: 1.181" Dia (30.00mm)
Polarization: Polar
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Applications: General Purpose
Lead Spacing: 0.394" (10.00mm)
ESR (Equivalent Series Resistance): 123mOhm @ 100Hz
Lifetime @ Temp.: 5000 Hrs @ 85°C
Height - Seated (Max): 1.654" (42.00mm)
Part Status: Active
Capacitance: 3300 µF
Voltage - Rated: 100 V
Impedance: 116 mOhms
Ripple Current @ Low Frequency: 3.32 A @ 100 Hz
товар відсутній
| 75 1"X36YD |
товар відсутній
| CY9AF312KPMC-G-103-JNE2 |
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 36
товар відсутній
| S25FL512SAGMFIR13 |
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Виробник: Infineon Technologies
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 14.5ns 16-Pin SOIC W T/R
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 14.5ns 16-Pin SOIC W T/R
товар відсутній
| S27KL0642GABHI020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товар відсутній