Результат пошуку "562959" : 10
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
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IMDQ75R040M1HXUMA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 6mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V |
на замовлення 694 шт: термін постачання 21-31 дні (днів) |
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IMDQ75R040M1HXUMA1 | Infineon Technologies |
SiC MOSFETs Y |
на замовлення 725 шт: термін постачання 21-30 дні (днів) |
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| FZTRL7N7NBNM032 | Panduit Corp |
Description: OM4 12 FIBER INTERCONNECT LSZH P Packaging: Bulk |
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| FZTRL7N7NBNM033 | Panduit Corp |
Description: OM4 12 FIBER INTERCONNECT LSZH P Packaging: Bulk |
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| FZTRL7N7NBNM036 | Panduit Corp |
Description: OM4 12 FIBER INTERCONNECT LSZH P Packaging: Bulk |
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| FZTRL7N7NBNM039 | Panduit Corp |
Description: OM4 12 FIBER INTERCONNECT LSZH P Packaging: Bulk |
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| FZTRL7N7NBNM040 | Panduit Corp |
Description: OM4 12 FIBER INTERCONNECT LSZH P Packaging: Bulk |
товар відсутній |
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| IMDQ75R040M1HXUMA1 | Infineon Technologies |
Trans MOSFET N-CH SiC 750V 47A T/R |
товар відсутній |
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IMDQ75R040M1HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 6mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V |
товар відсутній |
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OM7693/BFU730F,598 | NXP USA Inc. |
Description: EVAL BOARD FOR BFU730F Packaging: Box For Use With/Related Products: BFU730F Frequency: 10.75GHz ~ 12.75GHz Type: Amplifier Supplied Contents: Board(s) |
товар відсутній |
| IMDQ75R040M1HXUMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 764.12 грн |
| 10+ | 664.78 грн |
| 25+ | 633.82 грн |
| 100+ | 516.49 грн |
| 250+ | 493.27 грн |
| IMDQ75R040M1HXUMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs Y
SiC MOSFETs Y
на замовлення 725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 853.49 грн |
| 10+ | 721.35 грн |
| 25+ | 568.99 грн |
| 100+ | 522.24 грн |
| 250+ | 492.02 грн |
| 500+ | 461.81 грн |
| 750+ | 415.06 грн |
| FZTRL7N7NBNM032 |
товар відсутній
| FZTRL7N7NBNM033 |
товар відсутній
| FZTRL7N7NBNM036 |
товар відсутній
| FZTRL7N7NBNM039 |
товар відсутній
| FZTRL7N7NBNM040 |
товар відсутній
| IMDQ75R040M1HXUMA1 |
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Виробник: Infineon Technologies
Trans MOSFET N-CH SiC 750V 47A T/R
Trans MOSFET N-CH SiC 750V 47A T/R
товар відсутній
| IMDQ75R040M1HXUMA1 |
|
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
товар відсутній
| OM7693/BFU730F,598 |
|
Виробник: NXP USA Inc.
Description: EVAL BOARD FOR BFU730F
Packaging: Box
For Use With/Related Products: BFU730F
Frequency: 10.75GHz ~ 12.75GHz
Type: Amplifier
Supplied Contents: Board(s)
Description: EVAL BOARD FOR BFU730F
Packaging: Box
For Use With/Related Products: BFU730F
Frequency: 10.75GHz ~ 12.75GHz
Type: Amplifier
Supplied Contents: Board(s)
товар відсутній