2SD2096T114E Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: TRANS NPN 60V 3A HRT
Packaging: Tape & Reel (TR)
Package / Case: HRT
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 8MHz
Supplier Device Package: HRT
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис 2SD2096T114E Rohm Semiconductor
Description: TRANS NPN 60V 3A HRT, Packaging: Tape & Reel (TR), Package / Case: HRT, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V, Frequency - Transition: 8MHz, Supplier Device Package: HRT, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.