2SD1862TV2P Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS GP BJT NPN 32V 2A 3-PIN AT
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Supplier Device Package: ATV
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Description: TRANS GP BJT NPN 32V 2A 3-PIN AT
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Supplier Device Package: ATV
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
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Технічний опис 2SD1862TV2P Rohm Semiconductor
Description: TRANS GP BJT NPN 32V 2A 3-PIN AT, Packaging: Tape & Reel (TR), Package / Case: 3-SIP, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V, Supplier Device Package: ATV, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 1 W.