2SD1859TV2P Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS GP BJT NPN 80V 0.7A 3-PIN
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Supplier Device Package: ATV
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS GP BJT NPN 80V 0.7A 3-PIN
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Supplier Device Package: ATV
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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Технічний опис 2SD1859TV2P Rohm Semiconductor
Description: TRANS GP BJT NPN 80V 0.7A 3-PIN, Packaging: Tape & Box (TB), Package / Case: 3-SIP, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V, Supplier Device Package: ATV, Part Status: Active, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1 W.