2SC6017-H-TL-E Sanyo
Виробник: SanyoDescription: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: DPAK/TP-FA
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
на замовлення 1314 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1314+ | 19.14 грн |
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Технічний опис 2SC6017-H-TL-E Sanyo
Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Part Status: Active, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 200MHz, Supplier Device Package: DPAK/TP-FA, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 950 mW.