2SC3595D Sanyo
Виробник: SanyoDescription: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 2GHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.2 W
на замовлення 7513 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 452+ | 46.02 грн |
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Технічний опис 2SC3595D Sanyo
Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Part Status: Active, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Frequency - Transition: 2GHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 1.2 W.