2SC3393T-AC-ON onsemi
Виробник: onsemi
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Description: NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: 3-SPA
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2664+ | 7.67 грн |
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Технічний опис 2SC3393T-AC-ON onsemi
Description: NPN EPITAXIAL PLANAR SILICON, Packaging: Bulk, Package / Case: 3-SSIP, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Frequency - Transition: 200MHz, Supplier Device Package: 3-SPA, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW.