2SB927S-AE onsemi
Виробник: onsemiDescription: TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 296+ | 69.48 грн |
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Технічний опис 2SB927S-AE onsemi
Description: TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 75mA, 1.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-MP, Current - Collector (Ic) (Max): 2.5 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 1 W.