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2SB1274R-SA-ON onsemi

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Виробник: onsemi
Description: PNP EPITAXIAL PLANAR SILICON
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220ML
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W

на замовлення 34325 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
1902+	11.07 грн

Мінімальне замовлення: 1902

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Технічний опис 2SB1274R-SA-ON onsemi

Description: PNP EPITAXIAL PLANAR SILICON, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-220ML, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.