Технічний опис 2N6806 MOT
Description: POWER FIELD-EFFECT TRANSISTOR, P, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 6.5A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-204AA (TO-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.
Інші пропозиції 2N6806
Фото | Назва | Виробник | Інформація |
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2N6806 | Виробник : International Rectifier |
Description: POWER FIELD-EFFECT TRANSISTOR, P Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 6.5A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AA (TO-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
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2N6806 | Виробник : Infineon / IR | MOSFETs |
товар відсутній |