1N6864US Microchip Technology
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 80V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 80 V
Description: DIODE SCHOTTKY 80V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 80 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 10686.66 грн |
Відгуки про товар
Написати відгук
Технічний опис 1N6864US Microchip Technology
Description: DIODE SCHOTTKY 80V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A, Current - Reverse Leakage @ Vr: 150 µA @ 80 V.