1N6376HE3/51

1N6376HE3/51 Vishay General Semiconductor - Diodes Division


ICTE5-18C,_1N6373-86_Sep.22.16.pdf Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 16.5VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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Технічний опис 1N6376HE3/51 Vishay General Semiconductor - Diodes Division

Description: TVS DIODE 12VWM 16.5VC 1.5KE, Packaging: Bulk, Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: Automotive, Current - Peak Pulse (10/1000µs): 70A, Voltage - Reverse Standoff (Typ): 12V, Supplier Device Package: 1.5KE, Unidirectional Channels: 1, Voltage - Breakdown (Min): 14.1V, Voltage - Clamping (Max) @ Ipp: 16.5V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No.