Технічний опис 15KPA110A-B Littelfuse
Description: TVS DIODE 110VWM 178.6VC P600, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 84.5A, Voltage - Reverse Standoff (Typ): 110V, Supplier Device Package: P600, Unidirectional Channels: 1, Voltage - Breakdown (Min): 122.9V, Voltage - Clamping (Max) @ Ipp: 178.6V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції 15KPA110A-B
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15KPA110A-B | Виробник : LITTELFUSE |
 Category: Unidirectional THT transil diodesDescription: Diode: TVS; 15kW; 128.7V; 84.5A; unidirectional; ±5%; P600; bulk Mounting: THT Peak pulse power dissipation: 15kW Case: P600 Tolerance: ±5% Max. off-state voltage: 110V Semiconductor structure: unidirectional Max. forward impulse current: 84.5A Breakdown voltage: 128.7V Leakage current: 2µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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15KPA110A-B | Виробник : Littelfuse Inc. |
Description: TVS DIODE 110VWM 178.6VC P600 Packaging: Bulk Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 84.5A Voltage - Reverse Standoff (Typ): 110V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 122.9V Voltage - Clamping (Max) @ Ipp: 178.6V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
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15KPA110A-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes 15000W 110V TVS Axial Leaded |
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15KPA110A/B | Виробник : YAGEO |
ESD Suppressors / TVS Diodes 15KPA P600 110V 178.6V |
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15KPA110A-B | Виробник : LITTELFUSE |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 15kW; 128.7V; 84.5A; unidirectional; ±5%; P600; bulk Mounting: THT Peak pulse power dissipation: 15kW Case: P600 Tolerance: ±5% Max. off-state voltage: 110V Semiconductor structure: unidirectional Max. forward impulse current: 84.5A Breakdown voltage: 128.7V Leakage current: 2µA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated |
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