Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (27806) > Сторінка 253 з 464
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
74ALVCH16245DL,112 | Nexperia USA Inc. |
![]() |
на замовлення 1562 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74ALVCH16501DGGS | Nexperia USA Inc. |
![]() |
на замовлення 595 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BZX884-C24,315 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
|||||||||||||||||
![]() |
BZX884-C24,315 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
|||||||||||||||||
![]() |
BZX38450-C5V1-QX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
товар відсутній |
|||||||||||||||||
![]() |
BZX38450-C5V1-QX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
на замовлення 1688 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IP4254CZ12-6-TTL,1 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-UFDFN Exposed Pad Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 30pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 28dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: LAN, WAN Technology: RC (Pi) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 6 |
товар відсутній |
|||||||||||||||||
74LVC2G14GW | Nexperia USA Inc. |
Description: INVERTER, LVC/LCX/Z SERIES, 2-FU Features: Schmitt Trigger Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-TSSOP Input Logic Level - High: 1.7V ~ 3.8V Input Logic Level - Low: 0.25V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 4 µA |
товар відсутній |
||||||||||||||||||
![]() |
2N7002KQBZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 720mA (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V Power Dissipation (Max): 420mW (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
2N7002KQBZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 720mA (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V Power Dissipation (Max): 420mW (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 30450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74LVC2G32GXX | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 8-X2SON (1.35x0.8) Input Logic Level - High: 0.95V ~ 3.4V Input Logic Level - Low: 0.1V ~ 0.8V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 4 µA |
на замовлення 58353 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
BZX84-C9V1/DG/B4VL | Nexperia USA Inc. |
![]() |
товар відсутній |
||||||||||||||||||
BZX84-C9V1/DG/B3:2 | Nexperia USA Inc. |
![]() |
товар відсутній |
||||||||||||||||||
![]() |
PSMN057-200P,127 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
на замовлення 2657 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PSMN057-200P,127 | Nexperia USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
товар відсутній |
|||||||||||||||||
|
PXP011-20QXJ | Nexperia USA Inc. |
Description: PXP011-20QX/SOT8002/MLPAK33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V |
товар відсутній |
|||||||||||||||||
|
PXP011-20QXJ | Nexperia USA Inc. |
Description: PXP011-20QX/SOT8002/MLPAK33 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856AQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856AQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856AQCZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856AQCZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
74AHCT1G79GW125 | Nexperia USA Inc. |
![]() |
товар відсутній |
||||||||||||||||||
![]() |
74AUP1G80GF132 | Nexperia USA Inc. |
![]() |
товар відсутній |
|||||||||||||||||
![]() |
74LVC1G80GM,115 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 6-XFDFN Output Type: Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 200 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 400 MHz Input Capacitance: 5 pF Supplier Device Package: 6-XSON (1.45x1) Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 159792 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856BQCZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856BQCZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 22390 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856BQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856BQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PZU7.5B,115 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 4 V Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
|||||||||||||||||
![]() |
PZU7.5B,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323F Part Status: Active Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 4 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PMEG4005ESF315 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PMEG4005EGW,115 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
товар відсутній |
|||||||||||||||||
|
PMEG4005EH/6X | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 43pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товар відсутній |
|||||||||||||||||
|
PSMN1R5-50YLHX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PSMN1R5-50YLHX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V |
на замовлення 4229 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PSMN1R2-55SLHAX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товар відсутній |
|||||||||||||||||
![]() |
PSMN1R2-55SLHAX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|||||||||||||||||
![]() |
PSMN1R2-55SLH | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товар відсутній |
|||||||||||||||||
![]() |
PSMN1R2-55SLH | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
на замовлення 1975 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PSMN1R2-25YLD,115 | Nexperia USA Inc. | Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2 |
товар відсутній |
|||||||||||||||||
PSMN1R7-25YLD115 | Nexperia USA Inc. |
![]() Packaging: Bulk |
товар відсутній |
||||||||||||||||||
![]() |
PSMN1R1-30EL,127 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74HCT10DB,112 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
на замовлення 4056 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PXP6R1-30QLJ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
товар відсутній |
|||||||||||||||||
|
PXP6R1-30QLJ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
на замовлення 1084 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74AHCT1G125GF,132 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 6-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 6-XSON, SOT891 (1x1) Part Status: Obsolete |
на замовлення 130643 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74HC20PW118 | Nexperia USA Inc. | Description: IC GATE NAND 2CH 4-INP 14TSSOP |
товар відсутній |
|||||||||||||||||
![]() |
PUMT1 | Nexperia USA Inc. |
![]() |
товар відсутній |
|||||||||||||||||
|
PXN5R4-30QLJ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PXN5R4-30QLJ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 34889 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BZX58550-C62-QX | Nexperia USA Inc. |
![]() |
товар відсутній |
|||||||||||||||||
![]() |
BZX58550-C62-QX | Nexperia USA Inc. |
![]() |
товар відсутній |
|||||||||||||||||
|
BCV28,115 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.3 W Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
|||||||||||||||||
|
BCV28,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.3 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 810 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74AUP2G02GD,125 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.8V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 8-XSON (2x3) Input Logic Level - High: 1.6V ~ 2V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF Part Status: Obsolete Number of Circuits: 2 Current - Quiescent (Max): 500 nA |
товар відсутній |
|||||||||||||||||
![]() |
74LVC1G08GF/S500,1 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
на замовлення 245000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74LVC1G08GM,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-XSON, SOT886 (1.45x1) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 4 µA |
на замовлення 21937 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PESD3USB30Z | Nexperia USA Inc. |
![]() |
на замовлення 17350 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
PESD3USB3S/CZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 15-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.45pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 15-WLCSP (2.37x1.17) Unidirectional Channels: 3 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
товар відсутній |
||||||||||||||||||
![]() |
PESD2USB3S/CZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.45pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 10-WLCSP (1.57x1.17) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
товар відсутній |
74ALVCH16245DL,112 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 48SSOP
Description: IC TXRX NON-INVERT 3.6V 48SSOP
на замовлення 1562 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
441+ | 51.48 грн |
74ALVCH16501DGGS |
![]() |
Виробник: Nexperia USA Inc.
Description: IC UNIV BUS TXRX 18BIT 56TSSOP
Description: IC UNIV BUS TXRX 18BIT 56TSSOP
на замовлення 595 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
402+ | 57.07 грн |
BZX884-C24,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 24V 250MW DFN1006-2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 24V 250MW DFN1006-2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
BZX884-C24,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 24V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 24V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
BZX38450-C5V1-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX38450-C5V1-Q/SOD323/SOD2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: BZX38450-C5V1-Q/SOD323/SOD2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
товар відсутній
BZX38450-C5V1-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX38450-C5V1-Q/SOD323/SOD2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: BZX38450-C5V1-Q/SOD323/SOD2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 1688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 18.09 грн |
21+ | 14.37 грн |
100+ | 7.63 грн |
500+ | 4.71 грн |
1000+ | 3.2 грн |
IP4254CZ12-6-TTL,1 |
![]() |
Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) 100 OHM/30PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 28dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
Description: FILTER RC(PI) 100 OHM/30PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 28dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
товар відсутній
74LVC2G14GW |
Виробник: Nexperia USA Inc.
Description: INVERTER, LVC/LCX/Z SERIES, 2-FU
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-TSSOP
Input Logic Level - High: 1.7V ~ 3.8V
Input Logic Level - Low: 0.25V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
Description: INVERTER, LVC/LCX/Z SERIES, 2-FU
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-TSSOP
Input Logic Level - High: 1.7V ~ 3.8V
Input Logic Level - Low: 0.25V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
товар відсутній
2N7002KQBZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Qualification: AEC-Q101
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 4.55 грн |
10000+ | 3.79 грн |
25000+ | 3.72 грн |
2N7002KQBZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Qualification: AEC-Q101
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Qualification: AEC-Q101
на замовлення 30450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.39 грн |
17+ | 17.86 грн |
100+ | 9 грн |
500+ | 6.89 грн |
1000+ | 5.11 грн |
2000+ | 4.3 грн |
74LVC2G32GXX |
![]() |
Виробник: Nexperia USA Inc.
Description: IC GATE OR 2CH 2-INP 8X2SON
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-X2SON (1.35x0.8)
Input Logic Level - High: 0.95V ~ 3.4V
Input Logic Level - Low: 0.1V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
Description: IC GATE OR 2CH 2-INP 8X2SON
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-X2SON (1.35x0.8)
Input Logic Level - High: 0.95V ~ 3.4V
Input Logic Level - Low: 0.1V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
на замовлення 58353 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1715+ | 11.83 грн |
BZX84-C9V1/DG/B4VL |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.05V 250MW TO236AB
Description: DIODE ZENER 9.05V 250MW TO236AB
товар відсутній
BZX84-C9V1/DG/B3:2 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.05V 250MW TO236AB
Description: DIODE ZENER 9.05V 250MW TO236AB
товар відсутній
PSMN057-200P,127 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 200V 39A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: MOSFET N-CH 200V 39A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
на замовлення 2657 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
198+ | 104.73 грн |
PSMN057-200P,127 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 200V 39A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: MOSFET N-CH 200V 39A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
товар відсутній
PXP011-20QXJ |
Виробник: Nexperia USA Inc.
Description: PXP011-20QX/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Description: PXP011-20QX/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
товар відсутній
PXP011-20QXJ |
Виробник: Nexperia USA Inc.
Description: PXP011-20QX/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Description: PXP011-20QX/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.74 грн |
10+ | 39.78 грн |
25+ | 37.34 грн |
100+ | 28.59 грн |
250+ | 26.56 грн |
500+ | 22.6 грн |
1000+ | 17.78 грн |
BC856AQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.02 грн |
BC856AQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.34 грн |
25+ | 11.76 грн |
100+ | 5.75 грн |
500+ | 4.5 грн |
1000+ | 3.13 грн |
2000+ | 2.71 грн |
BC856AQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.66 грн |
BC856AQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 16.59 грн |
26+ | 11.25 грн |
100+ | 5.49 грн |
500+ | 4.3 грн |
1000+ | 2.98 грн |
2000+ | 2.59 грн |
74AHCT1G79GW125 |
![]() |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74AHCT1G79GW-Q100 -
Description: NOW NEXPERIA 74AHCT1G79GW-Q100 -
товар відсутній
74LVC1G80GM,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 200 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 400 MHz
Input Capacitance: 5 pF
Supplier Device Package: 6-XSON (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 200 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 400 MHz
Input Capacitance: 5 pF
Supplier Device Package: 6-XSON (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 159792 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4653+ | 4.13 грн |
BC856BQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.94 грн |
10000+ | 1.61 грн |
BC856BQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 22390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 16.59 грн |
26+ | 11.4 грн |
100+ | 5.54 грн |
500+ | 4.34 грн |
1000+ | 3.01 грн |
2000+ | 2.61 грн |
BC856BQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.78 грн |
BC856BQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.34 грн |
25+ | 11.76 грн |
100+ | 5.75 грн |
500+ | 4.5 грн |
1000+ | 3.13 грн |
2000+ | 2.71 грн |
PZU7.5B,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 7.5V 310MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
PZU7.5B,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 7.5V 310MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 23.37 грн |
19+ | 15.75 грн |
100+ | 7.67 грн |
500+ | 6.01 грн |
1000+ | 4.17 грн |
PMEG4005ESF315 |
![]() |
Виробник: Nexperia USA Inc.
Description: NEXPERIA PMEG4005ESF - RECTIFIER
Packaging: Bulk
Part Status: Active
Description: NEXPERIA PMEG4005ESF - RECTIFIER
Packaging: Bulk
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7969+ | 2.85 грн |
PMEG4005EGW,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Packaging: Bulk
Part Status: Active
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Packaging: Bulk
Part Status: Active
товар відсутній
PMEG4005EH/6X |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
товар відсутній
PSMN1R5-50YLHX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 79.62 грн |
PSMN1R5-50YLHX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
на замовлення 4229 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 262.35 грн |
10+ | 212.12 грн |
100+ | 171.59 грн |
500+ | 143.13 грн |
PSMN1R2-55SLHAX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
товар відсутній
PSMN1R2-55SLHAX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)PSMN1R2-55SLH |
![]() |
Виробник: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
товар відсутній
PSMN1R2-55SLH |
![]() |
Виробник: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 275.16 грн |
10+ | 238.11 грн |
100+ | 195.07 грн |
500+ | 155.84 грн |
1000+ | 131.43 грн |
PSMN1R2-25YLD,115 |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
товар відсутній
PSMN1R7-25YLD115 |
![]() |
товар відсутній
PSMN1R1-30EL,127 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
333+ | 67.85 грн |
74HCT10DB,112 |
![]() |
на замовлення 4056 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1293+ | 16.23 грн |
PXP6R1-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
товар відсутній
PXP6R1-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
на замовлення 1084 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 72.37 грн |
10+ | 57.2 грн |
100+ | 44.48 грн |
500+ | 35.38 грн |
1000+ | 28.82 грн |
74AHCT1G125GF,132 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
на замовлення 130643 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1880+ | 11.14 грн |
PXN5R4-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 14.96 грн |
PXN5R4-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 34889 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.66 грн |
11+ | 26.64 грн |
100+ | 18.42 грн |
500+ | 14.44 грн |
1000+ | 13.52 грн |
BCV28,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP DARL 30V 0.5A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
BCV28,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP DARL 30V 0.5A SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 810 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.66 грн |
12+ | 26.06 грн |
100+ | 18.1 грн |
500+ | 13.26 грн |
74AUP2G02GD,125 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC GATE NOR 2CH 2-INP 8XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 8-XSON (2x3)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
Description: IC GATE NOR 2CH 2-INP 8XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 8-XSON (2x3)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 500 nA
товар відсутній
74LVC1G08GF/S500,1 |
![]() |
на замовлення 245000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
720+ | 28.87 грн |
74LVC1G08GM,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
на замовлення 21937 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.92 грн |
12+ | 24.75 грн |
25+ | 22.33 грн |
100+ | 14.47 грн |
250+ | 12.19 грн |
500+ | 9.9 грн |
1000+ | 7.49 грн |
2500+ | 6.74 грн |
PESD3USB30Z |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 15WLCSP
Description: TVS DIODE 5.5VWM 15WLCSP
на замовлення 17350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1159+ | 18.63 грн |
PESD3USB3S/CZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 15-WLCSP (2.37x1.17)
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 15-WLCSP (2.37x1.17)
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
товар відсутній
PESD2USB3S/CZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
товар відсутній