Продукція > NEC CORPORATION > Всі товари виробника NEC CORPORATION (46) > Сторінка 1 з 1
Фото | Назва | Виробник | Інформація |
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2SA954-A | NEC Corporation |
Description: TRANS PNP 80V 0.3A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 600 mW |
на замовлення 109932 шт: термін постачання 21-31 дні (днів) |
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2SC1841-A | NEC Corporation |
Description: 0.05A, 120V, NPN, TO-92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 110MHz Supplier Device Package: TO-92 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
на замовлення 73522 шт: термін постачання 21-31 дні (днів) |
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2SC3731-T-A | NEC Corporation |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Part Status: Active |
на замовлення 42500 шт: термін постачання 21-31 дні (днів) |
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2SC945A-T-A | NEC Corporation |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Part Status: Active |
на замовлення 665000 шт: термін постачання 21-31 дні (днів) |
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2SJ606-ZK-E1-AY | NEC Corporation |
Description: P-CHANNEL SWITCHING POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 83A Rds On (Max) @ Id, Vgs: 15mOhm @ 42A, 10V Power Dissipation (Max): 120W Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220SMD Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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2SK1482-T-AZ | NEC Corporation |
Description: SMALL SIGNAL FET Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V Power Dissipation (Max): 750W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
на замовлення 2162 шт: термін постачання 21-31 дні (днів) |
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2SK3058-Z-E1-AZ | NEC Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V Power Dissipation (Max): 1.5W Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-263, TO-220SMD Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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2SK3634-Z-AZ | NEC Corporation |
Description: 6A, 200V, N-CHANNEL MOSFET Packaging: Bulk Technology: MOSFET (Metal Oxide) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V |
на замовлення 8307 шт: термін постачання 21-31 дні (днів) |
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2SK4028-T1-A | NEC Corporation |
Description: N-CHANNEL SMALL SIGNAL MOSFET Packaging: Bulk Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 2V Current Drain (Id) - Max: 10 mA Supplier Device Package: 3pXSOF03 Part Status: Active Drain to Source Voltage (Vdss): 20 V Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 90 µA @ 2 V Power - Max: 100 W |
товар відсутній |
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2SK4070-ZK-E2-AY | NEC Corporation |
Description: N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Ta), 22W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2SK4076-ZK-E1-AY | NEC Corporation |
Description: N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 17.5A, 10V Power Dissipation (Max): 1W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 (MP-3ZK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AN1L3N | NEC Corporation |
Description: TRANS PREBIAS PNP 50V 0.1A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
на замовлення 56894 шт: термін постачання 21-31 дні (днів) |
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FS70UMJ-06F | NEC Corporation |
Description: 70A, 60V, N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 36A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 10 V |
на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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HRC0103ATRF-E | NEC Corporation |
Description: SCHOTTKY DIODE Packaging: Bulk Part Status: Obsolete |
на замовлення 76142 шт: термін постачання 21-31 дні (днів) |
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HZM6.2NB2TR-E | NEC Corporation |
Description: ZENER DIODE, 6.2V, 0.2W Packaging: Bulk |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NP32N055HLE-AZ | NEC Corporation |
Description: 32A, 55V, 0.033OHM, N-CHANNEL , Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V Power Dissipation (Max): 1.2W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (MP-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NP32N055SHE-E1-AZ | NEC Corporation |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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NP80N03MDE-S18-AY | NEC Corporation |
Description: 80A, 30V, 0.011OHM, N-CHANNEL , Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: MP-25K Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V |
на замовлення 700 шт: термін постачання 21-31 дні (днів) |
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NP80N04NDG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 80A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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NP80N04NLG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 80A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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NP80N055MDG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 55V 80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V Power Dissipation (Max): 1.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
на замовлення 6350 шт: термін постачання 21-31 дні (днів) |
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NP82N04NDG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 82A 3LDPAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 3-LDPAK Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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NP82N04NLG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 40V 82A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 25 V |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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NP82N055MUG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 55V 82A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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NP82N055NUG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 55V 82A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V |
на замовлення 1100 шт: термін постачання 21-31 дні (днів) |
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NP82N06NLG-S18-AY | NEC Corporation |
Description: MOSFET N-CH 60V 82A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V Power Dissipation (Max): 1.8W (Ta), 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-262 Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V |
на замовлення 4600 шт: термін постачання 21-31 дні (днів) |
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RD10E-NEC | NEC Corporation | Description: DIODE ZENER 9.8V 0.4W 6.5% |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RD12ES(2)-T1-AZ | NEC Corporation | Description: DIODE ZENER |
товар відсутній |
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RD12JS-T1-AZ | NEC Corporation |
Description: DIODE ZENER Packaging: Bulk |
на замовлення 184500 шт: термін постачання 21-31 дні (днів) |
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RD16ES-T1 | NEC Corporation |
Description: DIODE ZENER Packaging: Bulk Part Status: Active |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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RD16JS | NEC Corporation |
Description: DIODE ZENER 16V Packaging: Bulk Part Status: Active |
на замовлення 30810 шт: термін постачання 21-31 дні (днів) |
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RD18ES-T1-AZ | NEC Corporation |
Description: DIODE ZENER Packaging: Bulk |
на замовлення 816000 шт: термін постачання 21-31 дні (днів) |
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RD2.4E-T1-AZ | NEC Corporation |
Description: DIODE ZENER Tolerance: ±3.91% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 2.43 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 120 µA @ 1 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RD2.7ES | NEC Corporation | Description: DIODE ZENER 2.7V |
товар відсутній |
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RD3.0ES | NEC Corporation | Description: DIODE ZENER 3V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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RD3.0F-AZ | NEC Corporation | Description: DIODE ZENER |
товар відсутній |
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RD36E-T2-AZ | NEC Corporation |
Description: DIODE ZENER Packaging: Bulk |
на замовлення 1615000 шт: термін постачання 21-31 дні (днів) |
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RD39E | NEC Corporation |
Description: RD39 - 500MW ZENER DIODE, DO-35 Packaging: Bulk |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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RD4.3F | NEC Corporation |
Description: ZENER DIODE, 4.3V, 1W Packaging: Bulk Part Status: Active |
на замовлення 7600 шт: термін постачання 21-31 дні (днів) |
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RD5.6E-T1-AZ | NEC Corporation | Description: DIODE ZENER |
на замовлення 1823997 шт: термін постачання 21-31 дні (днів) |
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RD6.2E | NEC Corporation | Description: DIODE ZENER |
на замовлення 90756 шт: термін постачання 21-31 дні (днів) |
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RD7.5E-T1-AZ | NEC Corporation |
Description: DIODE ZENER Tolerance: ±2.2% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Voltage - Zener (Nom) (Vz): 7.04 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
на замовлення 2722000 шт: термін постачання 21-31 дні (днів) |
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UPC1093J-T-A | NEC Corporation |
Description: IC REG LINEAR ADJ SHUNT REG Packaging: Bulk Part Status: Active |
на замовлення 91005 шт: термін постачання 21-31 дні (днів) |
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UPC2905BHB-AY | NEC Corporation |
Description: FIXED POSITIVE LDO REGULATOR Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 4 mA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: MP-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 57dB (120Hz) Voltage Dropout (Max): 0.7V @ 1A Protection Features: Over Current, Over Temperature |
на замовлення 1728 шт: термін постачання 21-31 дні (днів) |
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UPC2906HF-AZ | NEC Corporation |
Description: FIXED POSITIVE LDO REGULATOR Packaging: Bulk Package / Case: TO-220-3 Full Pack, Isolated Tab Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 4 mA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: MP-45G Voltage - Output (Min/Fixed): 6V Part Status: Active PSRR: 60dB (120Hz) Voltage Dropout (Max): 1V @ 1A Protection Features: Over Current, Over Temperature Current - Supply (Max): 60 mA |
на замовлення 1536 шт: термін постачання 21-31 дні (днів) |
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UPD5742T6J-E4-A | NEC Corporation |
Description: IC OPAMP GP 1 CIRCUIT 3MINIMOLD Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Supplier Device Package: 3-MINIMOLD |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
|
2SA954-A |
Виробник: NEC Corporation
Description: TRANS PNP 80V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
Description: TRANS PNP 80V 0.3A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
на замовлення 109932 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1159+ | 18.64 грн |
2SC1841-A |
Виробник: NEC Corporation
Description: 0.05A, 120V, NPN, TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: 0.05A, 120V, NPN, TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
на замовлення 73522 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2319+ | 9.06 грн |
2SC3731-T-A |
на замовлення 42500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2959+ | 6.97 грн |
2SC945A-T-A |
на замовлення 665000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
260+ | 79.59 грн |
2SJ606-ZK-E1-AY |
Виробник: NEC Corporation
Description: P-CHANNEL SWITCHING POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 83A
Rds On (Max) @ Id, Vgs: 15mOhm @ 42A, 10V
Power Dissipation (Max): 120W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Description: P-CHANNEL SWITCHING POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 83A
Rds On (Max) @ Id, Vgs: 15mOhm @ 42A, 10V
Power Dissipation (Max): 120W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220SMD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
98+ | 220 грн |
2SK1482-T-AZ |
Виробник: NEC Corporation
Description: SMALL SIGNAL FET
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 750W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: SMALL SIGNAL FET
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 750W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 2162 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
738+ | 28.38 грн |
2SK3058-Z-E1-AZ |
Виробник: NEC Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-263, TO-220SMD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-263, TO-220SMD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
156+ | 137.12 грн |
2SK3634-Z-AZ |
Виробник: NEC Corporation
Description: 6A, 200V, N-CHANNEL MOSFET
Packaging: Bulk
Technology: MOSFET (Metal Oxide)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Description: 6A, 200V, N-CHANNEL MOSFET
Packaging: Bulk
Technology: MOSFET (Metal Oxide)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
на замовлення 8307 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
332+ | 63.45 грн |
2SK4028-T1-A |
Виробник: NEC Corporation
Description: N-CHANNEL SMALL SIGNAL MOSFET
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 2V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: 3pXSOF03
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 90 µA @ 2 V
Power - Max: 100 W
Description: N-CHANNEL SMALL SIGNAL MOSFET
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 2V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: 3pXSOF03
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 90 µA @ 2 V
Power - Max: 100 W
товар відсутній
2SK4070-ZK-E2-AY |
Виробник: NEC Corporation
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
541+ | 38.07 грн |
2SK4076-ZK-E1-AY |
Виробник: NEC Corporation
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Description: N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 17.5A, 10V
Power Dissipation (Max): 1W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
492+ | 43.56 грн |
AN1L3N |
Виробник: NEC Corporation
Description: TRANS PREBIAS PNP 50V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 56894 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1159+ | 19.1 грн |
FS70UMJ-06F |
Виробник: NEC Corporation
Description: 70A, 60V, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 10 V
Description: 70A, 60V, N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 10 V
на замовлення 288 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
91+ | 230.47 грн |
HRC0103ATRF-E |
на замовлення 76142 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2704+ | 7.67 грн |
HZM6.2NB2TR-E |
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1623+ | 12.78 грн |
NP32N055HLE-AZ |
Виробник: NEC Corporation
Description: 32A, 55V, 0.033OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (MP-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: 32A, 55V, 0.033OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Power Dissipation (Max): 1.2W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (MP-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
339+ | 62.05 грн |
NP32N055SHE-E1-AZ |
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
339+ | 62.05 грн |
NP80N03MDE-S18-AY |
Виробник: NEC Corporation
Description: 80A, 30V, 0.011OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MP-25K
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Description: 80A, 30V, 0.011OHM, N-CHANNEL ,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MP-25K
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
на замовлення 700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
151+ | 139.45 грн |
NP80N04NDG-S18-AY |
Виробник: NEC Corporation
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
151+ | 138.42 грн |
NP80N04NLG-S18-AY |
Виробник: NEC Corporation
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
151+ | 138.42 грн |
NP80N055MDG-S18-AY |
Виробник: NEC Corporation
Description: MOSFET N-CH 55V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 55V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 6350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
161+ | 135.91 грн |
NP82N04NDG-S18-AY |
Виробник: NEC Corporation
Description: MOSFET N-CH 40V 82A 3LDPAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-LDPAK
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET N-CH 40V 82A 3LDPAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-LDPAK
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
128+ | 182.42 грн |
NP82N04NLG-S18-AY |
Виробник: NEC Corporation
Description: MOSFET N-CH 40V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 25 V
Description: MOSFET N-CH 40V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 25 V
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
128+ | 182.42 грн |
NP82N055MUG-S18-AY |
Виробник: NEC Corporation
Description: MOSFET N-CH 55V 82A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Description: MOSFET N-CH 55V 82A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
141+ | 154.9 грн |
NP82N055NUG-S18-AY |
Виробник: NEC Corporation
Description: MOSFET N-CH 55V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
Description: MOSFET N-CH 55V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
141+ | 154.9 грн |
NP82N06NLG-S18-AY |
Виробник: NEC Corporation
Description: MOSFET N-CH 60V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Description: MOSFET N-CH 60V 82A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 41A, 10V
Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
на замовлення 4600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
135+ | 159.97 грн |
RD10E-NEC |
Виробник: NEC Corporation
Description: DIODE ZENER 9.8V 0.4W 6.5%
Description: DIODE ZENER 9.8V 0.4W 6.5%
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.24 грн |
RD12JS-T1-AZ |
на замовлення 184500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5413+ | 4.3 грн |
RD16ES-T1 |
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8103+ | 2.86 грн |
RD16JS |
на замовлення 30810 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5413+ | 4.28 грн |
RD18ES-T1-AZ |
на замовлення 816000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5413+ | 4.26 грн |
RD2.4E-T1-AZ |
Виробник: NEC Corporation
Description: DIODE ZENER
Tolerance: ±3.91%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.43 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
Description: DIODE ZENER
Tolerance: ±3.91%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.43 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 120 µA @ 1 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 10.75 грн |
RD3.0ES |
Виробник: NEC Corporation
Description: DIODE ZENER 3V
Description: DIODE ZENER 3V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2197+ | 10.14 грн |
RD36E-T2-AZ |
на замовлення 1615000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5413+ | 4.18 грн |
RD39E |
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2029+ | 10.65 грн |
RD4.3F |
на замовлення 7600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1249+ | 17.2 грн |
RD5.6E-T1-AZ |
Виробник: NEC Corporation
Description: DIODE ZENER
Description: DIODE ZENER
на замовлення 1823997 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5864+ | 3.62 грн |
RD6.2E |
Виробник: NEC Corporation
Description: DIODE ZENER
Description: DIODE ZENER
на замовлення 90756 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5864+ | 3.62 грн |
RD7.5E-T1-AZ |
Виробник: NEC Corporation
Description: DIODE ZENER
Tolerance: ±2.2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.04 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER
Tolerance: ±2.2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.04 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
на замовлення 2722000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2029+ | 10.46 грн |
UPC1093J-T-A |
на замовлення 91005 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
650+ | 32.97 грн |
UPC2905BHB-AY |
Виробник: NEC Corporation
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: MP-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 0.7V @ 1A
Protection Features: Over Current, Over Temperature
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: MP-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 0.7V @ 1A
Protection Features: Over Current, Over Temperature
на замовлення 1728 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
176+ | 132.74 грн |
UPC2906HF-AZ |
Виробник: NEC Corporation
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: MP-45G
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1V @ 1A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 60 mA
Description: FIXED POSITIVE LDO REGULATOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Isolated Tab
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: MP-45G
Voltage - Output (Min/Fixed): 6V
Part Status: Active
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1V @ 1A
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 60 mA
на замовлення 1536 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
204+ | 108.97 грн |
UPD5742T6J-E4-A |
Виробник: NEC Corporation
Description: IC OPAMP GP 1 CIRCUIT 3MINIMOLD
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: 3-MINIMOLD
Description: IC OPAMP GP 1 CIRCUIT 3MINIMOLD
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: 3-MINIMOLD
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
773+ | 27.85 грн |