Продукція > S4D
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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S4D | Taiwan Semiconductor | Rectifiers 4A, 200V, Standard Recovery Rectifier | на замовлення 348 шт: термін постачання 21-30 дні (днів) |
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S4D M6G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 4A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V | товар відсутній | |||||||||||||||
S4D R6 | Taiwan Semiconductor | Rectifiers 4A, 200V, GLASS PASSIVATED SMD RECTIFIER | товар відсутній | |||||||||||||||
S4D R6G | Taiwan Semiconductor | Rectifiers 4A, 200V, GLASS PASSIVATED SMD RECTIFIER | товар відсутній | |||||||||||||||
S4D R7 | Taiwan Semiconductor | Rectifiers 4A 200V Standard Rec overy Rectifier | на замовлення 1056 шт: термін постачання 21-30 дні (днів) |
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S4D R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 4A DO214AB | на замовлення 3343 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
S4D R7G | Taiwan Semiconductor | Rectifiers 4A, 200V, Standard Recovery Rectifier | на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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S4D R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 4A DO214AB | на замовлення 2550 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
S4D V6G | TAIWAN SEMICONDUCTOR | Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 4A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 60pF Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape | на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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S4D V6G | TAIWAN SEMICONDUCTOR | Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 4A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 4A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 60pF Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape кількість в упаковці: 1 шт | на замовлення 15 шт: термін постачання 14-21 дні (днів) |
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S4D V7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 200V 4A DO214AB | на замовлення 830 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
S4D015 | MAGLITE | Category: Torches Description: Torch: standard; Colour: black Body material: aluminium Type of torch: standard Light source features: luminous flux adjustment; self-cleaning switching contacts; spare bulb in rear cap; switch button in housing recess Body colour: black Power supply: battery LR20 D 1,5V x4 | на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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S4D015 | MAGLITE | Category: Torches Description: Torch: standard; Colour: black Body material: aluminium Type of torch: standard Light source features: luminous flux adjustment; self-cleaning switching contacts; spare bulb in rear cap; switch button in housing recess Body colour: black Power supply: battery LR20 D 1,5V x4 кількість в упаковці: 1 шт | на замовлення 3 шт: термін постачання 14-21 дні (днів) |
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S4D02120A | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 2A TO220AC | на замовлення 1999 шт: термін постачання 21-31 дні (днів) |
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S4D02120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 44A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D02120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 44A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D02120E | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 116pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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S4D02120E | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 2A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 116pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | на замовлення 7146 шт: термін постачання 21-31 дні (днів) |
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S4D02120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 44A Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D02120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 44A Technology: SiC Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D04120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 4A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D04120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 4A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 4A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D04120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D04120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 4A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D05120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D05120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D05120A | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 5A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V | на замовлення 853 шт: термін постачання 21-31 дні (днів) |
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S4D05120E | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V | на замовлення 2627 шт: термін постачання 21-31 дні (днів) |
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S4D05120E | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D05120E1 | SMC Diode Solutions | Description: 1200V, 5A, DPAK, SIC SCHOTTKY DI Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D05120E1 | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 5A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 46A Leakage current: 0.2mA Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D05120E1 | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 5A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 46A Leakage current: 0.2mA Technology: SiC Kind of package: reel; tape кількість в упаковці: 2500 шт | товар відсутній | |||||||||||||||
S4D05120E1 | SMC Diode Solutions | Description: 1200V, 5A, DPAK, SIC SCHOTTKY DI Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D05120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D05120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D05120G | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D05120G | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V | на замовлення 752 шт: термін постачання 21-31 дні (днів) |
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S4D05120GTR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D05120GTR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D08120A | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 560pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V | на замовлення 274 шт: термін постачання 21-31 дні (днів) |
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S4D08120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 64A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D08120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 64A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D08120E | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 560pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V | на замовлення 1367 шт: термін постачання 21-31 дні (днів) |
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S4D08120E | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 560pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D08120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 64A Technology: SiC Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D08120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 8A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 8A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 64A Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D10120A | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | на замовлення 260 шт: термін постачання 21-31 дні (днів) |
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S4D10120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 620A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D10120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 620A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D10120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D10120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 10A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 46A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D10120D | SMC Diode Solutions | Description: DIODE SCHOTTKY SILICON CARBIDE S | на замовлення 146 шт: термін постачання 21-31 дні (днів) |
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S4D10120E | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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S4D10120E | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | на замовлення 1286 шт: термін постачання 21-31 дні (днів) |
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S4D10120ETR | SMC Diode Solutions | Description: DIODE SCHOTTKY SILICON CARBIDE S | на замовлення 500 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
S4D10120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 620A Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D10120ETR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: DPAK Max. forward voltage: 3V Max. forward impulse current: 620A Technology: SiC Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D10120F | SMC Diode Solutions | Description: DIODE SIC 1.2KV 10A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D10120F | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; ITO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 3V Max. forward impulse current: 620A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D10120F | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; ITO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 3V Max. forward impulse current: 620A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D10120G0 | SMC Diode Solutions | Description: DIODE SCHOTTKY SILICON CARBIDE S Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D10120G0 | SMC Diode Solutions | Description: DIODE SCHOTTKY SILICON CARBIDE S Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D10120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 620A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D10120H | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 10A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | на замовлення 532 шт: термін постачання 21-31 дні (днів) |
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S4D10120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 620A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D10120L1 | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 10A 5DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D10120L1 | SMC Diode Solutions | Description: DIODE SIL CARBIDE 1.2KV 10A 5DFN Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: 5-DFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D10120L1TR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; DFN8x8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 27A Semiconductor structure: single diode Case: DFN8x8 Max. forward voltage: 3V Max. forward impulse current: 105A Leakage current: 30µA Power dissipation: 107.1W Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D10120L1TR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; DFN8x8; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 27A Semiconductor structure: single diode Case: DFN8x8 Max. forward voltage: 3V Max. forward impulse current: 105A Leakage current: 30µA Power dissipation: 107.1W Technology: SiC Kind of package: reel; tape кількість в упаковці: 3000 шт | товар відсутній | |||||||||||||||
S4D15120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 100A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D15120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 100A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D15120A | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1200pF @ 0V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 35 µA @ 1200 V | на замовлення 278 шт: термін постачання 21-31 дні (днів) |
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S4D15120D | SMC Diode Solutions | Description: DIODE SCHOTTKY SILICON CARBIDE S | на замовлення 299 шт: термін постачання 21-31 дні (днів) |
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S4D15120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 7.5A x2 Max. load current: 15A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 66A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D15120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 7.5Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 7.5A x2 Max. load current: 15A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 66A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D15120G | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 15A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 15A Max. load current: 46A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 130A Leakage current: 40µA Power dissipation: 178.6W Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D15120G | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 15A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 15A Max. load current: 46A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 130A Leakage current: 40µA Power dissipation: 178.6W Technology: SiC Kind of package: reel; tape кількість в упаковці: 800 шт | товар відсутній | |||||||||||||||
S4D15120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 100A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D15120H | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 15A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1200pF @ 0V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 35 µA @ 1200 V | на замовлення 215 шт: термін постачання 21-31 дні (днів) |
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S4D15120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 100A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D200-AH14-01 | ebm-papst | AC Fans AC Axial Fan, IP44 Rated | товар відсутній | |||||||||||||||
S4D20120A | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 721pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V | на замовлення 1044 шт: термін постачання 21-31 дні (днів) |
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S4D20120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 162A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D20120A | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 3V Max. forward impulse current: 162A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D20120D | SMC Diode Solutions | Description: DIODE ARR SIC 1200V 10A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | на замовлення 711 шт: термін постачання 21-31 дні (днів) |
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S4D20120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 105A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D20120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 105A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D20120G | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 721pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D20120G | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 721pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D20120GTR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 162A Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D20120GTR | SMC Diode Solutions | Description: DIODE SCHOTTKY SILICON CARBIDE S | на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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S4D20120GTR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 162A Technology: SiC Kind of package: reel; tape кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D20120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 162A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D20120H | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 20A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 721pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V | на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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S4D20120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 162A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D26CSF372PJM | на замовлення 1958 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D26CSF49PJM | TI | на замовлення 197 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||
S4D26SF129PJMR | на замовлення 400 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D26SF144PJM | на замовлення 259 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D26SF191PJM | на замовлення 90 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D26SF214PJM | на замовлення 319 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D26SF321PJM | на замовлення 169 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D26SF323PJM | на замовлення 158 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D26SF327PJM | на замовлення 205 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D26SF374PJM | на замовлення 63 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D27F56PJM | на замовлення 1430 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D27RF231PJMR | на замовлення 400 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D300-AR34-17 | ebm-papst Inc. | Description: FAN AXIAL | товар відсутній | |||||||||||||||
S4D300-AR34-17 | EBM-PAPST | S4D300AR3417-EBM Unclassified | товар відсутній | |||||||||||||||
S4D30120D | SMC Diode Solutions | Description: DIODE ARR SIC 1200V 15A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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S4D30120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 100A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D30120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 100A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D30120F | SMC Diode Solutions | Description: 1200V, 30A, ITO-220AC, SIC SCHOT Packaging: Tube | на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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S4D30120G | SMC Diode Solutions | Description: 1200V, 30A, D2PAK, SIC SCHOTTKY Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2581pF @ 1V, 1MHz Current - Average Rectified (Io): 94A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 20 µA | на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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S4D30120G | SMC Diode Solutions | Description: 1200V, 30A, D2PAK, SIC SCHOTTKY Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2581pF @ 1V, 1MHz Current - Average Rectified (Io): 94A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 20 µA | товар відсутній | |||||||||||||||
S4D30120G0 | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Max. load current: 94A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 300A Leakage current: 20µA Power dissipation: 441W Technology: SiC Kind of package: reel; tape кількість в упаковці: 800 шт | товар відсутній | |||||||||||||||
S4D30120G0 | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Max. load current: 94A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 300A Leakage current: 20µA Power dissipation: 441W Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D30120GTR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Max. load current: 94A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 300A Leakage current: 20µA Power dissipation: 441W Technology: SiC Kind of package: reel; tape | товар відсутній | |||||||||||||||
S4D30120GTR | SMC DIODE SOLUTIONS | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 30A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Max. load current: 94A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 3V Max. forward impulse current: 300A Leakage current: 20µA Power dissipation: 441W Technology: SiC Kind of package: reel; tape кількість в упаковці: 800 шт | товар відсутній | |||||||||||||||
S4D30120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 246A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D30120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 246A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D30120H | SMC Diode Solutions | Description: DIODE SIL CARB 1.2KV 94A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2581pF @ 0V, 1MHz Current - Average Rectified (Io): 94A Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V | товар відсутній | |||||||||||||||
S4D30120H2 | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247AC; Ufmax: 3V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247AC Max. forward voltage: 3V Max. load current: 88A Max. forward impulse current: 233A Leakage current: 25µA Power dissipation: 441W Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | на замовлення 25 шт: термін постачання 14-21 дні (днів) |
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S4D30120H2 | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247AC; Ufmax: 3V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: TO247AC Max. forward voltage: 3V Max. load current: 88A Max. forward impulse current: 233A Leakage current: 25µA Power dissipation: 441W Technology: SiC Kind of package: tube | на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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S4D30120H2 | SMC Diode Solutions | Description: 1200V, 30A, TO-247AC, SIC SCHOTT Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2581pF @ 0V, 1MHz Current - Average Rectified (Io): 94A Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 1.2 kV | на замовлення 222 шт: термін постачання 21-31 дні (днів) |
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S4D350-AN22-67 | ebm-papst | AC Fans AC Axial Fan, 350x350x85mm, 400VAC, 812CFM, 95W, 930RPM, Ball Bearing, IP44 | товар відсутній | |||||||||||||||
S4D350-BA06-08 | ebm-papst Inc. | Description: FAN AXIAL Power (Watts): 190W Features: Dual Voltage Packaging: Bulk Voltage - Rated: 230/400VAC Size / Dimension: Round - 422mm Dia Bearing Type: Ball RPM: 1620 RPM Air Flow: 1186.8 CFM (33.23m³/min) Width: 167.0mm Operating Temperature: -13 ~ 122°F (-25 ~ 50°C) Termination: 7 Wire Leads with Splice Terminals Approval Agency: CCC Ingress Protection: IP44 Fan Type: Tubeaxial, 3 Phase Static Pressure: 0.602 in H2O (150.0 Pa) Part Status: Active | на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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S4D350-BA06-08 | ebm-papst | AC Fans Axial Fan, 422x167mm Round, 230VAC/400VAC, 1186CFM, 190W, 1620RPM, 150Pa, IP44 | товар відсутній | |||||||||||||||
S4D37RF187PJM | на замовлення 143 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D400-AP12-77 | ebm-papst | AC Fans AC Axial Fan | товар відсутній | |||||||||||||||
S4D40120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 162A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D40120D | SMC Diode Solutions | Description: DIODE SCHOTTKY SILICON CARBIDE S | на замовлення 290 шт: термін постачання 21-31 дні (днів) |
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S4D40120D | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 3V Max. forward impulse current: 162A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D40120H | SMC Diode Solutions | Description: DIODE SIC 1.2KV 128A TO247AC Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3.227nF @ 0V, 1MHz Current - Average Rectified (Io): 128A Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | на замовлення 551 шт: термін постачання 21-31 дні (днів) |
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S4D40120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 41A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 41A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 245A Technology: SiC Kind of package: tube | товар відсутній | |||||||||||||||
S4D40120H | SMC DIODE SOLUTIONS | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 41A; TO247-2,TO247AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 41A Semiconductor structure: single diode Case: TO247-2; TO247AC Max. forward voltage: 3V Max. forward impulse current: 245A Technology: SiC Kind of package: tube кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D41M | на замовлення 10200 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D450-AO14-01 | EBM-PAPST | Category: AC 400V Fans Description: Fan: AC; axial; 400VAC; ball bearing; 1360rpm; IP54; Kind: 3-phase IP rating: IP54 Enclosure material: steel Operating temperature: -40...65°C Frequency: 50Hz Type of fan: AC Fan motor: M4D094-HA Impeller material: plastic Insulation class: F Kind of Bearing: ball bearing Rotational rate/speed: 1360rpm Power consumption: 480W Protection class: I Kind of motor: 3-phase Kind of fan: axial Current rating: 0.98A Supply voltage: 400V AC Leads: connectors 2,8x0,5mm | товар відсутній | |||||||||||||||
S4D450-AO14-01 | EBM-PAPST | Category: AC 400V Fans Description: Fan: AC; axial; 400VAC; ball bearing; 1360rpm; IP54; Kind: 3-phase IP rating: IP54 Enclosure material: steel Operating temperature: -40...65°C Frequency: 50Hz Type of fan: AC Fan motor: M4D094-HA Impeller material: plastic Insulation class: F Kind of Bearing: ball bearing Rotational rate/speed: 1360rpm Power consumption: 480W Protection class: I Kind of motor: 3-phase Kind of fan: axial Current rating: 0.98A Supply voltage: 400V AC Leads: connectors 2,8x0,5mm кількість в упаковці: 1 шт | товар відсутній | |||||||||||||||
S4D450-AP03-10 | ebm-papst | AC Fans AC Axial Fan, 450mm Round, 3240CFM | товар відсутній | |||||||||||||||
S4D450-AP03-10 | EBM-PAPST | Description: EBM-PAPST - S4D450-AP03-10 - AXIAL FAN, 450MM, 460VAC, 3266.6CFM tariffCode: 84145925 Stromanschluss: Terminals rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Art des Lagers: Ball Bearing Nennleistung: 380W IP-Schutzart: IP44 usEccn: EAR99 Luftstrom - m3/min: 92.5m³/min Nennstrom: 600mA AC-Nennspannung: 460V Außentiefe: 174.5mm Geräuschentwicklung: - euEccn: NLR Luftstrom - CFM: 3266.6cu.ft/min Lüfterrahmen: Circular Produktpalette: S4D450 Series productTraceability: No Rahmengröße: 450mm Nenndrehzahl: 1460rpm directShipCharge: 25 SVHC: Lead | на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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S4D450-AP03-10 | ebm-papst Inc. | Description: FAN AXIAL | на замовлення 5 шт: термін постачання 21-31 дні (днів) | |||||||||||||||
S4D450-AU01-01 | ebm-papst | AC Fans AC Axial Fan | товар відсутній | |||||||||||||||
S4D450-HA14-01 | ebm-papst | AC Fans Axial, 450mm, 400V, 585/660W, 1.1/1.16A, 1330/1540RPM, w/Guard for Full Nozzle | товар відсутній | |||||||||||||||
S4D47F311PJM | на замовлення 4469 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4D80120S2 | SMC DIODE SOLUTIONS | Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227B; screw Case: SOT227B Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 82A Load current: 41A x2 Semiconductor structure: double independent Max. forward impulse current: 245A кількість в упаковці: 1 шт | на замовлення 19 шт: термін постачання 14-21 дні (днів) |
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S4D80120S2 | SMC Diode Solutions | Description: 1200V, 80A, SOT-227, SIC SCHOTTK Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 128A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V | на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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S4D80120S2 | SMC DIODE SOLUTIONS | Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 41Ax2; SOT227B; screw Case: SOT227B Kind of package: bulk Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 82A Load current: 41A x2 Semiconductor structure: double independent Max. forward impulse current: 245A | на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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S4DB | на замовлення 69 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4DC12V | Panasonic Industrial Devices | Panasonic | товар відсутній | |||||||||||||||
S4DF006X1 | на замовлення 48 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
S4DNF30L | ST | на замовлення 2259 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||
S4DNF60L | ST | SOP-8 | на замовлення 8700 шт: термін постачання 14-28 дні (днів) | |||||||||||||||
S4DNF60L | ST | 01+ SOP | на замовлення 2188 шт: термін постачання 14-28 дні (днів) | |||||||||||||||
S4DPF30L | OO | на замовлення 3300 шт: термін постачання 14-28 дні (днів) | ||||||||||||||||
S4DSP2 | на замовлення 23 шт: термін постачання 14-28 дні (днів) |