Продукція > PJL
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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PJL-48V200WBAA | Delta Electronics | Switching Power Supplies 200W / 48V - Open Frame PFC | на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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PJL-48V400WBAA | Delta Electronics | Switching Power Supplies 400W / 48V - Open Frame PFC | на замовлення 68 шт: термін постачання 493-502 дні (днів) |
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PJL-PO-1 | Panduit Corp | Description: LABEL PANJACK DM WHITE | товар відсутній | |||||||||||||||
PJL-PO-1R | Panduit Corp | Description: LABEL PANJACK DM RED | товар відсутній | |||||||||||||||
PJL9401_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJL9402_R2_00001 | Panjit | MOSFET /L9402/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS42/PJL9402-ASD1/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9404_R2_00001 | Panjit | MOSFET /L9404/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS21/PJL9404-AS30/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9407_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M | товар відсутній | |||||||||||||||
PJL9407_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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PJL9407_R2_00001 | PanJit Semiconductor | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8 Mounting: SMD Pulsed drain current: -20A Power dissipation: 2.1W Gate charge: 4.8nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 80mΩ | на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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PJL9407_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M | на замовлення 2475 шт: термін постачання 21-31 дні (днів) |
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PJL9407_R2_00001 | PanJit Semiconductor | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8 Mounting: SMD Pulsed drain current: -20A Power dissipation: 2.1W Gate charge: 4.8nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 80mΩ кількість в упаковці: 5 шт | на замовлення 2500 шт: термін постачання 14-21 дні (днів) |
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PJL9408_R2_00001 | Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET | на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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PJL9410_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M | товар відсутній | |||||||||||||||
PJL9410_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M | товар відсутній | |||||||||||||||
PJL9411_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M | на замовлення 2497 шт: термін постачання 21-31 дні (днів) |
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PJL9411_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M | товар відсутній | |||||||||||||||
PJL9411_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | на замовлення 2463 шт: термін постачання 21-30 дні (днів) |
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PJL9412_R2_00001 | Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJL9413_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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PJL9414_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M | на замовлення 2482 шт: термін постачання 21-31 дні (днів) |
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PJL9414_R2_00001 | Panjit | MOSFET /L9414/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS26/PJL9414-AS34/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9414_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M | товар відсутній | |||||||||||||||
PJL9415_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3168 pF @ 15 V | товар відсутній | |||||||||||||||
PJL9415_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3168 pF @ 15 V | на замовлення 2015 шт: термін постачання 21-31 дні (днів) |
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PJL9417_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V | товар відсутній | |||||||||||||||
PJL9417_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V | товар відсутній | |||||||||||||||
PJL9426_R2_00001 | Panjit | MOSFET 40V N-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJL9430A_R2_00001 | Panjit | MOSFET /L9430A/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-60ICMN//PJ/SOP8-AS39/PJL9430A-ASI0/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9433A_R2_00001 | Panjit | MOSFET 60V P-Channel Enhancement Mode MOSFET | на замовлення 3246 шт: термін постачання 21-30 дні (днів) |
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PJL9433A_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJL9433A_R2_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJL9434A-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJL9434A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V | товар відсутній | |||||||||||||||
PJL9434A_R2_00001 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJL9434A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2256 pF @ 25 V | товар відсутній | |||||||||||||||
PJL9436A1_R2_00001 | Panjit | MOSFET /L9436A1/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-60ICMN//PJ/SOP8-AS32/PJL9436A1-AS87/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9436A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V | на замовлення 2480 шт: термін постачання 21-31 дні (днів) |
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PJL9436A_R2_00001 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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PJL9436A_R2_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V | товар відсутній | |||||||||||||||
PJL9438A_R2_00001 | Panjit | MOSFET /L9438A/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-60ICMN//PJ/SOP8-AS58/PJL9438A-ASF5/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9450A-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJL9452A-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJL9452A_R2_00001 | Panjit | MOSFET 100V N-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJL9452A_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 3.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V | товар відсутній | |||||||||||||||
PJL9454A-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJL9458AL-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJL9458AL_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V | товар відсутній | |||||||||||||||
PJL9458AL_R2_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V | товар відсутній | |||||||||||||||
PJL9458AL_R2_00001 | Panjit | MOSFET 100V N-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJL9480_R2_00001 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V | на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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PJL9480_R2_00001 | Panjit | MOSFET 150V N-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJL9480_R2_00001 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V | товар відсутній | |||||||||||||||
PJL9602_R2_00001 | Panjit | MOSFET /L9602/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICNP//PJ/SOP8-AS82/PJL9602-ASW9/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9602_R2_00001 | Panjit International Inc. | Description: 30V COMPLEMENTARY ENHANCEMENT MO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | на замовлення 2363 шт: термін постачання 21-31 дні (днів) |
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PJL9602_R2_00001 | Panjit International Inc. | Description: 30V COMPLEMENTARY ENHANCEMENT MO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 343pF @ 15V, 870pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | товар відсутній | |||||||||||||||
PJL9606_R2_00001 | Panjit International Inc. | Description: 30V COMPLEMENTARY ENHANCEMENT MO | товар відсутній | |||||||||||||||
PJL9606_R2_00001 | Panjit International Inc. | Description: 30V COMPLEMENTARY ENHANCEMENT MO | товар відсутній | |||||||||||||||
PJL9801_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M | товар відсутній | |||||||||||||||
PJL9801_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET | на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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PJL9801_R2_00001 | Panjit International Inc. | Description: 30V P-CHANNEL ENHANCEMENT MODE M | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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PJL9802_R2_00001 | Panjit | MOSFET /L9802/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS49/PJL9802-ASD2/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9808_R2_00001 | Panjit | MOSFET /L9808/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ/SOP8-AS25/PJL9808-AS33/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9809-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJL9809_R2_00001 | Panjit | MOSFET 30V Dual P-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJL9809_R2_00001 | Panjit International Inc. | Description: 30V DUAL P-CHANNEL ENHANCEMENT M | товар відсутній | |||||||||||||||
PJL9809_R2_00001 | Panjit International Inc. | Description: 30V DUAL P-CHANNEL ENHANCEMENT M | товар відсутній | |||||||||||||||
PJL9811_R2_00001 | Panjit International Inc. | Description: MOSFET 2P-CH 30V 7.8A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1169pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | на замовлення 6938 шт: термін постачання 21-31 дні (днів) |
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PJL9811_R2_00001 | Panjit | MOSFET /L9811/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMP//PJ/SOP8-AS34/PJL9811-AS40/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9811_R2_00001 | Panjit International Inc. | Description: MOSFET 2P-CH 30V 7.8A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1169pF @ 15V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PJL9812_R2_00001 | Panjit | MOSFET /L9812/TR/13"/HF/2.5K/SOP-8/MOS/SOP/NFET-30ICMN//PJ//SOP8-AS18/SOP8-AS01 | товар відсутній | |||||||||||||||
PJL9812_R2_00001 | Panjit International Inc. | Description: 30V DUAL N-CHANNEL ENHANCEMENT M | товар відсутній | |||||||||||||||
PJL9812_R2_00001 | Panjit International Inc. | Description: 30V DUAL N-CHANNEL ENHANCEMENT M | товар відсутній | |||||||||||||||
PJL9812_R2_00201 | Panjit International Inc. | Description: MOSFET 2N-CH 30V 6A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PJL9812_R2_00201 | Panjit International Inc. | Description: MOSFET 2N-CH 30V 6A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | на замовлення 4963 шт: термін постачання 21-31 дні (днів) |
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PJL9812_R2_00201 | Panjit | MOSFET 30V Dual N-Channel Enhancement Mode MOSFET | на замовлення 2483 шт: термін постачання 21-30 дні (днів) |
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PJL9850_R2_00001 | Panjit International Inc. | Description: 40V DUAL N-CHANNEL ENHANCEMENT M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PJL9850_R2_00001 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.4A Pulsed drain current: 20A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced | на замовлення 2292 шт: термін постачання 21-30 дні (днів) |
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PJL9850_R2_00001 | Panjit | MOSFET 40V Dual N-Channel Enhancement Mode MOSFET | на замовлення 2088 шт: термін постачання 21-30 дні (днів) |
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PJL9850_R2_00001 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.4A Pulsed drain current: 20A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт | на замовлення 2292 шт: термін постачання 14-21 дні (днів) |
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PJL9850_R2_00001 | Panjit International Inc. | Description: 40V DUAL N-CHANNEL ENHANCEMENT M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | на замовлення 3102 шт: термін постачання 21-31 дні (днів) |
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PJL9854_R2_00001 | Panjit International Inc. | Description: 40V DUAL N-CHANNEL ENHANCEMENT M Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | на замовлення 3649 шт: термін постачання 21-31 дні (днів) |
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PJL9854_R2_00001 | Panjit International Inc. | Description: 40V DUAL N-CHANNEL ENHANCEMENT M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PJL9854_R2_00001 | Panjit | MOSFET 40V Dual N-Channel Enhancement Mode MOSFET | на замовлення 2500 шт: термін постачання 566-575 дні (днів) |
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PJLC1V5 | на замовлення 33000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
PJLC1V5D | на замовлення 33000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
PJLCDA05 | на замовлення 33000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
PJLCDA12 | на замовлення 33000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
PJLCVU2.8 | на замовлення 33000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
PJLKIT316 | Hammond | Snap Latch For Pj Series With Rivets And Screws | товар відсутній | |||||||||||||||
PJLKIT316 | Hammond Manufacturing | Electrical Enclosure Accessories Latch Kit/Snap Latch For PJ Series/Pack2 | товар відсутній |