Продукція > PJC
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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PJC138K-AU_R1_000A1 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJC138K-AU_R1_000A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT323 Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4.5Ω Pulsed drain current: 1.2A Type of transistor: N-MOSFET Drain current: 0.36A Drain-source voltage: 50V Power dissipation: 236mW | на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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PJC138K-AU_R1_000A1 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | на замовлення 3486 шт: термін постачання 21-31 дні (днів) |
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PJC138K-AU_R1_000A1 | Panjit | MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected | товар відсутній | |||||||||||||||
PJC138K-AU_R1_000A1 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT323 Gate charge: 1nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4.5Ω Pulsed drain current: 1.2A Type of transistor: N-MOSFET Drain current: 0.36A Drain-source voltage: 50V Power dissipation: 236mW кількість в упаковці: 5 шт | на замовлення 2970 шт: термін постачання 14-21 дні (днів) |
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PJC138K_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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PJC138K_R1_00001 | Panjit | MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected | на замовлення 140126 шт: термін постачання 21-30 дні (днів) |
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PJC138K_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | на замовлення 1780 шт: термін постачання 21-31 дні (днів) |
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PJC138K_R2_00001 | Panjit | MOSFET 8KW/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-50TAMN/NF50TA-QI01/PJ/// | товар відсутній | |||||||||||||||
PJC138L_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M | на замовлення 2606 шт: термін постачання 21-31 дні (днів) |
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PJC138L_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M | товар відсутній | |||||||||||||||
PJC138L_R1_00001 | Panjit | MOSFETs 60V P-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJC138L_R2_00001 | Panjit | MOSFET /C8L/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-60TAMN/NF60TA-QI01/PJ/// | товар відсутній | |||||||||||||||
PJC16F73-1/SP | на замовлення 26 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
PJC7002H_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V | на замовлення 575 шт: термін постачання 21-31 дні (днів) |
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PJC7002H_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V | товар відсутній | |||||||||||||||
PJC7002H_R1_00001 | Panjit | MOSFET /C2H/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-60TAMN/NF60TA-QI04/PJ/// | товар відсутній | |||||||||||||||
PJC7201 | SQUARE D BY SCHNEIDER ELECTRIC | Description: SQUARE D BY SCHNEIDER ELECTRIC - PJC7201 - ELECTRIC JOINT COMPOUND, CIRCUIT BREAKER tariffCode: 34031980 productTraceability: No Behältertyp: Tube rohsCompliant: NA Gewicht: 2oz euEccn: NLR Volumen: 59.15ml hazardous: false rohsPhthalatesCompliant: NA directShipCharge: 25 usEccn: EAR99 Produktpalette: - SVHC: No SVHC (17-Dec-2014) | на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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PJC7400_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT323 Gate charge: 4.8nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.11Ω Pulsed drain current: 7.6A Type of transistor: N-MOSFET Drain current: 1.9A Drain-source voltage: 30V Power dissipation: 0.35W | на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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PJC7400_R1_00001 | Panjit | MOSFET 30V N-Channel Enhancement Mode MOSFET | на замовлення 44684 шт: термін постачання 21-30 дні (днів) |
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PJC7400_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V | на замовлення 11583 шт: термін постачання 21-31 дні (днів) |
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PJC7400_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V | на замовлення 162000 шт: термін постачання 21-31 дні (днів) |
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PJC7400_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT323 Gate charge: 4.8nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.11Ω Pulsed drain current: 7.6A Type of transistor: N-MOSFET Drain current: 1.9A Drain-source voltage: 30V Power dissipation: 0.35W кількість в упаковці: 5 шт | на замовлення 6000 шт: термін постачання 14-21 дні (днів) |
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PJC7400_R2_00001 | Panjit | MOSFET /C00/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-30TAMN/NF30TA-QI02/PJ/// | товар відсутній | |||||||||||||||
PJC7401_R1_00001 | Panjit | MOSFET /C01/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-30TAMP/NF30TA-QI01/PJ/// | товар відсутній | |||||||||||||||
PJC7401_R1_00001 | PanJit Semiconductor | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT323 Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.18Ω Pulsed drain current: -6A Type of transistor: P-MOSFET Drain current: -1.5A Drain-source voltage: -30V Power dissipation: 0.35W кількість в упаковці: 5 шт | на замовлення 2390 шт: термін постачання 14-21 дні (днів) |
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PJC7401_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V | на замовлення 31458 шт: термін постачання 21-31 дні (днів) |
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PJC7401_R1_00001 | PanJit Semiconductor | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Case: SOT323 Gate charge: 11nC Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 0.18Ω Pulsed drain current: -6A Type of transistor: P-MOSFET Drain current: -1.5A Drain-source voltage: -30V Power dissipation: 0.35W | на замовлення 2390 шт: термін постачання 21-30 дні (днів) |
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PJC7401_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V | на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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PJC7401_R2_00001 | Panjit | MOSFET C01/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-30TAMP/NF30TA-QI01/PJ/// | товар відсутній | |||||||||||||||
PJC7403_R1_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M | товар відсутній | |||||||||||||||
PJC7403_R1_00001 | Panjit | MOSFET /C03/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI01/PJ/// | товар відсутній | |||||||||||||||
PJC7403_R1_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M | на замовлення 1525 шт: термін постачання 21-31 дні (днів) |
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PJC7403_R2_00001 | Panjit | MOSFET /C03/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI01/PJ/// | товар відсутній | |||||||||||||||
PJC7404_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 4A Mounting: SMD Case: SOT323 кількість в упаковці: 1 шт | на замовлення 6000 шт: термін постачання 14-21 дні (днів) |
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PJC7404_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 1A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 4A Mounting: SMD Case: SOT323 | на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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PJC7404_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V | на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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PJC7404_R1_00001 | Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected | на замовлення 5978 шт: термін постачання 21-30 дні (днів) |
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PJC7404_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V | на замовлення 26442 шт: термін постачання 21-31 дні (днів) |
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PJC7407_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V | на замовлення 37266 шт: термін постачання 21-31 дні (днів) |
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PJC7407_R1_00001 | Panjit | MOSFETs 20V P-Channel Enhancement Mode MOSFET | на замовлення 152356 шт: термін постачання 21-30 дні (днів) |
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PJC7407_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V | на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Drain-source voltage: -20V Drain current: -1.3A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -5.2A кількість в упаковці: 1 шт | на замовлення 8515 шт: термін постачання 14-21 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Drain-source voltage: -20V Drain current: -1.3A On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -5.2A | на замовлення 8515 шт: термін постачання 21-30 дні (днів) |
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PJC7407_R2_00001 | Panjit | MOSFET C07/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI03/PJ/// | товар відсутній | |||||||||||||||
PJC7409-R1-00001 | Panjit | MOSFET SOT-323/MOS/SOT/NFET-20TAMP | товар відсутній | |||||||||||||||
PJC7409-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJC7409_R1_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V | на замовлення 5486 шт: термін постачання 21-31 дні (днів) |
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PJC7409_R1_00001 | Panjit International Inc. | Description: 20V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJC7409_R1_00001 | Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFET | на замовлення 2750 шт: термін постачання 21-30 дні (днів) |
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PJC7409_R2_00001 | Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJC7410-R1-00001 | Panjit | MOSFET SOT-323/MOS/SOT/NFET-20TAMN | товар відсутній | |||||||||||||||
PJC7410-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJC7410_R1_00001 | Panjit | MOSFET 20V N-Channel Enhancement Mode MOSFET | на замовлення 2765 шт: термін постачання 21-30 дні (днів) |
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PJC7410_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V | на замовлення 2628 шт: термін постачання 21-31 дні (днів) |
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PJC7410_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V | товар відсутній | |||||||||||||||
PJC7410_R2_00001 | Panjit | MOSFET 20V N-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJC7412_R1_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected | товар відсутній | |||||||||||||||
PJC7412_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected | товар відсутній | |||||||||||||||
PJC7428_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V | на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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PJC7428_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 0.6A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±10V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт | товар відсутній | |||||||||||||||
PJC7428_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 0.6A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±10V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhanced | товар відсутній | |||||||||||||||
PJC7428_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V | на замовлення 19884 шт: термін постачання 21-31 дні (днів) |
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PJC7438-R1-00001 | Panjit | MOSFET SOT-323/MOS/SOT/NFET-50TAMN | товар відсутній | |||||||||||||||
PJC7438-R2-00001 | Panjit | MOSFET | товар відсутній | |||||||||||||||
PJC7438_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJC7438_R1_00001 | Panjit | MOSFET 50V P-Channel Enhancement Mode MOSFET-ESD Protected | на замовлення 2837 шт: термін постачання 21-30 дні (днів) |
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PJC7438_R1_00001 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V | на замовлення 3780 шт: термін постачання 21-31 дні (днів) |
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PJC7438_R2_00001 | Panjit | MOSFET 50V P-Channel Enhancement Mode MOSFET-ESD Protected | товар відсутній | |||||||||||||||
PJC7439-AU_R1_000A1 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 50820 шт: термін постачання 21-31 дні (днів) |
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PJC7439-AU_R1_000A1 | Panjit International Inc. | Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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PJC7439-AU_R1_000A1 | Panjit | MOSFET 60V P-Channel Enhancement Mode MOSFET | товар відсутній | |||||||||||||||
PJC7439-AU_R1_000A1 | PanJit Semiconductor | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Drain-source voltage: -60V Drain current: -250mA On-state resistance: 13Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Mounting: SMD Case: SOT323 кількість в упаковці: 5 шт | на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Drain-source voltage: -60V Drain current: -250mA On-state resistance: 13Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Mounting: SMD Case: SOT323 | на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJC7439_R1_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V | на замовлення 5826 шт: термін постачання 21-31 дні (днів) |
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PJC7439_R1_00001 | Panjit | MOSFET 60V P-Channel Enhancement Mode MOSFET | на замовлення 2745 шт: термін постачання 21-30 дні (днів) |
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PJC7439_R1_00001 | Panjit International Inc. | Description: 60V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJC7472B_R1_00001 | Panjit | MOSFET /C2B/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-60TAMN/NF60TA-QI02/PJ/// | товар відсутній | |||||||||||||||
PJC7476_R1_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE | на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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PJC7476_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.3A On-state resistance: 9Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Mounting: SMD Case: SOT323 кількість в упаковці: 1 шт | на замовлення 2984 шт: термін постачання 14-21 дні (днів) |
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PJC7476_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.3A On-state resistance: 9Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Mounting: SMD Case: SOT323 | на замовлення 2984 шт: термін постачання 21-30 дні (днів) |
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PJC7476_R1_00001 | Panjit | MOSFET 100V P-Channel Enhancement Mode MOSFET-ESD Protected | на замовлення 2687 шт: термін постачання 21-30 дні (днів) |
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PJC7476_R1_00001 | Panjit International Inc. | Description: 100V N-CHANNEL ENHANCEMENT MODE | товар відсутній | |||||||||||||||
PJCAP | Switchcraft Inc. | Description: HI-AMP POWER JACK CAP Packaging: Bulk Color: Black For Use With/Related Products: Power Jack Accessory Type: Cap (Cover) | на замовлення 39925 шт: термін постачання 21-31 дні (днів) |
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PJCAP | Switchcraft | DC Power Connectors HI-AMPERAGE POWER JA | на замовлення 1424 шт: термін постачання 21-30 дні (днів) |
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PJCDCV14 | на замовлення 100 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
PJClamp0502Q | на замовлення 33000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||||
PJCLAMP0504A | PANJIT | QFM1.6.. | на замовлення 4000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||
PJCLAMP0504A | PANJIT | QFM1.6.. | на замовлення 4000 шт: термін постачання 14-28 дні (днів) | |||||||||||||||
PJCX28631CB1-RF | на замовлення 4000 шт: термін постачання 14-28 дні (днів) |