Продукція > BXW
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
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BXW03C75 | на замовлення 1500 шт: термін постачання 14-28 дні (днів) | |||
BXW10M1K2H | BRIDGELUX | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 80.6W Kind of package: tube Gate charge: 29nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -3...20V Pulsed drain current: 40A Mounting: THT Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A On-state resistance: 610mΩ кількість в упаковці: 1 шт | товар відсутній | |
BXW10M1K2H | BRIDGELUX | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 80.6W Kind of package: tube Gate charge: 29nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -3...20V Pulsed drain current: 40A Mounting: THT Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 10A On-state resistance: 610mΩ | товар відсутній | |
BXW18M1K2H | BRIDGELUX | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 72A; 96.9W Technology: SiC Case: TO247-3 Mounting: THT On-state resistance: 345mΩ Kind of package: tube Power dissipation: 96.9W Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: -3...20V Pulsed drain current: 72A Drain-source voltage: 1.2kV Drain current: 18A Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 100 шт | товар відсутній | |
BXW18M1K2H | BRIDGELUX | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 72A; 96.9W Technology: SiC Case: TO247-3 Mounting: THT On-state resistance: 345mΩ Kind of package: tube Power dissipation: 96.9W Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: -3...20V Pulsed drain current: 72A Drain-source voltage: 1.2kV Drain current: 18A Type of transistor: N-MOSFET Polarisation: unipolar | товар відсутній | |
BXW3M1K7H | BRIDGELUX | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -3...20V On-state resistance: 1.69Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced | товар відсутній | |
BXW3M1K7H | BRIDGELUX | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 12A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -3...20V On-state resistance: 1.69Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт | товар відсутній | |
BXW60M1K2J | BRIDGELUX | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 170nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -3...18V Pulsed drain current: 240A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 271.7W кількість в упаковці: 1 шт | товар відсутній | |
BXW60M1K2J | BRIDGELUX | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 240A; 271.7W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 170nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -3...18V Pulsed drain current: 240A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 60A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 271.7W | товар відсутній |