Продукція > AOK
Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AOK040A60 | Alpha & Omega Semiconductor | High Voltage MOSFETs (500V - 1000V) | товар відсутній | |||||||||||
AOK060V65X2 | Alpha & Omega Semiconductor | AOK060V65X2 | товар відсутній | |||||||||||
AOK065V120X2Q | Alpha & Omega Semiconductor | 1200V SiC MOSFETs | товар відсутній | |||||||||||
AOK095A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 38A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V | на замовлення 862 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK095A60 | Alpha & Omega Semiconductor | N Channel Power Transistor | товар відсутній | |||||||||||
AOK10B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 20A 163W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 163 W | товар відсутній | |||||||||||
AOK10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK10N90 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 900V 10A 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK10N90 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 900V 10A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V | товар відсутній | |||||||||||
AOK125A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 28A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V | на замовлення 77 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK15B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK15B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 30A 167W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 196 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 23ns/74ns Switching Energy: 510µJ (on), 110µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 167 W | товар відсутній | |||||||||||
AOK160A60 | Alpha & Omega Semiconductor | N Channel Power Transistor | товар відсутній | |||||||||||
AOK160A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 24A TO247 | на замовлення 240 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK18N65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V | товар відсутній | |||||||||||
AOK18N65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 T/R | товар відсутній | |||||||||||
AOK20B120D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 340mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK20B120D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 67.5nC Kind of package: tube Turn-off time: 423ns Collector-emitter saturation voltage: 1.54V Turn-off switching energy: 0.94mJ кількість в упаковці: 1 шт | товар відсутній | |||||||||||
AOK20B120D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 20A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/152ns Switching Energy: 940µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 67.5 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 340 W | товар відсутній | |||||||||||
AOK20B120D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 67.5nC Kind of package: tube Turn-off time: 423ns Collector-emitter saturation voltage: 1.54V Turn-off switching energy: 0.94mJ | товар відсутній | |||||||||||
AOK20B120E1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 333000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK20B120E1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 60.5nC Kind of package: tube Turn-off time: 339ns Collector-emitter saturation voltage: 1.68V Turn-off switching energy: 0.83mJ кількість в упаковці: 240 шт | товар відсутній | |||||||||||
AOK20B120E1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/134ns Switching Energy: 830µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 60.5 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 333 W | товар відсутній | |||||||||||
AOK20B120E1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 60.5nC Kind of package: tube Turn-off time: 339ns Collector-emitter saturation voltage: 1.68V Turn-off switching energy: 0.83mJ | товар відсутній | |||||||||||
AOK20B120E2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 53.5nC Kind of package: tube Turn-off time: 314ns Collector-emitter saturation voltage: 1.75V Turn-off switching energy: 0.82mJ | товар відсутній | |||||||||||
AOK20B120E2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK20B120E2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 53.5nC Kind of package: tube Turn-off time: 314ns Collector-emitter saturation voltage: 1.75V Turn-off switching energy: 0.82mJ кількість в упаковці: 1 шт | товар відсутній | |||||||||||
AOK20B120E2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 20A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/123ns Switching Energy: 820µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 53.5 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 250 W | товар відсутній | |||||||||||
AOK20B135D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 40A 340000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-off time: 480ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 1.05mJ кількість в упаковці: 1 шт | на замовлення 9 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK20B135D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1350V 40A 340W TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/156ns Switching Energy: 1.05mJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 66 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 80 A Power - Max: 340 W | на замовлення 163 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK20B135D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 20A Power dissipation: 170W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-off time: 480ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 1.05mJ | на замовлення 9 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK20B135E1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1350V 20A 340W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/134ns Switching Energy: 800µJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 58 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 80 A Power - Max: 250 W | товар відсутній | |||||||||||
AOK20B135E1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 20A; 125W; TO247; 1.26mJ Turn-off time: 311ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 2.2V Collector current: 20A Turn-off switching energy: 1.26mJ Mounting: THT Collector-emitter voltage: 1.35kV Power dissipation: 125W Gate charge: 58nC Pulsed collector current: 80A Type of transistor: IGBT Kind of package: tube Case: TO247 | на замовлення 4 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK20B135E1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 40A 250000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK20B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 40A 139000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK20B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 40A 180W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 20ns/66ns Switching Energy: 760µJ (on), 180µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 24.6 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 74 A Power - Max: 167 W | товар відсутній | |||||||||||
AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ Type of transistor: IGBT Collector current: 20A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 74A Turn-on time: 45ns Turn-off time: 107ns Collector-emitter voltage: 600V Power dissipation: 83W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 24.6nC Turn-on switching energy: 0.76mJ Turn-off switching energy: 0.18mJ | на замовлення 148 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK20B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 83W; TO247; Eoff: 0.18mJ; Eon: 0.76mJ Type of transistor: IGBT Collector current: 20A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 74A Turn-on time: 45ns Turn-off time: 107ns Collector-emitter voltage: 600V Power dissipation: 83W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 24.6nC Turn-on switching energy: 0.76mJ Turn-off switching energy: 0.18mJ кількість в упаковці: 1 шт | на замовлення 148 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK20B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK20B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 20A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 322 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/122ns Switching Energy: 470µJ (on), 270µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 227 W | товар відсутній | |||||||||||
AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ | товар відсутній | |||||||||||
AOK20B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.27mJ; Eon: 0.47mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 51ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.27mJ Turn-on switching energy: 0.47mJ кількість в упаковці: 240 шт | товар відсутній | |||||||||||
AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ | товар відсутній | |||||||||||
AOK20B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 114W; TO247; Eoff: 0.28mJ; Eon: 0.58mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 114W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 46nC Kind of package: tube Turn-on time: 59ns Turn-off time: 178ns Collector-emitter saturation voltage: 1.7V Turn-off switching energy: 0.28mJ Turn-on switching energy: 0.58mJ кількість в упаковці: 1 шт | товар відсутній | |||||||||||
AOK20B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK20B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 292 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/123ns Switching Energy: 580µJ (on), 280µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 227 W | на замовлення 109 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK20N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 T/R | товар відсутній | |||||||||||
AOK20N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V | на замовлення 148 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK20S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V | товар відсутній | |||||||||||
AOK20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK22N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 T/R | товар відсутній | |||||||||||
AOK22N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 22A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V | товар відсутній | |||||||||||
AOK2500L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 14A/180A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | на замовлення 263 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK27S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 27A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V | товар відсутній | |||||||||||
AOK27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247 T/R | товар відсутній | |||||||||||
AOK29S50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 29A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V | товар відсутній | |||||||||||
AOK29S50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK29S50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK30B120D2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 30A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/115ns Switching Energy: 1.28mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 67 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 340 W | товар відсутній | |||||||||||
AOK30B120D2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 60A 340000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Type of transistor: IGBT Collector current: 30A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-off time: 340ns Collector-emitter voltage: 1.2kV Power dissipation: 170W Kind of package: tube Collector-emitter saturation voltage: 1.77V Gate charge: 67nC Turn-off switching energy: 1.28mJ | на замовлення 206 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK30B120D2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ Type of transistor: IGBT Collector current: 30A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-off time: 340ns Collector-emitter voltage: 1.2kV Power dissipation: 170W Kind of package: tube Collector-emitter saturation voltage: 1.77V Gate charge: 67nC Turn-off switching energy: 1.28mJ кількість в упаковці: 1 шт | на замовлення 206 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK30B135C1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 30A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/110ns Switching Energy: 1.45mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 65 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 120 A Power - Max: 288 W | товар відсутній | |||||||||||
AOK30B135D2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1350V 30A TO-247 | товар відсутній | |||||||||||
AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Type of transistor: IGBT Collector current: 30A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-off time: 362ns Collector-emitter voltage: 1.35kV Power dissipation: 170W Kind of package: tube Collector-emitter saturation voltage: 1.8V Gate charge: 62nC Turn-off switching energy: 1.47mJ | на замовлення 67 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK30B135W1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ Type of transistor: IGBT Collector current: 30A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-off time: 362ns Collector-emitter voltage: 1.35kV Power dissipation: 170W Kind of package: tube Collector-emitter saturation voltage: 1.8V Gate charge: 62nC Turn-off switching energy: 1.47mJ кількість в упаковці: 1 шт | на замовлення 67 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK30B135W1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1350V 60A 340mW 3-Pin(3+Tab) TO-247 Tube | на замовлення 20 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK30B135W1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1350V 30A 170W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: -/129ns Switching Energy: 1.47mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 200 A Power - Max: 340 W | на замовлення 207 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK30B135W1; IGBT+ Diode; 30A; 1350V; 340W; Корпус: TO-247; ALPHA & OMEGA | на замовлення 9 шт: термін постачання 2-3 дні (днів) |
| ||||||||||||
AOK30B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK30B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 278000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK30B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 60A 208W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 137 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/71ns Switching Energy: 1.18mJ (on), 200µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 47 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 128 A Power - Max: 278 W | товар відсутній | |||||||||||
AOK30B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 60A 208W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 20ns/58ns Switching Energy: 1.1mJ (on), 240µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 34 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 208 W | товар відсутній | |||||||||||
AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ Type of transistor: IGBT Collector current: 30A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 96A Turn-on time: 66ns Turn-off time: 89ns Collector-emitter voltage: 600V Power dissipation: 83W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 34nC Turn-on switching energy: 1.1mJ Turn-off switching energy: 0.24mJ кількість в упаковці: 1 шт | на замовлення 164 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK30B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 83W; TO247; Eoff: 0.24mJ; Eon: 1.1mJ Type of transistor: IGBT Collector current: 30A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 96A Turn-on time: 66ns Turn-off time: 89ns Collector-emitter voltage: 600V Power dissipation: 83W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 34nC Turn-on switching energy: 1.1mJ Turn-off switching energy: 0.24mJ | на замовлення 164 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK30B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ Turn-off time: 193ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.66V Collector current: 30A Turn-off switching energy: 0.41mJ Mounting: THT Turn-on switching energy: 1.02mJ Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 63nC Pulsed collector current: 90A Type of transistor: IGBT Turn-on time: 76ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт | товар відсутній | |||||||||||
AOK30B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 150W; TO247; Eoff: 0.41mJ; Eon: 1.02mJ Turn-off time: 193ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.66V Collector current: 30A Turn-off switching energy: 0.41mJ Mounting: THT Turn-on switching energy: 1.02mJ Collector-emitter voltage: 650V Power dissipation: 150W Gate charge: 63nC Pulsed collector current: 90A Type of transistor: IGBT Turn-on time: 76ns Kind of package: tube Case: TO247 | товар відсутній | |||||||||||
AOK30B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 60A 300mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK30B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 339 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 34ns/138ns Switching Energy: 1.02mJ (on), 410µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 300 W | на замовлення 142 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK40B120H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 128nC Kind of package: tube Turn-on time: 133ns Turn-off time: 375ns Collector-emitter saturation voltage: 1.8V Turn-off switching energy: 1.24mJ Turn-on switching energy: 2.45mJ | товар відсутній | |||||||||||
AOK40B120H1 | Alpha & Omega Semiconductor | 1200V, 40A AlphaIGBT TM With Soft and Fast Recovery Anti-parallel Diode | товар відсутній | |||||||||||
AOK40B120H1 Код товару: 175217 | Транзистори > IGBT | товар відсутній | ||||||||||||
AOK40B120H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 128nC Kind of package: tube Turn-on time: 133ns Turn-off time: 375ns Collector-emitter saturation voltage: 1.8V Turn-off switching energy: 1.24mJ Turn-on switching energy: 2.45mJ кількість в упаковці: 1 шт | товар відсутній | |||||||||||
AOK40B120H1; IGBT+ Diode; 40A; 1200V; 500W; Корпус: TO-247; ALPHA & OMEGA | на замовлення 22 шт: термін постачання 2-3 дні (днів) |
| ||||||||||||
AOK40B120M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 340 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 90ns/226ns Switching Energy: 3.87mJ (on), 1.25mJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 140 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 600 W | товар відсутній | |||||||||||
AOK40B120M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 1200V 80A 600000mW 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK40B120N1 | Alpha & Omega Semiconductor | Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode | товар відсутній | |||||||||||
AOK40B120N1 | Alpha & Omega Semiconductor | Alpha IGBT With Soft and Fast Recovery Anti Parallel Diode | товар відсутній | |||||||||||
AOK40B120N1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 1200V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 300 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 57ns/146ns Switching Energy: 3.4mJ (on), 1.4mJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 600 W | товар відсутній | |||||||||||
AOK40B120P1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товар відсутній | |||||||||||
AOK40B120P1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247 Switching Energy: 2.5mJ (on), 1.3mJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 202 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 600 W Td (on/off) @ 25°C: 53ns/210ns | товар відсутній | |||||||||||
AOK40B120P1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товар відсутній | |||||||||||
AOK40B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 80A 312.5W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 138 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 28ns/77ns Switching Energy: 1.72mJ (on), 300µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 63.5 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 312.5 W | товар відсутній | |||||||||||
AOK40B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 80A 312500mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK40B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK40B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 80A 278000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK40B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 80A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 127 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 29ns/74ns Switching Energy: 1.55mJ (on), 300µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 278 W | на замовлення 238 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK40B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 111W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 53ns Turn-off time: 102ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.3mJ Turn-on switching energy: 1.55mJ | на замовлення 226 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK40B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 111W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 53ns Turn-off time: 102ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.3mJ Turn-on switching energy: 1.55mJ кількість в упаковці: 1 шт | на замовлення 226 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK40B65GQ1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товар відсутній | |||||||||||
AOK40B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 346 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 41ns/130ns Switching Energy: 1.27mJ (on), 460µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W | на замовлення 45 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK40B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-on time: 82ns Turn-off time: 173ns Collector-emitter voltage: 650V Power dissipation: 150W Kind of package: tube Collector-emitter saturation voltage: 1.9V Gate charge: 63nC Turn-on switching energy: 1.27mJ Turn-off switching energy: 0.46mJ | на замовлення 150 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK40B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK40B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-on time: 82ns Turn-off time: 173ns Collector-emitter voltage: 650V Power dissipation: 150W Kind of package: tube Collector-emitter saturation voltage: 1.9V Gate charge: 63nC Turn-on switching energy: 1.27mJ Turn-off switching energy: 0.46mJ кількість в упаковці: 1 шт | на замовлення 150 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-on time: 64ns Turn-off time: 152ns Collector-emitter voltage: 650V Power dissipation: 105W Kind of package: tube Collector-emitter saturation voltage: 2.05V Gate charge: 61nC Turn-on switching energy: 1.17mJ Turn-off switching energy: 0.54mJ кількість в упаковці: 1 шт | на замовлення 186 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK40B65H2AL | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK40B65H2AL | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 40A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 315 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 1.17mJ (on), 540µJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W | товар відсутній | |||||||||||
AOK40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-on time: 64ns Turn-off time: 152ns Collector-emitter voltage: 650V Power dissipation: 105W Kind of package: tube Collector-emitter saturation voltage: 2.05V Gate charge: 61nC Turn-on switching energy: 1.17mJ Turn-off switching energy: 0.54mJ | на замовлення 186 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK40B65H2AL | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 260mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK40B65H2AL_002 | Alpha & Omega Semiconductor | AOK40B65H2AL_002 | на замовлення 32640 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK40B65HQ1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W | товар відсутній | |||||||||||
AOK40B65HQ2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W | товар відсутній | |||||||||||
AOK40B65HQ3 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | товар відсутній | |||||||||||
AOK40B65HQ3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 31ns/110ns Switching Energy: 1.19mJ (on), 380µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 312 W | товар відсутній | |||||||||||
AOK40B65M3 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 80A 300mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK40B65M3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 365 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 40ns/125ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 59 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W | на замовлення 10 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK40N30L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247 Mounting: THT Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 85mΩ Drain current: 25A Drain-source voltage: 300V Case: TO247 Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±30V | товар відсутній | |||||||||||
AOK40N30L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK40N30L | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247 Mounting: THT Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 85mΩ Drain current: 25A Drain-source voltage: 300V Case: TO247 Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 240 шт | товар відсутній | |||||||||||
AOK40N30L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 300V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V | товар відсутній | |||||||||||
AOK42S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 39A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V | товар відсутній | |||||||||||
AOK42S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK50B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 168A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 98ns Turn-off time: 104ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.5mJ Turn-on switching energy: 2.37mJ | на замовлення 4 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK50B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK50B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK50B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 125W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 168A Mounting: THT Gate charge: 64nC Kind of package: tube Turn-on time: 98ns Turn-off time: 104ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.5mJ Turn-on switching energy: 2.37mJ кількість в упаковці: 1 шт | на замовлення 4 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK50B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 100A 312W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 132 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 26ns/68ns Switching Energy: 2.37mJ (on), 500µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 64 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 168 A Power - Max: 312 W | на замовлення 65 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK50B65GL1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 50A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 282ns/915ns Switching Energy: 3.37mJ (on), 1.59mJ (off) Test Condition: 300V, 50A, 100Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 312 W | товар відсутній | |||||||||||
AOK50B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 50A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 261 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 37ns/141ns Switching Energy: 1.92mJ (on), 850µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 76 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 375 W | товар відсутній | |||||||||||
AOK50B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 188W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 76nC Kind of package: tube Turn-on time: 111ns Turn-off time: 206ns Collector-emitter saturation voltage: 1.9V Turn-off switching energy: 0.85mJ Turn-on switching energy: 1.92mJ | на замовлення 154 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK50B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 100A 375W 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK50B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 100A 375000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK50B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 188W; TO247; Eoff: 0.85mJ; Eon: 1.92mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 188W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 76nC Kind of package: tube Turn-on time: 111ns Turn-off time: 206ns Collector-emitter saturation voltage: 1.9V Turn-off switching energy: 0.85mJ Turn-on switching energy: 1.92mJ кількість в упаковці: 1 шт | на замовлення 154 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK50B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 102nC Kind of package: tube Turn-on time: 114ns Turn-off time: 268ns Collector-emitter saturation voltage: 1.72V Turn-off switching energy: 1.03mJ Turn-on switching energy: 2.09mJ | товар відсутній | |||||||||||
AOK50B65M2 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 250W; TO247; Eoff: 1.03mJ; Eon: 2.09mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 102nC Kind of package: tube Turn-on time: 114ns Turn-off time: 268ns Collector-emitter saturation voltage: 1.72V Turn-off switching energy: 1.03mJ Turn-on switching energy: 2.09mJ кількість в упаковці: 1 шт | товар відсутній | |||||||||||
AOK50B65M2 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 50A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 327 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 46ns/182ns Switching Energy: 2.09mJ (on), 1.03mJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 102 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 500 W | на замовлення 229 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK53S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK53S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 53A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 26.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3034 pF @ 100 V | товар відсутній | |||||||||||
AOK53S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK53S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK53S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 53A TO247 | товар відсутній | |||||||||||
AOK5N100 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO247 | товар відсутній | |||||||||||
AOK5N100 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK5N100L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 1000V 4A TO247 | товар відсутній | |||||||||||
AOK5N100L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK60B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 210A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 109ns Turn-off time: 105ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.73mJ Turn-on switching energy: 3.1mJ кількість в упаковці: 1 шт | товар відсутній | |||||||||||
AOK60B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 120A 417W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 137 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 32ns/74ns Switching Energy: 3.1mJ (on), 730µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 210 A Power - Max: 417 W | товар відсутній | |||||||||||
AOK60B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 167W; TO247; Eoff: 0.73mJ; Eon: 3.1mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 167W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 210A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 109ns Turn-off time: 105ns Collector-emitter saturation voltage: 1.85V Turn-off switching energy: 0.73mJ Turn-on switching energy: 3.1mJ | товар відсутній | |||||||||||
AOK60B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 120A 417000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK60B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 120A 417mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK60B60D1; IGBT; With Diode; 60A; 600V; 417W; Корпус: TO-247; ALPHA & OMEGA | на замовлення 1 шт: термін постачання 2-3 дні (днів) |
| ||||||||||||
AOK60B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 180A Mounting: THT Gate charge: 90nC Kind of package: tube Turn-on time: 118ns Turn-off time: 268ns Collector-emitter saturation voltage: 1.88V Turn-off switching energy: 1.17mJ Turn-on switching energy: 2.42mJ кількість в упаковці: 1 шт | на замовлення 226 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK60B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 288 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 39ns/153ns Switching Energy: 2.42mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | товар відсутній | |||||||||||
AOK60B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.17mJ; Eon: 2.42mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 180A Mounting: THT Gate charge: 90nC Kind of package: tube Turn-on time: 118ns Turn-off time: 268ns Collector-emitter saturation voltage: 1.88V Turn-off switching energy: 1.17mJ Turn-on switching energy: 2.42mJ | на замовлення 226 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK60B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ Turn-off time: 270ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.95V Collector current: 60A Turn-off switching energy: 1.17mJ Mounting: THT Turn-on switching energy: 2.36mJ Collector-emitter voltage: 650V Power dissipation: 166W Gate charge: 84nC Pulsed collector current: 180A Type of transistor: IGBT Turn-on time: 113ns Kind of package: tube Case: TO247 | на замовлення 209 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK60B65H2AL Код товару: 173446 | Мікросхеми > Інші мікросхеми | товар відсутній | ||||||||||||
AOK60B65H2AL | Alpha & Omega Semiconductor | 650V, 60A Alpha IGBT With soft and fast recovery anti-parallel diode | товар відсутній | |||||||||||
AOK60B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 166W; TO247; Eoff: 1.17mJ; Eon: 2.36mJ Turn-off time: 270ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.95V Collector current: 60A Turn-off switching energy: 1.17mJ Mounting: THT Turn-on switching energy: 2.36mJ Collector-emitter voltage: 650V Power dissipation: 166W Gate charge: 84nC Pulsed collector current: 180A Type of transistor: IGBT Turn-on time: 113ns Kind of package: tube Case: TO247 кількість в упаковці: 1 шт | на замовлення 209 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK60B65H2AL | Alpha & Omega Semiconductor Inc. | Description: IGBT 60A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 318 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 35ns/168ns Switching Energy: 2.36mJ (on), 1.17mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 416 W | товар відсутній | |||||||||||
AOK60B65H2AL; IGBT+ Diode; 60A; 650V; 416W; Корпус: TO-247; ALPHA & OMEGA (IRGP4068D) | на замовлення 184 шт: термін постачання 2-3 дні (днів) |
| ||||||||||||
AOK60B65HQ3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 60A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 36ns/157ns Switching Energy: 2.21mJ (on), 1.2mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | товар відсутній | |||||||||||
AOK60B65M3 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.3mJ; Eon: 2.6mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 180A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-on time: 125ns Turn-off time: 285ns Collector-emitter saturation voltage: 1.94V Turn-off switching energy: 1.3mJ Turn-on switching energy: 2.6mJ кількість в упаковці: 1 шт | на замовлення 145 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK60B65M3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 346 ns Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 60A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 44ns/166ns Switching Energy: 2.6mJ (on), 1.3mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 106 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 500 W | товар відсутній | |||||||||||
AOK60B65M3 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 250W; TO247; Eoff: 1.3mJ; Eon: 2.6mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 180A Mounting: THT Gate charge: 106nC Kind of package: tube Turn-on time: 125ns Turn-off time: 285ns Collector-emitter saturation voltage: 1.94V Turn-off switching energy: 1.3mJ Turn-on switching energy: 2.6mJ | на замовлення 145 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK60N30L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK60N30L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 300V 60A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK60N30L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 300V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 30A, 10V Power Dissipation (Max): 658W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-247 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V | товар відсутній | |||||||||||
AOK66518 | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) | товар відсутній | |||||||||||
AOK66613 | Alpha & Omega Semiconductor | 60V N-Channel MOSFET | товар відсутній | |||||||||||
AOK66613 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 58.5A/120A TO247 | на замовлення 590 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK75B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ Type of transistor: IGBT Collector current: 75A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 290A Turn-on time: 104ns Turn-off time: 155ns Collector-emitter voltage: 600V Power dissipation: 300W Kind of package: tube Collector-emitter saturation voltage: 1.72V Gate charge: 118nC Turn-on switching energy: 3.7mJ Turn-off switching energy: 1.3mJ | на замовлення 182 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK75B60D1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 300W; TO247; Eoff: 1.3mJ; Eon: 3.7mJ Type of transistor: IGBT Collector current: 75A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 290A Turn-on time: 104ns Turn-off time: 155ns Collector-emitter voltage: 600V Power dissipation: 300W Kind of package: tube Collector-emitter saturation voltage: 1.72V Gate charge: 118nC Turn-on switching energy: 3.7mJ Turn-off switching energy: 1.3mJ кількість в упаковці: 1 шт | на замовлення 182 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK75B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 150A 600000mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOK75B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 150A 500W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 147 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 33ns/84ns Switching Energy: 3.7mJ (on), 1.3mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 118 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 290 A Power - Max: 500 W | товар відсутній | |||||||||||
AOK75B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ Type of transistor: IGBT Collector current: 75A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 225A Turn-on time: 140ns Turn-off time: 319ns Collector-emitter voltage: 650V Power dissipation: 278W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 109nC Turn-on switching energy: 3.77mJ Turn-off switching energy: 2.04mJ кількість в упаковці: 1 шт | на замовлення 234 шт: термін постачання 14-21 дні (днів) |
| ||||||||||
AOK75B65H1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 150A 556W | товар відсутній | |||||||||||
AOK75B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 75A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 295 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 47ns/175ns Switching Energy: 3.77mJ (on), 2.04mJ (off) Test Condition: 400V, 75A, 4Ohm, 15V Gate Charge: 109 nC Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 556 W | товар відсутній | |||||||||||
AOK75B65H1 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 278W; TO247; Eoff: 2.04mJ; Eon: 3.77mJ Type of transistor: IGBT Collector current: 75A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 225A Turn-on time: 140ns Turn-off time: 319ns Collector-emitter voltage: 650V Power dissipation: 278W Kind of package: tube Collector-emitter saturation voltage: 1.85V Gate charge: 109nC Turn-on switching energy: 3.77mJ Turn-off switching energy: 2.04mJ | на замовлення 234 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOK8N80 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V 7.4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | товар відсутній | |||||||||||
AOK8N80 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK8N80L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 800V 7.4A 3-Pin(3+Tab) TO-247 | товар відсутній | |||||||||||
AOK8N80L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V 7.4A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V | товар відсутній | |||||||||||
AOK9N90 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-247 Tube | на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOK9N90 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 900V 9A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V Power Dissipation (Max): 368W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 25 V | товар відсутній | |||||||||||
AOKS30B60D1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 60A 208mW 3-Pin(3+Tab) TO-247 Tube | товар відсутній | |||||||||||
AOKS30B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 20ns/58ns Switching Energy: 1.1mJ (on), 240µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 34 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 208 W | на замовлення 21 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOKS40B60D1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 29ns/74ns Switching Energy: 1.55mJ (on), 300µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 45 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 278 W | на замовлення 14 шт: термін постачання 21-31 дні (днів) |
| ||||||||||
AOKS40B65H1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 41ns/130ns Switching Energy: 1.27mJ (on), 460µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 63 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W | товар відсутній | |||||||||||
AOKS40B65H2AL | Alpha & Omega Semiconductor | AOKS40B65H2AL | товар відсутній | |||||||||||
AOKS40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-on time: 64ns Turn-off time: 151ns Collector-emitter voltage: 650V Power dissipation: 105W Kind of package: tube Collector-emitter saturation voltage: 2.05V Gate charge: 61nC Turn-on switching energy: 1.17mJ Turn-off switching energy: 0.54mJ | на замовлення 234 шт: термін постачання 21-30 дні (днів) |
| ||||||||||
AOKS40B65H2AL | Alpha & Omega Semiconductor Inc. | Description: IGBT 40A Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 1.17mJ (on), 540µJ (off) Test Condition: 400V, 40A, 7.5Ohm, 15V Gate Charge: 61 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W | товар відсутній | |||||||||||
AOKS40B65H2AL | ALPHA & OMEGA SEMICONDUCTOR | Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 120A Turn-on time: 64ns Turn-off time: 151ns Collector-emitter voltage: 650V Power dissipation: 105W Kind of package: tube Collector-emitter saturation voltage: 2.05V Gate charge: 61nC Turn-on switching energy: 1.17mJ Turn-off switching energy: 0.54mJ кількість в упаковці: 1 шт | на замовлення 234 шт: термін постачання 14-21 дні (днів) |
|