Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11375) > Сторінка 150 з 190
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BR246-20B3-6B-008M | Microsemi Corporation |
 Description: RELAY GEN PURPOSE DPDT 10A 6VPackaging: Bulk Mounting Type: Chassis Mount Coil Voltage: 6VDC Operating Temperature: -70°C ~ 125°C Termination Style: Solder Hook Relay Type: General Purpose Coil Current: 300 mA Coil Type: Non Latching Contact Form: DPDT (2 Form C) Contact Rating (Current): 10 A Switching Voltage: 208VAC, 28VDC - Max Must Release Voltage: 1.8 VDC Must Operate Voltage: 4.5 VDC Operate Time: 15 ms Release Time: 15 ms Part Status: Active |
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APT8024LVRG | Microsemi Corporation | Description: MOSFET N-CH 800V 33A TO264 |
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P6KE13CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 11.1VWM 18.2VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 11.1V Supplier Device Package: Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 600W Power Line Protection: No |
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APT30M70SVRG | Microsemi Corporation |
Description: MOSFET N-CH 300V 48A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D3 [S] Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V |
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APT30M85BVFRG | Microsemi Corporation |
Description: MOSFET N-CH 300V 40A TO247 |
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APT30M85SVFRG | Microsemi Corporation | Description: MOSFET N-CH 300V 40A D3PAK |
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APT30GS60KRG | Microsemi Corporation |
Description: IGBT 600V 54A 250W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: NPT Td (on/off) @ 25°C: 16ns/360ns Switching Energy: 570µJ (off) Test Condition: 400V, 30A, 9.1Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 113 A Power - Max: 250 W |
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APT30GP60B2DLG | Microsemi Corporation |
Description: IGBT 600V 100A 463W TMAX Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: T-MAX™ IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 463 W |
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APT30GP60JDQ1 | Microsemi Corporation |
Description: IGBT MODULE 600V 67A 245W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 245 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V |
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| MAX24210EVKIT# | Microsemi Corporation |
Description: KIT EVALUATION MAX24210 Packaging: Box Function: Multi-Purpose Type: Timing Utilized IC / Part: MAX24205, MAX24210 Supplied Contents: Board(s), Cable(s), Power Supply Embedded: Yes, MCU, 8-Bit |
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| MAX24288EVKIT# | Microsemi Corporation |
Description: KIT EVALUATION MAX24288 Packaging: Box Function: Ethernet, Clock and Timestamper Type: Interface Utilized IC / Part: MAX24288 Supplied Contents: Board(s) Contents: Board(s) |
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MMAD1109/TR13 | Microsemi Corporation |
Description: TVS DIODE 75VWM 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 75V (Max) Supplier Device Package: 14-SOIC Unidirectional Channels: 7 Voltage - Breakdown (Min): 90V Power Line Protection: No Part Status: Obsolete |
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MMAD1109E3/TR13 | Microsemi Corporation |
Description: TVS DIODE 75VWM 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: Ethernet Capacitance @ Frequency: 1.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 75V (Max) Supplier Device Package: 14-SOIC Unidirectional Channels: 7 Voltage - Breakdown (Min): 90V Power Line Protection: No Part Status: Obsolete |
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| MXPLAD6.5KP150Ae3 | Microsemi Corporation |
Description: TVS DIODE 150VWM 243VC PLAD |
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JANTX1N4486DUS | Microsemi Corporation |
Description: DIODE ZENER 75V 1.5W D5A Packaging: Bulk Tolerance: ±1% Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 130 Ohms Supplier Device Package: D-5A Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 250 nA @ 60 V Grade: Military Qualification: MIL-PRF-19500/406 |
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| LX1673-06CLQ | Microsemi Corporation |
Description: IC REG DL BUCK/LNR SYNC 20MLPQ Packaging: Bulk Package / Case: 20-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Frequency - Switching: 600kHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: 20-MLPQ (5x5) Voltage/Current - Output 1: Controller Voltage/Current - Output 2: Controller w/LED Driver: No w/Supervisor: No w/Sequencer: No Part Status: Obsolete Number of Outputs: 2 |
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LX1673-06CPW | Microsemi Corporation |
Description: IC REG DL BUCK/LNR SYNC 20TSSOP Packaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Frequency - Switching: 600kHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: 20-TSSOP Voltage/Current - Output 1: Controller Voltage/Current - Output 2: Controller w/LED Driver: No w/Supervisor: No w/Sequencer: No Part Status: Obsolete Number of Outputs: 2 |
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APT58MJ50J | Microsemi Corporation |
Description: MOSFET N-CH 500V 58A ISOTOP |
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| FST30050 | Microsemi Corporation |
Description: DIODE MOD SCHOTT 50V 150A TO244 Packaging: Bulk Package / Case: TO-244AB Mounting Type: Screw Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: TO-244 Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A Current - Reverse Leakage @ Vr: 4 mA @ 50 V |
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SMBJ5338C/TR13 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 5W SMBJ |
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SMBJ5338CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 5W SMBJ |
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SMBJ5338AE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 5W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1.5 Ohms Supplier Device Package: DO-214AA (SMBJ) Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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SMBJ5338A/TR13 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 5W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1.5 Ohms Supplier Device Package: DO-214AA (SMBJ) Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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MXP5KE160CAe3 | Microsemi Corporation |
Description: TVS DIODE 160VWM 259VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.9A Voltage - Reverse Standoff (Typ): 160V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 178V Voltage - Clamping (Max) @ Ipp: 259V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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1N5382AE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 140V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 140 V Impedance (Max) (Zzt): 230 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 101 V |
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1N5387/TR8 | Microsemi Corporation |
Description: DIODE ZENER 190V 5W T18 |
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MXP5KE54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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PD01B22B | Microsemi Corporation |
Description: DISPLAY PLASMA GRAPHIC 128X32MOD Packaging: Box Display Type: Plasma Backlight: Without Backlight Interface: Serial Viewing Area: 323.85mm W x 80.01mm H Dot Pixels: 32 x 128 Part Status: Obsolete |
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SP-450-033-03 | Microsemi Corporation |
Description: LCD MODULE 14 DIG 5 X 3 PASSIVE |
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SP-450-034-02 | Microsemi Corporation |
Description: LCD MODULE 5 DIG 5 X 1 PASSIVE |
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SP-450-037 | Microsemi Corporation |
Description: LCD MODULE 4 DIG 4 X 1 PASSIVE |
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JAN1N6626U | Microsemi Corporation | Description: DIODE GEN PURP 200V 1.75A D-5B |
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| JANTXV1N6626U | Microsemi Corporation | Description: DIODE GEN PURP 200V 1.75A E-MELF |
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| BR230-20C1-6V-001M | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 6V |
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| BR230-890C1-48V-025L | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 48V |
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| BR231-450A2-28V | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 28V |
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| BR230-290C1-28V | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 28V |
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| BR230-890B2-48V-029L | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 48V |
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| BR230-890C1-48V-025M | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 48V |
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| BR231D-450C2-28V | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 28V |
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| BR230-290B3-28V | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 28V |
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| BR230D-290A2-28V-022L | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 28V |
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| BR230D-290B3-28V | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 28V |
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| BR230-20A2-6V-006L | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 6V |
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| BR230-290B1-28V-018M | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 28V Packaging: Bulk Mounting Type: Chassis Mount Coil Voltage: 28VDC Operating Temperature: -70°C ~ 125°C Termination Style: Solder Hook Relay Type: General Purpose Coil Current: 96.6 mA Coil Type: Non Latching Contact Form: 4PDT (4 Form C) Contact Rating (Current): 10 A Switching Voltage: 208VAC, 28VDC - Max Must Release Voltage: 5.1 VDC Must Operate Voltage: 18 VDC Operate Time: 15 ms Release Time: 15 ms Load - Max Switching: 2080VA, 280W |
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| BR230-890C3-48V-031M | Microsemi Corporation |
Description: RELAY GEN PURPOSE 4PDT 10A 48V |
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| JANTXV1N6629US | Microsemi Corporation |
Description: DIODE GEN PURP 800V 1.4A D5B |
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JANTX1N6620U | Microsemi Corporation |
Description: DIODE GEN PURP 200V 1.2A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Qualification: MIL-PRF-19500/585 |
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JANTXV1N6620U | Microsemi Corporation | Description: DIODE GEN PURP 200V 1.2A A-MELF |
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JANTX1N6623U | Microsemi Corporation | Description: DIODE GEN PURP 800V 1A A-MELF |
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JAN1N6628U | Microsemi Corporation |
Description: DIODE GEN PURP 600V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 600 V Qualification: MIL-PRF-19500/590 |
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JANTX1N6624U | Microsemi Corporation | Description: DIODE GEN PURP 900V 1A D-5A |
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JANTXV1N6621U | Microsemi Corporation |
Description: DIODE GEN PURP 400V 1.2A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V Qualification: MIL-PRF-19500/585 |
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| JAN1N6627U | Microsemi Corporation | Description: DIODE GEN PURP 400V 1.75A E-MELF |
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JAN1N6622U | Microsemi Corporation | Description: DIODE GEN PURP 600V 1.2A A-MELF |
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JAN1N6623U | Microsemi Corporation | Description: DIODE GEN PURP 800V 1A A-MELF |
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JANTXV1N6623U | Microsemi Corporation | Description: DIODE GEN PURP 800V 1A A-MELF |
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JAN1N6629U | Microsemi Corporation |
Description: DIODE GEN PURP 800V 1.4A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1.4A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A Current - Reverse Leakage @ Vr: 2 µA @ 800 V Qualification: MIL-PRF-19500/590 |
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JAN1N6625U | Microsemi Corporation | Description: DIODE GEN PURP 1KV 1A D-5A |
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JANTXV1N6624U | Microsemi Corporation | Description: DIODE GEN PURP 900V 1A D-5A |
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| BR246-20B3-6B-008M |
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Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 6V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 6VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 300 mA
Coil Type: Non Latching
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Release Voltage: 1.8 VDC
Must Operate Voltage: 4.5 VDC
Operate Time: 15 ms
Release Time: 15 ms
Part Status: Active
Description: RELAY GEN PURPOSE DPDT 10A 6V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 6VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 300 mA
Coil Type: Non Latching
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Release Voltage: 1.8 VDC
Must Operate Voltage: 4.5 VDC
Operate Time: 15 ms
Release Time: 15 ms
Part Status: Active
товару немає в наявності
| APT8024LVRG |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 800V 33A TO264
Description: MOSFET N-CH 800V 33A TO264
товару немає в наявності
| P6KE13CAE3/TR13 |
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Виробник: Microsemi Corporation
Description: TVS DIODE 11.1VWM 18.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 11.1VWM 18.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
| APT30M70SVRG |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 300V 48A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3 [S]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Description: MOSFET N-CH 300V 48A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3 [S]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
товару немає в наявності
| APT30M85BVFRG |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 300V 40A TO247
Description: MOSFET N-CH 300V 40A TO247
товару немає в наявності
| APT30M85SVFRG |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 300V 40A D3PAK
Description: MOSFET N-CH 300V 40A D3PAK
товару немає в наявності
| APT30GS60KRG |
|
Виробник: Microsemi Corporation
Description: IGBT 600V 54A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/360ns
Switching Energy: 570µJ (off)
Test Condition: 400V, 30A, 9.1Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 113 A
Power - Max: 250 W
Description: IGBT 600V 54A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/360ns
Switching Energy: 570µJ (off)
Test Condition: 400V, 30A, 9.1Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 113 A
Power - Max: 250 W
товару немає в наявності
| APT30GP60B2DLG |
|
Виробник: Microsemi Corporation
Description: IGBT 600V 100A 463W TMAX
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: T-MAX™
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
Description: IGBT 600V 100A 463W TMAX
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: T-MAX™
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/55ns
Switching Energy: 260µJ (on), 250µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 463 W
товару немає в наявності
| APT30GP60JDQ1 |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 67A 245W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 245 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
Description: IGBT MODULE 600V 67A 245W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 245 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
товару немає в наявності
| MAX24210EVKIT# |
|
Виробник: Microsemi Corporation
Description: KIT EVALUATION MAX24210
Packaging: Box
Function: Multi-Purpose
Type: Timing
Utilized IC / Part: MAX24205, MAX24210
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Description: KIT EVALUATION MAX24210
Packaging: Box
Function: Multi-Purpose
Type: Timing
Utilized IC / Part: MAX24205, MAX24210
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
товару немає в наявності
| MAX24288EVKIT# |
|
Виробник: Microsemi Corporation
Description: KIT EVALUATION MAX24288
Packaging: Box
Function: Ethernet, Clock and Timestamper
Type: Interface
Utilized IC / Part: MAX24288
Supplied Contents: Board(s)
Contents: Board(s)
Description: KIT EVALUATION MAX24288
Packaging: Box
Function: Ethernet, Clock and Timestamper
Type: Interface
Utilized IC / Part: MAX24288
Supplied Contents: Board(s)
Contents: Board(s)
товару немає в наявності
| MMAD1109/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 75VWM 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 75V (Max)
Supplier Device Package: 14-SOIC
Unidirectional Channels: 7
Voltage - Breakdown (Min): 90V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 75VWM 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 75V (Max)
Supplier Device Package: 14-SOIC
Unidirectional Channels: 7
Voltage - Breakdown (Min): 90V
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
| MMAD1109E3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 75VWM 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 75V (Max)
Supplier Device Package: 14-SOIC
Unidirectional Channels: 7
Voltage - Breakdown (Min): 90V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 75VWM 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 75V (Max)
Supplier Device Package: 14-SOIC
Unidirectional Channels: 7
Voltage - Breakdown (Min): 90V
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
| MXPLAD6.5KP150Ae3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 150VWM 243VC PLAD
Description: TVS DIODE 150VWM 243VC PLAD
товару немає в наявності
| JANTX1N4486DUS |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 75V 1.5W D5A
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: D-5A
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 250 nA @ 60 V
Grade: Military
Qualification: MIL-PRF-19500/406
Description: DIODE ZENER 75V 1.5W D5A
Packaging: Bulk
Tolerance: ±1%
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 130 Ohms
Supplier Device Package: D-5A
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 250 nA @ 60 V
Grade: Military
Qualification: MIL-PRF-19500/406
товару немає в наявності
| LX1673-06CLQ |
|
Виробник: Microsemi Corporation
Description: IC REG DL BUCK/LNR SYNC 20MLPQ
Packaging: Bulk
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Frequency - Switching: 600kHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 20-MLPQ (5x5)
Voltage/Current - Output 1: Controller
Voltage/Current - Output 2: Controller
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC 20MLPQ
Packaging: Bulk
Package / Case: 20-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Frequency - Switching: 600kHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 20-MLPQ (5x5)
Voltage/Current - Output 1: Controller
Voltage/Current - Output 2: Controller
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
товару немає в наявності
| LX1673-06CPW |
|
Виробник: Microsemi Corporation
Description: IC REG DL BUCK/LNR SYNC 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Frequency - Switching: 600kHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 20-TSSOP
Voltage/Current - Output 1: Controller
Voltage/Current - Output 2: Controller
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Frequency - Switching: 600kHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 20-TSSOP
Voltage/Current - Output 1: Controller
Voltage/Current - Output 2: Controller
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
товару немає в наявності
| APT58MJ50J |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 500V 58A ISOTOP
Description: MOSFET N-CH 500V 58A ISOTOP
товару немає в наявності
| FST30050 |
|
Виробник: Microsemi Corporation
Description: DIODE MOD SCHOTT 50V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
Description: DIODE MOD SCHOTT 50V 150A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-244
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 200 A
Current - Reverse Leakage @ Vr: 4 mA @ 50 V
товару немає в наявності
| SMBJ5338C/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 5W SMBJ
Description: DIODE ZENER 5.1V 5W SMBJ
товару немає в наявності
| SMBJ5338CE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 5W SMBJ
Description: DIODE ZENER 5.1V 5W SMBJ
товару немає в наявності
| SMBJ5338AE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товару немає в наявності
| SMBJ5338A/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товару немає в наявності
| MXP5KE160CAe3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 160VWM 259VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
| 1N5382AE3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 140V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 140 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 101 V
Description: DIODE ZENER 140V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 140 V
Impedance (Max) (Zzt): 230 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 101 V
товару немає в наявності
| 1N5387/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 190V 5W T18
Description: DIODE ZENER 190V 5W T18
товару немає в наявності
| MXP5KE54A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
| PD01B22B |
|
Виробник: Microsemi Corporation
Description: DISPLAY PLASMA GRAPHIC 128X32MOD
Packaging: Box
Display Type: Plasma
Backlight: Without Backlight
Interface: Serial
Viewing Area: 323.85mm W x 80.01mm H
Dot Pixels: 32 x 128
Part Status: Obsolete
Description: DISPLAY PLASMA GRAPHIC 128X32MOD
Packaging: Box
Display Type: Plasma
Backlight: Without Backlight
Interface: Serial
Viewing Area: 323.85mm W x 80.01mm H
Dot Pixels: 32 x 128
Part Status: Obsolete
товару немає в наявності
| SP-450-033-03 |
|
Виробник: Microsemi Corporation
Description: LCD MODULE 14 DIG 5 X 3 PASSIVE
Description: LCD MODULE 14 DIG 5 X 3 PASSIVE
товару немає в наявності
| SP-450-034-02 |
|
Виробник: Microsemi Corporation
Description: LCD MODULE 5 DIG 5 X 1 PASSIVE
Description: LCD MODULE 5 DIG 5 X 1 PASSIVE
товару немає в наявності
| SP-450-037 |
|
Виробник: Microsemi Corporation
Description: LCD MODULE 4 DIG 4 X 1 PASSIVE
Description: LCD MODULE 4 DIG 4 X 1 PASSIVE
товару немає в наявності
| JAN1N6626U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 200V 1.75A D-5B
Description: DIODE GEN PURP 200V 1.75A D-5B
товару немає в наявності
| JANTXV1N6626U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 200V 1.75A E-MELF
Description: DIODE GEN PURP 200V 1.75A E-MELF
товару немає в наявності
| BR230-20C1-6V-001M |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 6V
Description: RELAY GEN PURPOSE 4PDT 10A 6V
товару немає в наявності
| BR230-890C1-48V-025L |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 48V
Description: RELAY GEN PURPOSE 4PDT 10A 48V
товару немає в наявності
| BR231-450A2-28V |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 28V
Description: RELAY GEN PURPOSE 4PDT 10A 28V
товару немає в наявності
| BR230-290C1-28V |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 28V
Description: RELAY GEN PURPOSE 4PDT 10A 28V
товару немає в наявності
| BR230-890B2-48V-029L |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 48V
Description: RELAY GEN PURPOSE 4PDT 10A 48V
товару немає в наявності
| BR230-890C1-48V-025M |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 48V
Description: RELAY GEN PURPOSE 4PDT 10A 48V
товару немає в наявності
| BR231D-450C2-28V |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 28V
Description: RELAY GEN PURPOSE 4PDT 10A 28V
товару немає в наявності
| BR230-290B3-28V |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 28V
Description: RELAY GEN PURPOSE 4PDT 10A 28V
товару немає в наявності
| BR230D-290A2-28V-022L |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 28V
Description: RELAY GEN PURPOSE 4PDT 10A 28V
товару немає в наявності
| BR230D-290B3-28V |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 28V
Description: RELAY GEN PURPOSE 4PDT 10A 28V
товару немає в наявності
| BR230-20A2-6V-006L |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 6V
Description: RELAY GEN PURPOSE 4PDT 10A 6V
товару немає в наявності
| BR230-290B1-28V-018M |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 28V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 28VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 96.6 mA
Coil Type: Non Latching
Contact Form: 4PDT (4 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Release Voltage: 5.1 VDC
Must Operate Voltage: 18 VDC
Operate Time: 15 ms
Release Time: 15 ms
Load - Max Switching: 2080VA, 280W
Description: RELAY GEN PURPOSE 4PDT 10A 28V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 28VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 96.6 mA
Coil Type: Non Latching
Contact Form: 4PDT (4 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Release Voltage: 5.1 VDC
Must Operate Voltage: 18 VDC
Operate Time: 15 ms
Release Time: 15 ms
Load - Max Switching: 2080VA, 280W
товару немає в наявності
| BR230-890C3-48V-031M |
|
Виробник: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 48V
Description: RELAY GEN PURPOSE 4PDT 10A 48V
товару немає в наявності
| JANTXV1N6629US |
|
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 800V 1.4A D5B
Description: DIODE GEN PURP 800V 1.4A D5B
товару немає в наявності
| JANTX1N6620U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 200V 1.2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: MIL-PRF-19500/585
Description: DIODE GEN PURP 200V 1.2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: MIL-PRF-19500/585
товару немає в наявності
| JANTXV1N6620U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 200V 1.2A A-MELF
Description: DIODE GEN PURP 200V 1.2A A-MELF
товару немає в наявності
| JANTX1N6623U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 800V 1A A-MELF
Description: DIODE GEN PURP 800V 1A A-MELF
товару немає в наявності
| JAN1N6628U |
|
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 600V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: MIL-PRF-19500/590
товару немає в наявності
| JANTX1N6624U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 900V 1A D-5A
Description: DIODE GEN PURP 900V 1A D-5A
товару немає в наявності
| JANTXV1N6621U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 400V 1.2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Qualification: MIL-PRF-19500/585
Description: DIODE GEN PURP 400V 1.2A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Qualification: MIL-PRF-19500/585
товару немає в наявності
| JAN1N6627U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 400V 1.75A E-MELF
Description: DIODE GEN PURP 400V 1.75A E-MELF
товару немає в наявності
| JAN1N6622U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.2A A-MELF
Description: DIODE GEN PURP 600V 1.2A A-MELF
товару немає в наявності
| JAN1N6623U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 800V 1A A-MELF
Description: DIODE GEN PURP 800V 1A A-MELF
товару немає в наявності
| JANTXV1N6623U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 800V 1A A-MELF
Description: DIODE GEN PURP 800V 1A A-MELF
товару немає в наявності
| JAN1N6629U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 800V 1.4A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.4A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 800V 1.4A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.4A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.4 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: MIL-PRF-19500/590
товару немає в наявності
| JAN1N6625U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A D-5A
Description: DIODE GEN PURP 1KV 1A D-5A
товару немає в наявності
| JANTXV1N6624U |
Виробник: Microsemi Corporation
Description: DIODE GEN PURP 900V 1A D-5A
Description: DIODE GEN PURP 900V 1A D-5A
товару немає в наявності