Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11406) > Сторінка 128 з 191
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
1N5232A (DO-35)TR | Microsemi Corporation |
 Description: DIODE ZENER 5.6V 500MW DO35Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
товар відсутній |
|||||||||
|
|
1N5232A (DO-35)TR | Microsemi Corporation |
Description: DIODE ZENER 5.6V 500MW DO35 Packaging: Cut Tape (CT) Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
на замовлення 4271 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
|
1N5233BDO35 | Microsemi Corporation |
Description: DIODE ZENER 6V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V |
товар відсутній |
|||||||||
|
|
1N5234BDO35 | Microsemi Corporation |
Description: DIODE ZENER 6.2V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Discontinued at Digi-Key Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 4 V |
товар відсутній |
|||||||||
 |
1N5235BDO35 | Microsemi Corporation |
Description: DIODE ZENER 6.8V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
товар відсутній |
|||||||||
|
|
1N5236BDO35 | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6 V |
товар відсутній |
|||||||||
|
|
1N5239BDO35 | Microsemi Corporation |
Description: DIODE ZENER 9.1V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V |
товар відсутній |
|||||||||
|
|
1N5245BDO35 | Microsemi Corporation |
Description: DIODE ZENER 15V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
товар відсутній |
|||||||||
 |
1N5251BDO35 | Microsemi Corporation |
Description: DIODE ZENER 22V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 29 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 17 V |
товар відсутній |
|||||||||
 |
1N5262BDO35 | Microsemi Corporation |
Description: DIODE ZENER 51V 500MW DO35 |
товар відсутній |
|||||||||
|
|
1N5263BDO35 | Microsemi Corporation |
Description: DIODE ZENER 56V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 56 V Impedance (Max) (Zzt): 150 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 43 V |
товар відсутній |
|||||||||
|
|
1N5264BDO35 | Microsemi Corporation |
Description: DIODE ZENER 60V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 60 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 46 V |
на замовлення 1935 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
|
1N5265BDO35 | Microsemi Corporation |
Description: DIODE ZENER 62V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 185 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 47 V |
на замовлення 8938 шт: термін постачання 21-31 дні (днів) |
|
||||||||
|
|
1N5266BDO35 | Microsemi Corporation |
Description: DIODE ZENER 68V 500MW DO35 |
товар відсутній |
|||||||||
|
|
1N5267BDO35 | Microsemi Corporation |
Description: DIODE ZENER 75V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 270 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 56 V |
товар відсутній |
|||||||||
|
|
1N5268BDO35 | Microsemi Corporation |
Description: DIODE ZENER 82V 500MW DO35 Packaging: Bag Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 330 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 62 V |
товар відсутній |
|||||||||
|
|
1N5270BDO35 | Microsemi Corporation |
Description: DIODE ZENER 91V 500MW DO35 |
товар відсутній |
|||||||||
|
|
1N5272BDO35 | Microsemi Corporation |
Description: DIODE ZENER 110V 500MW DO35 Tolerance: ±5% Packaging: Bag Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 750 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 84 V |
товар відсутній |
|||||||||
|
|
1N5273BDO35 | Microsemi Corporation |
Description: DIODE ZENER 120V 500MW DO35 |
товар відсутній |
|||||||||
|
|
1N5274BDO35 | Microsemi Corporation |
Description: DIODE ZENER 130V 500MW DO35 |
товар відсутній |
|||||||||
|
|
1N5276BDO35 | Microsemi Corporation |
Description: DIODE ZENER 150V 500MW DO35 |
товар відсутній |
|||||||||
|
|
1N5278BDO35TR | Microsemi Corporation |
Description: DIODE ZENER 170V 500MW DO35 Tolerance: ±5% Packaging: Bag Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 170 V Impedance (Max) (Zzt): 1900 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 129 V |
на замовлення 4808 шт: термін постачання 21-31 дні (днів) |
|
||||||||
 |
1N5279BDO35TR | Microsemi Corporation |
Description: DIODE ZENER 180V 500MW DO35 |
товар відсутній |
|||||||||
|
|
1N5243A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 13V 500MW DO35 Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V |
товар відсутній |
|||||||||
|
|
1N5243B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 13V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 13 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V |
товар відсутній |
|||||||||
|
|
1N5244A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 14V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
товар відсутній |
|||||||||
|
|
1N5244B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 14V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
товар відсутній |
|||||||||
|
|
1N5245A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 15V 500MW DO35 Packaging: Bulk Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V |
товар відсутній |
|||||||||
|
|
1N5245B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 15V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
товар відсутній |
|||||||||
 |
LX1686CPW | Microsemi Corporation |
Description: IC CCFL CNTRL 116KHZ 24TSSOP Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 84kHz ~ 116kHz Type: CCFL Controller Operating Temperature: 0°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Supplier Device Package: 24-TSSOP Dimming: Yes Current - Supply: 5 mA |
товар відсутній |
|||||||||
|
|
LX1686ECPW | Microsemi Corporation |
Description: IC CCFL CNTRL 116KHZ 24TSSOP Packaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 84kHz ~ 116kHz Type: CCFL Controller Operating Temperature: 0°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Supplier Device Package: 24-TSSOP Dimming: Yes Current - Supply: 5 mA |
товар відсутній |
|||||||||
 |
JAN2N6788 | Microsemi Corporation |
Description: MOSFET N-CH 100V 6A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Qualification: MIL-PRF-19500/555 |
товар відсутній |
|||||||||
| JAN2N6788U | Microsemi Corporation |
Description: MOSFET N-CH 100V 4.5A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
товар відсутній |
||||||||||
|
|
JAN2N6790 | Microsemi Corporation |
Description: MOSFET N-CH 200V 3.5A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V |
товар відсутній |
|||||||||
| JAN2N6790U | Microsemi Corporation |
Description: MOSFET N-CH 200V 2.8A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V |
товар відсутній |
||||||||||
|
|
JANTX2N6788 | Microsemi Corporation |
Description: MOSFET N-CH 100V 6A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Qualification: MIL-PRF-19500/555 |
товар відсутній |
|||||||||
| JANTX2N6788U | Microsemi Corporation |
Description: MOSFET N-CH 100V 4.5A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Qualification: MIL-PRF-19500/555 |
товар відсутній |
||||||||||
|
|
JANTX2N6790 | Microsemi Corporation |
Description: MOSFET N-CH 200V 3.5A TO39 Packaging: Bulk Package / Case: TO-205AF Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-39 Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Qualification: MIL-PRF-19500/555 |
товар відсутній |
|||||||||
| JANTX2N6790U | Microsemi Corporation |
Description: MOSFET N-CH 200V 2.8A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Qualification: MIL-PRF-19500/555 |
товар відсутній |
||||||||||
| JANTXV2N6788 | Microsemi Corporation |
Description: MOSFET N-CH 100V 6A TO205AF |
товар відсутній |
||||||||||
| JANTXV2N6788U | Microsemi Corporation |
Description: MOSFET N-CH 100V 4.5A 18ULCC |
товар відсутній |
||||||||||
| JANTXV2N6790 | Microsemi Corporation |
Description: MOSFET N-CH 200V 3.5A TO205AF |
товар відсутній |
||||||||||
| JANTXV2N6790U | Microsemi Corporation |
Description: MOSFET N-CH 200V 2.8A 18ULCC |
товар відсутній |
||||||||||
| SD1057-01H | Microsemi Corporation |
Description: RF POWER TRANSISTOR Packaging: Bulk Part Status: Obsolete |
товар відсутній |
||||||||||
| 2N5031 | Microsemi Corporation |
Description: RF TRANS NPN 10V 400MHZ TO72 Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN Gain: 12dB @ 400MHz Power - Max: 200mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V Frequency - Transition: 400MHz Supplier Device Package: TO-72 Part Status: Obsolete |
товар відсутній |
||||||||||
| A2F060M3E-1CSG288 | Microsemi Corporation |
Description: IC SOC CORTEX-M3 100MHZ 288CSP Packaging: Tray Package / Case: 288-TFBGA, CSPBGA Speed: 100MHz RAM Size: 16KB Operating Temperature: 0°C ~ 85°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 288-CSP (11x11) Architecture: MCU, FPGA Flash Size: 128KB |
товар відсутній |
||||||||||
| A2F060M3E-1CSG288I | Microsemi Corporation |
Description: IC SOC CORTEX-M3 100MHZ 288CSP Packaging: Tray Package / Case: 288-TFBGA, CSPBGA Speed: 100MHz RAM Size: 16KB Operating Temperature: -40°C ~ 100°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 288-CSP (11x11) Architecture: MCU, FPGA Flash Size: 128KB |
товар відсутній |
||||||||||
| A2F060M3E-CSG288 | Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 288CSP Packaging: Tray Package / Case: 288-TFBGA, CSPBGA Speed: 80MHz RAM Size: 16KB Operating Temperature: 0°C ~ 85°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 288-CSP (11x11) Architecture: MCU, FPGA Flash Size: 128KB |
товар відсутній |
||||||||||
| A2F060M3E-CSG288I | Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 288CSP Packaging: Tray Package / Case: 288-TFBGA, CSPBGA Speed: 80MHz RAM Size: 16KB Operating Temperature: -40°C ~ 100°C (TJ) Core Processor: ARM® Cortex®-M3 Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 288-CSP (11x11) Architecture: MCU, FPGA Flash Size: 128KB |
товар відсутній |
||||||||||
 |
1.5KE180CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 154VWM 246VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.1A Voltage - Reverse Standoff (Typ): 154V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 171V Voltage - Clamping (Max) @ Ipp: 246V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
товар відсутній |
|||||||||
 |
JAN1N6104US | Microsemi Corporation |
Description: TVS DIODE 6.2VWM 12.71VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 39.24A Voltage - Reverse Standoff (Typ): 6.2V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.4V Voltage - Clamping (Max) @ Ipp: 12.71V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
товар відсутній |
|||||||||
 |
SMAJ6486CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.6V 1.5W DO214AC |
товар відсутній |
|||||||||
|
|
SMAJ6486E3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.6V 1.5W DO214AC |
товар відсутній |
|||||||||
|
|
SMAJ6487CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.9V 1.5W DO214AC |
товар відсутній |
|||||||||
|
|
SMAJ6487E3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.9V 1.5W DO214AC |
товар відсутній |
|||||||||
|
|
SMAJ6488CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 4.3V 1.5W DO214AC |
товар відсутній |
|||||||||
|
|
SMAJ6488E3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 4.3V 1.5W DO214AC |
товар відсутній |
|||||||||
 |
SMAJ6489CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 4.7V 1.5W DO214AC Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-214AC (SMAJ) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 1 V |
товар відсутній |
|||||||||
|
|
SMAJ6489E3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 4.7V 1.5W DO214AC Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-214AC (SMAJ) Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 4 µA @ 1 V |
товар відсутній |
|||||||||
|
|
SMAJ6490CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 1.5W DO214AC |
товар відсутній |
| 1N5232A (DO-35)TR |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
товар відсутній
| 1N5232A (DO-35)TR |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 4271 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.98 грн |
| 10+ | 120.26 грн |
| 25+ | 102.74 грн |
| 100+ | 77.63 грн |
| 1N5233BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Description: DIODE ZENER 6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
товар відсутній
| 1N5234BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
товар відсутній
| 1N5235BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
товар відсутній
| 1N5236BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
| 1N5239BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
товар відсутній
| 1N5245BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
| 1N5251BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 22V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Description: DIODE ZENER 22V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
| 1N5263BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 56V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Description: DIODE ZENER 56V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
товар відсутній
| 1N5264BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 60V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
Description: DIODE ZENER 60V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
на замовлення 1935 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 183.64 грн |
| 1N5265BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 62V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 185 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Description: DIODE ZENER 62V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 185 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
на замовлення 8938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.42 грн |
| 1N5267BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 75V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
Description: DIODE ZENER 75V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
| 1N5268BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
Description: DIODE ZENER 82V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
товар відсутній
| 1N5272BDO35 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 110V 500MW DO35
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 84 V
Description: DIODE ZENER 110V 500MW DO35
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 84 V
товар відсутній
| 1N5278BDO35TR |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 170V 500MW DO35
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 170 V
Impedance (Max) (Zzt): 1900 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 129 V
Description: DIODE ZENER 170V 500MW DO35
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 170 V
Impedance (Max) (Zzt): 1900 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 129 V
на замовлення 4808 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.76 грн |
| 1N5279BDO35TR |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 180V 500MW DO35
Description: DIODE ZENER 180V 500MW DO35
товар відсутній
| 1N5243A (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
товар відсутній
| 1N5243B (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 13V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Description: DIODE ZENER 13V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
товар відсутній
| 1N5244A (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 14V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 14V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
товар відсутній
| 1N5244B (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 14V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 14V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
товар відсутній
| 1N5245A (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
товар відсутній
| 1N5245B (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
| LX1686CPW |
|
Виробник: Microsemi Corporation
Description: IC CCFL CNTRL 116KHZ 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 84kHz ~ 116kHz
Type: CCFL Controller
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 24-TSSOP
Dimming: Yes
Current - Supply: 5 mA
Description: IC CCFL CNTRL 116KHZ 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 84kHz ~ 116kHz
Type: CCFL Controller
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 24-TSSOP
Dimming: Yes
Current - Supply: 5 mA
товар відсутній
| LX1686ECPW |
|
Виробник: Microsemi Corporation
Description: IC CCFL CNTRL 116KHZ 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 84kHz ~ 116kHz
Type: CCFL Controller
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 24-TSSOP
Dimming: Yes
Current - Supply: 5 mA
Description: IC CCFL CNTRL 116KHZ 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 84kHz ~ 116kHz
Type: CCFL Controller
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 24-TSSOP
Dimming: Yes
Current - Supply: 5 mA
товар відсутній
| JAN2N6788 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
товар відсутній
| JAN2N6788U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
товар відсутній
| JAN2N6790 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Description: MOSFET N-CH 200V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
товар відсутній
| JAN2N6790U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 2.8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Description: MOSFET N-CH 200V 2.8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
товар відсутній
| JANTX2N6788 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
Description: MOSFET N-CH 100V 6A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
товар відсутній
| JANTX2N6788U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
товар відсутній
| JANTX2N6790 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Qualification: MIL-PRF-19500/555
Description: MOSFET N-CH 200V 3.5A TO39
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-39
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Qualification: MIL-PRF-19500/555
товар відсутній
| JANTX2N6790U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 2.8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Qualification: MIL-PRF-19500/555
Description: MOSFET N-CH 200V 2.8A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.5A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Qualification: MIL-PRF-19500/555
товар відсутній
| JANTXV2N6788 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 6A TO205AF
Description: MOSFET N-CH 100V 6A TO205AF
товар відсутній
| JANTXV2N6788U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 4.5A 18ULCC
Description: MOSFET N-CH 100V 4.5A 18ULCC
товар відсутній
| JANTXV2N6790 |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 3.5A TO205AF
Description: MOSFET N-CH 200V 3.5A TO205AF
товар відсутній
| JANTXV2N6790U |
|
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 2.8A 18ULCC
Description: MOSFET N-CH 200V 2.8A 18ULCC
товар відсутній
| SD1057-01H |
товар відсутній
| 2N5031 |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 10V 400MHZ TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Gain: 12dB @ 400MHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V
Frequency - Transition: 400MHz
Supplier Device Package: TO-72
Part Status: Obsolete
Description: RF TRANS NPN 10V 400MHZ TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Gain: 12dB @ 400MHz
Power - Max: 200mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V
Frequency - Transition: 400MHz
Supplier Device Package: TO-72
Part Status: Obsolete
товар відсутній
| A2F060M3E-1CSG288 |
|
Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
товар відсутній
| A2F060M3E-1CSG288I |
|
Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 100MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 100MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
товар відсутній
| A2F060M3E-CSG288 |
|
Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: 0°C ~ 85°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
товар відсутній
| A2F060M3E-CSG288I |
|
Виробник: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Packaging: Tray
Package / Case: 288-TFBGA, CSPBGA
Speed: 80MHz
RAM Size: 16KB
Operating Temperature: -40°C ~ 100°C (TJ)
Core Processor: ARM® Cortex®-M3
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 288-CSP (11x11)
Architecture: MCU, FPGA
Flash Size: 128KB
товар відсутній
| 1.5KE180CAE3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 154VWM 246VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 154VWM 246VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| JAN1N6104US |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 6.2VWM 12.71VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39.24A
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.4V
Voltage - Clamping (Max) @ Ipp: 12.71V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.2VWM 12.71VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39.24A
Voltage - Reverse Standoff (Typ): 6.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.4V
Voltage - Clamping (Max) @ Ipp: 12.71V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товар відсутній
| SMAJ6486CE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO214AC
Description: DIODE ZENER 3.6V 1.5W DO214AC
товар відсутній
| SMAJ6486E3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.6V 1.5W DO214AC
Description: DIODE ZENER 3.6V 1.5W DO214AC
товар відсутній
| SMAJ6487CE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.9V 1.5W DO214AC
Description: DIODE ZENER 3.9V 1.5W DO214AC
товар відсутній
| SMAJ6487E3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.9V 1.5W DO214AC
Description: DIODE ZENER 3.9V 1.5W DO214AC
товар відсутній
| SMAJ6488CE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO214AC
Description: DIODE ZENER 4.3V 1.5W DO214AC
товар відсутній
| SMAJ6488E3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO214AC
Description: DIODE ZENER 4.3V 1.5W DO214AC
товар відсутній
| SMAJ6489CE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 1.5W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Description: DIODE ZENER 4.7V 1.5W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
товар відсутній
| SMAJ6489E3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 1.5W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
Description: DIODE ZENER 4.7V 1.5W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-214AC (SMAJ)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 4 µA @ 1 V
товар відсутній
| SMAJ6490CE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.5W DO214AC
Description: DIODE ZENER 5.1V 1.5W DO214AC
товар відсутній