Продукція > MICRON TECHNOLOGY INC. > Всі товари виробника MICRON TECHNOLOGY INC. (10620) > Сторінка 5 з 177
Фото | Назва | Виробник | Інформація |
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MT48LC8M16A2P-75 IT:G TR | Micron Technology Inc. |
Description: IC DRAM 128MBIT PAR 54TSOP II Packaging: Cut Tape (CT) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Part Status: Obsolete Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
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MT48LC8M16A2P-7E:G TR | Micron Technology Inc. |
Description: IC DRAM 128MBIT PAR 54TSOP II Packaging: Cut Tape (CT) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Part Status: Obsolete Write Cycle Time - Word, Page: 14ns Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
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MT48LC8M16A2TG-75 IT:G TR | Micron Technology Inc. |
Description: IC DRAM 128MBIT PAR 54TSOP II Packaging: Cut Tape (CT) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Part Status: Obsolete Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
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MT48LC8M16A2TG-7E:G TR | Micron Technology Inc. |
Description: IC DRAM 128MBIT PAR 54TSOP II Packaging: Cut Tape (CT) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Part Status: Obsolete Write Cycle Time - Word, Page: 14ns Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
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MT48LC8M32LFB5-8 IT TR | Micron Technology Inc. | Description: IC DRAM 256M PARALLEL 90VFBGA |
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MT48LC8M32LFB5-8 TR | Micron Technology Inc. | Description: IC DRAM 256M PARALLEL 90VFBGA |
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MT48LC8M8A2TG-75:G TR | Micron Technology Inc. | Description: IC DRAM 64MBIT PAR 54TSOP II |
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MT48LC8M8A2TG-7E:G TR | Micron Technology Inc. | Description: IC SDRAM 64MBIT 133MHZ 54TSOP |
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MT48V8M32LFB5-8 IT TR | Micron Technology Inc. | Description: IC SDRAM 256MBIT 125MHZ 90VFBGA |
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MT48V8M32LFB5-8 TR | Micron Technology Inc. | Description: IC SDRAM 256MBIT 125MHZ 90VFBGA |
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MT16VDDF12864HG-335D2 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 200SODIMM |
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MT18VDDF12872G-335D3 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 184RDIMM |
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MT18VDDF12872G-40BD3 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 184RDIMM |
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MT18VDDF12872HG-335D1 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 200SODIMM |
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MT18VDDF12872HG-40BD1 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 200SODIMM |
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MT18VDDT12872AG-335D1 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 184UDIMM |
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MT18VDDT12872AG-40BD1 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 184UDIMM |
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MT36VDDF25672G-335D2 | Micron Technology Inc. | Description: MODULE DDR SDRAM 2GB 184RDIMM |
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MT36VDDF25672G-40BD2 | Micron Technology Inc. | Description: MODULE DDR SDRAM 2GB 184RDIMM |
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MT8VDDT3264HG-335G3 | Micron Technology Inc. | Description: MODULE DDR SDRAM 256MB 200SODIMM |
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MT8VDDT6464HG-335D1 | Micron Technology Inc. | Description: MODULE DDR SDRAM 512MB 200SODIMM |
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MT8VDDT6464HG-40BD1 | Micron Technology Inc. | Description: MODULE DDR SDRAM 512MB 200SODIMM |
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MT9VDDF3272G-335G3 | Micron Technology Inc. |
Description: MODULE DDR SDRAM 256MB 184RDIMM Package / Case: 184-RDIMM Memory Size: 256MB Memory Type: DDR SDRAM Transfer Rate (Mb/s, MT/s, MHz): 167 |
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MT9VDDF3272G-40BG3 | Micron Technology Inc. | Description: MODULE DDR SDRAM 256MB 184RDIMM |
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MT9VDDF6472G-335D3 | Micron Technology Inc. |
Description: MODULE DDR SDRAM 512MB 184RDIMM Package / Case: 184-RDIMM Memory Size: 512MB Memory Type: DDR SDRAM Transfer Rate (Mb/s, MT/s, MHz): 167 |
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MT9VDDF6472G-40BD3 | Micron Technology Inc. | Description: MODULE DDR SDRAM 512MB 184RDIMM |
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MT9VDDT3272AG-335G4 | Micron Technology Inc. |
Description: MODULE DDR SDRAM 256MB 184UDIMM Package / Case: 184-UDIMM Memory Size: 256MB Memory Type: DDR SDRAM Transfer Rate (Mb/s, MT/s, MHz): 167 |
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MT9VDDT3272AG-40BG4 | Micron Technology Inc. | Description: MODULE DDR SDRAM 256MB 184UDIMM |
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MT9VDDT3272HG-40BG2 | Micron Technology Inc. |
Description: MODULE DDR SDRAM 256MB 200SODIMM Packaging: Tray Package / Case: 200-SODIMM Memory Size: 256MB Memory Type: DDR SDRAM Transfer Rate (Mb/s, MT/s, MHz): 200 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MT9VDDT6472AG-335D1 | Micron Technology Inc. | Description: MODULE DDR SDRAM 512MB 184UDIMM |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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MT9VDDT6472AG-40BD1 | Micron Technology Inc. | Description: MODULE DDR SDRAM 512MB 184UDIMM |
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MT9VDDT6472HG-335D2 | Micron Technology Inc. | Description: MODULE DDR SDRAM 512MB 200SODIMM |
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MT9VDDT6472HG-40BD2 | Micron Technology Inc. | Description: MODULE DDR SDRAM 512MB 200SODIMM |
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MT16HTF6464AY-667B4 | Micron Technology Inc. | Description: MODULE DDR2 SDRAM 512MB 240UDIMM |
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MT8HTF3264AY-53EB3 | Micron Technology Inc. | Description: MODULE DDR2 SDRAM 256MB 240UDIMM |
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M25P40-VMN6TP TR | Micron Technology Inc. |
Description: IC FLASH 4MBIT SPI 50MHZ 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SO Write Cycle Time - Word, Page: 15ms, 5ms Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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M25P40-VMN6TP TR | Micron Technology Inc. |
Description: IC FLASH 4MBIT SPI 50MHZ 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SO Write Cycle Time - Word, Page: 15ms, 5ms Memory Interface: SPI Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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MT48LC8M16LFTG-75M:G | Micron Technology Inc. | Description: IC DRAM 128MBIT PAR 54TSOP II |
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MT18HVF12872Y-53EB1 | Micron Technology Inc. | Description: MODULE DDR2 SDRAM 1GB 240RDIMM |
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MT18HVF6472Y-53EB1 | Micron Technology Inc. | Description: MODULE DDR2 SDRAM 512MB 240DIMM |
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MT18VDVF12872DG-40BD4 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 184RDIMM |
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MT18VDVF12872G-40BD4 | Micron Technology Inc. | Description: MODULE DDR SDRAM 1GB 184RDIMM |
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MT9HVF12872KY-53EA1 | Micron Technology Inc. | Description: MODULE DDR2 SDRAM 1GB 244MRDIMM |
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MT9HVF3272KY-53EB1 | Micron Technology Inc. | Description: MOD DDR2 SDRAM 256MB 244MRDIMM |
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MT9HVF6472KY-53EB1 | Micron Technology Inc. | Description: MOD DDR2 SDRAM 512MB 244MRDIMM |
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MT9VDVF6472G-40BD4 | Micron Technology Inc. | Description: MODULE DDR SDRAM 512MB 184RDIMM |
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MT29F2G08AAAWP | Micron Technology Inc. | Description: IC FLASH 2GBIT 48TSOP |
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MT29F2G08AABWP | Micron Technology Inc. | Description: IC FLASH 2GBIT 48TSOP |
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MT29F2G08AABWP-ET | Micron Technology Inc. | Description: IC FLASH 2GBIT 48TSOP |
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MT29F2G16AABWP TR | Micron Technology Inc. | Description: IC FLASH 2GBIT PARALLEL 48TSOP I |
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MT29F2G16AABWP-ET TR | Micron Technology Inc. | Description: IC FLASH 2GBIT PARALLEL 48TSOP I |
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MT29F4G08BABWP TR | Micron Technology Inc. |
Description: IC FLASH 4GBIT PARALLEL 48TSOP I Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 48-TSOP I Memory Interface: Parallel Memory Organization: 512M x 8 DigiKey Programmable: Not Verified |
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MT29F4G08BBBWP TR | Micron Technology Inc. |
Description: IC FLASH 4GBIT PARALLEL 48TSOP I Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 48-TSOP I Memory Interface: Parallel Memory Organization: 512M x 8 DigiKey Programmable: Not Verified |
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MT29F4G16BABWP | Micron Technology Inc. | Description: IC FLASH 4GBIT 48TSOP |
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MT29F2G08AAAWP | Micron Technology Inc. | Description: IC FLASH 2GBIT 48TSOP |
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MT29F2G08AABWP | Micron Technology Inc. | Description: IC FLASH 2GBIT 48TSOP |
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MT29F2G08AABWP-ET | Micron Technology Inc. | Description: IC FLASH 2GBIT 48TSOP |
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MT29F2G16AABWP TR | Micron Technology Inc. | Description: IC FLASH 2GBIT PARALLEL 48TSOP I |
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MT29F2G16AABWP-ET TR | Micron Technology Inc. | Description: IC FLASH 2GBIT PARALLEL 48TSOP I |
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MT29F4G08BABWP | Micron Technology Inc. | Description: IC FLASH 4GBIT 48TSOP |
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MT48LC8M16A2P-75 IT:G TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товар відсутній
MT48LC8M16A2P-7E:G TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товар відсутній
MT48LC8M16A2TG-75 IT:G TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товар відсутній
MT48LC8M16A2TG-7E:G TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Cut Tape (CT)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Part Status: Obsolete
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 5.4 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
товар відсутній
MT48LC8M32LFB5-8 IT TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 256M PARALLEL 90VFBGA
Description: IC DRAM 256M PARALLEL 90VFBGA
товар відсутній
MT48LC8M32LFB5-8 TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 256M PARALLEL 90VFBGA
Description: IC DRAM 256M PARALLEL 90VFBGA
товар відсутній
MT48LC8M8A2TG-75:G TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 64MBIT PAR 54TSOP II
Description: IC DRAM 64MBIT PAR 54TSOP II
товар відсутній
MT48LC8M8A2TG-7E:G TR |
Виробник: Micron Technology Inc.
Description: IC SDRAM 64MBIT 133MHZ 54TSOP
Description: IC SDRAM 64MBIT 133MHZ 54TSOP
товар відсутній
MT48V8M32LFB5-8 IT TR |
Виробник: Micron Technology Inc.
Description: IC SDRAM 256MBIT 125MHZ 90VFBGA
Description: IC SDRAM 256MBIT 125MHZ 90VFBGA
товар відсутній
MT48V8M32LFB5-8 TR |
Виробник: Micron Technology Inc.
Description: IC SDRAM 256MBIT 125MHZ 90VFBGA
Description: IC SDRAM 256MBIT 125MHZ 90VFBGA
товар відсутній
MT16VDDF12864HG-335D2 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 200SODIMM
Description: MODULE DDR SDRAM 1GB 200SODIMM
товар відсутній
MT18VDDF12872G-335D3 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 184RDIMM
Description: MODULE DDR SDRAM 1GB 184RDIMM
товар відсутній
MT18VDDF12872G-40BD3 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 184RDIMM
Description: MODULE DDR SDRAM 1GB 184RDIMM
товар відсутній
MT18VDDF12872HG-335D1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 200SODIMM
Description: MODULE DDR SDRAM 1GB 200SODIMM
товар відсутній
MT18VDDF12872HG-40BD1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 200SODIMM
Description: MODULE DDR SDRAM 1GB 200SODIMM
товар відсутній
MT18VDDT12872AG-335D1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 184UDIMM
Description: MODULE DDR SDRAM 1GB 184UDIMM
товар відсутній
MT18VDDT12872AG-40BD1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 184UDIMM
Description: MODULE DDR SDRAM 1GB 184UDIMM
товар відсутній
MT36VDDF25672G-335D2 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 2GB 184RDIMM
Description: MODULE DDR SDRAM 2GB 184RDIMM
товар відсутній
MT36VDDF25672G-40BD2 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 2GB 184RDIMM
Description: MODULE DDR SDRAM 2GB 184RDIMM
товар відсутній
MT8VDDT3264HG-335G3 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 256MB 200SODIMM
Description: MODULE DDR SDRAM 256MB 200SODIMM
товар відсутній
MT8VDDT6464HG-335D1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 200SODIMM
Description: MODULE DDR SDRAM 512MB 200SODIMM
товар відсутній
MT8VDDT6464HG-40BD1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 200SODIMM
Description: MODULE DDR SDRAM 512MB 200SODIMM
товар відсутній
MT9VDDF3272G-335G3 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 256MB 184RDIMM
Package / Case: 184-RDIMM
Memory Size: 256MB
Memory Type: DDR SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 167
Description: MODULE DDR SDRAM 256MB 184RDIMM
Package / Case: 184-RDIMM
Memory Size: 256MB
Memory Type: DDR SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 167
товар відсутній
MT9VDDF3272G-40BG3 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 256MB 184RDIMM
Description: MODULE DDR SDRAM 256MB 184RDIMM
товар відсутній
MT9VDDF6472G-335D3 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 184RDIMM
Package / Case: 184-RDIMM
Memory Size: 512MB
Memory Type: DDR SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 167
Description: MODULE DDR SDRAM 512MB 184RDIMM
Package / Case: 184-RDIMM
Memory Size: 512MB
Memory Type: DDR SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 167
товар відсутній
MT9VDDF6472G-40BD3 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 184RDIMM
Description: MODULE DDR SDRAM 512MB 184RDIMM
товар відсутній
MT9VDDT3272AG-335G4 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 256MB 184UDIMM
Package / Case: 184-UDIMM
Memory Size: 256MB
Memory Type: DDR SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 167
Description: MODULE DDR SDRAM 256MB 184UDIMM
Package / Case: 184-UDIMM
Memory Size: 256MB
Memory Type: DDR SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 167
товар відсутній
MT9VDDT3272AG-40BG4 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 256MB 184UDIMM
Description: MODULE DDR SDRAM 256MB 184UDIMM
товар відсутній
MT9VDDT3272HG-40BG2 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 256MB 200SODIMM
Packaging: Tray
Package / Case: 200-SODIMM
Memory Size: 256MB
Memory Type: DDR SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 200
Description: MODULE DDR SDRAM 256MB 200SODIMM
Packaging: Tray
Package / Case: 200-SODIMM
Memory Size: 256MB
Memory Type: DDR SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 200
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4411.32 грн |
MT9VDDT6472AG-335D1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 184UDIMM
Description: MODULE DDR SDRAM 512MB 184UDIMM
на замовлення 19 шт:
термін постачання 21-31 дні (днів)MT9VDDT6472AG-40BD1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 184UDIMM
Description: MODULE DDR SDRAM 512MB 184UDIMM
товар відсутній
MT9VDDT6472HG-335D2 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 200SODIMM
Description: MODULE DDR SDRAM 512MB 200SODIMM
товар відсутній
MT9VDDT6472HG-40BD2 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 200SODIMM
Description: MODULE DDR SDRAM 512MB 200SODIMM
товар відсутній
MT16HTF6464AY-667B4 |
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 512MB 240UDIMM
Description: MODULE DDR2 SDRAM 512MB 240UDIMM
товар відсутній
MT8HTF3264AY-53EB3 |
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 256MB 240UDIMM
Description: MODULE DDR2 SDRAM 256MB 240UDIMM
товар відсутній
M25P40-VMN6TP TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 4MBIT SPI 50MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT SPI 50MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
M25P40-VMN6TP TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 4MBIT SPI 50MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4MBIT SPI 50MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 50 MHz
Memory Format: FLASH
Supplier Device Package: 8-SO
Write Cycle Time - Word, Page: 15ms, 5ms
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товар відсутній
MT48LC8M16LFTG-75M:G |
Виробник: Micron Technology Inc.
Description: IC DRAM 128MBIT PAR 54TSOP II
Description: IC DRAM 128MBIT PAR 54TSOP II
товар відсутній
MT18HVF12872Y-53EB1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 1GB 240RDIMM
Description: MODULE DDR2 SDRAM 1GB 240RDIMM
товар відсутній
MT18HVF6472Y-53EB1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 512MB 240DIMM
Description: MODULE DDR2 SDRAM 512MB 240DIMM
товар відсутній
MT18VDVF12872DG-40BD4 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 184RDIMM
Description: MODULE DDR SDRAM 1GB 184RDIMM
товар відсутній
MT18VDVF12872G-40BD4 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 1GB 184RDIMM
Description: MODULE DDR SDRAM 1GB 184RDIMM
товар відсутній
MT9HVF12872KY-53EA1 |
Виробник: Micron Technology Inc.
Description: MODULE DDR2 SDRAM 1GB 244MRDIMM
Description: MODULE DDR2 SDRAM 1GB 244MRDIMM
товар відсутній
MT9HVF3272KY-53EB1 |
Виробник: Micron Technology Inc.
Description: MOD DDR2 SDRAM 256MB 244MRDIMM
Description: MOD DDR2 SDRAM 256MB 244MRDIMM
товар відсутній
MT9HVF6472KY-53EB1 |
Виробник: Micron Technology Inc.
Description: MOD DDR2 SDRAM 512MB 244MRDIMM
Description: MOD DDR2 SDRAM 512MB 244MRDIMM
товар відсутній
MT9VDVF6472G-40BD4 |
Виробник: Micron Technology Inc.
Description: MODULE DDR SDRAM 512MB 184RDIMM
Description: MODULE DDR SDRAM 512MB 184RDIMM
товар відсутній
MT29F2G08AABWP-ET |
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT 48TSOP
Description: IC FLASH 2GBIT 48TSOP
товар відсутній
MT29F2G16AABWP TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
товар відсутній
MT29F2G16AABWP-ET TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
товар відсутній
MT29F4G08BABWP TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
товар відсутній
MT29F4G08BBBWP TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 4GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 4GBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
товар відсутній
MT29F2G08AABWP-ET |
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT 48TSOP
Description: IC FLASH 2GBIT 48TSOP
товар відсутній
MT29F2G16AABWP TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
товар відсутній
MT29F2G16AABWP-ET TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
Description: IC FLASH 2GBIT PARALLEL 48TSOP I
товар відсутній