Продукція > MICRON TECHNOLOGY INC. > Всі товари виробника MICRON TECHNOLOGY INC. (10670) > Сторінка 173 з 178
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MT46V128M8P-75:A TR | Micron Technology Inc. |
 Description: IC DRAM 1GBIT PARALLEL 66TSOPPackaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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MT46V128M4FN-6:F TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 60FBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (10x12.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
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MT46V128M4TG-6T:F TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
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MT46V128M4FN-75:D TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 60FBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (10x12.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
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MT46V128M4TG-75:D TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
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MT46V128M8TG-75:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PARALLEL 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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MT46V128M8P-6T IT:A | Micron Technology Inc. |
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP Packaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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MT46H128M16LFDD-48 IT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Packaging: Bulk Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 60-VFBGA (8x9) Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
на замовлення 4236 шт: термін постачання 21-31 дні (днів) |
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MT46H128M16LFDD-48 AIT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Packaging: Bulk Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 60-VFBGA (8x9) Grade: Automotive Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT46H128M16LFDD-48 WT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Packaging: Bulk Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 60-VFBGA (8x9) Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
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MT53E128M32D2FW-046 WT:A | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Bulk Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified |
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MT53E128M32D2FW-046 WT:A TR | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified |
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| MT53E128M32D2FW-046 IT:A TR | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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MT53E128M32D2FW-046 IT:A | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified |
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| MT53E128M32D2FW-046 AIT:A TR | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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MT53E128M32D2FW-046 AIT:A | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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| MT53E128M32D2FW-046 AAT:A TR | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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MT53E128M32D2FW-046 AAT:A | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT53E128M32D2FW-046 AUT:A TR | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT53E384M32D2FW-046 IT:E TR | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 12Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 384M x 32 DigiKey Programmable: Not Verified |
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MT53E128M32D2FW-046 AUT:A | Micron Technology Inc. |
Description: LPDDR4 4G 128MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT53E384M32D2FW-046 IT:E | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 12Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 384M x 32 DigiKey Programmable: Not Verified |
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| MT53E384M32D2FW-046 AIT:E TR | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
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| MT53E384M32D2FW-046 AIT:E | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Box DigiKey Programmable: Not Verified |
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MT53E256M32D2FW-046 AIT:B TR | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT53E256M32D2FW-046 AIT:B | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT53E256M32D2FW-046 AAT:B TR | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT53E256M32D2FW-046 AAT:B | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT53E256M32D2FW-046 AUT:B TR | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT53E256M32D2FW-046 AUT:B | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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| MT53E1G32D2FW-046 WT:C TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Memory Size: 32Gbit Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Memory Interface: Parallel Memory Organization: 1G x 32 |
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| MT53E1G32D2FW-046 WT:C | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tray Package / Case: 200-TFBGA Memory Size: 32Gbit Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Memory Interface: Parallel Memory Organization: 1G x 32 |
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| MT53E1G32D2FW-046 IT:C TR | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Memory Size: 32Gbit Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Memory Interface: Parallel Memory Organization: 1G x 32 |
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| MT53E1G32D2FW-046 IT:C | Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tray Package / Case: 200-TFBGA Memory Size: 32Gbit Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Memory Interface: Parallel Memory Organization: 1G x 32 |
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MT48H32M16LFB4-6 AT:C TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 54VFBGA Packaging: Tape & Reel (TR) Package / Case: 54-VFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPSDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 54-VFBGA (8x8) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MT40A256M16GE-075E AUT:B TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PARALLEL 96FBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.14V ~ 1.26V Technology: SDRAM - DDR4 Clock Frequency: 1.33 GHz Memory Format: DRAM Supplier Device Package: 96-FBGA (9x14) Grade: Automotive Memory Interface: Parallel Memory Organization: 256M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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MTFC8GAMALBH-AIT ES TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 153TFBGA Packaging: Tape & Reel (TR) Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified Grade: Automotive |
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MTFC8GAMALNA-AAT | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 100TBGA Packaging: Tray Package / Case: 100-TBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 100-TBGA (14x18) Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified Grade: Automotive |
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MTFC8GAMALNA-AAT TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 100TBGA Packaging: Tape & Reel (TR) Package / Case: 100-TBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 100-TBGA (14x18) Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified Grade: Automotive |
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MTFC8GAMALBH-AAT ES TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 153TFBGA Packaging: Tape & Reel (TR) Package / Case: 153-TFBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 153-TFBGA (11.5x13) Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified Grade: Automotive |
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MTFC8GAMALNA-AAT ES TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 100TBGA Packaging: Tape & Reel (TR) Package / Case: 100-TBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 100-TBGA (14x18) Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified Grade: Automotive |
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| N2M400GDB321A3CF TR | Micron Technology Inc. |
Description: IC FLASH 64GBIT MMC 52MHZ Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 52 MHz Memory Format: FLASH Memory Interface: MMC Memory Organization: 8G x 8 DigiKey Programmable: Not Verified |
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| EDF8164A3MC-GD-F-R TR | Micron Technology Inc. |
Description: IC DRAM 8GBIT PARALLEL 800MHZ Packaging: Tape & Reel (TR) Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR3 Clock Frequency: 800 MHz Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 64 DigiKey Programmable: Not Verified |
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| EDF8164A3PK-JD-F-D | Micron Technology Inc. |
Description: IC DRAM 8GBIT PAR 216FBGA Packaging: Tray Package / Case: 216-WFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 216-FBGA (12x12) Memory Interface: Parallel Memory Organization: 128M x 64 DigiKey Programmable: Not Verified |
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| EDF8164A3PK-JD-F-R | Micron Technology Inc. |
Description: IC DRAM 8GBIT PAR 216FBGA Packaging: Tape & Reel (TR) Package / Case: 216-WFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR3 Clock Frequency: 933 MHz Memory Format: DRAM Supplier Device Package: 216-FBGA (12x12) Memory Interface: Parallel Memory Organization: 128M x 64 DigiKey Programmable: Not Verified |
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| EDF8164A3MD-GD-F-R | Micron Technology Inc. |
Description: IC DRAM 8GBIT PARALLEL 800MHZ Packaging: Bulk Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -30°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR3 Clock Frequency: 800 MHz Memory Format: DRAM Memory Interface: Parallel Memory Organization: 128M x 64 DigiKey Programmable: Not Verified |
товар відсутній |
||||||||
| MTFDKBA256TFK-1BC1AABYY TR | Micron Technology Inc. |
Description: IC SSD FLASH 256GB PCIE Packaging: Tape & Reel (TR) |
товар відсутній |
||||||||
| MTFDKBA256TFK-1BC15ABYY TR | Micron Technology Inc. |
Description: IC SSD FLASH 256GB PCIE Packaging: Tape & Reel (TR) |
товар відсутній |
||||||||
| MTFDKBA256TFK-2BC1AABYY | Micron Technology Inc. |
Description: 2450 256GB M.2 SSD Packaging: Tray Memory Size: 256GB Memory Type: Solid State Drive (SSD) - Type: NVMe PCIe Gen 4 Form Factor: M.2 Module Speed - Read: 3.5GB/s Speed - Write: 1.6GB/s |
товар відсутній |
||||||||
| MTFDKBA256TGE-1BL1AABYY | Micron Technology Inc. |
Description: 2550 256GB M.2 SSD Packaging: Tray |
товар відсутній |
||||||||
| MTFDKBA256TGE-1BL15ABYY | Micron Technology Inc. |
Description: 2550 256GB M.2 SSD Packaging: Tray |
товар відсутній |
||||||||
| MTFDKBA256TFK-1BC1AABYY | Micron Technology Inc. |
Description: IC SSD FLASH 256GB PCIE Packaging: Tray |
товар відсутній |
||||||||
| MTFDKBA256TFK-1BC15ABYY | Micron Technology Inc. |
Description: IC SSD FLASH 256GB PCIE Packaging: Tray |
товар відсутній |
||||||||
| MTFDKBA512QGN-1BN15ABYY | Micron Technology Inc. |
Description: 2500 512GB M.2 SSD Packaging: Tray |
товар відсутній |
||||||||
| MTFDKBA512QFM-1BD1AABYY | Micron Technology Inc. |
Description: 2400 512GB M.2 SSD Packaging: Box Memory Size: 512GB Memory Type: Solid State Drive (SSD) FLASH - NAND (QLC) Type: NVMe Form Factor: M.2 Module Speed - Read: 4.2GB/s Speed - Write: 1.8GB/s |
товар відсутній |
||||||||
| MTFDKBA512TFK-2BC1AABYY | Micron Technology Inc. |
Description: 2450 512GB M.2 SSD Packaging: Tray |
товар відсутній |
||||||||
| MTFDKBA512QFM-1BD15ABYY | Micron Technology Inc. |
Description: 2400 512GB M.2 SSD Packaging: Box Memory Size: 512GB Memory Type: Solid State Drive (SSD) FLASH - NAND (QLC) Type: NVMe Form Factor: M.2 Module Speed - Read: 4.2GB/s Speed - Write: 1.8GB/s |
товар відсутній |
||||||||
| MTFDKBA512TGE-1BK1AABYY | Micron Technology Inc. |
Description: 2550 512GB M.2 SSD Packaging: Tray |
товар відсутній |
||||||||
| MTFDKBA512TGE-1BK15ABYY | Micron Technology Inc. |
Description: 2550 512GB M.2 SSD Packaging: Tray |
товар відсутній |
||||||||
| MTFDKBA512TFH-1BC15ABVA | Micron Technology Inc. |
Description: 3400 512GB M.2 SSD Packaging: Tray |
товар відсутній |
| MT46V128M8P-75:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| MT46V128M4FN-6:F TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
товар відсутній
| MT46V128M4TG-6T:F TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
товар відсутній
| MT46V128M4FN-75:D TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
товар відсутній
| MT46V128M4TG-75:D TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
товар відсутній
| MT46V128M8TG-75:A TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| MT46V128M8P-6T IT:A |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
| MT46H128M16LFDD-48 IT:C |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
на замовлення 4236 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 839.27 грн |
| 10+ | 748.81 грн |
| 100+ | 640.82 грн |
| MT46H128M16LFDD-48 AIT:C |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT46H128M16LFDD-48 WT:C |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
товар відсутній
| MT53E128M32D2FW-046 WT:A |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Bulk
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Bulk
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
товар відсутній
| MT53E128M32D2FW-046 WT:A TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
товар відсутній
| MT53E128M32D2FW-046 IT:A TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товар відсутній
| MT53E128M32D2FW-046 IT:A |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
товар відсутній
| MT53E128M32D2FW-046 AIT:A TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товар відсутній
| MT53E128M32D2FW-046 AIT:A |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E128M32D2FW-046 AAT:A TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товар відсутній
| MT53E128M32D2FW-046 AAT:A |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E128M32D2FW-046 AUT:A TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E384M32D2FW-046 IT:E TR |
Виробник: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
товар відсутній
| MT53E128M32D2FW-046 AUT:A |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 4G 128MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E384M32D2FW-046 IT:E |
Виробник: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
товар відсутній
| MT53E384M32D2FW-046 AIT:E TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товар відсутній
| MT53E384M32D2FW-046 AIT:E |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
DigiKey Programmable: Not Verified
товар відсутній
| MT53E256M32D2FW-046 AIT:B TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E256M32D2FW-046 AIT:B |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E256M32D2FW-046 AAT:B TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E256M32D2FW-046 AAT:B |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E256M32D2FW-046 AUT:B TR |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E256M32D2FW-046 AUT:B |
|
Виробник: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT53E1G32D2FW-046 WT:C TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Memory Size: 32Gbit
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 32
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Memory Size: 32Gbit
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 32
товар відсутній
| MT53E1G32D2FW-046 WT:C |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Memory Size: 32Gbit
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 32
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Memory Size: 32Gbit
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 32
товар відсутній
| MT53E1G32D2FW-046 IT:C TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Memory Size: 32Gbit
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 32
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Memory Size: 32Gbit
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 32
товар відсутній
| MT53E1G32D2FW-046 IT:C |
Виробник: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Memory Size: 32Gbit
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 32
Description: IC DRAM 32GBIT PAR 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Memory Size: 32Gbit
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Interface: Parallel
Memory Organization: 1G x 32
товар відсутній
| MT48H32M16LFB4-6 AT:C TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MT40A256M16GE-075E AUT:B TR |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 4GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x14)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x14)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
| MTFC8GAMALBH-AIT ES TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
товар відсутній
| MTFC8GAMALNA-AAT |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tray
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tray
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
товар відсутній
| MTFC8GAMALNA-AAT TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
товар відсутній
| MTFC8GAMALBH-AAT ES TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
товар відсутній
| MTFC8GAMALNA-AAT ES TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Grade: Automotive
товар відсутній
| N2M400GDB321A3CF TR |
Виробник: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 52MHZ
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 52 MHz
Memory Format: FLASH
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64GBIT MMC 52MHZ
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND
Clock Frequency: 52 MHz
Memory Format: FLASH
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
товар відсутній
| EDF8164A3MC-GD-F-R TR |
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Tape & Reel (TR)
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Tape & Reel (TR)
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
товар відсутній
| EDF8164A3PK-JD-F-D |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tray
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tray
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
товар відсутній
| EDF8164A3PK-JD-F-R |
|
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tape & Reel (TR)
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PAR 216FBGA
Packaging: Tape & Reel (TR)
Package / Case: 216-WFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 216-FBGA (12x12)
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
товар відсутній
| EDF8164A3MD-GD-F-R |
Виробник: Micron Technology Inc.
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Bulk
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
Description: IC DRAM 8GBIT PARALLEL 800MHZ
Packaging: Bulk
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -30°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Memory Interface: Parallel
Memory Organization: 128M x 64
DigiKey Programmable: Not Verified
товар відсутній
| MTFDKBA256TFK-1BC1AABYY TR |
товар відсутній
| MTFDKBA256TFK-1BC15ABYY TR |
товар відсутній
| MTFDKBA256TFK-2BC1AABYY |
Виробник: Micron Technology Inc.
Description: 2450 256GB M.2 SSD
Packaging: Tray
Memory Size: 256GB
Memory Type: Solid State Drive (SSD) -
Type: NVMe PCIe Gen 4
Form Factor: M.2 Module
Speed - Read: 3.5GB/s
Speed - Write: 1.6GB/s
Description: 2450 256GB M.2 SSD
Packaging: Tray
Memory Size: 256GB
Memory Type: Solid State Drive (SSD) -
Type: NVMe PCIe Gen 4
Form Factor: M.2 Module
Speed - Read: 3.5GB/s
Speed - Write: 1.6GB/s
товар відсутній
| MTFDKBA256TGE-1BL1AABYY |
товар відсутній
| MTFDKBA256TGE-1BL15ABYY |
товар відсутній
| MTFDKBA256TFK-1BC1AABYY |
товар відсутній
| MTFDKBA256TFK-1BC15ABYY |
товар відсутній
| MTFDKBA512QGN-1BN15ABYY |
товар відсутній
| MTFDKBA512QFM-1BD1AABYY |
Виробник: Micron Technology Inc.
Description: 2400 512GB M.2 SSD
Packaging: Box
Memory Size: 512GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (QLC)
Type: NVMe
Form Factor: M.2 Module
Speed - Read: 4.2GB/s
Speed - Write: 1.8GB/s
Description: 2400 512GB M.2 SSD
Packaging: Box
Memory Size: 512GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (QLC)
Type: NVMe
Form Factor: M.2 Module
Speed - Read: 4.2GB/s
Speed - Write: 1.8GB/s
товар відсутній
| MTFDKBA512TFK-2BC1AABYY |
товар відсутній
| MTFDKBA512QFM-1BD15ABYY |
Виробник: Micron Technology Inc.
Description: 2400 512GB M.2 SSD
Packaging: Box
Memory Size: 512GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (QLC)
Type: NVMe
Form Factor: M.2 Module
Speed - Read: 4.2GB/s
Speed - Write: 1.8GB/s
Description: 2400 512GB M.2 SSD
Packaging: Box
Memory Size: 512GB
Memory Type: Solid State Drive (SSD) FLASH - NAND (QLC)
Type: NVMe
Form Factor: M.2 Module
Speed - Read: 4.2GB/s
Speed - Write: 1.8GB/s
товар відсутній
| MTFDKBA512TGE-1BK1AABYY |
товар відсутній
| MTFDKBA512TGE-1BK15ABYY |
товар відсутній
| MTFDKBA512TFH-1BC15ABVA |
товар відсутній