Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354676) > Сторінка 1623 з 5912
Фото | Назва | Виробник | Інформація |
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VC-840-JAE-KAAN-126M488095TR | Microchip Technology |
Description: OSCILLATOR CMOS SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: LVCMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V Current - Supply (Max): 20mA Height - Seated (Max): 0.035" (0.90mm) Part Status: Active Frequency: 126.488095 MHz Base Resonator: Crystal |
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DSC400-1111Q0095KE2 | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 20SMD |
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DSC400-1111Q0095KI2T | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 20SMD |
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DSC400-1111Q0095KE1T | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 20SMD |
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DSC400-1111Q0095KE1 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 20SMD Packaging: Tube Package / Case: 20-VFQFN Exposed Pad Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Output: LVCMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.6V Height: 0.035" (0.90mm) Frequency - Output 1: 25MHz Frequency - Output 2: 24MHz Frequency - Output 3: 24MHz Frequency - Output 4: 25MHz Base Resonator: MEMS |
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DSC400-1111Q0095KI1 | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 20SMD |
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DSC400-1111Q0095KI2 | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 20SMD |
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DSC400-1111Q0095KI1T | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 20SMD |
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DSC400-1111Q0095KE2T | Microchip Technology | Description: MEMS OSC XO 2.25V-3.6V 20SMD |
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JANTX1N6075 | Microchip Technology |
Description: DIODE GEN PURP 150V 850MA A-PAK Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 850mA Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/503 |
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JAN1N6075 | Microchip Technology |
Description: DIODE GEN PURP 150V 3A A-PAK Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/503 |
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1N6075 | Microchip Technology | Description: DIODE GEN PURP 150V 850MA AXIAL |
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1N5554 | Microchip Technology |
Description: DIODE GEN PURP 1KV 3A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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1N5550 | Microchip Technology |
Description: DIODE GEN PURP 200V 3A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 357 шт: термін постачання 21-31 дні (днів) |
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1N5553 | Microchip Technology |
Description: DIODE GEN PURP 800V 3A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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SY100EP16UMG-TR | Microchip Technology |
Description: IC LN RCVR DIFF 2.5V/3.3V 8-MLF Packaging: Bulk Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Mounting Type: Surface Mount Logic Type: Differential Receiver/Driver Operating Temperature: -40°C ~ 85°C Supply Voltage: 2.375V ~ 3.6V Supplier Device Package: 8-MLF® (2x2) |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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JAN1N5303-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.76MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Grade: Military Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.76mA Voltage - Limiting (Max): 1.65V Qualification: MIL-PRF-19500/463 |
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JANTX1N5303UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.76MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Grade: Military Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.76mA Voltage - Limiting (Max): 1.65V Qualification: MIL-PRF-19500/463 |
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JANTX1N5303-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.76MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Grade: Military Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.76mA Voltage - Limiting (Max): 1.65V Qualification: MIL-PRF-19500/463 |
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JANTXV1N5303-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.76MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Grade: Military Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.76mA Voltage - Limiting (Max): 1.65V Qualification: MIL-PRF-19500/463 |
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JAN1N5303UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.76MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Grade: Military Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.76mA Voltage - Limiting (Max): 1.65V Qualification: MIL-PRF-19500/463 |
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1N5303-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.76MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.76mA Voltage - Limiting (Max): 1.65V |
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1N5303UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.76MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.76mA Voltage - Limiting (Max): 1.65V |
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1N5303/TR | Microchip Technology |
Description: DIODE CUR REG 100V 1.76MA 475MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Supplier Device Package: DO-7 Power - Max: 475mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 1.76mA Voltage - Limiting (Max): 1.65V |
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JANS1N5303UR-1/TR | Microchip Technology | Description: DIODE DO213AB |
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JANS1N5303-1/TR | Microchip Technology | Description: DIODE DO7 |
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HT-MM900AF-7K-EE-25M0000000 | Microchip Technology |
Description: HIGH TEMP MEMS BASED XO +3.3 VDC Packaging: Tape & Reel (TR) |
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HT-MM900AC-7K-EE-28M8000000 | Microchip Technology |
Description: HIGH TEMP MEMS BASED XO +3.3 VDC Packaging: Tape & Reel (TR) Part Status: Active |
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VTA1-5011-60M0000000 | Microchip Technology |
Description: VTA1-5011-60M0000000 Packaging: Tube Package / Case: 14-DIP, 4 Leads (Full Size) Size / Dimension: 0.728" L x 0.472" W (18.50mm x 12.00mm) Mounting Type: Surface Mount Output: Clipped Sine Wave Function: Enable/Disable Type: TCXO Current - Supply (Max): 20mA Height - Seated (Max): 0.421" (10.70mm) Part Status: Active Frequency: 60 MHz Base Resonator: Crystal |
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VT-820-FFE-1560-40M0000000 | Microchip Technology |
Description: TCXO +3.0 VDC +/-5% CLIPPED SINE Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Height - Seated (Max): 0.039" (1.00mm) Part Status: Active |
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DSC1103CI2-300.0000 | Microchip Technology | Description: MEMS OSC XO 300.0000MHZ LVDS SMD |
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DSC1104CI2-316.0000T | Microchip Technology | Description: MEMS OSC XO 316.0000MHZ HCSL SMD |
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DSC1224CI2-38M40000 | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
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DSC1123CI2-312.5000T | Microchip Technology | Description: MEMS OSC XO 312.5000MHZ LVDS SMD |
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DSC1224CI2-38M40000T | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
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DSC1123CI2-333.3333 | Microchip Technology | Description: MEMS OSC XO 333.3333MHZ LVDS SMD |
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DSC1123CI2-312.5000 | Microchip Technology | Description: MEMS OSC XO 312.5000MHZ LVDS SMD |
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DSC1104CI2-316.0000 | Microchip Technology | Description: MEMS OSC XO 316.0000MHZ HCSL SMD |
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DSC1103CI2-300.0000T | Microchip Technology | Description: MEMS OSC XO 300.0000MHZ LVDS SMD |
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DSC1123CI2-333.3333T | Microchip Technology | Description: MEMS OSC XO 333.3333MHZ LVDS SMD |
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MQ1N5553US | Microchip Technology |
Description: DIODE GP 800V 3A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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JAN1N6345 | Microchip Technology | Description: DIODE ZENER 75V 500MW DO35 |
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ATMEGA16-16AU | Microchip Technology |
Description: IC MCU 8BIT 16KB FLASH 44TQFP Packaging: Tray Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (8K x 16) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 512 x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Part Status: Active Number of I/O: 32 DigiKey Programmable: Verified |
на замовлення 1220 шт: термін постачання 21-31 дні (днів) |
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JANTXV2N6050 | Microchip Technology | Description: POWER BJT |
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GC4723-00 | Microchip Technology | Description: SI LIMITER NON HERMETIC CHIP |
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S4250F | Microchip Technology | Description: RECTIFIER |
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JANTX1N2988B | Microchip Technology | Description: DIODE ZENER 27V 10W DO213AA |
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JAN1N2988B | Microchip Technology | Description: ZENER DIODE |
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JANTXV1N2988RB | Microchip Technology | Description: ZENER DIODE |
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JAN1N2988RB | Microchip Technology | Description: ZENER DIODE |
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JANTXV1N2988B | Microchip Technology | Description: ZENER DIODE |
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JANTX1N2988RB | Microchip Technology | Description: ZENER DIODE |
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PLC-AC-COUPLER | Microchip Technology | Description: PLC AC COUPLER |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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MXSMBG7.5Ae3 | Microchip Technology | Description: TVS DIODE 7.5VWM 12.9VC SMBG |
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JAN1N4969CUS | Microchip Technology |
Description: DIODE ZENER 30V 5W D5B Tolerance: ±2% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V Qualification: MIL-PRF-19500/356 |
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APT75DQ120SG | Microchip Technology | Description: DIODE GEN PURP 75A D3PAK |
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APT75DQ60SG | Microchip Technology |
Description: DIODE GEN PURP 75A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 31 ns Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
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M1.5KE180AE3/TR | Microchip Technology |
Description: TVS 180V 5% 1500W UNI Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.1A Voltage - Reverse Standoff (Typ): 154V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 171V Voltage - Clamping (Max) @ Ipp: 246V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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PIC16LF19155-I/SO | Microchip Technology |
Description: IC MCU 8BIT 14KB FLASH 28SOIC Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 14KB (8K x 14) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 20x12b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT Supplier Device Package: 28-SOIC Number of I/O: 24 DigiKey Programmable: Not Verified |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
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JAN1N4984D | Microchip Technology | Description: DIODE ZENER 120V 5W E AXIAL |
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VC-840-JAE-KAAN-126M488095TR |
Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 20mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 126.488095 MHz
Base Resonator: Crystal
Description: OSCILLATOR CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V
Current - Supply (Max): 20mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 126.488095 MHz
Base Resonator: Crystal
товар відсутній
DSC400-1111Q0095KE2 |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Description: MEMS OSC XO 2.25V-3.6V 20SMD
товар відсутній
DSC400-1111Q0095KI2T |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Description: MEMS OSC XO 2.25V-3.6V 20SMD
товар відсутній
DSC400-1111Q0095KE1T |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Description: MEMS OSC XO 2.25V-3.6V 20SMD
товар відсутній
DSC400-1111Q0095KE1 |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Frequency - Output 1: 25MHz
Frequency - Output 2: 24MHz
Frequency - Output 3: 24MHz
Frequency - Output 4: 25MHz
Base Resonator: MEMS
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Output: LVCMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Height: 0.035" (0.90mm)
Frequency - Output 1: 25MHz
Frequency - Output 2: 24MHz
Frequency - Output 3: 24MHz
Frequency - Output 4: 25MHz
Base Resonator: MEMS
товар відсутній
DSC400-1111Q0095KI1 |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Description: MEMS OSC XO 2.25V-3.6V 20SMD
товар відсутній
DSC400-1111Q0095KI2 |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Description: MEMS OSC XO 2.25V-3.6V 20SMD
товар відсутній
DSC400-1111Q0095KI1T |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Description: MEMS OSC XO 2.25V-3.6V 20SMD
товар відсутній
DSC400-1111Q0095KE2T |
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 20SMD
Description: MEMS OSC XO 2.25V-3.6V 20SMD
товар відсутній
JANTX1N6075 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 850MA A-PAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 850mA
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
Description: DIODE GEN PURP 150V 850MA A-PAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 850mA
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
товар відсутній
JAN1N6075 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A A-PAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
Description: DIODE GEN PURP 150V 3A A-PAK
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/503
товар відсутній
1N5554 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
1N5550 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 357 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 394.51 грн |
100+ | 352.67 грн |
1N5553 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 484.77 грн |
100+ | 434.1 грн |
SY100EP16UMG-TR |
Виробник: Microchip Technology
Description: IC LN RCVR DIFF 2.5V/3.3V 8-MLF
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Logic Type: Differential Receiver/Driver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 2.375V ~ 3.6V
Supplier Device Package: 8-MLF® (2x2)
Description: IC LN RCVR DIFF 2.5V/3.3V 8-MLF
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Logic Type: Differential Receiver/Driver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 2.375V ~ 3.6V
Supplier Device Package: 8-MLF® (2x2)
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
130+ | 167.61 грн |
JAN1N5303-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
товар відсутній
JANTX1N5303UR-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
товар відсутній
JANTX1N5303-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
товар відсутній
JANTXV1N5303-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
товар відсутній
JAN1N5303UR-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
товар відсутній
1N5303-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
товар відсутній
1N5303UR-1/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
товар відсутній
1N5303/TR |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 475MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DO-7
Power - Max: 475mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Description: DIODE CUR REG 100V 1.76MA 475MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DO-7
Power - Max: 475mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
товар відсутній
HT-MM900AF-7K-EE-25M0000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
товар відсутній
HT-MM900AC-7K-EE-28M8000000 |
Виробник: Microchip Technology
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Part Status: Active
Description: HIGH TEMP MEMS BASED XO +3.3 VDC
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
VTA1-5011-60M0000000 |
Виробник: Microchip Technology
Description: VTA1-5011-60M0000000
Packaging: Tube
Package / Case: 14-DIP, 4 Leads (Full Size)
Size / Dimension: 0.728" L x 0.472" W (18.50mm x 12.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Function: Enable/Disable
Type: TCXO
Current - Supply (Max): 20mA
Height - Seated (Max): 0.421" (10.70mm)
Part Status: Active
Frequency: 60 MHz
Base Resonator: Crystal
Description: VTA1-5011-60M0000000
Packaging: Tube
Package / Case: 14-DIP, 4 Leads (Full Size)
Size / Dimension: 0.728" L x 0.472" W (18.50mm x 12.00mm)
Mounting Type: Surface Mount
Output: Clipped Sine Wave
Function: Enable/Disable
Type: TCXO
Current - Supply (Max): 20mA
Height - Seated (Max): 0.421" (10.70mm)
Part Status: Active
Frequency: 60 MHz
Base Resonator: Crystal
товар відсутній
VT-820-FFE-1560-40M0000000 |
Виробник: Microchip Technology
Description: TCXO +3.0 VDC +/-5% CLIPPED SINE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
Description: TCXO +3.0 VDC +/-5% CLIPPED SINE
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Height - Seated (Max): 0.039" (1.00mm)
Part Status: Active
товар відсутній
DSC1103CI2-300.0000 |
Виробник: Microchip Technology
Description: MEMS OSC XO 300.0000MHZ LVDS SMD
Description: MEMS OSC XO 300.0000MHZ LVDS SMD
товар відсутній
DSC1104CI2-316.0000T |
Виробник: Microchip Technology
Description: MEMS OSC XO 316.0000MHZ HCSL SMD
Description: MEMS OSC XO 316.0000MHZ HCSL SMD
товар відсутній
DSC1224CI2-38M40000 |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
DSC1123CI2-312.5000T |
Виробник: Microchip Technology
Description: MEMS OSC XO 312.5000MHZ LVDS SMD
Description: MEMS OSC XO 312.5000MHZ LVDS SMD
товар відсутній
DSC1224CI2-38M40000T |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
DSC1123CI2-333.3333 |
Виробник: Microchip Technology
Description: MEMS OSC XO 333.3333MHZ LVDS SMD
Description: MEMS OSC XO 333.3333MHZ LVDS SMD
товар відсутній
DSC1123CI2-312.5000 |
Виробник: Microchip Technology
Description: MEMS OSC XO 312.5000MHZ LVDS SMD
Description: MEMS OSC XO 312.5000MHZ LVDS SMD
товар відсутній
DSC1104CI2-316.0000 |
Виробник: Microchip Technology
Description: MEMS OSC XO 316.0000MHZ HCSL SMD
Description: MEMS OSC XO 316.0000MHZ HCSL SMD
товар відсутній
DSC1103CI2-300.0000T |
Виробник: Microchip Technology
Description: MEMS OSC XO 300.0000MHZ LVDS SMD
Description: MEMS OSC XO 300.0000MHZ LVDS SMD
товар відсутній
DSC1123CI2-333.3333T |
Виробник: Microchip Technology
Description: MEMS OSC XO 333.3333MHZ LVDS SMD
Description: MEMS OSC XO 333.3333MHZ LVDS SMD
товар відсутній
MQ1N5553US |
Виробник: Microchip Technology
Description: DIODE GP 800V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GP 800V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
ATMEGA16-16AU |
Виробник: Microchip Technology
Description: IC MCU 8BIT 16KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Verified
Description: IC MCU 8BIT 16KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (8K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Part Status: Active
Number of I/O: 32
DigiKey Programmable: Verified
на замовлення 1220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 409.29 грн |
25+ | 362.09 грн |
100+ | 348.29 грн |
PLC-AC-COUPLER |
Виробник: Microchip Technology
Description: PLC AC COUPLER
Description: PLC AC COUPLER
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6510.57 грн |
MXSMBG7.5Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC SMBG
Description: TVS DIODE 7.5VWM 12.9VC SMBG
товар відсутній
JAN1N4969CUS |
Виробник: Microchip Technology
Description: DIODE ZENER 30V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 30V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Qualification: MIL-PRF-19500/356
товар відсутній
APT75DQ60SG |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GEN PURP 75A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 75 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товар відсутній
M1.5KE180AE3/TR |
Виробник: Microchip Technology
Description: TVS 180V 5% 1500W UNI
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS 180V 5% 1500W UNI
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
PIC16LF19155-I/SO |
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 20x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 14KB FLASH 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 20x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 275 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 138.51 грн |
25+ | 122.47 грн |
100+ | 111.4 грн |