Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354676) > Сторінка 1578 з 5912
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MXP4KE12CA | Microchip Technology |
 Description: TVS DIODE 10.2VWM 16.7VC DO204ALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
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MXP4KE170CA | Microchip Technology |
Description: TVS DIODE 145VWM 234VC DO204AL |
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MXP4KE8.2A | Microchip Technology |
Description: TVS DIODE 7.02VWM 12.1VC DO204AL |
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MXP4KE82Ae3 | Microchip Technology |
Description: TVS DIODE 70.1VWM 113VC DO204AL |
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MXP4KE200CAe3 | Microchip Technology |
Description: TVS DIODE 171VWM 274VC DO204AL |
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MNSKCB2N2907A | Microchip Technology |
Description: MNSKCB2N2907A Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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MNS2N2907AUBP | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
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MNS2N2907AUBP/TR | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
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| DSC1202DI3-156M0000T | Microchip Technology | Description: MEMS OSC HP 156MHZ LVPECL -40C-8 |
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| DSC1202DI3-156M0000 | Microchip Technology | Description: MEMS OSC HP 156MHZ LVPECL -40C-8 |
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MXRT100KP90CAe3 | Microchip Technology |
Description: TVS DIODE 90VWM 178VC CASE 5A |
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MCP14A0601-E/MS | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8MSOP Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-MSOP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 166 шт: термін постачання 21-31 дні (днів) |
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MCP14A0601-E/SN | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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MCP14A0601T-E/MS | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-MSOP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
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MCP14A0601T-E/MS | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-MSOP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
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MCP14A0601T-E/SN | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8SOIC |
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MCP14A0601T-E/SN | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8SOIC |
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MCP14A0601T-E/MNY | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8DFN |
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MCP14A0601T-E/MNY | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8DFN |
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93LC66BT-E/OT | Microchip Technology |
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Verified |
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93LC66BT-E/OT | Microchip Technology |
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Verified |
на замовлення 2462 шт: термін постачання 21-31 дні (днів) |
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93LC66AT-E/OT | Microchip Technology |
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Verified |
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93LC66AT-E/OT | Microchip Technology |
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Verified |
на замовлення 2298 шт: термін постачання 21-31 дні (днів) |
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JAN1N3826AUR-1 | Microchip Technology |
Description: DIODE ZENER 5.1V 1W DO213AB Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200 Voltage Coupled to Current - Reverse Leakage @ Vr: 1 Grade: Military Qualification: MIL-PRF-19500/115 |
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| JANS1N6125A | Microchip Technology |
Description: TVS DIODE 47.1VWM 85.3VC AXIAL |
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| MASMCG150CA | Microchip Technology |
Description: TVS DIODE 150VWM 243VC SMCG |
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| MASMCG150A | Microchip Technology |
Description: TVS DIODE 150VWM 243VC SMCG |
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| MASMCG14CAe3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC SMCG |
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| MASMCG150Ae3 | Microchip Technology |
Description: TVS DIODE 150VWM 243VC SMCG |
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| MASMCG14Ae3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC SMCG |
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| MASMCG14CA | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC SMCG |
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| MASMCG13CAe3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC SMCG |
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| MASMCG14A | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC SMCG |
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| MASMCG13CA | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC SMCG |
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| MASMCG150CAe3 | Microchip Technology |
Description: TVS DIODE 150VWM 243VC SMCG |
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| S504100 | Microchip Technology |
Description: DIODE GP 1KV 300A DO205AB DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1000 V |
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| S504140 | Microchip Technology |
Description: DIODE GP 1.4KV 300A DO205AB DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1400 V |
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| S504160 | Microchip Technology |
Description: DIODE GP 1.6KV 300A DO205AB DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1600 V |
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| S504120 | Microchip Technology |
Description: DIODE GP 1.2KV 300A DO205AB DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
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MCP1501T-33E/SN | Microchip Technology |
Description: IC VREF SERIES 0.1% 8SOIC Packaging: Tape & Reel (TR) Tolerance: ±0.1% Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 3.5V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 550µA Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 3.3V Part Status: Active Current - Output: 20 mA |
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MCP1501T-33E/SN | Microchip Technology |
Description: IC VREF SERIES 0.1% 8SOIC Packaging: Cut Tape (CT) Tolerance: ±0.1% Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 3.5V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 550µA Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 3.3V Part Status: Active Current - Output: 20 mA |
на замовлення 1072 шт: термін постачання 21-31 дні (днів) |
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SMAJ33CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 500W Power Line Protection: No |
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SMAJ33CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 500W Power Line Protection: No |
на замовлення 4560 шт: термін постачання 21-31 дні (днів) |
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| DSA6102MI3B-038.4000TVAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
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| DSA6102MI3B-038.4000VAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
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VSC8489YJU-17 | Microchip Technology |
Description: IC TELECOM INTERFACE 196FCBGA |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
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1N4154-1/TR | Microchip Technology |
Description: DIODE GEN PURP 35V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
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1N4154-1E3 | Microchip Technology |
Description: DIODE GEN PURP 35V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
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| JANTXV2N7368 | Microchip Technology |
Description: TRANS NPN 80V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 115 W |
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| JANTXV2N7372 | Microchip Technology |
Description: TRANS PNP 80V 50UA TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 50 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 4 W |
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| JAN2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Grade: Military Qualification: MIL-PRF-19500/623 |
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| JANTX2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Grade: Military Qualification: MIL-PRF-19500/623 |
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| JANS2N7373 | Microchip Technology |
Description: TRANS NPN 80V 50UA TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 50 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 4 W |
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| 2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Grade: Military Qualification: MIL-PRF-19500/623 |
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| MS1N6659R | Microchip Technology | Description: UFR,FRR |
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| MS1N6659 | Microchip Technology | Description: UFR,FRR |
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| MS1N6673 | Microchip Technology | Description: UFR,FRR |
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| MS1N6672 | Microchip Technology |
Description: DIODE ARRAY GP 300V 15A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-254AA Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V |
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| 1N6767 | Microchip Technology | Description: UFR,FRR |
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| MS1N6674R | Microchip Technology | Description: UFR,FRR |
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| MXP4KE12CA |
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Виробник: Microchip Technology
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
| MXP4KE170CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 145VWM 234VC DO204AL
Description: TVS DIODE 145VWM 234VC DO204AL
товар відсутній
| MXP4KE8.2A |
|
Виробник: Microchip Technology
Description: TVS DIODE 7.02VWM 12.1VC DO204AL
Description: TVS DIODE 7.02VWM 12.1VC DO204AL
товар відсутній
| MXP4KE82Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 70.1VWM 113VC DO204AL
Description: TVS DIODE 70.1VWM 113VC DO204AL
товар відсутній
| MXP4KE200CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 171VWM 274VC DO204AL
Description: TVS DIODE 171VWM 274VC DO204AL
товар відсутній
| MNSKCB2N2907A |
Виробник: Microchip Technology
Description: MNSKCB2N2907A
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: MNSKCB2N2907A
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
| MNS2N2907AUBP |
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товар відсутній
| MNS2N2907AUBP/TR |
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товар відсутній
| DSC1202DI3-156M0000T |
Виробник: Microchip Technology
Description: MEMS OSC HP 156MHZ LVPECL -40C-8
Description: MEMS OSC HP 156MHZ LVPECL -40C-8
товар відсутній
| DSC1202DI3-156M0000 |
Виробник: Microchip Technology
Description: MEMS OSC HP 156MHZ LVPECL -40C-8
Description: MEMS OSC HP 156MHZ LVPECL -40C-8
товар відсутній
| MXRT100KP90CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 178VC CASE 5A
Description: TVS DIODE 90VWM 178VC CASE 5A
товар відсутній
| MCP14A0601-E/MS |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 166 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.49 грн |
| 25+ | 89.11 грн |
| 100+ | 80.68 грн |
| MCP14A0601-E/SN |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 226 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.49 грн |
| 25+ | 89.11 грн |
| 100+ | 80.68 грн |
| MCP14A0601T-E/MS |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
товар відсутній
| MCP14A0601T-E/MS |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
товар відсутній
| MCP14A0601T-E/SN |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Description: IC GATE DRVR LOW-SIDE 8SOIC
товар відсутній
| MCP14A0601T-E/SN |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Description: IC GATE DRVR LOW-SIDE 8SOIC
товар відсутній
| MCP14A0601T-E/MNY |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8DFN
Description: IC GATE DRVR LOW-SIDE 8DFN
товар відсутній
| MCP14A0601T-E/MNY |
|
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8DFN
Description: IC GATE DRVR LOW-SIDE 8DFN
товар відсутній
| 93LC66BT-E/OT |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
товар відсутній
| 93LC66BT-E/OT |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
на замовлення 2462 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.35 грн |
| 25+ | 27.36 грн |
| 100+ | 26.63 грн |
| 93LC66AT-E/OT |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
товар відсутній
| 93LC66AT-E/OT |
|
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.35 грн |
| 25+ | 27.36 грн |
| 100+ | 26.63 грн |
| JAN1N3826AUR-1 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Grade: Military
Qualification: MIL-PRF-19500/115
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Grade: Military
Qualification: MIL-PRF-19500/115
товар відсутній
| JANS1N6125A |
|
Виробник: Microchip Technology
Description: TVS DIODE 47.1VWM 85.3VC AXIAL
Description: TVS DIODE 47.1VWM 85.3VC AXIAL
товар відсутній
| MASMCG150CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
Description: TVS DIODE 150VWM 243VC SMCG
товар відсутній
| S504100 |
Виробник: Microchip Technology
Description: DIODE GP 1KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
Description: DIODE GP 1KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
товар відсутній
| S504140 |
Виробник: Microchip Technology
Description: DIODE GP 1.4KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
Description: DIODE GP 1.4KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
товар відсутній
| S504160 |
Виробник: Microchip Technology
Description: DIODE GP 1.6KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1600 V
Description: DIODE GP 1.6KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1600 V
товар відсутній
| S504120 |
Виробник: Microchip Technology
Description: DIODE GP 1.2KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE GP 1.2KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
| MCP1501T-33E/SN |
|
Виробник: Microchip Technology
Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
товар відсутній
| MCP1501T-33E/SN |
|
Виробник: Microchip Technology
Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Cut Tape (CT)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Cut Tape (CT)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
на замовлення 1072 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.36 грн |
| 25+ | 47.12 грн |
| 100+ | 43.07 грн |
| SMAJ33CAE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| SMAJ33CAE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 4560 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.23 грн |
| 100+ | 11.07 грн |
| DSA6102MI3B-038.4000TVAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
| DSA6102MI3B-038.4000VAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
| VSC8489YJU-17 |
|
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 196FCBGA
Description: IC TELECOM INTERFACE 196FCBGA
на замовлення 323 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5207.99 грн |
| 25+ | 4569.86 грн |
| 1N4154-1/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 35V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE GEN PURP 35V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
| 1N4154-1E3 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 35V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE GEN PURP 35V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
| JANTXV2N7368 |
Виробник: Microchip Technology
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
товар відсутній
| JANTXV2N7372 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
товар відсутній
| JAN2N7371 |
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
товар відсутній
| JANTX2N7371 |
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
товар відсутній
| JANS2N7373 |
Виробник: Microchip Technology
Description: TRANS NPN 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
Description: TRANS NPN 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
товар відсутній
| 2N7371 |
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
товар відсутній
| MS1N6672 |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 300V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-254AA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Description: DIODE ARRAY GP 300V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-254AA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
товар відсутній