Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354680) > Сторінка 1518 з 5912
Фото | Назва | Виробник | Інформація |
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SST25VF512-20-4C-SAE-T | Microchip Technology |
Description: IC FLASH 512KBIT SPI 20MHZ 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH Clock Frequency: 20 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 20µs Memory Interface: SPI Memory Organization: 64K x 8 DigiKey Programmable: Verified |
на замовлення 2987 шт: термін постачання 21-31 дні (днів) |
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24CS512-I/P | Microchip Technology | Description: 512K 3.4MHZ I2C SERIAL EEPROM |
на замовлення 74 шт: термін постачання 21-31 дні (днів) |
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24CS512T-E/MS | Microchip Technology | Description: 512K 3.4MHZ I2C SERIAL EEPROM |
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24CS512T-E/MS | Microchip Technology | Description: 512K 3.4MHZ I2C SERIAL EEPROM |
на замовлення 138 шт: термін постачання 21-31 дні (днів) |
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24CS512-E/MS | Microchip Technology | Description: 512K 3.4MHZ I2C SERIAL EEPROM |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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24CS512-I/MS | Microchip Technology | Description: 512K 3.4MHZ I2C SERIAL EEPROM |
на замовлення 484 шт: термін постачання 21-31 дні (днів) |
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DRF1400-CLASS-D | Microchip Technology |
Description: RF MOSFET (VDMOS) PUSH-PULL 13.5 Packaging: Bulk Function: RF Generator Type: Power Management Utilized IC / Part: DRF1400 Supplied Contents: Board(s) Embedded: No Part Status: Active Secondary Attributes: On-Board LEDs |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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JANTXV1N4148-1 | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V Qualification: MIL-PRF-19500/116 |
на замовлення 408 шт: термін постачання 21-31 дні (днів) |
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JAN1N4148-1/TR | Microchip Technology | Description: DIODE GEN PURP 75V 200MA DO213AA |
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CD5333B | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 3 Ohms Supplier Device Package: Die Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 300 µA @ 1 V |
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RN42N-I/RMCOS477 | Microchip Technology |
Description: MODULE Packaging: Bulk Package / Case: 35-SMD Module Sensitivity: -86dBm Mounting Type: Surface Mount Frequency: 2.4GHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Power - Output: 4dBm Data Rate: 3Mbps Protocol: Bluetooth v2.1 + EDR, Class 2 Antenna Type: Antenna Not Included RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
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RN42-I/RMCOS477 | Microchip Technology |
Description: MODULE Packaging: Bulk Package / Case: 35-SMD Module Sensitivity: -86dBm Mounting Type: Surface Mount Frequency: 2.4GHz Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Power - Output: 4dBm Data Rate: 3Mbps Protocol: Bluetooth v2.1 + EDR, Class 2 Antenna Type: PCB Trace RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
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JANS2N3868S | Microchip Technology |
Description: TRANS PNP 60V 0.003A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 3 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
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MXRT100KP85CA/TR | Microchip Technology | Description: TVS DIODE 85VWM 166VC CASE 5A |
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MXLRT100KP48A/TR | Microchip Technology |
Description: TVS DIODE 48VWM 94.3VC CASE 5A Packaging: Tape & Reel (TR) Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 94.3V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
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MRT100KP250A | Microchip Technology |
Description: TVS DIODE 250VWM 493VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 250V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 278V Voltage - Clamping (Max) @ Ipp: 493V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MRT100KP48AE3 | Microchip Technology |
Description: TVS DIODE 48VWM 94.3VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 94.3V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLRT100KP40CA | Microchip Technology |
Description: TVS DIODE 40VWM 78.6VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: Case 5A (DO-204AR) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 78.6V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
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MXRT100KP350Ae3 | Microchip Technology | Description: TVS DIODE 350VWM 690VC CASE 5A |
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MXRT100KP78CA | Microchip Technology | Description: TVS DIODE 78VWM 153VC CASE 5A |
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MXRT100KP220A/TR | Microchip Technology | Description: TVS DIODE 220VWM 434VC CASE 5A |
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MXRT100KP60A/TR | Microchip Technology | Description: TVS DIODE 60VWM 118VC CASE 5A |
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MRT100KP51A | Microchip Technology |
Description: TVS DIODE 51VWM 101VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 101V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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ZL40205LDF1 | Microchip Technology |
Description: IC CLK BUFFER 1:6 750MHZ 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution) Input: CML, HCSL, LVCMOS, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:6 Differential - Input:Output: Yes/Yes Supplier Device Package: 32-QFN (5x5) Part Status: Active Frequency - Max: 750 MHz |
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ZL40205LDF1 | Microchip Technology |
Description: IC CLK BUFFER 1:6 750MHZ 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution) Input: CML, HCSL, LVCMOS, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:6 Differential - Input:Output: Yes/Yes Supplier Device Package: 32-QFN (5x5) Part Status: Active Frequency - Max: 750 MHz |
на замовлення 3981 шт: термін постачання 21-31 дні (днів) |
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MSCDC450A120AG | Microchip Technology | Description: PM-DIODE-SIC-SBD-SP6C |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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MSCDC450A70AG | Microchip Technology | Description: PM-DIODE-SIC-SBD-SP6C |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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DSC6111HI1B-013.5600T | Microchip Technology | Description: MEMS CMOS OSC SMD |
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CDLL4962 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Part Status: Active |
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BZV55C11/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5.45% Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-213AA Part Status: Active Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
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MSMLJ60A | Microchip Technology |
Description: TVS DIODE 60VWM 96.8VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 96.8V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MA5KP24Ae3 | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 128A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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MA5KP22CA | Microchip Technology |
Description: TVS DIODE 22VWM 35.5VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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MA5KP22CAe3 | Microchip Technology |
Description: TVS DIODE 22VWM 35.5VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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MA5KP26CA | Microchip Technology |
Description: TVS DIODE 26VWM 42.1VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 119A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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MA5KP24A | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 128A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500 |
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JANKCBM2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANSF2N2221AUBC/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANKCBD2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANSL2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
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JANSM2N2221AUA/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
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JANSP2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
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JANS2N2221UB | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: UB Voltage - Collector Emitter Breakdown (Max): 30 V |
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JANSD2N2221AUB/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANS2N2221UA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) |
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JANSP2N2221AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANSR2N2221AUB/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANTXV2N2221AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANSD2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
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JANSF2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANTXV2N2221AUA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
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JANS2N2221AUB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
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JANSF2N2221AUBC | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSG2N2221AUBC/TR | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSF2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
товар відсутній |
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JANSR2N2221A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
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JANSP2N2221AUBC | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товар відсутній |
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JANSR2N2221AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
товар відсутній |
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JANSR2N2221AUA/TR | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
товар відсутній |
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JANSL2N2221AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товар відсутній |
SST25VF512-20-4C-SAE-T |
Виробник: Microchip Technology
Description: IC FLASH 512KBIT SPI 20MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 20 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
Description: IC FLASH 512KBIT SPI 20MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 20 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Verified
на замовлення 2987 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.13 грн |
25+ | 48.41 грн |
100+ | 46.25 грн |
24CS512-I/P |
Виробник: Microchip Technology
Description: 512K 3.4MHZ I2C SERIAL EEPROM
Description: 512K 3.4MHZ I2C SERIAL EEPROM
на замовлення 74 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 108.94 грн |
25+ | 104.36 грн |
24CS512T-E/MS |
Виробник: Microchip Technology
Description: 512K 3.4MHZ I2C SERIAL EEPROM
Description: 512K 3.4MHZ I2C SERIAL EEPROM
товар відсутній
24CS512T-E/MS |
Виробник: Microchip Technology
Description: 512K 3.4MHZ I2C SERIAL EEPROM
Description: 512K 3.4MHZ I2C SERIAL EEPROM
на замовлення 138 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 101.16 грн |
25+ | 96.45 грн |
24CS512-E/MS |
Виробник: Microchip Technology
Description: 512K 3.4MHZ I2C SERIAL EEPROM
Description: 512K 3.4MHZ I2C SERIAL EEPROM
на замовлення 75 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 104.27 грн |
25+ | 99.51 грн |
24CS512-I/MS |
Виробник: Microchip Technology
Description: 512K 3.4MHZ I2C SERIAL EEPROM
Description: 512K 3.4MHZ I2C SERIAL EEPROM
на замовлення 484 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 97.27 грн |
25+ | 93 грн |
DRF1400-CLASS-D |
Виробник: Microchip Technology
Description: RF MOSFET (VDMOS) PUSH-PULL 13.5
Packaging: Bulk
Function: RF Generator
Type: Power Management
Utilized IC / Part: DRF1400
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Secondary Attributes: On-Board LEDs
Description: RF MOSFET (VDMOS) PUSH-PULL 13.5
Packaging: Bulk
Function: RF Generator
Type: Power Management
Utilized IC / Part: DRF1400
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Secondary Attributes: On-Board LEDs
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 345266.52 грн |
JANTXV1N4148-1 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
на замовлення 408 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 87.93 грн |
100+ | 78.74 грн |
JAN1N4148-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Description: DIODE GEN PURP 75V 200MA DO213AA
товар відсутній
CD5333B |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: Die
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 1 V
товар відсутній
RN42N-I/RMCOS477 |
Виробник: Microchip Technology
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
RN42-I/RMCOS477 |
Виробник: Microchip Technology
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: PCB Trace
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: MODULE
Packaging: Bulk
Package / Case: 35-SMD Module
Sensitivity: -86dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 4dBm
Data Rate: 3Mbps
Protocol: Bluetooth v2.1 + EDR, Class 2
Antenna Type: PCB Trace
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
JANS2N3868S |
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 0.003A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
MXRT100KP85CA/TR |
Виробник: Microchip Technology
Description: TVS DIODE 85VWM 166VC CASE 5A
Description: TVS DIODE 85VWM 166VC CASE 5A
товар відсутній
MXLRT100KP48A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MRT100KP250A |
Виробник: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MRT100KP48AE3 |
Виробник: Microchip Technology
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 48VWM 94.3VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 94.3V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXLRT100KP40CA |
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 78.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 78.6V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 40VWM 78.6VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 78.6V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXRT100KP350Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 350VWM 690VC CASE 5A
Description: TVS DIODE 350VWM 690VC CASE 5A
товар відсутній
MXRT100KP78CA |
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 153VC CASE 5A
Description: TVS DIODE 78VWM 153VC CASE 5A
товар відсутній
MXRT100KP220A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
Description: TVS DIODE 220VWM 434VC CASE 5A
товар відсутній
MXRT100KP60A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 118VC CASE 5A
Description: TVS DIODE 60VWM 118VC CASE 5A
товар відсутній
MRT100KP51A |
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 101VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 101V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 51VWM 101VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 101V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
ZL40205LDF1 |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
товар відсутній
ZL40205LDF1 |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
Description: IC CLK BUFFER 1:6 750MHZ 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: CML, HCSL, LVCMOS, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Frequency - Max: 750 MHz
на замовлення 3981 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 406.96 грн |
25+ | 327.21 грн |
100+ | 316.48 грн |
MSCDC450A120AG |
Виробник: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 40277.31 грн |
MSCDC450A70AG |
Виробник: Microchip Technology
Description: PM-DIODE-SIC-SBD-SP6C
Description: PM-DIODE-SIC-SBD-SP6C
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 29692.47 грн |
CDLL4962 |
товар відсутній
BZV55C11/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5.45%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5.45%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
MSMLJ60A |
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 60VWM 96.8VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MA5KP24Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MA5KP22CA |
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MA5KP22CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MA5KP26CA |
Виробник: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 26VWM 42.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 119A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MA5KP24A |
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 24VWM 38.9VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 128A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
JANKCBM2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANSF2N2221AUBC/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANKCBD2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANSL2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товар відсутній
JANSM2N2221AUA/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товар відсутній
JANSP2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товар відсутній
JANS2N2221UB |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 30 V
товар відсутній
JANSD2N2221AUB/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANS2N2221UA/TR |
товар відсутній
JANSP2N2221AUB |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANSR2N2221AUB/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANTXV2N2221AUB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANSD2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товар відсутній
JANSF2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANTXV2N2221AUA/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товар відсутній
JANS2N2221AUB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
товар відсутній
JANSF2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товар відсутній
JANSR2N2221A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANSP2N2221AUBC |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній
JANSR2N2221AUA |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товар відсутній
JANSR2N2221AUA/TR |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
товар відсутній
JANSL2N2221AUB |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
товар відсутній