Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139419) > Сторінка 538 з 2324
Фото | Назва | Виробник | Інформація |
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FM28V102A-TG | Infineon Technologies |
Description: IC FRAM 1MBIT PARALLEL 44TSOP II Packaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 90ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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FM28V020-T28GTR | Infineon Technologies |
Description: IC FRAM 256KBIT PAR 28TSOP I Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 28-TSOP I Write Cycle Time - Word, Page: 140ns Memory Interface: Parallel Access Time: 140 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
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CY7C1019D-10VXI | Infineon Technologies | Description: IC SRAM 1MBIT PARALLEL 32SOJ |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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CY7C1019DV33-10VXI | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJ Packaging: Tube Package / Case: 32-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 2029 шт: термін постачання 21-31 дні (днів) |
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S29GL512S11TFIV10 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOP Packaging: Bulk Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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CY91F523JSEPMC-GTE1 | Infineon Technologies |
Description: IC MCU 32BIT 448KB FLASH 120LQFP Packaging: Tray Package / Case: 120-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 448KB (448K x 8) RAM Size: 56K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 42x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 120-LQFP (16x16) Number of I/O: 96 DigiKey Programmable: Not Verified |
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IRLR2705TRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 28A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
на замовлення 7589 шт: термін постачання 21-31 дні (днів) |
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IRLR2705TRPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 28A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
на замовлення 7589 шт: термін постачання 21-31 дні (днів) |
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CY8C29666-24LTXI | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48QFN Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 12x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Part Status: Active Number of I/O: 44 DigiKey Programmable: Not Verified |
на замовлення 974 шт: термін постачання 21-31 дні (днів) |
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BSP76E6327HUSA1 | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4 Packaging: Tape & Reel (TR) Features: Auto Restart Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete |
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CY8CMBR3116-LQXIT | Infineon Technologies |
Description: IC CAP SENSE 24QFN Packaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Supply: 140mA Number of Inputs: Up to 16 Supplier Device Package: 24-QFN (4x4) Proximity Detection: Yes LED Driver Channels: Up to 8 Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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CY8CMBR3116-LQXIT | Infineon Technologies |
Description: IC CAP SENSE 24QFN Packaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Type: Buttons Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Current - Supply: 140mA Number of Inputs: Up to 16 Supplier Device Package: 24-QFN (4x4) Proximity Detection: Yes LED Driver Channels: Up to 8 Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5640 шт: термін постачання 21-31 дні (днів) |
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MB95F013KPMC-G-SNE2 | Infineon Technologies | Description: IC MCU 32LQFP |
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IAUC100N10S5L040ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A 8TDSON-34 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V |
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IAUC100N10S5L040ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A 8TDSON-34 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V |
на замовлення 3895 шт: термін постачання 21-31 дні (днів) |
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IPB80N06S2LH5ATMA3 | Infineon Technologies | Description: MOSFET |
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BGS 12AL7-6 E6433 | Infineon Technologies | Description: IC RF SWITCH SPDT 3GHZ TSLP7-6 |
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BGS12AL76E6327XTMA1 | Infineon Technologies | Description: IC RF SWITCH SPDT 3GHZ TSLP7-6 |
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BGS12AL76E6327XTMA1 | Infineon Technologies | Description: IC RF SWITCH SPDT 3GHZ TSLP7-6 |
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BGS 12A TR E6327 | Infineon Technologies | Description: IC RF SWITCH SPDT 3GHZ FWLP-6 |
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BGS12AL74E6327XTSA1 | Infineon Technologies | Description: IC RF SWITCH SPDT 3GHZ TSLP7-4 |
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BGS12AL74E6327XTSA1 | Infineon Technologies | Description: IC RF SWITCH SPDT 3GHZ TSLP7-4 |
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CY8C624ALQI-S2D42 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 68QFN Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Active Number of I/O: 53 DigiKey Programmable: Not Verified |
на замовлення 520 шт: термін постачання 21-31 дні (днів) |
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NAC1080XTMA2 | Infineon Technologies |
Description: CONTACTLESS POWER&SENSOR Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, SPI, UART Type: RFID Reader/Transponder Standards: ISO 14443A Supplier Device Package: PG-DSO-16-45 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NAC1080XTMA2 | Infineon Technologies |
Description: CONTACTLESS POWER&SENSOR Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Interface: I2C, SPI, UART Type: RFID Reader/Transponder Standards: ISO 14443A Supplier Device Package: PG-DSO-16-45 |
на замовлення 7110 шт: термін постачання 21-31 дні (днів) |
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DEVKITNAC1080TOBO1 | Infineon Technologies |
Description: DEV KIT Packaging: Bulk For Use With/Related Products: NAC1080 Frequency: 13.56MHz Type: Near Field Communication (NFC) Supplied Contents: Board(s) Part Status: Active |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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IRF3007STRLPBF | Infineon Technologies |
Description: MOSFET N CH 75V 62A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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IRF3007STRLPBF | Infineon Technologies |
Description: MOSFET N CH 75V 62A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V |
на замовлення 3395 шт: термін постачання 21-31 дні (днів) |
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CY9AF141MBBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
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CY9AF142LAQN-G-AVE2 | Infineon Technologies | Description: IC MCU 32BIT 160KB FLASH 64QFN |
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CY9AF141MBPMC1-G-JNE2 | Infineon Technologies | Description: IC MCU 32BIT 64KB FLASH 80LQFP |
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CY9AF141MABGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 96KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Number of I/O: 66 DigiKey Programmable: Not Verified |
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CY9AF141NABGL-GK9E1 | Infineon Technologies | Description: MM MCU |
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CY95F562KNPFT-G-UNE2 | Infineon Technologies | Description: IC MCU 8BIT 8KB FLASH 20TSSOP |
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CY9AF141NBBGL-GK9E1 | Infineon Technologies | Description: IC MCU 32BIT 64KB FLASH 112BGA |
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FF600R17KE3B2S1NOSA1 | Infineon Technologies |
Description: FF600R17 - INSULATED GATE BIPOLA Packaging: Bulk Part Status: Active |
на замовлення 116 шт: термін постачання 21-31 дні (днів) |
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FF600R12IE4VBOSA1 | Infineon Technologies |
Description: PP, IHM I, XHP 1,7KV Packaging: Bulk Part Status: Active Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3.35 kW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V |
на замовлення 56 шт: термін постачання 21-31 дні (днів) |
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FF600R12IE4PNOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A 3350W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3350 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
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FF600R12KE3NOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 600A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 850 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2800 W Current - Collector Cutoff (Max): 5 mA |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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FF600R12IP4VBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A 3350W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3350 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
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CY8C3666AXI-052 | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Part Status: Active Number of I/O: 62 DigiKey Programmable: Not Verified |
на замовлення 1206 шт: термін постачання 21-31 дні (днів) |
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CY8C3665AXI-198 | Infineon Technologies | Description: IC MCU 8BIT 32KB FLASH 100TQFP |
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CY8C3665PVI-008 | Infineon Technologies | Description: IC MCU 8BIT 32KB FLASH 48SSOP |
на замовлення 589 шт: термін постачання 21-31 дні (днів) |
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CY8C3665PVI-008 | Infineon Technologies | Description: IC MCU 8BIT 32KB FLASH 48SSOP |
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CY8C3665LTI-199 | Infineon Technologies | Description: IC MCU 8BIT 32KB FLASH 68QFN |
на замовлення 4953 шт: термін постачання 21-31 дні (днів) |
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CY8C3666AXI-202 | Infineon Technologies | Description: IC MCU 8BIT 64KB FLASH 100TQFP |
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CY8C3665PVI-080 | Infineon Technologies | Description: IC MCU 8BIT 32KB FLASH 48SSOP |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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CY8C3646AXE-178 | Infineon Technologies | Description: IC MCU 8BIT 64KB FLASH 100TQFP |
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S6AE103A0DGN1B200 | Infineon Technologies |
Description: IC PMIC ENERGY HARVESTING 24QFN Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Applications: Energy Harvesting Supplier Device Package: 24-QFN (4x4) Part Status: Obsolete |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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S6AE103A0DGN1B200 | Infineon Technologies |
Description: IC PMIC ENERGY HARVESTING 24QFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Applications: Energy Harvesting Supplier Device Package: 24-QFN (4x4) Part Status: Obsolete |
на замовлення 394 шт: термін постачання 21-31 дні (днів) |
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CY15V108QN-50BKXI | Infineon Technologies | Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA |
товар відсутній |
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IPTC039N15NM5ATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFET Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 243µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V |
товар відсутній |
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IPTC039N15NM5ATMA1 | Infineon Technologies |
Description: OPTIMOS 5 POWER MOSFET Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 243µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V |
на замовлення 1192 шт: термін постачання 21-31 дні (днів) |
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IRF8915TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 20V 8.9A 8SO Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
на замовлення 14211 шт: термін постачання 21-31 дні (днів) |
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D901S45T | Infineon Technologies | Description: DIODE GEN PURP 4.5KV 1225A |
товар відсутній |
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IKW50N120CH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 86A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 116 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-U06 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/319ns Switching Energy: 2.33mJ (on), 1.12mJ (off) Gate Charge: 375 nC Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 398 W |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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CY62137FV30LL-45BVXIT | Infineon Technologies |
Description: IC SRAM 2MBIT PARALLEL 48VFBGA Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CY62137FV30LL-45BVXIT | Infineon Technologies |
Description: IC SRAM 2MBIT PARALLEL 48VFBGA Packaging: Cut Tape (CT) Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
на замовлення 2417 шт: термін постачання 21-31 дні (днів) |
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CYBT-253059-EVAL | Infineon Technologies |
Description: AIROC CYBT-253059-EVAL KIT Packaging: Tray For Use With/Related Products: CYBT-253059-02 Frequency: 2.4GHz Type: Transceiver; Bluetooth® 5 Supplied Contents: Board(s), Accessories Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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CYBT-253059-02 | Infineon Technologies |
Description: RF TXRX MODULE BT CHIP SMD Packaging: Tape & Reel (TR) Package / Case: 35-SMD Module Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 176kB RAM Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.6V ~ 3.3V Power - Output: 10.5dBm Data Rate: 3Mbps Protocol: Bluetooth v5.0 Current - Receiving: 5.9mA Current - Transmitting: 22mA Antenna Type: Integrated, Chip Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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FM28V102A-TG |
Виробник: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 125 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1342.27 грн |
10+ | 1203.38 грн |
25+ | 1190.53 грн |
40+ | 1089.67 грн |
FM28V020-T28GTR |
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товар відсутній
CY7C1019D-10VXI |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Description: IC SRAM 1MBIT PARALLEL 32SOJ
на замовлення 34 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 475.43 грн |
10+ | 417.59 грн |
25+ | 409.54 грн |
CY7C1019DV33-10VXI |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2029 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 350.93 грн |
23+ | 307.22 грн |
46+ | 298.92 грн |
115+ | 251.54 грн |
253+ | 250.62 грн |
506+ | 241.46 грн |
1012+ | 225.79 грн |
S29GL512S11TFIV10 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 330 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
41+ | 532.6 грн |
CY91F523JSEPMC-GTE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 448KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 42x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 448KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 448KB (448K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 42x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
товар відсутній
IRLR2705TRPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
на замовлення 7589 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 21.49 грн |
4000+ | 19.06 грн |
6000+ | 18.22 грн |
IRLR2705TRPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 55V 28A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
на замовлення 7589 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.92 грн |
10+ | 48.85 грн |
100+ | 32.15 грн |
500+ | 23.43 грн |
1000+ | 21.26 грн |
CY8C29666-24LTXI |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 974 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1174.19 грн |
10+ | 1039.66 грн |
25+ | 996.55 грн |
80+ | 824.01 грн |
260+ | 783.57 грн |
520+ | 733.02 грн |
BSP76E6327HUSA1 |
Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRVR N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товар відсутній
CY8CMBR3116-LQXIT |
Виробник: Infineon Technologies
Description: IC CAP SENSE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CAP SENSE 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 115.11 грн |
5000+ | 108.23 грн |
CY8CMBR3116-LQXIT |
Виробник: Infineon Technologies
Description: IC CAP SENSE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC CAP SENSE 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 16
Supplier Device Package: 24-QFN (4x4)
Proximity Detection: Yes
LED Driver Channels: Up to 8
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5640 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 237.33 грн |
10+ | 165.6 грн |
25+ | 149.86 грн |
100+ | 124.39 грн |
250+ | 116.63 грн |
500+ | 111.95 грн |
1000+ | 106.32 грн |
IAUC100N10S5L040ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
товар відсутній
IAUC100N10S5L040ATMA1 |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
Description: MOSFET N-CH 100V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
на замовлення 3895 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 234.22 грн |
10+ | 147.09 грн |
100+ | 102.42 грн |
500+ | 78.19 грн |
1000+ | 72.42 грн |
2000+ | 69.43 грн |
BGS 12AL7-6 E6433 |
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
товар відсутній
BGS12AL76E6327XTMA1 |
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
товар відсутній
BGS12AL76E6327XTMA1 |
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
Description: IC RF SWITCH SPDT 3GHZ TSLP7-6
товар відсутній
BGS 12A TR E6327 |
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ FWLP-6
Description: IC RF SWITCH SPDT 3GHZ FWLP-6
товар відсутній
BGS12AL74E6327XTSA1 |
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
товар відсутній
BGS12AL74E6327XTSA1 |
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
Description: IC RF SWITCH SPDT 3GHZ TSLP7-4
товар відсутній
CY8C624ALQI-S2D42 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
на замовлення 520 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1006.12 грн |
10+ | 738.89 грн |
25+ | 681.39 грн |
80+ | 588.21 грн |
260+ | 550.8 грн |
520+ | 533.93 грн |
NAC1080XTMA2 |
Виробник: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 123.09 грн |
5000+ | 114.07 грн |
NAC1080XTMA2 |
Виробник: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
Description: CONTACTLESS POWER&SENSOR
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART
Type: RFID Reader/Transponder
Standards: ISO 14443A
Supplier Device Package: PG-DSO-16-45
на замовлення 7110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 245.89 грн |
10+ | 212.13 грн |
25+ | 200.51 грн |
100+ | 163.09 грн |
250+ | 154.73 грн |
500+ | 138.84 грн |
1000+ | 115.17 грн |
DEVKITNAC1080TOBO1 |
Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: NAC1080
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Active
Description: DEV KIT
Packaging: Bulk
For Use With/Related Products: NAC1080
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 6913.64 грн |
IRF3007STRLPBF |
Виробник: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 74.83 грн |
1600+ | 67.18 грн |
IRF3007STRLPBF |
Виробник: Infineon Technologies
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Description: MOSFET N CH 75V 62A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
на замовлення 3395 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 216.32 грн |
10+ | 135.17 грн |
100+ | 93.77 грн |
CY9AF141MBBGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
товар відсутній
CY9AF142LAQN-G-AVE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64QFN
Description: IC MCU 32BIT 160KB FLASH 64QFN
товар відсутній
CY9AF141MBPMC1-G-JNE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 80LQFP
Description: IC MCU 32BIT 64KB FLASH 80LQFP
товар відсутній
CY9AF141MABGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Number of I/O: 66
DigiKey Programmable: Not Verified
товар відсутній
CY95F562KNPFT-G-UNE2 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20TSSOP
Description: IC MCU 8BIT 8KB FLASH 20TSSOP
товар відсутній
CY9AF141NBBGL-GK9E1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 112BGA
Description: IC MCU 32BIT 64KB FLASH 112BGA
товар відсутній
FF600R17KE3B2S1NOSA1 |
Виробник: Infineon Technologies
Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
Description: FF600R17 - INSULATED GATE BIPOLA
Packaging: Bulk
Part Status: Active
на замовлення 116 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 50070.01 грн |
FF600R12IE4VBOSA1 |
Виробник: Infineon Technologies
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3.35 kW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3.35 kW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
на замовлення 56 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 33934.03 грн |
FF600R12IE4PNOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товар відсутній
FF600R12KE3NOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
Description: IGBT MODULE 1200V 600A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
на замовлення 28 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 52494.65 грн |
FF600R12IP4VBOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товар відсутній
CY8C3666AXI-052 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 1206 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1088.6 грн |
10+ | 757.62 грн |
25+ | 682.95 грн |
80+ | 590.55 грн |
CY8C3665AXI-198 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Description: IC MCU 8BIT 32KB FLASH 100TQFP
товар відсутній
CY8C3665PVI-008 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Description: IC MCU 8BIT 32KB FLASH 48SSOP
на замовлення 589 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
37+ | 601.97 грн |
CY8C3665PVI-008 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Description: IC MCU 8BIT 32KB FLASH 48SSOP
товар відсутній
CY8C3665LTI-199 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Description: IC MCU 8BIT 32KB FLASH 68QFN
на замовлення 4953 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 592.45 грн |
CY8C3666AXI-202 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Description: IC MCU 8BIT 64KB FLASH 100TQFP
товар відсутній
CY8C3665PVI-080 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Description: IC MCU 8BIT 32KB FLASH 48SSOP
на замовлення 60 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
30+ | 753.77 грн |
CY8C3646AXE-178 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Description: IC MCU 8BIT 64KB FLASH 100TQFP
товар відсутній
S6AE103A0DGN1B200 |
Виробник: Infineon Technologies
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
на замовлення 200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
200+ | 594.33 грн |
S6AE103A0DGN1B200 |
Виробник: Infineon Technologies
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
Description: IC PMIC ENERGY HARVESTING 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Applications: Energy Harvesting
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
на замовлення 394 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 794.47 грн |
10+ | 691.23 грн |
25+ | 659.15 грн |
100+ | 537.09 грн |
CY15V108QN-50BKXI |
Виробник: Infineon Technologies
Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA
Description: IC FRAM 8MBIT SPI 50MHZ 24FBGA
товар відсутній
IPTC039N15NM5ATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
товар відсутній
IPTC039N15NM5ATMA1 |
Виробник: Infineon Technologies
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
Description: OPTIMOS 5 POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 243µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V
на замовлення 1192 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 599.16 грн |
10+ | 394.36 грн |
100+ | 291.03 грн |
500+ | 247.98 грн |
IRF8915TRPBF |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 8.9A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 8.9A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
на замовлення 14211 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
830+ | 25.16 грн |
IKW50N120CH7XKSA1 |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 86A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/319ns
Switching Energy: 2.33mJ (on), 1.12mJ (off)
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 398 W
Description: IGBT TRENCH FS 1200V 86A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-U06
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/319ns
Switching Energy: 2.33mJ (on), 1.12mJ (off)
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 398 W
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 600.71 грн |
30+ | 461.72 грн |
120+ | 413.12 грн |
CY62137FV30LL-45BVXIT |
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2000+ | 201.68 грн |
CY62137FV30LL-45BVXIT |
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
на замовлення 2417 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 281.68 грн |
10+ | 246.6 грн |
25+ | 241.19 грн |
50+ | 225.13 грн |
100+ | 201.86 грн |
250+ | 201.12 грн |
500+ | 190.6 грн |
1000+ | 181.2 грн |
CYBT-253059-EVAL |
Виробник: Infineon Technologies
Description: AIROC CYBT-253059-EVAL KIT
Packaging: Tray
For Use With/Related Products: CYBT-253059-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s), Accessories
Part Status: Active
Description: AIROC CYBT-253059-EVAL KIT
Packaging: Tray
For Use With/Related Products: CYBT-253059-02
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® 5
Supplied Contents: Board(s), Accessories
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 3647.85 грн |
CYBT-253059-02 |
Виробник: Infineon Technologies
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MODULE BT CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Power - Output: 10.5dBm
Data Rate: 3Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 22mA
Antenna Type: Integrated, Chip
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
500+ | 683.12 грн |