Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (137772) > Сторінка 508 з 2297
Фото | Назва | Виробник | Інформація |
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S27KS0643GABHV020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
на замовлення 149 шт: термін постачання 21-31 дні (днів) |
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S80KS2564GACHV040 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 49-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 49-FBGA (8x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 255 шт: термін постачання 21-31 дні (днів) |
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S80KS2564GACHI040 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 49-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 49-FBGA (8x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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S80KS5122GABHM020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 406 шт: термін постачання 21-31 дні (днів) |
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S80KS2563GABHI020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: SPI - Octal I/O Access Time: 35 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 306 шт: термін постачання 21-31 дні (днів) |
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CY14V101QS-SF108XI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Clock Frequency: 108 MHz Memory Format: NVSRAM Supplier Device Package: 16-SOIC Memory Interface: SPI Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 454 шт: термін постачання 21-31 дні (днів) |
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CY14B101PA-SFXI | Infineon Technologies |
![]() Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Clock Frequency: 40 MHz Memory Format: NVSRAM Supplier Device Package: 16-SOIC Memory Interface: SPI Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 1772 шт: термін постачання 21-31 дні (днів) |
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CY14MB064Q2A-SXQ | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Clock Frequency: 40 MHz Memory Format: NVSRAM Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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CY14B101Q2-LHXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Clock Frequency: 40 MHz Memory Format: NVSRAM Supplier Device Package: 8-DFN (5x6) Memory Interface: SPI Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
на замовлення 2137 шт: термін постачання 21-31 дні (днів) |
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S25FL032P0XNFB000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Grade: Automotive Part Status: Obsolete Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 944 шт: термін постачання 21-31 дні (днів) |
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S25FL032P0XMFI003 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified |
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S25FL032P0XMFI000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 5µs, 3ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified |
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S25FL116K0XMFI043 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified |
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S25FL116K0XMFI043 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified |
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S25FL116K0XMFI010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified |
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S25FL116K0XNFA010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
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S25FL116K0XBHI020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
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S25FL116K0XNFA013 | Infineon Technologies |
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S25FL116K0XNFA013 | Infineon Technologies |
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S25FL127SABNFI100 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 978 шт: термін постачання 21-31 дні (днів) |
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S25FL127SABMFV101 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 4419 шт: термін постачання 21-31 дні (днів) |
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S25FL127SABNFI101 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 4017 шт: термін постачання 21-31 дні (днів) |
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S25FL127SABBHID00 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (6x8) Part Status: Obsolete Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 64011 шт: термін постачання 21-31 дні (днів) |
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S25FL127SABBHIC00 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Obsolete Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 51029 шт: термін постачання 21-31 дні (днів) |
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S25FL127SABBHIC00 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Obsolete Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
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S25FL127SABBHIT00 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Obsolete Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 172 шт: термін постачання 21-31 дні (днів) |
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S25FL127SABBHIT00 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Part Status: Obsolete Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
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MB39C007WQN-G-JN-ERE1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-WFQFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 2 Function: Step-Down Current - Output: 800mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 24-QFN (4x4) Synchronous Rectifier: Yes Voltage - Output (Max): 3.86V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 0.446V Part Status: Obsolete |
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S29GL256S90TFI010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 527 шт: термін постачання 21-31 дні (днів) |
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S29GL256S90DHI010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 2570 шт: термін постачання 21-31 дні (днів) |
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S29GL256S90FHI020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
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S29GL256S90DHI020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 685 шт: термін постачання 21-31 дні (днів) |
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S29GL256S90FHI010 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Verified |
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S29GL256S90TFI020 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
на замовлення 797 шт: термін постачання 21-31 дні (днів) |
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S29GL256S90FHI023 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
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IPD40DP06NMATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 4V @ 166µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V |
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IPD40DP06NMATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V Power Dissipation (Max): 19W (Tc) Vgs(th) (Max) @ Id: 4V @ 166µA Supplier Device Package: PG-TO252-3-313 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V |
на замовлення 2312 шт: термін постачання 21-31 дні (днів) |
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IPD052N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 84µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V |
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IPD130N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 30µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
на замовлення 1967 шт: термін постачання 21-31 дні (днів) |
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IPT022N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-HSOF-8-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IPT022N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-HSOF-8-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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IPT017N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 216µA Supplier Device Package: PG-HSOF-8-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V |
товар відсутній |
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IPT017N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 216µA Supplier Device Package: PG-HSOF-8-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V |
на замовлення 1249 шт: термін постачання 21-31 дні (днів) |
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IPF024N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 227A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V |
товар відсутній |
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IPF024N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 227A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V |
на замовлення 774 шт: термін постачання 21-31 дні (днів) |
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IPB026N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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IPB026N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 162A (Tc) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 169µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V |
на замовлення 1224 шт: термін постачання 21-31 дні (днів) |
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IPF016N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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IPF016N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 267µA Supplier Device Package: PG-TO263-7-14 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
на замовлення 1064 шт: термін постачання 21-31 дні (днів) |
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IPB050N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V |
товар відсутній |
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IPB050N10NF2SATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 85µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V |
на замовлення 767 шт: термін постачання 21-31 дні (днів) |
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BC857BE6433HTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
товар відсутній |
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BC857BE6433HTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
товар відсутній |
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BC 857BF E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-TSFP-3-1 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товар відсутній |
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IDP04E120XKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 115 ns Technology: Standard Current - Average Rectified (Io): 11.2A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 4 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 4489 шт: термін постачання 21-31 дні (днів) |
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CY91F524BSDPMC1-GSE1 | Infineon Technologies |
Description: IC MCU 32BIT 576KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 72K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 26x12b SAR; D/A 1x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 44 DigiKey Programmable: Not Verified |
товар відсутній |
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CYW20721B1KUMLG | Infineon Technologies |
![]() Packaging: Tray Package / Case: 40-UFQFN Exposed Pad Sensitivity: -95.5dBm Mounting Type: Surface Mount Frequency: 2.402GHz ~ 2.48GHz Memory Size: 1MB Flash, 512kB RAM, 2MB ROM Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.76V ~ 3.63V Power - Output: 5dBm Protocol: Bluetooth v5.1 + EDR Current - Receiving: 5.9mA Data Rate (Max): 3Mbps Current - Transmitting: 5.6mA Supplier Device Package: 40-QFN (5x5) GPIO: 16 Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART Part Status: Not For New Designs DigiKey Programmable: Not Verified |
на замовлення 4866 шт: термін постачання 21-31 дні (днів) |
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CYBLE-202007-01 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 30-SMD Module Sensitivity: -93dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 32kB SRAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 4.5V Power - Output: 7.5dBm Data Rate: 1Mbps Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA Current - Transmitting: 27mA Antenna Type: Integrated, Trace RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CYBLE-202007-01 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 30-SMD Module Sensitivity: -93dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 32kB SRAM Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 4.5V Power - Output: 7.5dBm Data Rate: 1Mbps Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA Current - Transmitting: 27mA Antenna Type: Integrated, Trace RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1209 шт: термін постачання 21-31 дні (днів) |
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CY7C131-55NXC | Infineon Technologies |
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товар відсутній |
S27KS0643GABHV020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT SPI/OCTAL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 64MBIT SPI/OCTAL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 149 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 295 грн |
10+ | 258.08 грн |
25+ | 252.41 грн |
40+ | 235.6 грн |
80+ | 211.25 грн |
S80KS2564GACHV040 |
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Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 255 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 526.89 грн |
10+ | 467.11 грн |
25+ | 457.41 грн |
40+ | 427.78 грн |
80+ | 383.84 грн |
S80KS2564GACHI040 |
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Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 493.44 грн |
10+ | 436.94 грн |
25+ | 427.86 грн |
S80KS5122GABHM020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 406 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 755.74 грн |
10+ | 673.94 грн |
25+ | 658.64 грн |
40+ | 614.79 грн |
80+ | 541.2 грн |
338+ | 514.35 грн |
S80KS2563GABHI020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 256MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: SPI - Octal I/O
Access Time: 35 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 306 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 472.91 грн |
10+ | 415.56 грн |
25+ | 407.6 грн |
40+ | 379.75 грн |
80+ | 340.75 грн |
CY14V101QS-SF108XI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 454 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1040.09 грн |
10+ | 927.04 грн |
25+ | 914.45 грн |
92+ | 742.63 грн |
276+ | 710.78 грн |
CY14B101PA-SFXI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1772 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1005.12 грн |
10+ | 896.36 грн |
25+ | 884.16 грн |
50+ | 819.34 грн |
100+ | 718.03 грн |
250+ | 687.25 грн |
500+ | 671.58 грн |
1000+ | 626.16 грн |
CY14MB064Q2A-SXQ |
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Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 64KBIT SPI 40MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 451.62 грн |
10+ | 397.04 грн |
25+ | 389.44 грн |
50+ | 362.85 грн |
100+ | 325.59 грн |
CY14B101Q2-LHXI |
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Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 8DFN
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-DFN (5x6)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT SPI 40MHZ 8DFN
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-DFN (5x6)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 2137 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 954.94 грн |
10+ | 851.04 грн |
25+ | 839.53 грн |
40+ | 777.97 грн |
80+ | 681.78 грн |
308+ | 652.55 грн |
616+ | 637.68 грн |
S25FL032P0XNFB000 |
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Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 944 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 234.17 грн |
10+ | 205.07 грн |
25+ | 200.58 грн |
40+ | 187.23 грн |
80+ | 167.87 грн |
338+ | 167.26 грн |
676+ | 158.51 грн |
S25FL032P0XMFI003 |
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Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
товар відсутній
S25FL032P0XMFI000 |
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Виробник: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
товар відсутній
S25FL116K0XMFI043 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Verified
товар відсутній
S25FL116K0XMFI043 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Verified
товар відсутній
S25FL116K0XMFI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Verified
Description: IC FLASH 16MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Verified
товар відсутній
S25FL116K0XNFA010 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
товар відсутній
S25FL116K0XBHI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
товар відсутній
S25FL116K0XNFA013 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8WSON
Description: IC FLASH 16MBIT SPI/QUAD 8WSON
товар відсутній
S25FL116K0XNFA013 |
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Виробник: Infineon Technologies
Description: IC FLASH 16MBIT SPI/QUAD 8WSON
Description: IC FLASH 16MBIT SPI/QUAD 8WSON
товар відсутній
S25FL127SABNFI100 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 978 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 279.79 грн |
10+ | 239.12 грн |
25+ | 228.05 грн |
40+ | 208.89 грн |
80+ | 201.53 грн |
230+ | 190.8 грн |
440+ | 181.46 грн |
945+ | 174.39 грн |
S25FL127SABMFV101 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 4419 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 300.32 грн |
10+ | 262.11 грн |
25+ | 256.4 грн |
91+ | 214.58 грн |
273+ | 213.79 грн |
546+ | 205.98 грн |
1001+ | 192.62 грн |
S25FL127SABNFI101 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 4017 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 276.75 грн |
10+ | 241.75 грн |
25+ | 236.48 грн |
99+ | 197.92 грн |
297+ | 197.2 грн |
594+ | 190 грн |
1089+ | 177.67 грн |
S25FL127SABBHID00 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 64011 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 223.53 грн |
10+ | 193.36 грн |
25+ | 190.39 грн |
40+ | 178.2 грн |
80+ | 159.23 грн |
338+ | 153.99 грн |
676+ | 150.92 грн |
1014+ | 140.53 грн |
5070+ | 127.21 грн |
S25FL127SABBHIC00 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 51029 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
153+ | 248.62 грн |
S25FL127SABBHIC00 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товар відсутній
S25FL127SABBHIT00 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Bulk
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Bulk
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 172 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
172+ | 172.59 грн |
S25FL127SABBHIT00 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Obsolete
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товар відсутній
MB39C007WQN-G-JN-ERE1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 800MA DL 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 24-QFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.86V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
Description: IC REG BUCK ADJ 800MA DL 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 24-QFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.86V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.446V
Part Status: Obsolete
товар відсутній
S29GL256S90TFI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 527 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 382.43 грн |
10+ | 338.91 грн |
25+ | 335.94 грн |
S29GL256S90DHI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 2570 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 382.43 грн |
10+ | 338.91 грн |
25+ | 335.94 грн |
S29GL256S90FHI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товар відсутній
S29GL256S90DHI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 685 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 382.43 грн |
10+ | 338.91 грн |
25+ | 335.94 грн |
S29GL256S90FHI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Verified
товар відсутній
S29GL256S90TFI020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
на замовлення 797 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 560.34 грн |
10+ | 496.54 грн |
25+ | 486.2 грн |
40+ | 454.7 грн |
91+ | 408 грн |
273+ | 395.67 грн |
455+ | 370.09 грн |
S29GL256S90FHI023 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товар відсутній
IPD40DP06NMATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 4.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Description: MOSFET P-CH 60V 4.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
товар відсутній
IPD40DP06NMATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 4.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
Description: MOSFET P-CH 60V 4.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V
на замовлення 2312 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.19 грн |
10+ | 57.62 грн |
100+ | 39.92 грн |
500+ | 31.3 грн |
1000+ | 26.64 грн |
IPD052N10NF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
товар відсутній
IPD130N10NF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 1967 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 75.27 грн |
10+ | 59.74 грн |
100+ | 46.44 грн |
500+ | 36.94 грн |
1000+ | 30.1 грн |
IPT022N10NF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1800+ | 135.59 грн |
IPT022N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 236A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 262.3 грн |
10+ | 212.03 грн |
100+ | 171.55 грн |
500+ | 143.1 грн |
IPT017N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 216µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 216µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V
товар відсутній
IPT017N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 216µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 294A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 216µA
Supplier Device Package: PG-HSOF-8-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9300 pF @ 50 V
на замовлення 1249 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 296.52 грн |
10+ | 239.63 грн |
100+ | 193.84 грн |
500+ | 161.7 грн |
IPF024N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
товар відсутній
IPF024N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 227A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
на замовлення 774 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 256.98 грн |
10+ | 207.64 грн |
100+ | 168.02 грн |
IPB026N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 158.5 грн |
IPB026N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 169µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 50 V
на замовлення 1224 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 262.3 грн |
10+ | 212.25 грн |
100+ | 171.7 грн |
IPF016N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
800+ | 163.6 грн |
IPF016N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Supplier Device Package: PG-TO263-7-14
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 1064 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 422.73 грн |
10+ | 272.58 грн |
100+ | 196.39 грн |
IPB050N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
товар відсутній
IPB050N10NF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 5.05mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
на замовлення 767 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 137.61 грн |
10+ | 109.82 грн |
100+ | 87.43 грн |
BC857BE6433HTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товар відсутній
BC857BE6433HTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товар відсутній
BC 857BF E6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-TSFP-3-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-TSFP-3-1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
товар відсутній
IDP04E120XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 11.2A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 11.2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 11.2A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 11.2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 4489 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
460+ | 46.23 грн |
CY91F524BSDPMC1-GSE1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 26x12b SAR; D/A 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 44
DigiKey Programmable: Not Verified
товар відсутній
CYW20721B1KUMLG |
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Виробник: Infineon Technologies
Description: BLUETOOTH, BLE AND IEEE 802.15.4
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: BLUETOOTH, BLE AND IEEE 802.15.4
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 1MB Flash, 512kB RAM, 2MB ROM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 8DPSK, 8PSK, DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, PCM, PDM, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 4866 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 724.57 грн |
10+ | 639.75 грн |
25+ | 581.58 грн |
80+ | 491.22 грн |
230+ | 450.28 грн |
490+ | 409.34 грн |
980+ | 362.37 грн |
CYBLE-202007-01 |
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Виробник: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 30-SMD Module
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Power - Output: 7.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 27mA
Antenna Type: Integrated, Trace
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT TH SMD
Packaging: Tape & Reel (TR)
Package / Case: 30-SMD Module
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Power - Output: 7.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 27mA
Antenna Type: Integrated, Trace
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
500+ | 772.46 грн |
CYBLE-202007-01 |
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Виробник: Infineon Technologies
Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 30-SMD Module
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Power - Output: 7.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 27mA
Antenna Type: Integrated, Trace
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: RF TXRX MOD BT TH SMD
Packaging: Cut Tape (CT)
Package / Case: 30-SMD Module
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Power - Output: 7.5dBm
Data Rate: 1Mbps
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Current - Transmitting: 27mA
Antenna Type: Integrated, Trace
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1209 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1158.7 грн |
10+ | 1009.48 грн |
25+ | 929.79 грн |
100+ | 797.8 грн |
250+ | 747.94 грн |
CY7C131-55NXC |
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Виробник: Infineon Technologies
Description: IC SRAM 8KBIT PARALLEL 52PQFP
Description: IC SRAM 8KBIT PARALLEL 52PQFP
товар відсутній