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S6E2CC9L0AGL2000A S6E2CC9L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 216LQFP
товар відсутній
BCR183WH6327XTSA1 BCR183WH6327XTSA1 Infineon Technologies bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3 Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 18960 шт:
термін постачання 21-31 дні (днів)
6571+3.49 грн
Мінімальне замовлення: 6571
BCR183E6433 Infineon Technologies Description: BIPOLAR DIGITAL TRANSISTOR
товар відсутній
BCR141WH6327 BCR141WH6327 Infineon Technologies INFNS17182-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
BCR141TE6327 BCR141TE6327 Infineon Technologies INFNS11720-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
13172+1.4 грн
Мінімальне замовлення: 13172
BCR141W BCR141W Infineon Technologies INFNS17182-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
BCR141SE6327 BCR141SE6327 Infineon Technologies INFNS14747-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR141SH6327 BCR141SH6327 Infineon Technologies INFNS11720-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR 141S H6327 Infineon Technologies INFNS11720-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3796+5.68 грн
Мінімальне замовлення: 3796
BCR141SH6327XTSA1 BCR141SH6327XTSA1 Infineon Technologies bcr141series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143fb361b10297 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tube
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-PO
на замовлення 35596 шт:
термін постачання 21-31 дні (днів)
3796+5.75 грн
Мінімальне замовлення: 3796
IDP06E60XKSA1 IDP06E60XKSA1 Infineon Technologies INFNS30075-1.pdf?t.download=true&u=5oefqw Description: DIODE GP 600V 14.7A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 14.7A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
306+69.52 грн
Мінімальне замовлення: 306
AUIRGSL30B60K AUIRGSL30B60K Infineon Technologies AUIRGS%28L%2930B60K.pdf Description: IGBT 600V 78A 370W TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
150+164.25 грн
Мінімальне замовлення: 150
BTS70401EPAXUMA1 BTS70401EPAXUMA1 Infineon Technologies Infineon-BTS7040-1EPA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb0163fe8f965308bc Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8421 шт:
термін постачання 21-31 дні (днів)
3+108.94 грн
10+ 93.96 грн
25+ 89.2 грн
100+ 68.76 грн
250+ 64.27 грн
500+ 56.8 грн
1000+ 44.1 грн
Мінімальне замовлення: 3
BTS70122EPAXUMA1 BTS70122EPAXUMA1 Infineon Technologies Infineon-BTS7012-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f1062883c6ca5 Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+79.86 грн
6000+ 73.26 грн
Мінімальне замовлення: 3000
BTS70122EPAXUMA1 BTS70122EPAXUMA1 Infineon Technologies Infineon-BTS7012-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f1062883c6ca5 Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 8712 шт:
термін постачання 21-31 дні (днів)
2+244.33 грн
10+ 153.91 грн
25+ 132.69 грн
100+ 102.15 грн
250+ 91.25 грн
500+ 84.6 грн
1000+ 77.78 грн
Мінімальне замовлення: 2
BTS707NTMA1 BTS707NTMA1 Infineon Technologies Description: SMART TWO CHANNEL HIGHSIDE POWER
Packaging: Bulk
Part Status: Active
на замовлення 21271 шт:
термін постачання 21-31 дні (днів)
59+364.14 грн
Мінімальне замовлення: 59
BTS737S3NUMA1 BTS737S3NUMA1 Infineon Technologies Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
товар відсутній
BTS70402EPAXUMA1 BTS70402EPAXUMA1 Infineon Technologies Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+56.26 грн
Мінімальне замовлення: 3000
BTS70402EPAXUMA1 BTS70402EPAXUMA1 Infineon Technologies Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6148 шт:
термін постачання 21-31 дні (днів)
3+122.94 грн
10+ 106.33 грн
25+ 100.35 грн
100+ 80.22 грн
250+ 75.33 грн
500+ 65.91 грн
1000+ 53.72 грн
Мінімальне замовлення: 3
BTS70121EPAXUMA1 BTS70121EPAXUMA1 Infineon Technologies Infineon-BTS7012-1EPA-DataSheet-v01_03-EN.pdf?fileId=5546d462636cc8fb0163fe8fb67008c2 Description: PROFET
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+57.88 грн
Мінімальне замовлення: 3000
PEF55218EV1.2-G Infineon Technologies Description: GEMINAX-A8+ MAX 8 CHANNEL ADSL2+
Packaging: Bulk
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
12+1922.49 грн
Мінімальне замовлення: 12
IR38263MTRPBFAUMA1 IR38263MTRPBFAUMA1 Infineon Technologies Infineon-IR38263M-DS-v03_02-EN.pdf?fileId=5546d4625b62cd8a015bcf81f90a6e52 Description: IC REG 30A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
товар відсутній
IR38263MTRPBFAUMA1 IR38263MTRPBFAUMA1 Infineon Technologies Infineon-IR38263M-DS-v03_02-EN.pdf?fileId=5546d4625b62cd8a015bcf81f90a6e52 Description: IC REG 30A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 2070 шт:
термін постачання 21-31 дні (днів)
1+514.34 грн
10+ 445.09 грн
25+ 420.81 грн
100+ 342.26 грн
250+ 324.71 грн
500+ 291.36 грн
1000+ 241.7 грн
FF6MR12KM1BOSA1 FF6MR12KM1BOSA1 Infineon Technologies Infineon-FF6MR12KM1-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bcb72b5e56bc Description: SIC 2N-CH 1200V 250A AG-62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: AG-62MM
Part Status: Obsolete
товар відсутній
S29GL01GT12DHN010 S29GL01GT12DHN010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL512T12DHVV20 S29GL512T12DHVV20 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL512T12DHN020 S29GL512T12DHN020 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GT12DHVV20 S29GL01GT12DHVV20 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 317 шт:
термін постачання 21-31 дні (днів)
1+1157.07 грн
10+ 989.23 грн
25+ 943.41 грн
40+ 864.03 грн
80+ 833.48 грн
260+ 783.91 грн
IPP65R600E6XKSA1 IPP65R600E6XKSA1 Infineon Technologies IPP65R600E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304329a0f6ee0129d16f1b0d0661 Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 27080 шт:
термін постачання 21-31 дні (днів)
462+47.16 грн
Мінімальне замовлення: 462
IPP65R600E6 IPP65R600E6 Infineon Technologies INFN-S-A0004583418-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
462+50.58 грн
Мінімальне замовлення: 462
IPP65R600C6 IPP65R600C6 Infineon Technologies INFNS28015-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
462+50.58 грн
Мінімальне замовлення: 462
IPP60R280E6 IPP60R280E6 Infineon Technologies INFN-S-A0004583476-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
IPP60R380P6 IPP60R380P6 Infineon Technologies Infineon-IPX60R380P6-DS-v02_03-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Supplier Device Package: PG-TO220-3
Part Status: Active
товар відсутній
IPP60R380E6 Infineon Technologies Infineon-IPP60R380E6-DS-v02_05-EN.pdf?fileId=db3a304327b8975001281f82741f44c8 Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
BTS130-E3045A BTS130-E3045A Infineon Technologies INFNS18069-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 814 шт:
термін постачання 21-31 дні (днів)
128+166.71 грн
Мінімальне замовлення: 128
BTS114AE3045A BTS114AE3045A Infineon Technologies INFNS25850-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 10937 шт:
термін постачання 21-31 дні (днів)
94+234.6 грн
Мінімальне замовлення: 94
BTS114A E3045A BTS114A E3045A Infineon Technologies INFNS25850-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
94+234.6 грн
Мінімальне замовлення: 94
BTS115A BTS115A Infineon Technologies INFNS25849-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Part Status: Obsolete
товар відсутній
BTS132E3045ANTMA1 BTS132E3045ANTMA1 Infineon Technologies INFNS05886-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
71+303.53 грн
Мінімальне замовлення: 71
BTS132 BTS132 Infineon Technologies INFNS25845-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
69+315.37 грн
Мінімальне замовлення: 69
BTS132E3129NKSA1 BTS132E3129NKSA1 Infineon Technologies INFNS05886-1.pdf?t.download=true&u=5oefqw Description: BTS132 - N-CHANNEL TEMPFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 23500 шт:
термін постачання 21-31 дні (днів)
62+349.35 грн
Мінімальне замовлення: 62
IKCS12G60DABKMA1 Infineon Technologies Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
на замовлення 9450 шт:
термін постачання 21-31 дні (днів)
6+3632.16 грн
Мінімальне замовлення: 6
IRG4PC20U IRG4PC20U Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 13A 60W TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/86ns
Switching Energy: 100µJ (on), 120µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
товар відсутній
FD400R16KF4 Infineon Technologies INFNS14527-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 3100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+35156.47 грн
FD400R33KF2CKNOSA1 FD400R33KF2CKNOSA1 Infineon Technologies Infineon-FD400R33KF2C_K-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43024de4f42 Description: IGBT MOD 3300V 660A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
1+117919.4 грн
BUZ22E3045A BUZ22E3045A Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
на замовлення 53682 шт:
термін постачання 21-31 дні (днів)
473+45.98 грн
Мінімальне замовлення: 473
KT100 KT100 Infineon Technologies INFNS04262-1.pdf?t.download=true&u=5oefqw Description: SENSOR PTC 2KOHM 3% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92
Resistance @ 25°C: 2 kOhms
на замовлення 117286 шт:
термін постачання 21-31 дні (днів)
1731+11.88 грн
Мінімальне замовлення: 1731
S25FL128LAGNFI013 S25FL128LAGNFI013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+193.01 грн
Мінімальне замовлення: 4000
S25FS512SAGBHI210 S25FS512SAGBHI210 Infineon Technologies Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 401 шт:
термін постачання 21-31 дні (днів)
1+706.54 грн
10+ 604.02 грн
25+ 576.1 грн
40+ 527.64 грн
80+ 509.02 грн
338+ 472.3 грн
KITACTBRD60R040S7TOBO1 KITACTBRD60R040S7TOBO1 Infineon Technologies Infineon-Evaluation_kit_KIT_ACT_BRD_60R040S7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae6017087574b281d43 Description: ACTIVE BRIDGE BOARD 60R040S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+3975.44 грн
BFR360FH6765XTSA1 BFR360FH6765XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 9V 14GHZ TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.79 грн
Мінімальне замовлення: 3000
BFR360FH6765XTSA1 BFR360FH6765XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 9V 14GHZ TSFP-3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
на замовлення 7714 шт:
термін постачання 21-31 дні (днів)
20+16.34 грн
30+ 10.27 грн
34+ 8.96 грн
100+ 7.02 грн
250+ 6.37 грн
500+ 5.97 грн
1000+ 5.55 грн
Мінімальне замовлення: 20
IPP60R380E6XKSA1 IPP60R380E6XKSA1 Infineon Technologies IPP60R380E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281f82741f44c8 Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
286+73.39 грн
Мінімальне замовлення: 286
BTT3018EJDEMOBOARDTOBO1 BTT3018EJDEMOBOARDTOBO1 Infineon Technologies Infineon-Demoboard_BTT3018EJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc89f6a011a Description: BTT3018EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTT3018EJ
Platform: Arduino
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+24659.56 грн
BAV 70S H6327 BAV 70S H6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
товар відсутній
KP254PS2GOKITTOBO1 KP254PS2GOKITTOBO1 Infineon Technologies Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18 Description: DIGITAL BAP PRESSURE SENSOR 2GO
Packaging: Box
Sensitivity: ±1.5kPa
Interface: Serial, SPI
Voltage - Supply: 3.3V, 5V
Sensor Type: Pressure
Utilized IC / Part: KP254
Supplied Contents: Board(s)
Sensing Range: 40 ~ 115 kPa
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+2802.81 грн
IPD22N08S2L50ATMA1 IPD22N08S2L50ATMA1 Infineon Technologies Infineon-IPD22N08S2L_50-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426dbff3ada&fileId=db3a304412b407950112b426ee5f3b08&ack=t Description: MOSFET N-CH 75V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 31µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
товар відсутній
AUIRF2804L-313 AUIRF2804L-313 Infineon Technologies Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BASICPLUSDEMOBOARDTOBO1 BASICPLUSDEMOBOARDTOBO1 Infineon Technologies Infineon-LITIX_Basic+_Family_Board-PP-v01_00-EN.pdf?fileId=5546d46266a498f50166e96514f62bd9 Description: EVALUATION BOARD FOR LITIX BASIC
Packaging: Bulk
Features: Dimmable
Voltage - Output: 1.4V ~ 7V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 60mA
Utilized IC / Part: TLD1114-1EP, TLD2141-3EP, TLD2331-3EP
Supplied Contents: Board(s)
Outputs and Type: 3, Non-Isolated
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+13201.67 грн
SP370251160XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: SENSOR TIRE PRESSURE DIGITAL
Packaging: Bulk
Output Type: Digital
Operating Temperature: -40°C ~ 125°C
Sensor Type: Tire Pressure Monitoring (TPMS)
на замовлення 44800 шт:
термін постачання 21-31 дні (днів)
65+326.39 грн
Мінімальне замовлення: 65
S6E2CC9L0AGL2000A download
S6E2CC9L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 216LQFP
товар відсутній
BCR183WH6327XTSA1 bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
BCR183WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 18960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6571+3.49 грн
Мінімальне замовлення: 6571
BCR183E6433
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
товар відсутній
BCR141WH6327 INFNS17182-1.pdf?t.download=true&u=5oefqw
BCR141WH6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
BCR141TE6327 INFNS11720-1.pdf?t.download=true&u=5oefqw
BCR141TE6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13172+1.4 грн
Мінімальне замовлення: 13172
BCR141W INFNS17182-1.pdf?t.download=true&u=5oefqw
BCR141W
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товар відсутній
BCR141SE6327 INFNS14747-1.pdf?t.download=true&u=5oefqw
BCR141SE6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR141SH6327 INFNS11720-1.pdf?t.download=true&u=5oefqw
BCR141SH6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR 141S H6327 INFNS11720-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3796+5.68 грн
Мінімальне замовлення: 3796
BCR141SH6327XTSA1 bcr141series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143fb361b10297
BCR141SH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tube
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-PO
на замовлення 35596 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3796+5.75 грн
Мінімальне замовлення: 3796
IDP06E60XKSA1 INFNS30075-1.pdf?t.download=true&u=5oefqw
IDP06E60XKSA1
Виробник: Infineon Technologies
Description: DIODE GP 600V 14.7A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 14.7A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
306+69.52 грн
Мінімальне замовлення: 306
AUIRGSL30B60K AUIRGS%28L%2930B60K.pdf
AUIRGSL30B60K
Виробник: Infineon Technologies
Description: IGBT 600V 78A 370W TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
150+164.25 грн
Мінімальне замовлення: 150
BTS70401EPAXUMA1 Infineon-BTS7040-1EPA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb0163fe8f965308bc
BTS70401EPAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8421 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.94 грн
10+ 93.96 грн
25+ 89.2 грн
100+ 68.76 грн
250+ 64.27 грн
500+ 56.8 грн
1000+ 44.1 грн
Мінімальне замовлення: 3
BTS70122EPAXUMA1 Infineon-BTS7012-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f1062883c6ca5
BTS70122EPAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+79.86 грн
6000+ 73.26 грн
Мінімальне замовлення: 3000
BTS70122EPAXUMA1 Infineon-BTS7012-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f1062883c6ca5
BTS70122EPAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 8712 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+244.33 грн
10+ 153.91 грн
25+ 132.69 грн
100+ 102.15 грн
250+ 91.25 грн
500+ 84.6 грн
1000+ 77.78 грн
Мінімальне замовлення: 2
BTS707NTMA1
BTS707NTMA1
Виробник: Infineon Technologies
Description: SMART TWO CHANNEL HIGHSIDE POWER
Packaging: Bulk
Part Status: Active
на замовлення 21271 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
59+364.14 грн
Мінімальне замовлення: 59
BTS737S3NUMA1
BTS737S3NUMA1
Виробник: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
товар відсутній
BTS70402EPAXUMA1 Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb
BTS70402EPAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+56.26 грн
Мінімальне замовлення: 3000
BTS70402EPAXUMA1 Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb
BTS70402EPAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6148 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+122.94 грн
10+ 106.33 грн
25+ 100.35 грн
100+ 80.22 грн
250+ 75.33 грн
500+ 65.91 грн
1000+ 53.72 грн
Мінімальне замовлення: 3
BTS70121EPAXUMA1 Infineon-BTS7012-1EPA-DataSheet-v01_03-EN.pdf?fileId=5546d462636cc8fb0163fe8fb67008c2
BTS70121EPAXUMA1
Виробник: Infineon Technologies
Description: PROFET
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+57.88 грн
Мінімальне замовлення: 3000
PEF55218EV1.2-G
Виробник: Infineon Technologies
Description: GEMINAX-A8+ MAX 8 CHANNEL ADSL2+
Packaging: Bulk
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+1922.49 грн
Мінімальне замовлення: 12
IR38263MTRPBFAUMA1 Infineon-IR38263M-DS-v03_02-EN.pdf?fileId=5546d4625b62cd8a015bcf81f90a6e52
IR38263MTRPBFAUMA1
Виробник: Infineon Technologies
Description: IC REG 30A 34PQFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
товар відсутній
IR38263MTRPBFAUMA1 Infineon-IR38263M-DS-v03_02-EN.pdf?fileId=5546d4625b62cd8a015bcf81f90a6e52
IR38263MTRPBFAUMA1
Виробник: Infineon Technologies
Description: IC REG 30A 34PQFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 34-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
на замовлення 2070 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+514.34 грн
10+ 445.09 грн
25+ 420.81 грн
100+ 342.26 грн
250+ 324.71 грн
500+ 291.36 грн
1000+ 241.7 грн
FF6MR12KM1BOSA1 Infineon-FF6MR12KM1-DataSheet-v02_00-EN.pdf?fileId=5546d46272aa54c00172bcb72b5e56bc
FF6MR12KM1BOSA1
Виробник: Infineon Technologies
Description: SIC 2N-CH 1200V 250A AG-62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Supplier Device Package: AG-62MM
Part Status: Obsolete
товар відсутній
S29GL01GT12DHN010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT12DHN010
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL512T12DHVV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12DHVV20
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL512T12DHN020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12DHN020
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товар відсутній
S29GL01GT12DHVV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT12DHVV20
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
на замовлення 317 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1157.07 грн
10+ 989.23 грн
25+ 943.41 грн
40+ 864.03 грн
80+ 833.48 грн
260+ 783.91 грн
IPP65R600E6XKSA1 IPP65R600E6_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304329a0f6ee0129d16f1b0d0661
IPP65R600E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 27080 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
462+47.16 грн
Мінімальне замовлення: 462
IPP65R600E6 INFN-S-A0004583418-1.pdf?t.download=true&u=5oefqw
IPP65R600E6
Виробник: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
462+50.58 грн
Мінімальне замовлення: 462
IPP65R600C6 INFNS28015-1.pdf?t.download=true&u=5oefqw
IPP65R600C6
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 1791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
462+50.58 грн
Мінімальне замовлення: 462
IPP60R280E6 INFN-S-A0004583476-1.pdf?t.download=true&u=5oefqw
IPP60R280E6
Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
товар відсутній
IPP60R380P6 Infineon-IPX60R380P6-DS-v02_03-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPP60R380P6
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Supplier Device Package: PG-TO220-3
Part Status: Active
товар відсутній
IPP60R380E6 Infineon-IPP60R380E6-DS-v02_05-EN.pdf?fileId=db3a304327b8975001281f82741f44c8
Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
товар відсутній
BTS130-E3045A INFNS18069-1.pdf?t.download=true&u=5oefqw
BTS130-E3045A
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 814 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
128+166.71 грн
Мінімальне замовлення: 128
BTS114AE3045A INFNS25850-1.pdf?t.download=true&u=5oefqw
BTS114AE3045A
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 10937 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
94+234.6 грн
Мінімальне замовлення: 94
BTS114A E3045A INFNS25850-1.pdf?t.download=true&u=5oefqw
BTS114A E3045A
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
94+234.6 грн
Мінімальне замовлення: 94
BTS115A INFNS25849-1.pdf?t.download=true&u=5oefqw
BTS115A
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Part Status: Obsolete
товар відсутній
BTS132E3045ANTMA1 INFNS05886-1.pdf?t.download=true&u=5oefqw
BTS132E3045ANTMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-5
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
71+303.53 грн
Мінімальне замовлення: 71
BTS132 INFNS25845-1.pdf?t.download=true&u=5oefqw
BTS132
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
69+315.37 грн
Мінімальне замовлення: 69
BTS132E3129NKSA1 INFNS05886-1.pdf?t.download=true&u=5oefqw
BTS132E3129NKSA1
Виробник: Infineon Technologies
Description: BTS132 - N-CHANNEL TEMPFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
на замовлення 23500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
62+349.35 грн
Мінімальне замовлення: 62
IKCS12G60DABKMA1
Виробник: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
на замовлення 9450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+3632.16 грн
Мінімальне замовлення: 6
IRG4PC20U Part_Number_Guide_Web.pdf
IRG4PC20U
Виробник: Infineon Technologies
Description: IGBT 600V 13A 60W TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/86ns
Switching Energy: 100µJ (on), 120µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
товар відсутній
FD400R16KF4 INFNS14527-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 3100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 65 nF @ 25 V
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+35156.47 грн
FD400R33KF2CKNOSA1 Infineon-FD400R33KF2C_K-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43024de4f42
FD400R33KF2CKNOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 660A 4800W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 660 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 4800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 50 nF @ 25 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+117919.4 грн
BUZ22E3045A
BUZ22E3045A
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
на замовлення 53682 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
473+45.98 грн
Мінімальне замовлення: 473
KT100 INFNS04262-1.pdf?t.download=true&u=5oefqw
KT100
Виробник: Infineon Technologies
Description: SENSOR PTC 2KOHM 3% TO92
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92
Resistance @ 25°C: 2 kOhms
на замовлення 117286 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1731+11.88 грн
Мінімальне замовлення: 1731
S25FL128LAGNFI013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGNFI013
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+193.01 грн
Мінімальне замовлення: 4000
S25FS512SAGBHI210 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
S25FS512SAGBHI210
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 401 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+706.54 грн
10+ 604.02 грн
25+ 576.1 грн
40+ 527.64 грн
80+ 509.02 грн
338+ 472.3 грн
KITACTBRD60R040S7TOBO1 Infineon-Evaluation_kit_KIT_ACT_BRD_60R040S7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae6017087574b281d43
KITACTBRD60R040S7TOBO1
Виробник: Infineon Technologies
Description: ACTIVE BRIDGE BOARD 60R040S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3975.44 грн
BFR360FH6765XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFR360FH6765XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.79 грн
Мінімальне замовлення: 3000
BFR360FH6765XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFR360FH6765XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ TSFP-3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
на замовлення 7714 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
20+16.34 грн
30+ 10.27 грн
34+ 8.96 грн
100+ 7.02 грн
250+ 6.37 грн
500+ 5.97 грн
1000+ 5.55 грн
Мінімальне замовлення: 20
IPP60R380E6XKSA1 IPP60R380E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281f82741f44c8
IPP60R380E6XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
286+73.39 грн
Мінімальне замовлення: 286
BTT3018EJDEMOBOARDTOBO1 Infineon-Demoboard_BTT3018EJ-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701712fc89f6a011a
BTT3018EJDEMOBOARDTOBO1
Виробник: Infineon Technologies
Description: BTT3018EJ DEMOBOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTT3018EJ
Platform: Arduino
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+24659.56 грн
BAV 70S H6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV 70S H6327
Виробник: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-6
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
товар відсутній
KP254PS2GOKITTOBO1 Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18
KP254PS2GOKITTOBO1
Виробник: Infineon Technologies
Description: DIGITAL BAP PRESSURE SENSOR 2GO
Packaging: Box
Sensitivity: ±1.5kPa
Interface: Serial, SPI
Voltage - Supply: 3.3V, 5V
Sensor Type: Pressure
Utilized IC / Part: KP254
Supplied Contents: Board(s)
Sensing Range: 40 ~ 115 kPa
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2802.81 грн
IPD22N08S2L50ATMA1 Infineon-IPD22N08S2L_50-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426dbff3ada&fileId=db3a304412b407950112b426ee5f3b08&ack=t
IPD22N08S2L50ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 31µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
товар відсутній
AUIRF2804L-313
AUIRF2804L-313
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BASICPLUSDEMOBOARDTOBO1 Infineon-LITIX_Basic+_Family_Board-PP-v01_00-EN.pdf?fileId=5546d46266a498f50166e96514f62bd9
BASICPLUSDEMOBOARDTOBO1
Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR LITIX BASIC
Packaging: Bulk
Features: Dimmable
Voltage - Output: 1.4V ~ 7V
Voltage - Input: 8V ~ 16V
Current - Output / Channel: 60mA
Utilized IC / Part: TLD1114-1EP, TLD2141-3EP, TLD2331-3EP
Supplied Contents: Board(s)
Outputs and Type: 3, Non-Isolated
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+13201.67 грн
SP370251160XTMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: SENSOR TIRE PRESSURE DIGITAL
Packaging: Bulk
Output Type: Digital
Operating Temperature: -40°C ~ 125°C
Sensor Type: Tire Pressure Monitoring (TPMS)
на замовлення 44800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
65+326.39 грн
Мінімальне замовлення: 65
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