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BTN7970S BTN7970S Infineon Technologies INFNS11665-1.pdf?t.download=true&u=5oefqw Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 90A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Technology: DMOS
Supplier Device Package: P-TO220-7-11
Motor Type - Stepper: Unipolar
Grade: Automotive
Part Status: Obsolete
на замовлення 5755 шт:
термін постачання 21-31 дні (днів)
70+309.37 грн
Мінімальне замовлення: 70
TDA7110FHTMA1 TDA7110FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
TDA7110FHTMA1 TDA7110FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
BSZ076N06NS3G BSZ076N06NS3G Infineon Technologies INFNS15383-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
товар відсутній
BSZ0702LSATMA1 BSZ0702LSATMA1 Infineon Technologies Infineon-BSZ0702LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b86789613d0 Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
товар відсутній
EVALPSIRS200XTOBO1 EVALPSIRS200XTOBO1 Infineon Technologies Infineon-EVAL-PS-IRS200x-UserManual-v01_00-EN.pdf?fileId=5546d46269e1c019016ae54769b13bd6 Description: EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: PSIRS200X
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+14414.77 грн
IRL6372TRPBF IRL6372TRPBF Infineon Technologies irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579 Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+26.06 грн
8000+ 23.9 грн
Мінімальне замовлення: 4000
IRL6372TRPBF IRL6372TRPBF Infineon Technologies irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579 Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12299 шт:
термін постачання 21-31 дні (днів)
5+63.03 грн
10+ 49.68 грн
100+ 38.61 грн
500+ 30.72 грн
1000+ 25.02 грн
2000+ 23.55 грн
Мінімальне замовлення: 5
IRL60SC216ARMA1 IRL60SC216ARMA1 Infineon Technologies Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товар відсутній
IRL60SC216ARMA1 IRL60SC216ARMA1 Infineon Technologies Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товар відсутній
PMB8870V1.1 Infineon Technologies PMB8870.pdf?t.download=true&u=ovmfp3 Description: S-GOLD GSM/E-GPRS BASEBAND IC
Packaging: Bulk
на замовлення 206000 шт:
термін постачання 21-31 дні (днів)
27+796.05 грн
Мінімальне замовлення: 27
MB90553BPMC-G-329-JNE1 Infineon Technologies Description: IC ANALOG
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
MB90553BPMC-G-353-JNE1 MB90553BPMC-G-353-JNE1 Infineon Technologies Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
товар відсутній
MB90553BPMC-G-373E1 MB90553BPMC-G-373E1 Infineon Technologies Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
товар відсутній
IPT65R105G7XTMA1 IPT65R105G7XTMA1 Infineon Technologies Infineon-IPT65R105G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902315e4f23 Description: MOSFET N-CH 650V 24A 8HSOF
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
1+489.44 грн
10+ 426.35 грн
IPP530N15N3GXKSA1 IPP530N15N3GXKSA1 Infineon Technologies Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c Description: MOSFET N-CH 150V 21A TO220-3
товар відсутній
BGSX22G2A10E6327XTSA1 BGSX22G2A10E6327XTSA1 Infineon Technologies Infineon-BGSX22G2A10-PQR-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f4dbd8964789 Description: IC RF SWITCH DPDT ATSLP10-2
товар відсутній
BTT61002ERAXUMA1 BTT61002ERAXUMA1 Infineon Technologies Infineon-BTT6100-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21e7e7570d6e Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товар відсутній
BTT60502ERAXUMA1 BTT60502ERAXUMA1 Infineon Technologies Infineon-BTT6050-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21d599df0d6a Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+139.71 грн
Мінімальне замовлення: 3000
AUIRFC8408TR Infineon Technologies Description: MOSFET N-CH SMD D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
CY7C1361KVE33-133AXM CY7C1361KVE33-133AXM Infineon Technologies 5047 Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
1+538.46 грн
ESD208B102ELSE6327XTSA1 ESD208B102ELSE6327XTSA1 Infineon Technologies ESD208-B1-02.pdf Description: TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 2276984 шт:
термін постачання 21-31 дні (днів)
6918+2.87 грн
Мінімальне замовлення: 6918
ESD3V3XU1USE6327 ESD3V3XU1USE6327 Infineon Technologies INFNS17313-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
6918+2.87 грн
Мінімальне замовлення: 6918
ESD3V3U1U02LSE6327XTSA1 ESD3V3U1U02LSE6327XTSA1 Infineon Technologies INFNS15393-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 3.3VWM 28VC TSSLP-2-1
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
на замовлення 918102 шт:
термін постачання 21-31 дні (днів)
4157+5.03 грн
Мінімальне замовлення: 4157
ESD18VU1B02LSE6327XTSA1 ESD18VU1B02LSE6327XTSA1 Infineon Technologies ESD18VU1B.pdf Description: TVS DIODE 18.5VWM 17VC TSSLP-2-1
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
на замовлення 13559 шт:
термін постачання 21-31 дні (днів)
4157+5.01 грн
Мінімальне замовлення: 4157
BAR9002ELSE6327XTSA1 BAR9002ELSE6327XTSA1 Infineon Technologies INFNS19426-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 80V 250MW TSSLP-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSSLP-2-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 50197 шт:
термін постачання 21-31 дні (днів)
24+13.23 грн
37+ 8.32 грн
42+ 7.22 грн
100+ 5.63 грн
250+ 5.09 грн
500+ 4.76 грн
1000+ 4.42 грн
2500+ 4.14 грн
5000+ 3.97 грн
Мінімальне замовлення: 24
IPP052NE7N3 G Infineon Technologies Description: N-CHANNEL POWER MOSFET
товар відсутній
TC275TP64F200NDCLXUMA1 TC275TP64F200NDCLXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
товар відсутній
TC275TP64F200NDCLXUMA1 TC275TP64F200NDCLXUMA1 Infineon Technologies TC270_TC275_TC277_v1.2_4-4-19.pdf Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
товар відсутній
TC297TX128F300NBCKXUMA1 TC297TX128F300NBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.7M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 263
DigiKey Programmable: Not Verified
товар відсутній
TC297TX128F300NBCKXUMA1 TC297TX128F300NBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.7M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 263
DigiKey Programmable: Not Verified
товар відсутній
TC234LX32F200FABKXUMA1 TC234LX32F200FABKXUMA1 Infineon Technologies TriCore_Family_BR-2016_web.pdf?fileId=5546d46159d9a237015a127ab33e0137 Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, Ethernet, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+2058.92 грн
Мінімальне замовлення: 1000
TT210N12KOFHPSA1 TT210N12KOFHPSA1 Infineon Technologies TT210N.pdf Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
3+9056.6 грн
Мінімальне замовлення: 3
IPP100N04S303AKSA1 IPP100N04S303AKSA1 Infineon Technologies IPx100N04S3-03.pdf Description: MOSFET N-CH 40V 100A TO220-3
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
148+152.35 грн
Мінімальне замовлення: 148
IPI100N04S4H2AKSA1 IPI100N04S4H2AKSA1 Infineon Technologies IPx100N04S4-H2.pdf Description: MOSFET N-CH 40V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
484+44.54 грн
Мінімальне замовлення: 484
IPI100N04S3-03 IPI100N04S3-03 Infineon Technologies INFNS10775-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
363+62.29 грн
Мінімальне замовлення: 363
SHIELDBTS70041EPZTOBO1 SHIELDBTS70041EPZTOBO1 Infineon Technologies Infineon-PROFET_2_12V_Grade0-ProductBrief-v01_00-EN.pdf?fileId=5546d462712ef9b701715a7bfa906379 Description: PROFET+2 12V GRADE0 BTS7004-1EP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7004-1EPZ
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+6914.42 грн
IPB80N06S2H5AUMA1 Infineon Technologies Description: IC MOSFET N-CH TO263-3
товар відсутній
IPB180N06S4H1ATMA2 IPB180N06S4H1ATMA2 Infineon Technologies Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6667 шт:
термін постачання 21-31 дні (днів)
1+357.94 грн
10+ 228.99 грн
100+ 163.39 грн
500+ 127 грн
BCR129WH6327 BCR129WH6327 Infineon Technologies INFNS17180-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR 129 E6327 BCR 129 E6327 Infineon Technologies INFNS17180-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
8362+2.91 грн
Мінімальне замовлення: 8362
BCR129FE6327 BCR129FE6327 Infineon Technologies INFNS11710-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
10377+2.1 грн
Мінімальне замовлення: 10377
BCR129SE6327 BCR129SE6327 Infineon Technologies INFNS17180-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Active
товар відсутній
BCR129E6327HTSA1 BCR129E6327HTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR129WH6327XTSA1 BCR129WH6327XTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR129SH6327XTSA1 BCR129SH6327XTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
товар відсутній
BCR 129F E6327 BCR 129F E6327 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR 129L3 E6327 BCR 129L3 E6327 Infineon Technologies BCR129%20%282006%29.pdf Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR129SE6327HTSA1 BCR129SE6327HTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
товар відсутній
BCR 129T E6327 BCR 129T E6327 Infineon Technologies BCR129%20%282006%29.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR129WE6327HTSA1 BCR129WE6327HTSA1 Infineon Technologies bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BF771E6327HTSA1 BF771E6327HTSA1 Infineon Technologies BF%20771.pdf Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 15151 шт:
термін постачання 21-31 дні (днів)
12+28.01 грн
14+ 21.8 грн
25+ 19.93 грн
100+ 13.91 грн
250+ 12.61 грн
500+ 10.43 грн
1000+ 7.7 грн
Мінімальне замовлення: 12
BAV199E6359 BAV199E6359 Infineon Technologies INFNS10745-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER, 2 ELEMENT, 0.2A, 80V
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товар відсутній
S6E2C39L0AGL2000A S6E2C39L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 216LQFP
товар відсутній
S6E2C19L0AGL2000A S6E2C19L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 216LQFP
товар відсутній
S6E2C1AL0AGL2000A S6E2C1AL0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 216LQFP
товар відсутній
S6E2C28L0AGL2000A S6E2C28L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 216LQFP
товар відсутній
S6E2C48L0AGL2000A S6E2C48L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 216LQFP
товар відсутній
S6E2C49L0AGL2000A S6E2C49L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 216LQFP
товар відсутній
S6E2C58L0AGL2000A S6E2C58L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 216LQFP
товар відсутній
BTN7970S INFNS11665-1.pdf?t.download=true&u=5oefqw
BTN7970S
Виробник: Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 90A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Technology: DMOS
Supplier Device Package: P-TO220-7-11
Motor Type - Stepper: Unipolar
Grade: Automotive
Part Status: Obsolete
на замовлення 5755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
70+309.37 грн
Мінімальне замовлення: 70
TDA7110FHTMA1 fundamentals-of-power-semiconductors
TDA7110FHTMA1
Виробник: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
TDA7110FHTMA1 fundamentals-of-power-semiconductors
TDA7110FHTMA1
Виробник: Infineon Technologies
Description: RF TX IC ASK 433-435MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 11dBm
Applications: Remote Control, RKE, Security Systems
Current - Transmitting: 21mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
BSZ076N06NS3G INFNS15383-1.pdf?t.download=true&u=5oefqw
BSZ076N06NS3G
Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
товар відсутній
BSZ0702LSATMA1 Infineon-BSZ0702LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708b86789613d0
BSZ0702LSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 17A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
товар відсутній
EVALPSIRS200XTOBO1 Infineon-EVAL-PS-IRS200x-UserManual-v01_00-EN.pdf?fileId=5546d46269e1c019016ae54769b13bd6
EVALPSIRS200XTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: PSIRS200X
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+14414.77 грн
IRL6372TRPBF irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579
IRL6372TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+26.06 грн
8000+ 23.9 грн
Мінімальне замовлення: 4000
IRL6372TRPBF irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579
IRL6372TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+63.03 грн
10+ 49.68 грн
100+ 38.61 грн
500+ 30.72 грн
1000+ 25.02 грн
2000+ 23.55 грн
Мінімальне замовлення: 5
IRL60SC216ARMA1 Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea
IRL60SC216ARMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товар відсутній
IRL60SC216ARMA1 Infineon-IRL60SC216-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fc5f90cea
IRL60SC216ARMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 324A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 324A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
товар відсутній
PMB8870V1.1 PMB8870.pdf?t.download=true&u=ovmfp3
Виробник: Infineon Technologies
Description: S-GOLD GSM/E-GPRS BASEBAND IC
Packaging: Bulk
на замовлення 206000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
27+796.05 грн
Мінімальне замовлення: 27
MB90553BPMC-G-329-JNE1
Виробник: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
MB90553BPMC-G-353-JNE1
MB90553BPMC-G-353-JNE1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 83
DigiKey Programmable: Not Verified
товар відсутній
MB90553BPMC-G-373E1
MB90553BPMC-G-373E1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: I²C, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
товар відсутній
IPT65R105G7XTMA1 Infineon-IPT65R105G7-DS-v02_01-EN.pdf?fileId=5546d46253f6505701541902315e4f23
IPT65R105G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 24A 8HSOF
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+489.44 грн
10+ 426.35 грн
IPP530N15N3GXKSA1 Infineon-IPD530N15N3-DS-v02_06-en.pdf?fileId=db3a30432662379201266a1f6dd2227c
IPP530N15N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO220-3
товар відсутній
BGSX22G2A10E6327XTSA1 Infineon-BGSX22G2A10-PQR-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f4dbd8964789
BGSX22G2A10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH DPDT ATSLP10-2
товар відсутній
BTT61002ERAXUMA1 Infineon-BTT6100-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21e7e7570d6e
BTT61002ERAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товар відсутній
BTT60502ERAXUMA1 Infineon-BTT6050-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21d599df0d6a
BTT60502ERAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+139.71 грн
Мінімальне замовлення: 3000
AUIRFC8408TR
Виробник: Infineon Technologies
Description: MOSFET N-CH SMD D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
CY7C1361KVE33-133AXM 5047
CY7C1361KVE33-133AXM
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TC)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
на замовлення 126 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+538.46 грн
ESD208B102ELSE6327XTSA1 ESD208-B1-02.pdf
ESD208B102ELSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC TSSLP-2-3
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 2276984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6918+2.87 грн
Мінімальне замовлення: 6918
ESD3V3XU1USE6327 INFNS17313-1.pdf?t.download=true&u=5oefqw
ESD3V3XU1USE6327
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 11VC TSSLP-2-1
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V (Typ)
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6918+2.87 грн
Мінімальне замовлення: 6918
ESD3V3U1U02LSE6327XTSA1 INFNS15393-1.pdf?t.download=true&u=5oefqw
ESD3V3U1U02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC TSSLP-2-1
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
на замовлення 918102 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4157+5.03 грн
Мінімальне замовлення: 4157
ESD18VU1B02LSE6327XTSA1 ESD18VU1B.pdf
ESD18VU1B02LSE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 18.5VWM 17VC TSSLP-2-1
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
на замовлення 13559 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4157+5.01 грн
Мінімальне замовлення: 4157
BAR9002ELSE6327XTSA1 INFNS19426-1.pdf?t.download=true&u=5oefqw
BAR9002ELSE6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSSLP-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSSLP-2-3
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 50197 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
24+13.23 грн
37+ 8.32 грн
42+ 7.22 грн
100+ 5.63 грн
250+ 5.09 грн
500+ 4.76 грн
1000+ 4.42 грн
2500+ 4.14 грн
5000+ 3.97 грн
Мінімальне замовлення: 24
IPP052NE7N3 G
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
товар відсутній
TC275TP64F200NDCLXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC275TP64F200NDCLXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
товар відсутній
TC275TP64F200NDCLXUMA1 TC270_TC275_TC277_v1.2_4-4-19.pdf
TC275TP64F200NDCLXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
товар відсутній
TC297TX128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TX128F300NBCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.7M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 263
DigiKey Programmable: Not Verified
товар відсутній
TC297TX128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TX128F300NBCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.7M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 263
DigiKey Programmable: Not Verified
товар відсутній
TC234LX32F200FABKXUMA1 TriCore_Family_BR-2016_web.pdf?fileId=5546d46159d9a237015a127ab33e0137
TC234LX32F200FABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, Ethernet, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+2058.92 грн
Мінімальне замовлення: 1000
TT210N12KOFHPSA1 TT210N.pdf
TT210N12KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6600A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 261 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+9056.6 грн
Мінімальне замовлення: 3
IPP100N04S303AKSA1 IPx100N04S3-03.pdf
IPP100N04S303AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO220-3
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
148+152.35 грн
Мінімальне замовлення: 148
IPI100N04S4H2AKSA1 IPx100N04S4-H2.pdf
IPI100N04S4H2AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 25 V
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
484+44.54 грн
Мінімальне замовлення: 484
IPI100N04S3-03 INFNS10775-1.pdf?t.download=true&u=5oefqw
IPI100N04S3-03
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
363+62.29 грн
Мінімальне замовлення: 363
SHIELDBTS70041EPZTOBO1 Infineon-PROFET_2_12V_Grade0-ProductBrief-v01_00-EN.pdf?fileId=5546d462712ef9b701715a7bfa906379
SHIELDBTS70041EPZTOBO1
Виробник: Infineon Technologies
Description: PROFET+2 12V GRADE0 BTS7004-1EP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7004-1EPZ
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6914.42 грн
IPB80N06S2H5AUMA1
Виробник: Infineon Technologies
Description: IC MOSFET N-CH TO263-3
товар відсутній
IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
IPB180N06S4H1ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6667 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+357.94 грн
10+ 228.99 грн
100+ 163.39 грн
500+ 127 грн
BCR129WH6327 INFNS17180-1.pdf?t.download=true&u=5oefqw
BCR129WH6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR 129 E6327 INFNS17180-1.pdf?t.download=true&u=5oefqw
BCR 129 E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8362+2.91 грн
Мінімальне замовлення: 8362
BCR129FE6327 INFNS11710-1.pdf?t.download=true&u=5oefqw
BCR129FE6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10377+2.1 грн
Мінімальне замовлення: 10377
BCR129SE6327 INFNS17180-1.pdf?t.download=true&u=5oefqw
BCR129SE6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Active
товар відсутній
BCR129E6327HTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129E6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR129WH6327XTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129WH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR129SH6327XTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129SH6327XTSA1
Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
товар відсутній
BCR 129F E6327 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR 129F E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR 129L3 E6327 BCR129%20%282006%29.pdf
BCR 129L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR129SE6327HTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129SE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
товар відсутній
BCR 129T E6327 BCR129%20%282006%29.pdf
BCR 129T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BCR129WE6327HTSA1 bcr129series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143f7ab7820287
BCR129WE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
товар відсутній
BF771E6327HTSA1 BF%20771.pdf
BF771E6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 15151 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+28.01 грн
14+ 21.8 грн
25+ 19.93 грн
100+ 13.91 грн
250+ 12.61 грн
500+ 10.43 грн
1000+ 7.7 грн
Мінімальне замовлення: 12
BAV199E6359 INFNS10745-1.pdf?t.download=true&u=5oefqw
BAV199E6359
Виробник: Infineon Technologies
Description: RECTIFIER, 2 ELEMENT, 0.2A, 80V
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT23-3-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
товар відсутній
S6E2C39L0AGL2000A download
S6E2C39L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 216LQFP
товар відсутній
S6E2C19L0AGL2000A download
S6E2C19L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 216LQFP
товар відсутній
S6E2C1AL0AGL2000A download
S6E2C1AL0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 216LQFP
товар відсутній
S6E2C28L0AGL2000A download
S6E2C28L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 216LQFP
товар відсутній
S6E2C48L0AGL2000A download
S6E2C48L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 216LQFP
товар відсутній
S6E2C49L0AGL2000A download
S6E2C49L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 216LQFP
товар відсутній
S6E2C58L0AGL2000A download
S6E2C58L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 216LQFP
товар відсутній
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