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IPP120N06S403AKSA1 IPP120N06S403AKSA1 Infineon Technologies Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
365+57.31 грн
Мінімальне замовлення: 365
IPP120N06S402AKSA1 IPP120N06S402AKSA1 Infineon Technologies IPx120N06S4-02.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
на замовлення 22700 шт:
термін постачання 21-31 дні (днів)
306+68.49 грн
Мінімальне замовлення: 306
IPP120N06S402AKSA2 IPP120N06S402AKSA2 Infineon Technologies IPx120N06S4-02.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12852 шт:
термін постачання 21-31 дні (днів)
306+68.49 грн
Мінімальне замовлення: 306
TLS805B1LDV50XUMA1 TLS805B1LDV50XUMA1 Infineon Technologies Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247 Description: IC REG LINEAR 5V 50MA TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+44.66 грн
10000+ 41.39 грн
Мінімальне замовлення: 5000
SAF-XC164TM-8F40FAA SAF-XC164TM-8F40FAA Infineon Technologies INFNS10464-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 64KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 1018 шт:
термін постачання 21-31 дні (днів)
61+348.06 грн
Мінімальне замовлення: 61
SAF-XC164CM-4F20FAA SAF-XC164CM-4F20FAA Infineon Technologies INFNS10522-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 32KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Part Status: Active
Number of I/O: 47
товар відсутній
SAF-XC164N-8F40FBB SAF-XC164N-8F40FBB Infineon Technologies INFNS10159-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT 64KB FLASH 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
43+494.83 грн
Мінімальне замовлення: 43
SAFXC164TM16F20FBA SAFXC164TM16F20FBA Infineon Technologies INFNS10464-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT FLASH MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: ASC, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 772 шт:
термін постачання 21-31 дні (днів)
42+500.43 грн
Мінімальне замовлення: 42
SAF-XC164CM-16F40F-BA SAF-XC164CM-16F40F-BA Infineon Technologies INFNS10522-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT FLASH MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
товар відсутній
SAFC164CM4EFABFXUMA1 SAFC164CM4EFABFXUMA1 Infineon Technologies INFNS03570-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-TQFP-64-4
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1314 шт:
термін постачання 21-31 дні (днів)
23+997.96 грн
Мінімальне замовлення: 23
SAF-XC164SM-8F40FAA Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 64TQFP
товар відсутній
XC164CM8F40FAAFXUMA1 XC164CM8F40FAAFXUMA1 Infineon Technologies xc164cm_ds_v1.4_2007_03.pdf?fileId=db3a304412b407950112b40c0f3c0a1b&ack=t Description: IC MCU 16BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Number of I/O: 47
DigiKey Programmable: Not Verified
товар відсутній
SAF-XC164S-8F40FBB Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
товар відсутній
BTT60302ERAXUMA1 BTT60302ERAXUMA1 Infineon Technologies Infineon-BTT6030-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa44260d82 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+149.91 грн
Мінімальне замовлення: 3000
SIGC07T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
товар відсутній
BC858BE6327 BC858BE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 121603 шт:
термін постачання 21-31 дні (днів)
7818+2.84 грн
Мінімальне замовлення: 7818
BC858BWH6327 BC858BWH6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
товар відсутній
SSP08N50C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
товар відсутній
SPI08N50C3 SPI08N50C3 Infineon Technologies INFNS14195-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
SPI08N50C3IN Infineon Technologies INFNS14202-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
SPI08N50C3XK SPI08N50C3XK Infineon Technologies Infineon-SPP_I_A08N50C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637ea8fa3006d Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
CY8C24423A-12PVXET CY8C24423A-12PVXET Infineon Technologies Infineon-CY8C24223A_CY8C24423A_Automotive_Extended_Temperature_PSoC_Programmable_System-on-Chip_Datasheet-AdditionalTechnicalInformation-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec674eb3ca9&utm_source=cypress&utm_medium=refe Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Bulk
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 2038 шт:
термін постачання 21-31 дні (днів)
77+279.2 грн
Мінімальне замовлення: 77
SGB02N120CT SGB02N120CT Infineon Technologies Infineon-SGB02N120-DS-v02_03-en.pdf?fileId=db3a304412b407950112b42799e03c76 Description: IGBT, 2A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/260ns
Switching Energy: 220µJ
Test Condition: 800V, 2A, 91Ohm, 15V
Gate Charge: 11 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.6 A
Power - Max: 62 W
товар відсутній
FS35R12KE3GBOSA1 Infineon Technologies Infineon-FS35R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311aa45378 Description: IGBT MOD 1200V 55A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
TLE4206-2GXUMA2 TLE4206-2GXUMA2 Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: BRUSH DC MOTOR CONTROLLER, 1A
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
товар відсутній
TLE4206-4GXUMA2 TLE4206-4GXUMA2 Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: BRUSH DC MOTOR CONTROLLER, 1A
на замовлення 2189 шт:
термін постачання 21-31 дні (днів)
257+85.79 грн
Мінімальне замовлення: 257
TLE4206G TLE4206G Infineon Technologies Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40 Description: BRUSH DC MOTOR CONTROLLER, 1A
товар відсутній
TLE62512G TLE62512G Infineon Technologies Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER HALF 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14-13
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
товар відсутній
BCR169E6327 BCR169E6327 Infineon Technologies INFNS11715-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 186000 шт:
термін постачання 21-31 дні (днів)
7397+2.85 грн
Мінімальне замовлення: 7397
BCR169WH6327 BCR169WH6327 Infineon Technologies INFNS17187-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
7123+2.91 грн
Мінімальне замовлення: 7123
BCR 162 E6327 Infineon Technologies INFNS11631-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
8013+2.91 грн
Мінімальне замовлення: 8013
BCR162E6327 BCR162E6327 Infineon Technologies INFNS11631-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
BCR166 BCR166 Infineon Technologies INFNS17140-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR166WE6327 BCR166WE6327 Infineon Technologies SIEMD095-691.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR169S BCR169S Infineon Technologies INFNS17187-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR166E6327 BCR166E6327 Infineon Technologies SIEMD095-687.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR169SH6327 BCR169SH6327 Infineon Technologies Infineon-BCR169SERIES-DS-v01_01-en[1].pdf?fileId=db3a30431428a37301144063498902f9 Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR166W BCR166W Infineon Technologies INFNS17140-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
CY7C1470BV25-167BZXC CY7C1470BV25-167BZXC Infineon Technologies CY7C1470,72,74BV25.pdf Description: IC SRAM 72MBIT PAR 165FBGA
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
3+8193.4 грн
Мінімальне замовлення: 3
CY7C1470V25-167AXC CY7C1470V25-167AXC Infineon Technologies Description: IC SRAM 72MBIT PAR 100TQFP
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
3+8496.35 грн
Мінімальне замовлення: 3
CY7C1470BV33-200BZC CY7C1470BV33-200BZC Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
3+9103.8 грн
Мінімальне замовлення: 3
CY7C1470BV25-167BZC CY7C1470BV25-167BZC Infineon Technologies CY7C1470,72,74BV25.pdf Description: IC SRAM 72MBIT PAR 165FBGA
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
3+9103.8 грн
Мінімальне замовлення: 3
CY7C1470V33-167BZXI CY7C1470V33-167BZXI Infineon Technologies CY7C1470,2,4V33%20RevJ.pdf Description: IC SRAM 72MBIT PAR 165FBGA
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
3+9332.05 грн
Мінімальне замовлення: 3
BSO083N03N03MSG Infineon Technologies Description: N-CHANNEL POWER MOSFET
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1876+12.01 грн
Мінімальне замовлення: 1876
IRF7413TRPBF-1 IRF7413TRPBF-1 Infineon Technologies IRF7413PbF-1_11-19-13.pdf Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товар відсутній
TDA4862HKLA1 TDA4862HKLA1 Infineon Technologies Infineon-PFC_DCMICTDA4862G-DS-v02_00-en.pdf?fileId=db3a304412b407950112b417ffae24a3 Description: POWER FACTOR CONTROLLER
Packaging: Bulk
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
520+42.08 грн
Мінімальне замовлення: 520
IPP45N06S409AKSA1 IPP45N06S409AKSA1 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
799+27.2 грн
Мінімальне замовлення: 799
IPP45N06S4L08AKSA1 IPP45N06S4L08AKSA1 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 2538 шт:
термін постачання 21-31 дні (днів)
799+27.2 грн
Мінімальне замовлення: 799
IPI45N06S409AKSA2 IPI45N06S409AKSA2 Infineon Technologies IPx45N06S4-09.pdf Description: MOSFET N-CH 60V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
IPW60R120P7 IPW60R120P7 Infineon Technologies INFN-S-A0006145425-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
товар відсутній
FP150R12KT4B11BPSA1 FP150R12KT4B11BPSA1 Infineon Technologies Infineon-FP150R12KT4_B11-DS-v03_00-EN.pdf?fileId=5546d4625b62cd8a015baa19ee2e1409 Description: IGBT MODULE 1200V 150A
товар відсутній
SAK-TC1367A-264F180EBAA Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 451 шт:
термін постачання 21-31 дні (днів)
30+701.01 грн
Мінімальне замовлення: 30
IPD036N04LGATMA1 IPD036N04LGATMA1 Infineon Technologies Infineon-IPD036N04L-DS-v01_00-en.pdf?fileId=db3a3043163797a6011643476a6505a5 Description: MOSFET N-CH 40V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
2500+38.44 грн
Мінімальне замовлення: 2500
BF5020WH6327 Infineon Technologies INFNS13463-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
товар відсутній
SPI11N65C3IN Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товар відсутній
ND350N12KHPSA1 ND350N12KHPSA1 Infineon Technologies Infineon-ND350N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b431306b53c9 Description: DIODE GP 1.2KV 350A BG-PB50ND-1
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+12623.52 грн
ND350N16KHPSA1 Infineon Technologies Infineon-ND350N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b431306b53c9 Description: DIODE GP 1.6KV 350A PB50ND-1
товар відсутній
BAT 17-05W H6327 BAT 17-05W H6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
3718+5.87 грн
Мінімальне замовлення: 3718
BCX71GE6327 BCX71GE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
6869+2.84 грн
Мінімальне замовлення: 6869
BCX71JE6327 BCX71JE6327 Infineon Technologies INFNS11623-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 54500 шт:
термін постачання 21-31 дні (днів)
7454+3.11 грн
Мінімальне замовлення: 7454
IPP120N06S403AKSA1 Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc
IPP120N06S403AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
365+57.31 грн
Мінімальне замовлення: 365
IPP120N06S402AKSA1 IPx120N06S4-02.pdf
IPP120N06S402AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
на замовлення 22700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
306+68.49 грн
Мінімальне замовлення: 306
IPP120N06S402AKSA2 IPx120N06S4-02.pdf
IPP120N06S402AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
306+68.49 грн
Мінімальне замовлення: 306
TLS805B1LDV50XUMA1 Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247
TLS805B1LDV50XUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 50MA TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+44.66 грн
10000+ 41.39 грн
Мінімальне замовлення: 5000
SAF-XC164TM-8F40FAA INFNS10464-1.pdf?t.download=true&u=5oefqw
SAF-XC164TM-8F40FAA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 1018 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
61+348.06 грн
Мінімальне замовлення: 61
SAF-XC164CM-4F20FAA INFNS10522-1.pdf?t.download=true&u=5oefqw
SAF-XC164CM-4F20FAA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 32KB FLASH 64TQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Part Status: Active
Number of I/O: 47
товар відсутній
SAF-XC164N-8F40FBB INFNS10159-1.pdf?t.download=true&u=5oefqw
SAF-XC164N-8F40FBB
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
43+494.83 грн
Мінімальне замовлення: 43
SAFXC164TM16F20FBA INFNS10464-1.pdf?t.download=true&u=5oefqw
SAFXC164TM16F20FBA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: ASC, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
на замовлення 772 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
42+500.43 грн
Мінімальне замовлення: 42
SAF-XC164CM-16F40F-BA INFNS10522-1.pdf?t.download=true&u=5oefqw
SAF-XC164CM-16F40F-BA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
товар відсутній
SAFC164CM4EFABFXUMA1 INFNS03570-1.pdf?t.download=true&u=5oefqw
SAFC164CM4EFABFXUMA1
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-TQFP-64-4
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1314 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
23+997.96 грн
Мінімальне замовлення: 23
SAF-XC164SM-8F40FAA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64TQFP
товар відсутній
XC164CM8F40FAAFXUMA1 xc164cm_ds_v1.4_2007_03.pdf?fileId=db3a304412b407950112b40c0f3c0a1b&ack=t
XC164CM8F40FAAFXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-64-8
Number of I/O: 47
DigiKey Programmable: Not Verified
товар відсутній
SAF-XC164S-8F40FBB
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-100-5
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
товар відсутній
BTT60302ERAXUMA1 Infineon-BTT6030-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa44260d82
BTT60302ERAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+149.91 грн
Мінімальне замовлення: 3000
SIGC07T60NCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
товар відсутній
BC858BE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC858BE6327
Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
на замовлення 121603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7818+2.84 грн
Мінімальне замовлення: 7818
BC858BWH6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC858BWH6327
Виробник: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
товар відсутній
SSP08N50C3
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
товар відсутній
SPI08N50C3 INFNS14195-1.pdf?t.download=true&u=5oefqw
SPI08N50C3
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
SPI08N50C3IN INFNS14202-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
SPI08N50C3XK Infineon-SPP_I_A08N50C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637ea8fa3006d
SPI08N50C3XK
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній
CY8C24423A-12PVXET Infineon-CY8C24223A_CY8C24423A_Automotive_Extended_Temperature_PSoC_Programmable_System-on-Chip_Datasheet-AdditionalTechnicalInformation-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec674eb3ca9&utm_source=cypress&utm_medium=refe
CY8C24423A-12PVXET
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Bulk
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Verified
на замовлення 2038 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
77+279.2 грн
Мінімальне замовлення: 77
SGB02N120CT Infineon-SGB02N120-DS-v02_03-en.pdf?fileId=db3a304412b407950112b42799e03c76
SGB02N120CT
Виробник: Infineon Technologies
Description: IGBT, 2A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/260ns
Switching Energy: 220µJ
Test Condition: 800V, 2A, 91Ohm, 15V
Gate Charge: 11 nC
Part Status: Active
Current - Collector (Ic) (Max): 6.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.6 A
Power - Max: 62 W
товар відсутній
FS35R12KE3GBOSA1 Infineon-FS35R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311aa45378
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 55A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
товар відсутній
TLE4206-2GXUMA2 Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206-2GXUMA2
Виробник: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER, 1A
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14-22
Motor Type - AC, DC: Servo DC
Part Status: Active
товар відсутній
TLE4206-4GXUMA2 Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206-4GXUMA2
Виробник: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER, 1A
на замовлення 2189 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
257+85.79 грн
Мінімальне замовлення: 257
TLE4206G Infineon-TLE4206-2G-DS-v01_03-EN.pdf?fileId=5546d4625a888733015a8a3f58793f40
TLE4206G
Виробник: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER, 1A
товар відсутній
TLE62512G Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE62512G
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14-13
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
товар відсутній
BCR169E6327 INFNS11715-1.pdf?t.download=true&u=5oefqw
BCR169E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 186000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7397+2.85 грн
Мінімальне замовлення: 7397
BCR169WH6327 INFNS17187-1.pdf?t.download=true&u=5oefqw
BCR169WH6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7123+2.91 грн
Мінімальне замовлення: 7123
BCR 162 E6327 INFNS11631-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8013+2.91 грн
Мінімальне замовлення: 8013
BCR162E6327 INFNS11631-1.pdf?t.download=true&u=5oefqw
BCR162E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
BCR166 INFNS17140-1.pdf?t.download=true&u=5oefqw
BCR166
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR166WE6327 SIEMD095-691.pdf?t.download=true&u=5oefqw
BCR166WE6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR169S INFNS17187-1.pdf?t.download=true&u=5oefqw
BCR169S
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR166E6327 SIEMD095-687.pdf?t.download=true&u=5oefqw
BCR166E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
BCR169SH6327 Infineon-BCR169SERIES-DS-v01_01-en[1].pdf?fileId=db3a30431428a37301144063498902f9
BCR169SH6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товар відсутній
BCR166W INFNS17140-1.pdf?t.download=true&u=5oefqw
BCR166W
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
CY7C1470BV25-167BZXC CY7C1470,72,74BV25.pdf
CY7C1470BV25-167BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+8193.4 грн
Мінімальне замовлення: 3
CY7C1470V25-167AXC
CY7C1470V25-167AXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 100TQFP
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+8496.35 грн
Мінімальне замовлення: 3
CY7C1470BV33-200BZC download
CY7C1470BV33-200BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
на замовлення 153 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+9103.8 грн
Мінімальне замовлення: 3
CY7C1470BV25-167BZC CY7C1470,72,74BV25.pdf
CY7C1470BV25-167BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+9103.8 грн
Мінімальне замовлення: 3
CY7C1470V33-167BZXI CY7C1470,2,4V33%20RevJ.pdf
CY7C1470V33-167BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+9332.05 грн
Мінімальне замовлення: 3
BSO083N03N03MSG
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1876+12.01 грн
Мінімальне замовлення: 1876
IRF7413TRPBF-1 IRF7413PbF-1_11-19-13.pdf
IRF7413TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товар відсутній
TDA4862HKLA1 Infineon-PFC_DCMICTDA4862G-DS-v02_00-en.pdf?fileId=db3a304412b407950112b417ffae24a3
TDA4862HKLA1
Виробник: Infineon Technologies
Description: POWER FACTOR CONTROLLER
Packaging: Bulk
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
520+42.08 грн
Мінімальне замовлення: 520
IPP45N06S409AKSA1 IPx45N06S4-09.pdf
IPP45N06S409AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
799+27.2 грн
Мінімальне замовлення: 799
IPP45N06S4L08AKSA1 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPP45N06S4L08AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
на замовлення 2538 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
799+27.2 грн
Мінімальне замовлення: 799
IPI45N06S409AKSA2 IPx45N06S4-09.pdf
IPI45N06S409AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
IPW60R120P7 INFN-S-A0006145425-1.pdf?t.download=true&u=5oefqw
IPW60R120P7
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
товар відсутній
FP150R12KT4B11BPSA1 Infineon-FP150R12KT4_B11-DS-v03_00-EN.pdf?fileId=5546d4625b62cd8a015baa19ee2e1409
FP150R12KT4B11BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 150A
товар відсутній
SAK-TC1367A-264F180EBAA
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 451 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
30+701.01 грн
Мінімальне замовлення: 30
IPD036N04LGATMA1 Infineon-IPD036N04L-DS-v01_00-en.pdf?fileId=db3a3043163797a6011643476a6505a5
IPD036N04LGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+38.44 грн
Мінімальне замовлення: 2500
BF5020WH6327 INFNS13463-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 100nA
Mounting Type: Surface Mount
Configuration: N-Channel
Gain: 32dB
Technology: MOSFET
Noise Figure: 1.2dB
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
товар відсутній
SPI11N65C3IN
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
товар відсутній
ND350N12KHPSA1 Infineon-ND350N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b431306b53c9
ND350N12KHPSA1
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 350A BG-PB50ND-1
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+12623.52 грн
ND350N16KHPSA1 Infineon-ND350N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b431306b53c9
Виробник: Infineon Technologies
Description: DIODE GP 1.6KV 350A PB50ND-1
товар відсутній
BAT 17-05W H6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT 17-05W H6327
Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3718+5.87 грн
Мінімальне замовлення: 3718
BCX71GE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCX71GE6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6869+2.84 грн
Мінімальне замовлення: 6869
BCX71JE6327 INFNS11623-1.pdf?t.download=true&u=5oefqw
BCX71JE6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 54500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7454+3.11 грн
Мінімальне замовлення: 7454
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