Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139428) > Сторінка 2295 з 2324
Фото | Назва | Виробник | Інформація |
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IPP057N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 115W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
на замовлення 233 шт: термін постачання 21-30 дні (днів) |
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XMC1403Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 42 Number of 16bit timers: 16 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: CAN x2; GPIO; USIC x4 Integrated circuit features: EEPROM emulation; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1403Q048X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-48 Memory: 16kB SRAM; 200kB FLASH Number of inputs/outputs: 42 Number of 16bit timers: 16 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: CAN x2; GPIO; USIC x4 Integrated circuit features: EEPROM emulation; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1403Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Memory: 16kB SRAM; 64kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: CAN x2; GPIO; USIC x4 Integrated circuit features: EEPROM emulation; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1403Q064X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Memory: 16kB SRAM; 128kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: CAN x2; GPIO; USIC x4 Integrated circuit features: EEPROM emulation; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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XMC1403Q064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH Type of integrated circuit: ARM microcontroller Case: PG-VQFN-64 Memory: 16kB SRAM; 200kB FLASH Number of inputs/outputs: 55 Number of 16bit timers: 16 Supply voltage: 1.8...5.5V DC Operating temperature: -40...105°C Interface: CAN x2; GPIO; USIC x4 Integrated circuit features: EEPROM emulation; RTC; watchdog Number of A/D channels: 12 Kind of architecture: Cortex M0 Family: XMC1400 |
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IAUC120N06S5L032ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 364A Power dissipation: 94W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 51.5nC Kind of package: reel; tape Kind of channel: enhanced |
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IAUC120N06S5N017ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 757A Power dissipation: 167W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 95.9nC Kind of package: reel; tape Kind of channel: enhanced |
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IRFP4868PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 300V Drain current: 70A Power dissipation: 517W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
на замовлення 295 шт: термін постачання 21-30 дні (днів) |
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1EDF5673FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16 Technology: EiceDRIVER™; GaN Case: PG-DSO-16 Mounting: SMD Kind of package: reel; tape Output current: -8...4A Topology: single transistor Integrated circuit features: galvanically isolated Number of channels: 1 Kind of integrated circuit: gate driver; high-side Supply voltage: 3...3.5V; 6.5...20V Voltage class: 650V Type of integrated circuit: driver |
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IPP023N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 90A Power dissipation: 167W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IDH02G120C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.4V Max. forward impulse current: 37A Leakage current: 1.2µA Power dissipation: 75W Technology: CoolSiC™ 5G; SiC Kind of package: tube |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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IDH02G65C5 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 2A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 22A Leakage current: 0.4µA Power dissipation: 36W Technology: CoolSiC™ 5G; SiC Kind of package: tube Heatsink thickness: 1.17...137mm |
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IPB015N08N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7 Case: PG-TO263-7 Mounting: SMD Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 180A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar |
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XC87816FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64 Type of integrated circuit: microcontroller 8051 Clock frequency: 26.7MHz Interface: SPI; UART Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 10 Memory: 3kB SRAM; 64kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 2 Number of input capture channels: 2 |
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IPD60R400CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.3A Pulsed drain current: 30A Power dissipation: 112W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhanced |
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IPB65R310CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3 Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 104.2W Polarisation: unipolar Case: PG-TO263-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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AIKW20N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 166W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 32ns Turn-off time: 241ns Features of semiconductor devices: integrated anti-parallel diode |
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IRLR8103VTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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T360N22TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 2.2kV Max. load current: 550A Load current: 360A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 5kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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T560N14TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 1.4kV Max. load current: 809A Load current: 559A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 8kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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T560N16TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 1.6kV Max. load current: 809A Load current: 559A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 8kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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T560N18TOFXPSA1 | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA Type of thyristor: hockey-puck Max. off-state voltage: 1.8kV Max. load current: 809A Load current: 559A Gate current: 200mA Case: BG-T4814K0-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 8kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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T860N36TOFVT | INFINEON TECHNOLOGIES |
Category: Button thyristors Description: Thyristor: hockey-puck; 3.6kV; Ifmax: 2kA; 860A; Igt: 250mA; in-tray Type of thyristor: hockey-puck Max. off-state voltage: 3.6kV Max. load current: 2kA Load current: 860A Gate current: 250mA Case: BG-T7526K-1 Mounting: Press-Pack Kind of package: in-tray Max. forward impulse current: 18kA Features of semiconductor devices: phase controlled thyristor (PCT) |
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IRFB4127PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 76A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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IRFS4410TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 96A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IPA70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Pulsed drain current: 34A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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IPN70R360P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 7.2W Case: PG-SOT223 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 16.4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPS70R360P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPAN70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 468 шт: термін постачання 21-30 дні (днів) |
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IPSA70R360P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Gate charge: 16.4nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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AUIPS72211RTRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; DPAK5; reel; 2.5W Type of integrated circuit: power switch Kind of integrated circuit: high-side Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK5 On-state resistance: 35mΩ Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 2.5W Application: automotive industry |
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AUIPS7081RTRL | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK5 On-state resistance: 70mΩ Kind of package: reel Technology: Classic PROFET Operating temperature: -40...150°C Power dissipation: 2.5W Application: automotive industry |
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IRFR120NTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK Case: DPAK Mounting: SMD Kind of package: reel Power dissipation: 39W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 9.1A Drain-source voltage: 100V Technology: HEXFET® Kind of channel: enhanced |
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BSC0910NDIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Power dissipation: 2.5W Case: PG-TISON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced |
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IPD65R250C6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.25Ω Power dissipation: 208.3W Technology: CoolMOS™ Polarisation: unipolar Drain current: 16.1A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V |
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IPS65R950C6AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL Mounting: THT Case: IPAK SL Power dissipation: 37W Polarisation: unipolar Technology: CoolMOS™ Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET On-state resistance: 0.95Ω Gate-source voltage: ±20V |
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IPA60R450E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPB65R420CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.42Ω Power dissipation: 310W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 8.7A Type of transistor: N-MOSFET |
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IPB65R660CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.66Ω Power dissipation: 62.5W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 6A |
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IPI200N25N3GAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 88A Power dissipation: 300W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Kind of channel: enhanced |
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BSC046N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Kind of channel: enhanced |
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IRL40B209 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 293A Pulsed drain current: 1707A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.25mΩ Mounting: THT Kind of channel: enhanced |
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IRL40B212 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 179A Power dissipation: 231W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRL40B215 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 116A Power dissipation: 143W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
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IRL60B216 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhanced Features of semiconductor devices: logic level |
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TLS805B1LDVXUMA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 1.2...13.2V Output current: 0.05A Case: PG-TSON-10 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Tolerance: ±2% Input voltage: 2.75...42V |
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BCR573E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Mounting: SMD Case: SOT23 Base-emitter resistor: 10kΩ Frequency: 150MHz Collector-emitter voltage: 50V Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.33W Polarisation: bipolar Kind of transistor: BRT Base resistor: 1kΩ |
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IRFB4615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 35A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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IDB30E120ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3 Type of diode: rectifying Features of semiconductor devices: fast switching Mounting: SMD Case: TO263-3 Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode |
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IDB30E60ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 30A; TO263-3 Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: TO263-3 |
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IRF9321TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -15A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9328TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9332TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -9.8A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhanced |
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IRF9335TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.4A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRF9410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IRFML8244TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 5.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 5.4nC Kind of channel: enhanced |
на замовлення 1793 шт: термін постачання 21-30 дні (днів) |
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BSS316NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23 Mounting: SMD Case: SOT23 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.28Ω Type of transistor: N-MOSFET Drain current: 1.4A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 30V |
на замовлення 12389 шт: термін постачання 21-30 дні (днів) |
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BSD214SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Power dissipation: 0.5W Case: SOT363 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced |
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BSD316SNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.4A Power dissipation: 0.5W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhanced |
товар відсутній |
IPP057N06N3GXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
на замовлення 233 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 83.92 грн |
10+ | 74.18 грн |
15+ | 60.69 грн |
40+ | 57.7 грн |
XMC1403Q048X0064AAXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
XMC1403Q048X0200AAXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-48
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 42
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
XMC1403Q064X0064AAXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 64kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
XMC1403Q064X0128AAXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 128kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
XMC1403Q064X0200AAXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-VQFN-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Operating temperature: -40...105°C
Interface: CAN x2; GPIO; USIC x4
Integrated circuit features: EEPROM emulation; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
товар відсутній
IAUC120N06S5L032ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
IAUC120N06S5N017ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
IRFP4868PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 517W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 295 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 572.93 грн |
3+ | 406.87 грн |
6+ | 385.14 грн |
1EDF5673FXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Output current: -8...4A
Topology: single transistor
Integrated circuit features: galvanically isolated
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Supply voltage: 3...3.5V; 6.5...20V
Voltage class: 650V
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Output current: -8...4A
Topology: single transistor
Integrated circuit features: galvanically isolated
Number of channels: 1
Kind of integrated circuit: gate driver; high-side
Supply voltage: 3...3.5V; 6.5...20V
Voltage class: 650V
Type of integrated circuit: driver
товар відсутній
IPP023N04NGXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IDH02G120C5XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; PG-TO220-2; 75W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 143.64 грн |
8+ | 110.9 грн |
22+ | 104.15 грн |
250+ | 102.65 грн |
500+ | 100.41 грн |
IDH02G65C5 |
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 22A
Leakage current: 0.4µA
Power dissipation: 36W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Heatsink thickness: 1.17...137mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 2A; PG-TO220-2; 36W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 22A
Leakage current: 0.4µA
Power dissipation: 36W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Heatsink thickness: 1.17...137mm
товар відсутній
IPB015N08N5ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 375W; PG-TO263-7
Case: PG-TO263-7
Mounting: SMD
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 180A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
товар відсутній
XC87816FFI5VACFXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART; 3÷5VDC; PG-LQFP-64
Type of integrated circuit: microcontroller 8051
Clock frequency: 26.7MHz
Interface: SPI; UART
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 10
Memory: 3kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 2
Number of input capture channels: 2
товар відсутній
IPD60R400CEAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPB65R310CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
AIKW20N60CTXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 166W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 166W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 241ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
IRLR8103VTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
T360N22TOFXPSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 550A
Load current: 360A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 550A
Load current: 360A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
T560N14TOFXPSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
T560N16TOFXPSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
T560N18TOFXPSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.8kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.8kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
T860N36TOFVT |
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 3.6kV; Ifmax: 2kA; 860A; Igt: 250mA; in-tray
Type of thyristor: hockey-puck
Max. off-state voltage: 3.6kV
Max. load current: 2kA
Load current: 860A
Gate current: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 18kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Category: Button thyristors
Description: Thyristor: hockey-puck; 3.6kV; Ifmax: 2kA; 860A; Igt: 250mA; in-tray
Type of thyristor: hockey-puck
Max. off-state voltage: 3.6kV
Max. load current: 2kA
Load current: 860A
Gate current: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 18kA
Features of semiconductor devices: phase controlled thyristor (PCT)
товар відсутній
IRFB4127PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 188.82 грн |
IRFS4410TRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IPA70R360P7SXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Pulsed drain current: 34A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Pulsed drain current: 34A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 87.96 грн |
10+ | 70.43 грн |
19+ | 47.96 грн |
51+ | 44.96 грн |
IPN70R360P7SATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPS70R360P7SAKMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
IPAN70R360P7SXKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 468 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 83.92 грн |
6+ | 69.69 грн |
10+ | 62.94 грн |
17+ | 53.2 грн |
45+ | 50.95 грн |
IPSA70R360P7SAKMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 16.4nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
AUIPS72211RTRL |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; DPAK5; reel; 2.5W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 35mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; DPAK5; reel; 2.5W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 35mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
товар відсутній
AUIPS7081RTRL |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 70mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5A; Ch: 1; N-Channel; SMD; DPAK5; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
On-state resistance: 70mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
товар відсутній
IRFR120NTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Power dissipation: 39W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 9.1A
Drain-source voltage: 100V
Technology: HEXFET®
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel
Power dissipation: 39W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 9.1A
Drain-source voltage: 100V
Technology: HEXFET®
Kind of channel: enhanced
товар відсутній
BSC0910NDIATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 2.5W; PG-TISON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 2.5W
Case: PG-TISON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IPD65R250C6XTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.25Ω
Power dissipation: 208.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 16.1A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.25Ω
Power dissipation: 208.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 16.1A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
товар відсутній
IPS65R950C6AKMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL
Mounting: THT
Case: IPAK SL
Power dissipation: 37W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
товар відсутній
IPA60R450E6XKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.2A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
товар відсутній
IPB65R420CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
товар відсутній
IPB65R660CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
товар відсутній
IPI200N25N3GAKSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 88A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
BSC046N10NS3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRL40B209 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
товар відсутній
IRL40B212 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL40B215 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
IRL60B216 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
товар відсутній
TLS805B1LDVXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2...13.2V
Output current: 0.05A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 2.75...42V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷13.2V; 0.05A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 1.2...13.2V
Output current: 0.05A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 2.75...42V
товар відсутній
BCR573E6433HTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Mounting: SMD
Case: SOT23
Base-emitter resistor: 10kΩ
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.33W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 1kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Mounting: SMD
Case: SOT23
Base-emitter resistor: 10kΩ
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.33W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 1kΩ
товар відсутній
IRFB4615PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 106.4 грн |
IDB30E120ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
Case: TO263-3
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1200V; 30A; TO263-3
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: SMD
Case: TO263-3
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
товар відсутній
IDB30E60ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263-3
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263-3
товар відсутній
IRF9321TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -15A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF9328TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF9332TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.8A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhanced
товар відсутній
IRF9335TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRF9410TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній
IRFML8244TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhanced
на замовлення 1793 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 22.59 грн |
30+ | 12.66 грн |
100+ | 8.39 грн |
152+ | 5.77 грн |
417+ | 5.47 грн |
BSS316NH6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Drain current: 1.4A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Drain current: 1.4A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 30V
на замовлення 12389 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
21+ | 19.37 грн |
29+ | 13.34 грн |
50+ | 8.5 грн |
100+ | 6.86 грн |
226+ | 3.89 грн |
620+ | 3.68 грн |
1500+ | 3.6 грн |
2500+ | 3.54 грн |
BSD214SNH6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній
BSD316SNH6327XTSA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.4A
Power dissipation: 0.5W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
товар відсутній