Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139419) > Сторінка 146 з 2324
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRLS4030TRLPBF | Infineon Technologies |
 Description: MOSFET N-CH 100V 180A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V |
на замовлення 1556 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
CY7C1306CV25-167BZC | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.4V ~ 2.6V Technology: SRAM - Synchronous, QDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
|
|
CY7C1315JV18-300BZC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
 |
CY7C1423JV18-250BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 2M x 18 |
товар відсутній |
|||||||||||||||||
 |
CY7C1423JV18-267BZXCT | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Tape & Reel (TR) Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 267 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 2M x 18 |
товар відсутній |
|||||||||||||||||
 |
CY7C1480BV33-250BZI | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
на замовлення 63 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
CY8C20434-12LQXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
 |
CYONS2000-LBXC | Infineon Technologies |
Description: IC SENSOR LASER OVATION 42-QFN Packaging: Tray Package / Case: 42-BQFN Module Mounting Type: Surface Mount Supplier Device Package: 42-PQFN (8.3x8.3) Part Status: Obsolete |
товар відсутній |
|||||||||||||||||
|
|
CYONS2001-LBXC | Infineon Technologies |
Description: IC SENSOR LASER OVATION 42-QFN Packaging: Tray Package / Case: 42-BQFN Module Mounting Type: Surface Mount Supplier Device Package: 42-PQFN (8.3x8.3) Part Status: Obsolete |
товар відсутній |
|||||||||||||||||
|
|
CYONS2100-LBXC | Infineon Technologies |
Description: IC SENSOR LASER OVATION 42-QFN Packaging: Tray Package / Case: 42-BQFN Module Mounting Type: Surface Mount Supplier Device Package: 42-PQFN (8.3x8.3) Part Status: Obsolete |
товар відсутній |
|||||||||||||||||
|
|
CYONS2101-LBXC | Infineon Technologies |
Description: IC SENSOR LASER OVATION 42-QFN Packaging: Tray Package / Case: 42-BQFN Module Mounting Type: Surface Mount Supplier Device Package: 42-PQFN (8.3x8.3) Part Status: Obsolete |
товар відсутній |
|||||||||||||||||
 |
CYONS2110-LBXC | Infineon Technologies |
Description: SENSOR OPT LASER OVATION 42QFN Packaging: Tray Package / Case: 42-BQFN Module Mounting Type: Surface Mount Supplier Device Package: 42-PQFN (8.3x8.3) Part Status: Obsolete |
товар відсутній |
|||||||||||||||||
 |
CYWB0224ABM-BVXI | Infineon Technologies |
Description: IC WEST BRIDGE HS-USB 100VFBGA |
товар відсутній |
|||||||||||||||||
 |
CYWB0224ABMX-FDXIT | Infineon Technologies |
Description: IC WEST BRIDGE HS-USB 81-WLCSP |
товар відсутній |
|||||||||||||||||
|
|
CYWB0226ABMX-FDXIT | Infineon Technologies |
Description: IC WEST BRIDGE HS-USB 81-WLCSP |
товар відсутній |
|||||||||||||||||
 |
IRF1404ZGPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
товар відсутній |
|||||||||||||||||
 |
IRF7665S2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 4.1A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: DIRECTFET SB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V |
товар відсутній |
|||||||||||||||||
 |
IRF8707GTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V |
товар відсутній |
|||||||||||||||||
|
|
IRF8714GTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
товар відсутній |
|||||||||||||||||
|
|
IRF8721GTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
товар відсутній |
|||||||||||||||||
 |
IRFB3004GPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
товар відсутній |
|||||||||||||||||
|
|
IRFB3006GPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V |
товар відсутній |
|||||||||||||||||
 |
IRGI4056DPBF | Infineon Technologies |
Description: IGBT 600V 18A 34W TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 72 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A Supplier Device Package: TO-220AB Full-Pak IGBT Type: Trench Td (on/off) @ 25°C: 34ns/84ns Switching Energy: 59µJ (on), 177µJ (off) Test Condition: 400V, 9A, 22Ohm, 15V Gate Charge: 25 nC Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 27 A Power - Max: 34 W |
товар відсутній |
|||||||||||||||||
|
|
IRLB3813PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 260A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V |
на замовлення 4297 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IRF7665S2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 4.1A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric SB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: DIRECTFET SB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V |
товар відсутній |
|||||||||||||||||
|
|
IRF8707GTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V |
товар відсутній |
|||||||||||||||||
|
|
IRF8707GPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V |
товар відсутній |
|||||||||||||||||
|
|
IRF8714GPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
товар відсутній |
|||||||||||||||||
|
|
IRF8721GPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
товар відсутній |
|||||||||||||||||
 |
IRF6718L2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 61A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V Power Dissipation (Max): 4.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET L6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V |
товар відсутній |
|||||||||||||||||
|
|
IRF6718L2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 61A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V Power Dissipation (Max): 4.3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: DIRECTFET L6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V |
товар відсутній |
|||||||||||||||||
 |
AGIGA8003-004ACA | Infineon Technologies |
Description: MODUL NVRAM 4MB 100MHZ 200SODIMM Packaging: Box Package / Case: 200-SODIMM Memory Size: 4MB Memory Type: NVRAM Part Status: Obsolete Transfer Rate (Mb/s, MT/s, MHz): 100 |
товар відсутній |
|||||||||||||||||
|
|
AGIGA8004-008ACA | Infineon Technologies |
Description: MODUL NVRAM 8MB 100MHZ 200SODIMM Packaging: Box Package / Case: 200-SODIMM Memory Size: 8MB Memory Type: NVRAM Part Status: Obsolete Transfer Rate (Mb/s, MT/s, MHz): 100 |
товар відсутній |
|||||||||||||||||
|
|
AGIGA8005-016ACA | Infineon Technologies |
Description: MODULE NVRAM 16MB 200SODIMM Packaging: Box Package / Case: 200-SODIMM Memory Size: 16MB Memory Type: NVRAM Part Status: Obsolete Transfer Rate (Mb/s, MT/s, MHz): 100 |
товар відсутній |
|||||||||||||||||
|
|
AGIGA8006-032ACA | Infineon Technologies |
Description: MODULE NVRAM 32MB 200SODIMM Packaging: Box Package / Case: 200-SODIMM Memory Size: 32MB Memory Type: NVRAM Part Status: Obsolete Transfer Rate (Mb/s, MT/s, MHz): 100 |
товар відсутній |
|||||||||||||||||
 |
AGIGA8007-064ACA | Infineon Technologies |
Description: MODULE NVRAM 64MB 200SODIMM Packaging: Box Package / Case: 200-SODIMM Memory Size: 64MB Memory Type: NVRAM Part Status: Obsolete Transfer Rate (Mb/s, MT/s, MHz): 100 |
товар відсутній |
|||||||||||||||||
 |
CY24293ZXCT | Infineon Technologies |
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP |
товар відсутній |
|||||||||||||||||
 |
CY24378ZXC | Infineon Technologies |
Description: IC CLK BUFFER 2PR 16-TSSOP Packaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Supplier Device Package: 16-TSSOP DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
|
|
CY26121KZI-21 | Infineon Technologies |
Description: IC FANOUT DIST 16TSSOP Packaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 33.33MHz Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator Input: Clock, Crystal Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
| CY3210-PLOC10 | Infineon Technologies |
Description: PSOC WITH C COMPILER EVAL BRD Packaging: Box Mounting Type: Socket Type: MCU 8-Bit Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer Core Processor: M8C Board Type: Evaluation Platform Utilized IC / Part: PSoC® Platform: PSoC with C Compiler Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
| CY3210-PSOCEVAL1-U | Infineon Technologies |
Description: PSOC EVAL BRD Packaging: Box Mounting Type: Socket Type: MCU 8-Bit Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer Core Processor: M8C Board Type: Evaluation Platform Utilized IC / Part: PSoC® Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
| CY3660 | Infineon Technologies |
Description: PSOC EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 8-Bit Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer Core Processor: M8C Board Type: Evaluation Platform Utilized IC / Part: PSoC® Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
| CY3675-LCC4A | Infineon Technologies |
Description: BOARD ADAPTER LCC4A Packaging: Box For Use With/Related Products: CY25701, CY25702 Accessory Type: Socket Adapter |
товар відсутній |
||||||||||||||||||
| CY3675-LCC6A | Infineon Technologies |
Description: BOARD ADAPTER LCC6A Packaging: Box For Use With/Related Products: CY2X013, CY2X014, CY2XF23, CY2XF24, CY2XF32, CY2XF33, CY2XF34 Accessory Type: Socket Adapter |
товар відсутній |
||||||||||||||||||
| CY3675-QFN24A | Infineon Technologies |
Description: BOARD ADAPTER QFN24A |
товар відсутній |
||||||||||||||||||
| CY3675-QFN8A | Infineon Technologies |
Description: BOARD ADAPTER QFN8A Packaging: Box For Use With/Related Products: CY22M1, CY22U1 Accessory Type: Socket Adapter |
товар відсутній |
||||||||||||||||||
| CY3675-SOIC8A | Infineon Technologies |
Description: BOARD ADAPTER SOIC8A Packaging: Box For Use With/Related Products: CY25402, CY25403, CY25422, CY25423, CY25482, CY25483 Accessory Type: Socket Adapter |
товар відсутній |
||||||||||||||||||
| CY3675-TSSOP20B | Infineon Technologies |
Description: BOARD ADAPTER TSSOP20B Packaging: Box For Use With/Related Products: CY25404 Accessory Type: Socket Adapter Part Status: Active |
товар відсутній |
||||||||||||||||||
 |
CY36800J | Infineon Technologies |
Description: KIT PROGRAM INSTACLOCK JAPAN Packaging: Box For Use With/Related Products: CY22800 Type: Programmer Contents: Board(s) |
товар відсутній |
|||||||||||||||||
 |
CY7C1059DV33-12ZSXQT | Infineon Technologies |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
 |
CY8C21223-24LGXIT | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 16QFN Packaging: Tape & Reel (TR) Package / Case: 16-UFQFN Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 16-QFN (3x3) Part Status: Obsolete Number of I/O: 12 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
 |
CY8C21434-24LQXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
 |
CY8C24094-24LTXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 68QFN Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 48x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, SPI, UART/USART, USB Peripherals: POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 56 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
 |
CY8C24123A-24SXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 8-SOIC Number of I/O: 6 DigiKey Programmable: Verified |
на замовлення 1823 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
CY8C24994-24LTXIT | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 68QFN Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 48x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I²C, SPI, UART/USART, USB Peripherals: POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Part Status: Obsolete Number of I/O: 56 DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
 |
CYISM530AYXBT | Infineon Technologies |
Description: IC CLOCK SSCG EMI 20-SSOP Packaging: Tape & Reel (TR) Package / Case: 20-SSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Supplier Device Package: 20-SSOP DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
| CYV15G0101DX-VIDEO | Infineon Technologies |
Description: BOARD EVAL HOTLINK II VIDEO Packaging: Box Function: Serializer, Deserializer (SerDes) Type: Interface Utilized IC / Part: CYV15G0101DXB Supplied Contents: Board(s), Cable(s), Power Supply Primary Attributes: DVB-ASI and SMPTE Video Transmission Embedded: Yes, MCU, 8-Bit |
товар відсутній |
||||||||||||||||||
| CYWBDVK001AB | Infineon Technologies |
Description: BOARD DEV ANTIOCH Packaging: Box Function: Peripheral Controller Type: Interface Supplied Contents: Board(s) Embedded: No |
товар відсутній |
||||||||||||||||||
| CYWBDVK002AB | Infineon Technologies |
Description: BOARD DEV ANTIOCH Packaging: Box Function: Peripheral Controller Type: Interface Supplied Contents: Board(s) Embedded: No |
товар відсутній |
||||||||||||||||||
|
|
IRLB8721PBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 62A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 31A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1077 pF @ 15 V |
на замовлення 12622 шт: термін постачання 21-31 дні (днів) |
|
| IRLS4030TRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
на замовлення 1556 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 324.48 грн |
| 10+ | 207.03 грн |
| 100+ | 147.11 грн |
| CY7C1306CV25-167BZC |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.4V ~ 2.6V
Technology: SRAM - Synchronous, QDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.4V ~ 2.6V
Technology: SRAM - Synchronous, QDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товар відсутній
| CY7C1315JV18-300BZC |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товар відсутній
| CY7C1423JV18-250BZXC |
|
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
товар відсутній
| CY7C1423JV18-267BZXCT |
|
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
товар відсутній
| CY7C1480BV33-250BZI |
|
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 63 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17977.8 грн |
| 10+ | 15083.22 грн |
| 25+ | 15042.67 грн |
| 40+ | 13736.73 грн |
| CY8C20434-12LQXIT |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
товар відсутній
| CYONS2000-LBXC |
Виробник: Infineon Technologies
Description: IC SENSOR LASER OVATION 42-QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
Description: IC SENSOR LASER OVATION 42-QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
товар відсутній
| CYONS2001-LBXC |
Виробник: Infineon Technologies
Description: IC SENSOR LASER OVATION 42-QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
Description: IC SENSOR LASER OVATION 42-QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
товар відсутній
| CYONS2100-LBXC |
|
Виробник: Infineon Technologies
Description: IC SENSOR LASER OVATION 42-QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
Description: IC SENSOR LASER OVATION 42-QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
товар відсутній
| CYONS2101-LBXC |
Виробник: Infineon Technologies
Description: IC SENSOR LASER OVATION 42-QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
Description: IC SENSOR LASER OVATION 42-QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
товар відсутній
| CYONS2110-LBXC |
Виробник: Infineon Technologies
Description: SENSOR OPT LASER OVATION 42QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
Description: SENSOR OPT LASER OVATION 42QFN
Packaging: Tray
Package / Case: 42-BQFN Module
Mounting Type: Surface Mount
Supplier Device Package: 42-PQFN (8.3x8.3)
Part Status: Obsolete
товар відсутній
| CYWB0224ABM-BVXI |
|
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Description: IC WEST BRIDGE HS-USB 100VFBGA
товар відсутній
| CYWB0224ABMX-FDXIT |
|
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Description: IC WEST BRIDGE HS-USB 81-WLCSP
товар відсутній
| CYWB0226ABMX-FDXIT |
|
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Description: IC WEST BRIDGE HS-USB 81-WLCSP
товар відсутній
| IRF1404ZGPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
товар відсутній
| IRF7665S2TR1PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
товар відсутній
| IRF8707GTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
товар відсутній
| IRF8714GTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
товар відсутній
| IRF8721GTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
товар відсутній
| IRFB3004GPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
товар відсутній
| IRFB3006GPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
товар відсутній
| IRGI4056DPBF |
|
Виробник: Infineon Technologies
Description: IGBT 600V 18A 34W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 34ns/84ns
Switching Energy: 59µJ (on), 177µJ (off)
Test Condition: 400V, 9A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 34 W
Description: IGBT 600V 18A 34W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: Trench
Td (on/off) @ 25°C: 34ns/84ns
Switching Energy: 59µJ (on), 177µJ (off)
Test Condition: 400V, 9A, 22Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 34 W
товар відсутній
| IRLB3813PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
Description: MOSFET N-CH 30V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
на замовлення 4297 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.3 грн |
| 50+ | 80.36 грн |
| 100+ | 62.94 грн |
| 500+ | 53.66 грн |
| 1000+ | 51.3 грн |
| 2000+ | 47.59 грн |
| IRF7665S2TR1PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
товар відсутній
| IRF8707GTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
товар відсутній
| IRF8707GPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
товар відсутній
| IRF8714GPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
товар відсутній
| IRF8721GPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
товар відсутній
| IRF6718L2TR1PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 61A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET L6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Description: MOSFET N-CH 25V 61A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET L6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
товар відсутній
| IRF6718L2TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 61A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET L6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Description: MOSFET N-CH 25V 61A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET L6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
товар відсутній
| AGIGA8003-004ACA |
Виробник: Infineon Technologies
Description: MODUL NVRAM 4MB 100MHZ 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 4MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
Description: MODUL NVRAM 4MB 100MHZ 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 4MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
товар відсутній
| AGIGA8004-008ACA |
Виробник: Infineon Technologies
Description: MODUL NVRAM 8MB 100MHZ 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 8MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
Description: MODUL NVRAM 8MB 100MHZ 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 8MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
товар відсутній
| AGIGA8005-016ACA |
Виробник: Infineon Technologies
Description: MODULE NVRAM 16MB 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 16MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
Description: MODULE NVRAM 16MB 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 16MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
товар відсутній
| AGIGA8006-032ACA |
Виробник: Infineon Technologies
Description: MODULE NVRAM 32MB 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 32MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
Description: MODULE NVRAM 32MB 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 32MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
товар відсутній
| AGIGA8007-064ACA |
Виробник: Infineon Technologies
Description: MODULE NVRAM 64MB 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 64MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
Description: MODULE NVRAM 64MB 200SODIMM
Packaging: Box
Package / Case: 200-SODIMM
Memory Size: 64MB
Memory Type: NVRAM
Part Status: Obsolete
Transfer Rate (Mb/s, MT/s, MHz): 100
товар відсутній
| CY24293ZXCT |
|
Виробник: Infineon Technologies
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
товар відсутній
| CY24378ZXC |
Виробник: Infineon Technologies
Description: IC CLK BUFFER 2PR 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
Description: IC CLK BUFFER 2PR 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 16-TSSOP
DigiKey Programmable: Not Verified
товар відсутній
| CY26121KZI-21 |
|
Виробник: Infineon Technologies
Description: IC FANOUT DIST 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 33.33MHz
Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT DIST 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 33.33MHz
Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
товар відсутній
| CY3210-PLOC10 |
Виробник: Infineon Technologies
Description: PSOC WITH C COMPILER EVAL BRD
Packaging: Box
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Platform: PSoC with C Compiler
Part Status: Obsolete
Description: PSOC WITH C COMPILER EVAL BRD
Packaging: Box
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Platform: PSoC with C Compiler
Part Status: Obsolete
товар відсутній
| CY3210-PSOCEVAL1-U |
Виробник: Infineon Technologies
Description: PSOC EVAL BRD
Packaging: Box
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Part Status: Obsolete
Description: PSOC EVAL BRD
Packaging: Box
Mounting Type: Socket
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Part Status: Obsolete
товар відсутній
| CY3660 |
|
Виробник: Infineon Technologies
Description: PSOC EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Part Status: Obsolete
Description: PSOC EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Cable(s), LCD, Power Supply, Accessories, MiniProg Programmer
Core Processor: M8C
Board Type: Evaluation Platform
Utilized IC / Part: PSoC®
Part Status: Obsolete
товар відсутній
| CY3675-LCC4A |
|
Виробник: Infineon Technologies
Description: BOARD ADAPTER LCC4A
Packaging: Box
For Use With/Related Products: CY25701, CY25702
Accessory Type: Socket Adapter
Description: BOARD ADAPTER LCC4A
Packaging: Box
For Use With/Related Products: CY25701, CY25702
Accessory Type: Socket Adapter
товар відсутній
| CY3675-LCC6A |
|
Виробник: Infineon Technologies
Description: BOARD ADAPTER LCC6A
Packaging: Box
For Use With/Related Products: CY2X013, CY2X014, CY2XF23, CY2XF24, CY2XF32, CY2XF33, CY2XF34
Accessory Type: Socket Adapter
Description: BOARD ADAPTER LCC6A
Packaging: Box
For Use With/Related Products: CY2X013, CY2X014, CY2XF23, CY2XF24, CY2XF32, CY2XF33, CY2XF34
Accessory Type: Socket Adapter
товар відсутній
| CY3675-QFN8A |
|
Виробник: Infineon Technologies
Description: BOARD ADAPTER QFN8A
Packaging: Box
For Use With/Related Products: CY22M1, CY22U1
Accessory Type: Socket Adapter
Description: BOARD ADAPTER QFN8A
Packaging: Box
For Use With/Related Products: CY22M1, CY22U1
Accessory Type: Socket Adapter
товар відсутній
| CY3675-SOIC8A |
|
Виробник: Infineon Technologies
Description: BOARD ADAPTER SOIC8A
Packaging: Box
For Use With/Related Products: CY25402, CY25403, CY25422, CY25423, CY25482, CY25483
Accessory Type: Socket Adapter
Description: BOARD ADAPTER SOIC8A
Packaging: Box
For Use With/Related Products: CY25402, CY25403, CY25422, CY25423, CY25482, CY25483
Accessory Type: Socket Adapter
товар відсутній
| CY3675-TSSOP20B |
|
Виробник: Infineon Technologies
Description: BOARD ADAPTER TSSOP20B
Packaging: Box
For Use With/Related Products: CY25404
Accessory Type: Socket Adapter
Part Status: Active
Description: BOARD ADAPTER TSSOP20B
Packaging: Box
For Use With/Related Products: CY25404
Accessory Type: Socket Adapter
Part Status: Active
товар відсутній
| CY36800J |
|
Виробник: Infineon Technologies
Description: KIT PROGRAM INSTACLOCK JAPAN
Packaging: Box
For Use With/Related Products: CY22800
Type: Programmer
Contents: Board(s)
Description: KIT PROGRAM INSTACLOCK JAPAN
Packaging: Box
For Use With/Related Products: CY22800
Type: Programmer
Contents: Board(s)
товар відсутній
| CY7C1059DV33-12ZSXQT |
|
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товар відсутній
| CY8C21223-24LGXIT |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Obsolete
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Part Status: Obsolete
Number of I/O: 12
DigiKey Programmable: Not Verified
товар відсутній
| CY8C21434-24LQXIT |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
товар відсутній
| CY8C24094-24LTXI |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
товар відсутній
| CY8C24123A-24SXI |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 6
DigiKey Programmable: Verified
Description: IC MCU 8BIT 4KB FLASH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 6
DigiKey Programmable: Verified
на замовлення 1823 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256 грн |
| 10+ | 180.66 грн |
| 97+ | 146.27 грн |
| 194+ | 130.87 грн |
| 291+ | 129.48 грн |
| CY8C24994-24LTXIT |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Obsolete
Number of I/O: 56
DigiKey Programmable: Not Verified
товар відсутній
| CYISM530AYXBT |
Виробник: Infineon Technologies
Description: IC CLOCK SSCG EMI 20-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 20-SSOP
DigiKey Programmable: Not Verified
Description: IC CLOCK SSCG EMI 20-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 20-SSOP
DigiKey Programmable: Not Verified
товар відсутній
| CYV15G0101DX-VIDEO |
|
Виробник: Infineon Technologies
Description: BOARD EVAL HOTLINK II VIDEO
Packaging: Box
Function: Serializer, Deserializer (SerDes)
Type: Interface
Utilized IC / Part: CYV15G0101DXB
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: DVB-ASI and SMPTE Video Transmission
Embedded: Yes, MCU, 8-Bit
Description: BOARD EVAL HOTLINK II VIDEO
Packaging: Box
Function: Serializer, Deserializer (SerDes)
Type: Interface
Utilized IC / Part: CYV15G0101DXB
Supplied Contents: Board(s), Cable(s), Power Supply
Primary Attributes: DVB-ASI and SMPTE Video Transmission
Embedded: Yes, MCU, 8-Bit
товар відсутній
| CYWBDVK001AB |
|
Виробник: Infineon Technologies
Description: BOARD DEV ANTIOCH
Packaging: Box
Function: Peripheral Controller
Type: Interface
Supplied Contents: Board(s)
Embedded: No
Description: BOARD DEV ANTIOCH
Packaging: Box
Function: Peripheral Controller
Type: Interface
Supplied Contents: Board(s)
Embedded: No
товар відсутній
| CYWBDVK002AB |
Виробник: Infineon Technologies
Description: BOARD DEV ANTIOCH
Packaging: Box
Function: Peripheral Controller
Type: Interface
Supplied Contents: Board(s)
Embedded: No
Description: BOARD DEV ANTIOCH
Packaging: Box
Function: Peripheral Controller
Type: Interface
Supplied Contents: Board(s)
Embedded: No
товар відсутній
| IRLB8721PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 62A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 31A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1077 pF @ 15 V
Description: MOSFET N-CH 30V 62A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 31A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1077 pF @ 15 V
на замовлення 12622 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.72 грн |
| 50+ | 50.05 грн |
| 100+ | 44.63 грн |
| 500+ | 32.95 грн |
| 1000+ | 30.07 грн |
| 2000+ | 27.65 грн |
| 5000+ | 24.61 грн |
| 10000+ | 24.4 грн |