Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139428) > Сторінка 125 з 2324
Фото | Назва | Виробник | Інформація |
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BC817K25E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 45V 0.5A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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BGA622E6820HTSA1 | Infineon Technologies |
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 500MHz ~ 6GHz RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL Voltage - Supply: 3.5V Gain: 15dB Current - Supply: 10mA Noise Figure: 1dB P1dB: -16.5dBm Test Frequency: 1.575GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
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ESD0P2RF02LSE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.3VWM 21VC TSSLP-2 Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSSLP-2-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No |
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BAS3007ARPPE6327HTSA1 | Infineon Technologies |
Description: BRIDGE RECT 1P 30V 900MA SOT143 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: 150°C (TJ) Technology: Schottky Supplier Device Package: PG-SOT-143-3D Grade: Automotive Part Status: Active Voltage - Peak Reverse (Max): 30 V Current - Average Rectified (Io): 900 mA Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA Current - Reverse Leakage @ Vr: 350 µA @ 30 V Qualification: AEC-Q101 |
на замовлення 13545 шт: термін постачання 21-31 дні (днів) |
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BAS4002ARPPE6327HTSA1 | Infineon Technologies |
Description: BRIDGE RECT 1P 40V 200MA SOT143 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: 150°C (TJ) Technology: Schottky Supplier Device Package: PG-SOT-143-3D Grade: Automotive Part Status: Active Voltage - Peak Reverse (Max): 40 V Current - Average Rectified (Io): 200 mA Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 42891 шт: термін постачання 21-31 дні (днів) |
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BC817K25E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 45V 0.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 170MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
на замовлення 73351 шт: термін постачання 21-31 дні (днів) |
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BGA622E6820HTSA1 | Infineon Technologies |
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 500MHz ~ 6GHz RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL Voltage - Supply: 3.5V Gain: 15dB Current - Supply: 10mA Noise Figure: 1dB P1dB: -16.5dBm Test Frequency: 1.575GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
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BCX 55-16 E6327 | Infineon Technologies |
Description: TRANS NPN 60V 1A SOT-89 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT89 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
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BDP947E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 45V 3A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 5 W |
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BDP949E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 60V 3A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 5 W |
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BFP 182 E7764 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT143-4 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 22dB Power - Max: 250mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT-143-3D Part Status: Obsolete |
на замовлення 688 шт: термін постачання 21-31 дні (днів) |
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BFP182WE6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT343-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 22dB Power - Max: 250mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT343-3D |
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BFP183E7764HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT143-4 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 22dB Power - Max: 250mW Current - Collector (Ic) (Max): 65mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT-143-3D Part Status: Active |
на замовлення 18928 шт: термін постачання 21-31 дні (днів) |
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BFP193E6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT143-4 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB ~ 18dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT-143-3D Part Status: Active |
на замовлення 5327 шт: термін постачання 21-31 дні (днів) |
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BFP193WE6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT343-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB ~ 20.5dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
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BFP196E6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 7.5GHZ SOT143-4 Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 16.5dB Power - Max: 700mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT-143-3D Part Status: Active |
на замовлення 12805 шт: термін постачання 21-31 дні (днів) |
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BFR181E6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 18.5dB Power - Max: 175mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 |
на замовлення 5871 шт: термін постачання 21-31 дні (днів) |
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BFR 181W E6327 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 19dB Power - Max: 175mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT323 |
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BFR182E6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB ~ 18dB Power - Max: 250mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 Part Status: Active |
на замовлення 14788 шт: термін постачання 21-31 дні (днів) |
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BFR 182W E6327 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 19dB Power - Max: 250mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT323 |
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BFR 183W E6327 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 18.5dB Power - Max: 450mW Current - Collector (Ic) (Max): 65mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT323 |
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BFR193E6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10dB ~ 15dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 Part Status: Active |
на замовлення 27907 шт: термін постачання 21-31 дні (днів) |
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BFR 193W E6327 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 16dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT323 Part Status: Obsolete |
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KIT TVS DIODE 2 | Infineon Technologies |
Description: KIT SAMPLE TVS FOR RF/ANT PROT Packaging: Box Mounting Type: Surface Mount Quantity: 112 Pieces (8 Values - Mixed Quantities) Kit Type: ESD Protection Voltage - Breakdown: 3.3V ~ 70V |
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KITTVSDIODE1TOBO1 | Infineon Technologies |
Description: KIT SAMPLE TVS FOR HS APPLCTN Packaging: Box Mounting Type: Surface Mount Quantity: 96 Pieces (6 Values - 16 Each) Kit Type: ESD Protection Voltage - Breakdown: 3.3V ~ 14.5V |
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SP000410812 | Infineon Technologies | Description: KIT SAMPLE FOR CURRENT TO 3A |
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SP000410810 | Infineon Technologies | Description: KIT SAMPLE FOR MIX/DETECT PWRLVL |
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SP000410804 | Infineon Technologies | Description: KIT SAMPLE FOR GEN PURP RF TRANS |
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SP000410802 | Infineon Technologies | Description: KIT SAMPLE FOR HIGH END SI/SIGE |
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KIT RF DIODE 2 | Infineon Technologies | Description: KIT SAMPLE RF FOR RF APPLICTN |
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SP000410806 | Infineon Technologies | Description: KIT SAMPLE RF FOR RF SWITCHING |
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KIT MMIC GP | Infineon Technologies | Description: KIT SAMPLE FOR GEN PURP MMIC LNA |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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SP000463270 | Infineon Technologies |
Description: KIT SAMPLE FOR GPS APPLICATIONS Packaging: Box Mounting Type: Surface Mount Quantity: 160 Pieces (15 Values - Mixed Quantities) Kit Type: RF |
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SP000410854 | Infineon Technologies | Description: KIT SAMPLE FOR DGTL TRANS 500MA |
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SP000410852 | Infineon Technologies | Description: KIT SAMPLE DGTL DL TRANS 100MA |
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SP000410856 | Infineon Technologies | Description: KIT SAMPLE FOR LED DRIVERS |
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SP000410842 | Infineon Technologies |
Description: KIT SAMPLE FOR HV/MULTI CHIP Packaging: Box Mounting Type: Surface Mount Quantity: 140 Pieces (19 Values - Mixed Quantities) Kit Type: Rectifier Diode Part Status: Obsolete |
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IRLS3036-7PPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 240A D2PAK Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V |
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IRFS5620PBF | Infineon Technologies |
Description: MOSFET N-CH 200V 24A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V |
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IRF6218STRLPBF | Infineon Technologies |
Description: MOSFET P-CH 150V 27A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V |
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IR3831MTR1PBF | Infineon Technologies |
Description: IC REG CONV DDR 1OUT PQFN Packaging: Tape & Reel (TR) Package / Case: 15-PowerVQFN Voltage - Output: 0.6V ~ 14.4V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 1.5V ~ 16V Operating Temperature: -40°C ~ 125°C Applications: Converter, DDR Supplier Device Package: PQFN (5x6) |
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IR3840MTR1PBF | Infineon Technologies |
Description: IC REG BUCK ADJ 12A PQFN Packaging: Tape & Reel (TR) Package / Case: 15-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 12A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 14.4V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V |
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IR3841MTR1PBF | Infineon Technologies |
Description: IC REG BUCK ADJ 8A PQFN Packaging: Tape & Reel (TR) Package / Case: 15-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 8A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 14.4V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V Part Status: Obsolete |
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IR3842MTR1PBF | Infineon Technologies |
Description: IC REG BUCK ADJ 4A PQFN Packaging: Tape & Reel (TR) Package / Case: 15-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 4A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 14.4V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V |
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IR3831MTR1PBF | Infineon Technologies |
Description: IC REG CONV DDR 1OUT PQFN Packaging: Cut Tape (CT) Package / Case: 15-PowerVQFN Voltage - Output: 0.6V ~ 14.4V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 1.5V ~ 16V Operating Temperature: -40°C ~ 125°C Applications: Converter, DDR Supplier Device Package: PQFN (5x6) |
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IR3841MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 8A PQFN Packaging: Tape & Reel (TR) Package / Case: 15-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 8A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 14.4V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V |
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IR3840MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 12A PQFN Packaging: Tape & Reel (TR) Package / Case: 15-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 12A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 225kHz ~ 1.65MHz Voltage - Input (Max): 16V Topology: Buck Supplier Device Package: PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 14.4V Voltage - Input (Min): 1.5V Voltage - Output (Min/Fixed): 0.7V |
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IR3831MTRPBF | Infineon Technologies |
Description: IC REG CONV DDR 1OUT PQFN Packaging: Tape & Reel (TR) Package / Case: 15-PowerVQFN Voltage - Output: 0.6V ~ 14.4V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 1.5V ~ 16V Operating Temperature: -40°C ~ 125°C Applications: Converter, DDR Supplier Device Package: PQFN (5x6) |
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ESD0P2RF02LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.3VWM 21VC TSLP-2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No |
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BTS500551TMBAKSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7 Features: Auto Restart Packaging: Tube Package / Case: TO-220-7 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 4.4mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 70A Ratio - Input:Output: 1:1 Supplier Device Package: P-TO220-7-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Not For New Designs |
на замовлення 456 шт: термін постачання 21-31 дні (днів) |
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CY7C1250V18-333BZXC | Infineon Technologies | Description: IC SRAM 36MBIT PARALLEL 165FBGA |
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CY7C1414JV18-250BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
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CYD02S36V18-167BBC | Infineon Technologies | Description: IC SRAM 2MBIT PARALLEL 256FBGA |
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CYP15G0403DXB-BGXI | Infineon Technologies |
Description: IC TELECOM INTERFACE 256BGA Packaging: Tray Package / Case: 256-BGA Exposed Pad Mounting Type: Surface Mount Function: Transceiver Interface: LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.135V ~ 3.465V Current - Supply: 900mA Supplier Device Package: 256-L2BGA (27x27) Part Status: Obsolete Number of Circuits: 4 |
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STK11C88-SF25 | Infineon Technologies | Description: IC NVSRAM 256KBIT PAR 28SOIC |
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STK12C68-5C55M | Infineon Technologies |
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP Packaging: Tube Package / Case: 28-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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STK12C68-5K35M | Infineon Technologies |
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP Packaging: Tube Package / Case: 28-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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STK12C68-C35I | Infineon Technologies |
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP Packaging: Tube Package / Case: 28-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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STK12C68-C45 | Infineon Technologies |
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP Packaging: Tube Package / Case: 28-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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STK12C68-C45I | Infineon Technologies |
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP Packaging: Tube Package / Case: 28-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 28-CDIP Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товар відсутній |
BC817K25E6327HTSA1 |
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.46 грн |
6000+ | 3.98 грн |
9000+ | 3.3 грн |
30000+ | 3.04 грн |
BGA622E6820HTSA1 |
Виробник: Infineon Technologies
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товар відсутній
ESD0P2RF02LSE6327XTSA1 |
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSSLP-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Description: TVS DIODE 5.3VWM 21VC TSSLP-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
товар відсутній
BAS3007ARPPE6327HTSA1 |
Виробник: Infineon Technologies
Description: BRIDGE RECT 1P 30V 900MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1P 30V 900MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 900 mA
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 900 mA
Current - Reverse Leakage @ Vr: 350 µA @ 30 V
Qualification: AEC-Q101
на замовлення 13545 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 72.37 грн |
10+ | 43.31 грн |
100+ | 28.3 грн |
500+ | 20.5 грн |
1000+ | 18.54 грн |
BAS4002ARPPE6327HTSA1 |
Виробник: Infineon Technologies
Description: BRIDGE RECT 1P 40V 200MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 200 mA
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1P 40V 200MA SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Schottky
Supplier Device Package: PG-SOT-143-3D
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 40 V
Current - Average Rectified (Io): 200 mA
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
на замовлення 42891 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 59.14 грн |
10+ | 35.74 грн |
100+ | 23.18 грн |
500+ | 16.67 грн |
1000+ | 15.02 грн |
BC817K25E6327HTSA1 |
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
на замовлення 73351 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.46 грн |
18+ | 17.46 грн |
100+ | 8.54 грн |
500+ | 6.69 грн |
1000+ | 4.65 грн |
BGA622E6820HTSA1 |
Виробник: Infineon Technologies
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Description: IC AMP CELL 500MHZ-6GHZ SOT343-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Voltage - Supply: 3.5V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товар відсутній
BCX 55-16 E6327 |
Виробник: Infineon Technologies
Description: TRANS NPN 60V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN 60V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товар відсутній
BDP947E6327HTSA1 |
Виробник: Infineon Technologies
Description: TRANS NPN 45V 3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
Description: TRANS NPN 45V 3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 5 W
товар відсутній
BDP949E6327HTSA1 |
Виробник: Infineon Technologies
Description: TRANS NPN 60V 3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Description: TRANS NPN 60V 3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
товар відсутній
BFP 182 E7764 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Description: RF TRANS NPN 12V 8GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
на замовлення 688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.23 грн |
18+ | 17.38 грн |
25+ | 15.05 грн |
100+ | 11.7 грн |
250+ | 10.56 грн |
500+ | 9.82 грн |
BFP182WE6327HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
товар відсутній
BFP183E7764HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
на замовлення 18928 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 25.68 грн |
15+ | 20.31 грн |
25+ | 18.58 грн |
100+ | 12.99 грн |
250+ | 11.77 грн |
500+ | 9.74 грн |
1000+ | 7.19 грн |
BFP193E6327HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
на замовлення 5327 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 28.01 грн |
14+ | 22.03 грн |
25+ | 20.17 грн |
100+ | 14.08 грн |
250+ | 12.76 грн |
500+ | 10.56 грн |
1000+ | 7.79 грн |
BFP193WE6327HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 20.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB ~ 20.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товар відсутній
BFP196E6327HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Description: RF TRANS NPN 12V 7.5GHZ SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16.5dB
Power - Max: 700mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
на замовлення 12805 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.46 грн |
13+ | 24.35 грн |
25+ | 22 грн |
100+ | 14.27 грн |
250+ | 12.02 грн |
500+ | 9.76 грн |
1000+ | 7.39 грн |
BFR181E6327HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
на замовлення 5871 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 34.24 грн |
12+ | 25.18 грн |
25+ | 22.69 грн |
100+ | 14.72 грн |
250+ | 12.39 грн |
500+ | 10.07 грн |
1000+ | 7.62 грн |
BFR 181W E6327 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
товар відсутній
BFR182E6327HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 14788 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.23 грн |
15+ | 21.21 грн |
25+ | 19.42 грн |
100+ | 13.58 грн |
250+ | 12.31 грн |
500+ | 10.18 грн |
1000+ | 7.51 грн |
BFR 182W E6327 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
товар відсутній
BFR 183W E6327 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
товар відсутній
BFR193E6327HTSA1 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 27907 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.56 грн |
32+ | 9.59 грн |
36+ | 8.33 грн |
100+ | 6.52 грн |
250+ | 5.9 грн |
500+ | 5.53 грн |
1000+ | 5.13 грн |
BFR 193W E6327 |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
товар відсутній
KIT TVS DIODE 2 |
Виробник: Infineon Technologies
Description: KIT SAMPLE TVS FOR RF/ANT PROT
Packaging: Box
Mounting Type: Surface Mount
Quantity: 112 Pieces (8 Values - Mixed Quantities)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 70V
Description: KIT SAMPLE TVS FOR RF/ANT PROT
Packaging: Box
Mounting Type: Surface Mount
Quantity: 112 Pieces (8 Values - Mixed Quantities)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 70V
товар відсутній
KITTVSDIODE1TOBO1 |
Виробник: Infineon Technologies
Description: KIT SAMPLE TVS FOR HS APPLCTN
Packaging: Box
Mounting Type: Surface Mount
Quantity: 96 Pieces (6 Values - 16 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 14.5V
Description: KIT SAMPLE TVS FOR HS APPLCTN
Packaging: Box
Mounting Type: Surface Mount
Quantity: 96 Pieces (6 Values - 16 Each)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 14.5V
товар відсутній
SP000410812 |
Виробник: Infineon Technologies
Description: KIT SAMPLE FOR CURRENT TO 3A
Description: KIT SAMPLE FOR CURRENT TO 3A
товар відсутній
SP000410810 |
Виробник: Infineon Technologies
Description: KIT SAMPLE FOR MIX/DETECT PWRLVL
Description: KIT SAMPLE FOR MIX/DETECT PWRLVL
товар відсутній
SP000410804 |
Виробник: Infineon Technologies
Description: KIT SAMPLE FOR GEN PURP RF TRANS
Description: KIT SAMPLE FOR GEN PURP RF TRANS
товар відсутній
SP000410802 |
Виробник: Infineon Technologies
Description: KIT SAMPLE FOR HIGH END SI/SIGE
Description: KIT SAMPLE FOR HIGH END SI/SIGE
товар відсутній
KIT RF DIODE 2 |
Виробник: Infineon Technologies
Description: KIT SAMPLE RF FOR RF APPLICTN
Description: KIT SAMPLE RF FOR RF APPLICTN
товар відсутній
SP000410806 |
Виробник: Infineon Technologies
Description: KIT SAMPLE RF FOR RF SWITCHING
Description: KIT SAMPLE RF FOR RF SWITCHING
товар відсутній
KIT MMIC GP |
Виробник: Infineon Technologies
Description: KIT SAMPLE FOR GEN PURP MMIC LNA
Description: KIT SAMPLE FOR GEN PURP MMIC LNA
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 914.3 грн |
SP000463270 |
Виробник: Infineon Technologies
Description: KIT SAMPLE FOR GPS APPLICATIONS
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (15 Values - Mixed Quantities)
Kit Type: RF
Description: KIT SAMPLE FOR GPS APPLICATIONS
Packaging: Box
Mounting Type: Surface Mount
Quantity: 160 Pieces (15 Values - Mixed Quantities)
Kit Type: RF
товар відсутній
SP000410854 |
Виробник: Infineon Technologies
Description: KIT SAMPLE FOR DGTL TRANS 500MA
Description: KIT SAMPLE FOR DGTL TRANS 500MA
товар відсутній
SP000410852 |
Виробник: Infineon Technologies
Description: KIT SAMPLE DGTL DL TRANS 100MA
Description: KIT SAMPLE DGTL DL TRANS 100MA
товар відсутній
SP000410842 |
Виробник: Infineon Technologies
Description: KIT SAMPLE FOR HV/MULTI CHIP
Packaging: Box
Mounting Type: Surface Mount
Quantity: 140 Pieces (19 Values - Mixed Quantities)
Kit Type: Rectifier Diode
Part Status: Obsolete
Description: KIT SAMPLE FOR HV/MULTI CHIP
Packaging: Box
Mounting Type: Surface Mount
Quantity: 140 Pieces (19 Values - Mixed Quantities)
Kit Type: Rectifier Diode
Part Status: Obsolete
товар відсутній
IRLS3036-7PPBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11270 pF @ 50 V
товар відсутній
IRFS5620PBF |
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
товар відсутній
IRF6218STRLPBF |
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Description: MOSFET P-CH 150V 27A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
товар відсутній
IR3831MTR1PBF |
Виробник: Infineon Technologies
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
товар відсутній
IR3840MTR1PBF |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3841MTR1PBF |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Part Status: Obsolete
товар відсутній
IR3842MTR1PBF |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Description: IC REG BUCK ADJ 4A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3831MTR1PBF |
Виробник: Infineon Technologies
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
товар відсутній
IR3841MTRPBF |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3840MTRPBF |
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Description: IC REG BUCK ADJ 12A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 12A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.65MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14.4V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
товар відсутній
IR3831MTRPBF |
Виробник: Infineon Technologies
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
Description: IC REG CONV DDR 1OUT PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Voltage - Output: 0.6V ~ 14.4V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 1.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Applications: Converter, DDR
Supplier Device Package: PQFN (5x6)
товар відсутній
ESD0P2RF02LRHE6327XTSA1 |
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Description: TVS DIODE 5.3VWM 21VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
товар відсутній
BTS500551TMBAKSA1 |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 70A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Not For New Designs
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Tube
Package / Case: TO-220-7 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 4.4mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 70A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-7-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Not For New Designs
на замовлення 456 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 459.09 грн |
10+ | 399.23 грн |
50+ | 380.62 грн |
100+ | 310.15 грн |
250+ | 296.21 грн |
CY7C1250V18-333BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Description: IC SRAM 36MBIT PARALLEL 165FBGA
товар відсутній
CY7C1414JV18-250BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
товар відсутній
CYD02S36V18-167BBC |
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 256FBGA
Description: IC SRAM 2MBIT PARALLEL 256FBGA
товар відсутній
CYP15G0403DXB-BGXI |
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Function: Transceiver
Interface: LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 900mA
Supplier Device Package: 256-L2BGA (27x27)
Part Status: Obsolete
Number of Circuits: 4
Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Function: Transceiver
Interface: LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 900mA
Supplier Device Package: 256-L2BGA (27x27)
Part Status: Obsolete
Number of Circuits: 4
товар відсутній
STK11C88-SF25 |
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 28SOIC
Description: IC NVSRAM 256KBIT PAR 28SOIC
товар відсутній
STK12C68-5C55M |
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній
STK12C68-5K35M |
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній
STK12C68-C35I |
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній
STK12C68-C45 |
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній
STK12C68-C45I |
Виробник: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 64KBIT PARALLEL 28CDIP
Packaging: Tube
Package / Case: 28-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-CDIP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній