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SPP20N60CFD SPP20N60CFD INFINEON TECHNOLOGIES SPP20N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPP20N60S5 SPP20N60S5 INFINEON TECHNOLOGIES SPP20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 72 шт:
термін постачання 14-21 дні (днів)
1+643.94 грн
3+ 431.39 грн
7+ 392.94 грн
SPP20N65C3 SPP20N65C3 INFINEON TECHNOLOGIES SPx20N65C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
1+518.06 грн
3+ 372.57 грн
9+ 339.88 грн
SPP21N50C3 SPP21N50C3 INFINEON TECHNOLOGIES SPx21N50C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 14-21 дні (днів)
1+483.2 грн
3+ 419.25 грн
4+ 308.41 грн
10+ 292.23 грн
SPP24N60C3 SPP24N60C3 INFINEON TECHNOLOGIES SPP24N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPP80P06PHXKSA1 SPP80P06PHXKSA1 INFINEON TECHNOLOGIES SPP80P06PHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 340W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)
1+292.44 грн
6+ 192.35 грн
16+ 175.34 грн
SPU03N60C3BKMA1 SPU03N60C3BKMA1 INFINEON TECHNOLOGIES SP_03N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 974 шт:
термін постачання 14-21 дні (днів)
4+72.62 грн
5+ 62 грн
21+ 52.15 грн
56+ 49.45 грн
525+ 47.21 грн
Мінімальне замовлення: 4
SPW11N80C3 SPW11N80C3 INFINEON TECHNOLOGIES SPW11N80C3-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES SPW17N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 223 шт:
термін постачання 14-21 дні (днів)
1+560.66 грн
3+ 392.18 грн
8+ 357.87 грн
SPW20N60C3 SPW20N60C3 INFINEON TECHNOLOGIES SPW20N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW20N60S5 SPW20N60S5 INFINEON TECHNOLOGIES SPW20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)
1+591.65 грн
3+ 394.04 грн
8+ 358.77 грн
SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES SPW35N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)
1+878.28 грн
2+ 743.26 грн
3+ 714.84 грн
5+ 676.17 грн
30+ 650.1 грн
SPW35N60CFD SPW35N60CFD INFINEON TECHNOLOGIES SPW35N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES SPW47N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 112 шт:
термін постачання 14-21 дні (днів)
1+1425.39 грн
2+ 999.11 грн
3+ 961.21 грн
4+ 909.06 грн
SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES SPW47N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW47N65C3FKSA1 SPW47N65C3FKSA1 INFINEON TECHNOLOGIES SPW47N65C3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW55N80C3FKSA1 INFINEON TECHNOLOGIES Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STT1400N16P55XPSA1 INFINEON TECHNOLOGIES Infineon-STT1400N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc220d0b1754 STT1400N16P55 Thyristor modules
товар відсутній
STT1400N18P55XPSA1 INFINEON TECHNOLOGIES Infineon-STT1400N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99a9775672 STT1400N18P55XPSA1 Thyristor modules
товар відсутній
STT1900N16P55XPSA1 INFINEON TECHNOLOGIES Infineon-STT1900N16P55-DS-v03_01-EN.pdf?fileId=5546d4625f96303e015fd95f11276e7a STT1900N16P55 Thyristor modules
товар відсутній
STT1900N18P55XPSA1 INFINEON TECHNOLOGIES Infineon-STT1900N18P55-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc999c30566f STT1900N18P55XPSA1 Thyristor modules
товар відсутній
STT2200N16P55XPSA1 INFINEON TECHNOLOGIES STT2200N16P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 2.2kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 2.2kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
STT2200N18P55XPSA1 INFINEON TECHNOLOGIES STT2200N18P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
STT3300N16P76XPSA1 INFINEON TECHNOLOGIES Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 3.3kA; BG-PS55-1; screw; screw
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Load current: 3.3kA
Semiconductor structure: opposing
кількість в упаковці: 1 шт
товар відсутній
STT3300N18P76XPSA1 INFINEON TECHNOLOGIES STT3300N18P76XPSA1 Thyristor modules
товар відсутній
STT800N16P55XPSA1 INFINEON TECHNOLOGIES STT800N16P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
кількість в упаковці: 1 шт
товар відсутній
T1190N16TOFVTXPSA1 INFINEON TECHNOLOGIES T1190N_ser.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T7526K-1
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Max. forward impulse current: 22.5kA
кількість в упаковці: 1 шт
товар відсутній
T1590N28TOFVTXPSA1 INFINEON TECHNOLOGIES Infineon-T1590N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc2012409cf7bc2474b Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T10026K-1
Max. off-state voltage: 2.8kV
Max. load current: 3.2kA
Load current: 1.59kA
Gate current: 300mA
Max. forward impulse current: 32kA
кількість в упаковці: 1 шт
товар відсутній
T1901N80TOHXPSA1 INFINEON TECHNOLOGIES T1901N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Case: BG-T15035K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 8kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 350mA
Max. forward impulse current: 67kA
Load current: 2.1kA
Max. load current: 3.3kA
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T3160N16TOFVTXPSA1 INFINEON TECHNOLOGIES T3160N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Case: BG-T11126K-1
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Max. forward impulse current: 63kA
кількість в упаковці: 1 шт
товар відсутній
T3160N18TOFVTXPSA1 INFINEON TECHNOLOGIES T3160N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Max. load current: 7kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T360N22TOFXPSA1 INFINEON TECHNOLOGIES Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 550A
Load current: 360A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T390N16TOFXPSA1 INFINEON TECHNOLOGIES Infineon-T390N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128636b9b085316 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 600A; 381A; Igt: 150mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 600A
Load current: 381A
Gate current: 150mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 4.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T420N16TOFXPSA1 INFINEON TECHNOLOGIES Infineon-T420N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637bdb055339 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 750A; 424A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 750A
Load current: 424A
Gate current: 200mA
Max. forward impulse current: 7.2kA
кількість в упаковці: 1 шт
товар відсутній
T430N12TOFXPSA1 INFINEON TECHNOLOGIES T430N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 700A; 433A; Igt: 200mA
Kind of package: in-tray
Max. forward impulse current: 5.2kA
Gate current: 200mA
Load current: 433A
Max. load current: 700A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Case: BG-T4214K0-1
Mounting: Press-Pack
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T501N70TOHXPSA1 INFINEON TECHNOLOGIES Infineon-T501N-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b4304de2500a T501N70TOHXPSA1 Button thyristors
товар відсутній
T560N14TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T560N16TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T560N18TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.8kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T590N14TOFXPSA1 INFINEON TECHNOLOGIES T590N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.4kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T590N18TOFXPSA1 INFINEON TECHNOLOGIES T590N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T640N12TOFXPSA1 INFINEON TECHNOLOGIES T640Nxx.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 644A
Case: BG-T4814K0-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T720N16TOFXPSA1 INFINEON TECHNOLOGIES T720N16TOF.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 1.65kA
Load current: 720A
Gate current: 250mA
Max. forward impulse current: 12.5kA
кількість в упаковці: 1 шт
товар відсутній
T740N26TOFXPSA1 INFINEON TECHNOLOGIES T740N_ser.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 2.6kV; Ifmax: 1.5A; 745A; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.6kV
Max. load current: 1.5A
Load current: 745A
Gate current: 250mA
Case: BG-T5814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 13kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T830N12TOFXPSA1 INFINEON TECHNOLOGIES T830N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 844A
Case: BG-T5814K0-1
Max. forward impulse current: 14.5A
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.5kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
TD104N14KOF INFINEON TECHNOLOGIES TD104N14KOF Diode - thyristor modules
товар відсутній
TD120N16SOFHPSA1 TD120N16SOFHPSA1 INFINEON TECHNOLOGIES TD120N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
кількість в упаковці: 1 шт
товар відсутній
TD122N22KOF INFINEON TECHNOLOGIES TD122N22KOF Diode - thyristor modules
товар відсутній
TD140N16SOFHPSA1 INFINEON TECHNOLOGIES TD140N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; BG-PB34SB-1; Ufmax: 1.41V
Case: BG-PB34SB-1
Max. forward impulse current: 4.7kA
Gate current: 150mA
Max. forward voltage: 1.41V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 140A
Max. load current: 220A
Type of module: diode-thyristor
Semiconductor structure: double series
кількість в упаковці: 1 шт
товар відсутній
TD160N16SOFHPSA1 INFINEON TECHNOLOGIES TD160N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. load current: 160A
Max. forward voltage: 1.82V
Load current: 160A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
кількість в упаковці: 1 шт
товар відсутній
TD160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Max. load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
TD175N16SOF INFINEON TECHNOLOGIES TD175N16SOF Diode - thyristor modules
товар відсутній
TD190N16SOFHPSA2 TD190N16SOFHPSA2 INFINEON TECHNOLOGIES TD190N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
кількість в упаковці: 1 шт
товар відсутній
TD190N18SOF INFINEON TECHNOLOGIES TT190N18SOF_TD190N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.8kV
Max. load current: 190A
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
кількість в упаковці: 1 шт
товар відсутній
TD210N12KOF INFINEON TECHNOLOGIES TD210N12KOF Diode - thyristor modules
товар відсутній
TD215N22KOFHPSA1 TD215N22KOFHPSA1 INFINEON TECHNOLOGIES TD215N22KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
кількість в упаковці: 1 шт
товар відсутній
TD240N36KOF INFINEON TECHNOLOGIES TD240N36KOF Diode - thyristor modules
товар відсутній
TD250N16KOF INFINEON TECHNOLOGIES TD250N16KOF Diode - thyristor modules
товар відсутній
TD250N18KOF INFINEON TECHNOLOGIES TD250N18KOF Diode - thyristor modules
товар відсутній
TD280N16SOFHPSA1 INFINEON TECHNOLOGIES TD280N16SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Max. load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
SPP20N60CFD SPP20N60CFD.pdf
SPP20N60CFD
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPP20N60S5 description SPP20N60S5.pdf
SPP20N60S5
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 72 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+643.94 грн
3+ 431.39 грн
7+ 392.94 грн
SPP20N65C3 SPx20N65C3.pdf
SPP20N65C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+518.06 грн
3+ 372.57 грн
9+ 339.88 грн
SPP21N50C3 SPx21N50C3.pdf
SPP21N50C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 46 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+483.2 грн
3+ 419.25 грн
4+ 308.41 грн
10+ 292.23 грн
SPP24N60C3 description SPP24N60C3.pdf
SPP24N60C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPP80P06PHXKSA1 SPP80P06PHXKSA1-DTE.pdf
SPP80P06PHXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 340W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 20 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+292.44 грн
6+ 192.35 грн
16+ 175.34 грн
SPU03N60C3BKMA1 SP_03N60C3.pdf
SPU03N60C3BKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 974 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
4+72.62 грн
5+ 62 грн
21+ 52.15 грн
56+ 49.45 грн
525+ 47.21 грн
Мінімальне замовлення: 4
SPW11N80C3 description SPW11N80C3-DTE.pdf
SPW11N80C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW17N80C3 description SPW17N80C3.pdf
SPW17N80C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 223 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+560.66 грн
3+ 392.18 грн
8+ 357.87 грн
SPW20N60C3 SPW20N60C3.pdf
SPW20N60C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW20N60S5 description SPW20N60S5.pdf
SPW20N60S5
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+591.65 грн
3+ 394.04 грн
8+ 358.77 грн
SPW35N60C3 SPW35N60C3.pdf
SPW35N60C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 26 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+878.28 грн
2+ 743.26 грн
3+ 714.84 грн
5+ 676.17 грн
30+ 650.1 грн
SPW35N60CFD SPW35N60CFD.pdf
SPW35N60CFD
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW47N60C3 SPW47N60C3.pdf
SPW47N60C3
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 112 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна без ПДВ
1+1425.39 грн
2+ 999.11 грн
3+ 961.21 грн
4+ 909.06 грн
SPW47N60CFDFKSA1 SPW47N60CFD.pdf
SPW47N60CFDFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW47N65C3FKSA1 SPW47N65C3F.pdf
SPW47N65C3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SPW55N80C3FKSA1 Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
STT1400N16P55XPSA1 Infineon-STT1400N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc220d0b1754
Виробник: INFINEON TECHNOLOGIES
STT1400N16P55 Thyristor modules
товар відсутній
STT1400N18P55XPSA1 Infineon-STT1400N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99a9775672
Виробник: INFINEON TECHNOLOGIES
STT1400N18P55XPSA1 Thyristor modules
товар відсутній
STT1900N16P55XPSA1 Infineon-STT1900N16P55-DS-v03_01-EN.pdf?fileId=5546d4625f96303e015fd95f11276e7a
Виробник: INFINEON TECHNOLOGIES
STT1900N16P55 Thyristor modules
товар відсутній
STT1900N18P55XPSA1 Infineon-STT1900N18P55-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc999c30566f
Виробник: INFINEON TECHNOLOGIES
STT1900N18P55XPSA1 Thyristor modules
товар відсутній
STT2200N16P55XPSA1 STT2200N16P55.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 2.2kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 2.2kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
STT2200N18P55XPSA1 STT2200N18P55.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
STT3300N16P76XPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 3.3kA; BG-PS55-1; screw; screw
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Load current: 3.3kA
Semiconductor structure: opposing
кількість в упаковці: 1 шт
товар відсутній
STT3300N18P76XPSA1
Виробник: INFINEON TECHNOLOGIES
STT3300N18P76XPSA1 Thyristor modules
товар відсутній
STT800N16P55XPSA1 STT800N16P55.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
кількість в упаковці: 1 шт
товар відсутній
T1190N16TOFVTXPSA1 T1190N_ser.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T7526K-1
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Max. forward impulse current: 22.5kA
кількість в упаковці: 1 шт
товар відсутній
T1590N28TOFVTXPSA1 Infineon-T1590N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc2012409cf7bc2474b
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T10026K-1
Max. off-state voltage: 2.8kV
Max. load current: 3.2kA
Load current: 1.59kA
Gate current: 300mA
Max. forward impulse current: 32kA
кількість в упаковці: 1 шт
товар відсутній
T1901N80TOHXPSA1 T1901N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Case: BG-T15035K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 8kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 350mA
Max. forward impulse current: 67kA
Load current: 2.1kA
Max. load current: 3.3kA
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T3160N16TOFVTXPSA1 T3160N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Case: BG-T11126K-1
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Max. forward impulse current: 63kA
кількість в упаковці: 1 шт
товар відсутній
T3160N18TOFVTXPSA1 T3160N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Max. load current: 7kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T360N22TOFXPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 550A
Load current: 360A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T390N16TOFXPSA1 Infineon-T390N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128636b9b085316
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 600A; 381A; Igt: 150mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 600A
Load current: 381A
Gate current: 150mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 4.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T420N16TOFXPSA1 Infineon-T420N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637bdb055339
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 750A; 424A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 750A
Load current: 424A
Gate current: 200mA
Max. forward impulse current: 7.2kA
кількість в упаковці: 1 шт
товар відсутній
T430N12TOFXPSA1 T430N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 700A; 433A; Igt: 200mA
Kind of package: in-tray
Max. forward impulse current: 5.2kA
Gate current: 200mA
Load current: 433A
Max. load current: 700A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Case: BG-T4214K0-1
Mounting: Press-Pack
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T501N70TOHXPSA1 Infineon-T501N-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b4304de2500a
Виробник: INFINEON TECHNOLOGIES
T501N70TOHXPSA1 Button thyristors
товар відсутній
T560N14TOFXPSA1 T560N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T560N16TOFXPSA1 T560N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T560N18TOFXPSA1 T560N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.8kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T590N14TOFXPSA1 T590N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.4kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T590N18TOFXPSA1 T590N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T640N12TOFXPSA1 T640Nxx.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 644A
Case: BG-T4814K0-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
T720N16TOFXPSA1 T720N16TOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 1.65kA
Load current: 720A
Gate current: 250mA
Max. forward impulse current: 12.5kA
кількість в упаковці: 1 шт
товар відсутній
T740N26TOFXPSA1 T740N_ser.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.6kV; Ifmax: 1.5A; 745A; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.6kV
Max. load current: 1.5A
Load current: 745A
Gate current: 250mA
Case: BG-T5814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 13kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
T830N12TOFXPSA1 T830N.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 844A
Case: BG-T5814K0-1
Max. forward impulse current: 14.5A
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.5kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
товар відсутній
TD104N14KOF
Виробник: INFINEON TECHNOLOGIES
TD104N14KOF Diode - thyristor modules
товар відсутній
TD120N16SOFHPSA1 TD120N16SOF.pdf
TD120N16SOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
кількість в упаковці: 1 шт
товар відсутній
TD122N22KOF
Виробник: INFINEON TECHNOLOGIES
TD122N22KOF Diode - thyristor modules
товар відсутній
TD140N16SOFHPSA1 TD140N16SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; BG-PB34SB-1; Ufmax: 1.41V
Case: BG-PB34SB-1
Max. forward impulse current: 4.7kA
Gate current: 150mA
Max. forward voltage: 1.41V
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Load current: 140A
Max. load current: 220A
Type of module: diode-thyristor
Semiconductor structure: double series
кількість в упаковці: 1 шт
товар відсутній
TD160N16SOFHPSA1 TD160N16SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. load current: 160A
Max. forward voltage: 1.82V
Load current: 160A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
кількість в упаковці: 1 шт
товар відсутній
TD160N18SOF TT160N18SOF_TD160N18SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Max. load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
TD175N16SOF
Виробник: INFINEON TECHNOLOGIES
TD175N16SOF Diode - thyristor modules
товар відсутній
TD190N16SOFHPSA2 TD190N16SOF.pdf
TD190N16SOFHPSA2
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
кількість в упаковці: 1 шт
товар відсутній
TD190N18SOF TT190N18SOF_TD190N18SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 190A; BG-PB34SB-1; Ufmax: 1.52V
Max. forward impulse current: 5.2kA
Case: BG-PB34SB-1
Max. off-state voltage: 1.8kV
Max. load current: 190A
Max. forward voltage: 1.52V
Load current: 190A
Semiconductor structure: double series
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: diode-thyristor
кількість в упаковці: 1 шт
товар відсутній
TD210N12KOF
Виробник: INFINEON TECHNOLOGIES
TD210N12KOF Diode - thyristor modules
товар відсутній
TD215N22KOFHPSA1 TD215N22KOF.pdf
TD215N22KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 215A; BG-PB50-1; Ufmax: 1.8V; screw
Max. forward impulse current: 7kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode-thyristor
Case: BG-PB50-1
Max. off-state voltage: 2.2kV
Max. load current: 410A
Max. forward voltage: 1.8V
Load current: 215A
Semiconductor structure: double series
Gate current: 200mA
кількість в упаковці: 1 шт
товар відсутній
TD240N36KOF
Виробник: INFINEON TECHNOLOGIES
TD240N36KOF Diode - thyristor modules
товар відсутній
TD250N16KOF
Виробник: INFINEON TECHNOLOGIES
TD250N16KOF Diode - thyristor modules
товар відсутній
TD250N18KOF
Виробник: INFINEON TECHNOLOGIES
TD250N18KOF Diode - thyristor modules
товар відсутній
TD280N16SOFHPSA1 TD280N16SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 280A; BG-PB50SB-1; Ufmax: 1.77V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Max. load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
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