Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139452) > Сторінка 1244 з 2325
Фото | Назва | Виробник | Інформація |
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IRL3705NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 10mΩ Mounting: THT Gate charge: 65.3nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 1277 шт: термін постачання 14-21 дні (днів) |
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IRL3705NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 170W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 800 шт |
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IRL3705ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 8mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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IRL3705ZSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 86A Power dissipation: 130W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 800 шт |
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IRL3803PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 6mΩ Mounting: THT Gate charge: 93.3nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 6 шт: термін постачання 14-21 дні (днів) |
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IRL3803STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 140A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 800 шт |
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IRL40B209 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 293A Pulsed drain current: 1707A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.25mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRL40B212 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 179A Power dissipation: 231W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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IRL40B215 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 116A Power dissipation: 143W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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IRL520NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 48W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 0.18Ω Mounting: THT Gate charge: 13.3nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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IRL530NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 3.8W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 844 шт: термін постачання 14-21 дні (днів) |
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IRL540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 44mΩ Mounting: THT Gate charge: 49.3nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 6592 шт: термін постачання 14-21 дні (днів) |
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IRL540NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 803 шт: термін постачання 14-21 дні (днів) |
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IRL60B216 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
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IRL60HS118 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Power dissipation: 5.8W Case: PQFN2X2 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
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IRL6342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8 Mounting: SMD Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: SO8 Drain-source voltage: 30V Drain current: 9.9A On-state resistance: 14.6mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 3451 шт: термін постачання 14-21 дні (днів) |
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IRL6372TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.1A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 17.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 487 шт: термін постачання 14-21 дні (днів) |
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IRL7833PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB Kind of package: tube Drain-source voltage: 30V Drain current: 150A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 32nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO220AB кількість в упаковці: 1 шт |
на замовлення 74 шт: термін постачання 14-21 дні (днів) |
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IRL7833STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK Kind of package: reel Drain-source voltage: 30V Drain current: 150A Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: D2PAK кількість в упаковці: 800 шт |
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IRL80HS120 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2 Mounting: SMD Case: PQFN2X2 Drain-source voltage: 80V Drain current: 9A On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 5.8W Polarisation: unipolar Kind of package: reel Gate charge: 4.7nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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IRLB3034PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 343A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 202 шт: термін постачання 14-21 дні (днів) |
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IRLB3036PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 95 шт: термін постачання 14-21 дні (днів) |
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IRLB3813PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB Case: TO220AB Drain-source voltage: 30V Drain current: 260A On-state resistance: 1.95mΩ Type of transistor: N-MOSFET Power dissipation: 230W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: logic level Gate charge: 57nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT кількість в упаковці: 1 шт |
на замовлення 69 шт: термін постачання 14-21 дні (днів) |
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IRLB4030PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB Mounting: THT Type of transistor: N-MOSFET Power dissipation: 370W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: logic level Gate charge: 87nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±16V Case: TO220AB Drain-source voltage: 100V Drain current: 180A On-state resistance: 4.3mΩ кількість в упаковці: 1 шт |
на замовлення 125 шт: термін постачання 14-21 дні (днів) |
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IRLB4132PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 620A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 163 шт: термін постачання 14-21 дні (днів) |
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IRLB8314PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB Drain-source voltage: 30V Drain current: 120A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 664A Mounting: THT Case: TO220AB кількість в упаковці: 1 шт |
на замовлення 78 шт: термін постачання 14-21 дні (днів) |
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IRLB8721PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 62A Power dissipation: 65W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: THT Gate charge: 7.6nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 2013 шт: термін постачання 14-21 дні (днів) |
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IRLB8743PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain-source voltage: 30V Drain current: 150A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 36nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 995 шт: термін постачання 14-21 дні (днів) |
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IRLB8748PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 92A Power dissipation: 75W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 132 шт: термін постачання 14-21 дні (днів) |
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IRLH5030TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 4000 шт |
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IRLH5034TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6 Mounting: SMD Power dissipation: 3.6W Polarisation: unipolar Technology: HEXFET® Features of semiconductor devices: logic level Drain current: 29A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Case: PQFN5X6 кількість в упаковці: 1 шт |
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IRLHM620TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 40A Power dissipation: 2.7W Case: PQFN3.3X3.3 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 4000 шт |
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IRLHM630TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3 Kind of package: reel Technology: HEXFET® Drain-source voltage: 30V Drain current: 21A Type of transistor: N-MOSFET Power dissipation: 2.7W Polarisation: unipolar Features of semiconductor devices: logic level Kind of channel: enhanced Mounting: SMD Case: PQFN3.3X3.3 кількість в упаковці: 4000 шт |
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IRLHS2242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3 Case: PQFN3.3X3.3 Mounting: SMD Kind of package: reel Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: -20V Drain current: -7.2A Type of transistor: P-MOSFET Power dissipation: 2.1W кількість в упаковці: 1 шт |
на замовлення 3894 шт: термін постачання 14-21 дні (днів) |
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IRLHS6242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2 Mounting: SMD Power dissipation: 1.98W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Case: PQFN2X2 Drain-source voltage: 20V Drain current: 10A Type of transistor: N-MOSFET кількість в упаковці: 4000 шт |
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IRLHS6276TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Kind of package: reel Drain-source voltage: 20V Drain current: 12A Type of transistor: N-MOSFET x2 Power dissipation: 4.5W Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: PQFN2X2 кількість в упаковці: 4000 шт |
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IRFHM6342TR2PBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2 Mounting: SMD Case: PQFN2X2 Power dissipation: 2.1W Polarisation: unipolar Type of transistor: N-MOSFET Drain current: 8.5A Drain-source voltage: 30V Features of semiconductor devices: logic level Gate charge: 11nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±12V On-state resistance: 15.5mΩ кількість в упаковці: 4000 шт |
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IRLHS6376TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2 Case: PQFN2X2 Mounting: SMD Kind of package: reel Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 30V Drain current: 3.6A Type of transistor: N-MOSFET Power dissipation: 1.5W кількість в упаковці: 1 шт |
на замовлення 3874 шт: термін постачання 14-21 дні (днів) |
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IRLL014NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 2A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 2186 шт: термін постачання 14-21 дні (днів) |
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IRLL024NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 2958 шт: термін постачання 14-21 дні (днів) |
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IRLL024ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4A Pulsed drain current: 40A Power dissipation: 1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 60mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2672 шт: термін постачання 14-21 дні (днів) |
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IRLL2703TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 16A Power dissipation: 1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 45mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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IRLL2705TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 3.8A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 3002 шт: термін постачання 14-21 дні (днів) |
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IRLML0030TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 8798 шт: термін постачання 14-21 дні (днів) |
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IRLML0040TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.6A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 6849 шт: термін постачання 14-21 дні (днів) |
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IRLML0060TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.7A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 9123 шт: термін постачання 14-21 дні (днів) |
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IRLML0100TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 17099 шт: термін постачання 14-21 дні (днів) |
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IRLML2030TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.7A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 8614 шт: термін постачання 14-21 дні (днів) |
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IRLML2060TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 2918 шт: термін постачання 14-21 дні (днів) |
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IRLML2244TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.3A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 5739 шт: термін постачання 14-21 дні (днів) |
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IRLML2246TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 4050 шт: термін постачання 14-21 дні (днів) |
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IRLML2402TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 0.54W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Power dissipation: 0.54W Case: SOT23 On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level Part status: Not recommended for new designs кількість в упаковці: 1 шт |
на замовлення 141 шт: термін постачання 14-21 дні (днів) |
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IRLML2502TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 7412 шт: термін постачання 14-21 дні (днів) |
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IRLML2803TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.2A Power dissipation: 0.4W Case: SOT23 On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 1971 шт: термін постачання 14-21 дні (днів) |
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IRLML5103TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.61A Power dissipation: 0.54W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
товар відсутній |
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IRLML5203TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 8349 шт: термін постачання 14-21 дні (днів) |
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IRLML6244TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Gate charge: 8.9nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 24434 шт: термін постачання 14-21 дні (днів) |
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IRLML6246TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 46mΩ Mounting: SMD Gate charge: 3.5nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 10530 шт: термін постачання 14-21 дні (днів) |
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IRLML6302PBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.62A Power dissipation: 0.54W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 2.4nC Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 2860 шт: термін постачання 14-21 дні (днів) |
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IRLML6302TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.78A; 0.54W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.78A Power dissipation: 0.54W Case: SOT23 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level кількість в упаковці: 1 шт |
на замовлення 3580 шт: термін постачання 14-21 дні (днів) |
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IRL3705NPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1277 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 133.63 грн |
18+ | 63.5 грн |
48+ | 57.55 грн |
IRL3705NSTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
товар відсутній
IRL3705ZPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
IRL3705ZSTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
товар відсутній
IRL3803PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 197.54 грн |
10+ | 130.72 грн |
13+ | 86.32 грн |
34+ | 81.82 грн |
1000+ | 79.13 грн |
IRL3803STRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 800 шт
товар відсутній
IRL40B209 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRL40B212 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
IRL40B215 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
IRL520NPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
IRL530NSTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 844 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.23 грн |
10+ | 93.56 грн |
24+ | 44.96 грн |
65+ | 42.53 грн |
5600+ | 40.82 грн |
IRL540NPBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 6592 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.31 грн |
10+ | 67.6 грн |
32+ | 33.72 грн |
86+ | 31.92 грн |
5000+ | 30.57 грн |
IRL540NSTRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 803 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 147.19 грн |
10+ | 123.26 грн |
18+ | 59.34 грн |
49+ | 56.65 грн |
IRL60B216 |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
IRL60HS118 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IRL6342TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Drain-source voltage: 30V
Drain current: 9.9A
On-state resistance: 14.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Drain-source voltage: 30V
Drain current: 9.9A
On-state resistance: 14.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 3451 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.21 грн |
25+ | 26.71 грн |
47+ | 22.3 грн |
129+ | 21.13 грн |
4000+ | 20.23 грн |
IRL6372TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 17.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 17.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 487 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 61 грн |
10+ | 51.26 грн |
37+ | 28.68 грн |
101+ | 27.15 грн |
4000+ | 26.08 грн |
IRL7833PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Kind of package: tube
Drain-source voltage: 30V
Drain current: 150A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 32nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Kind of package: tube
Drain-source voltage: 30V
Drain current: 150A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 32nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
кількість в упаковці: 1 шт
на замовлення 74 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 149.12 грн |
10+ | 114.85 грн |
14+ | 80.03 грн |
37+ | 75.53 грн |
IRL7833STRLPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Drain-source voltage: 30V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Drain-source voltage: 30V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
кількість в упаковці: 800 шт
товар відсутній
IRL80HS120 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Drain-source voltage: 80V
Drain current: 9A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.8W
Polarisation: unipolar
Kind of package: reel
Gate charge: 4.7nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Drain-source voltage: 80V
Drain current: 9A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.8W
Polarisation: unipolar
Kind of package: reel
Gate charge: 4.7nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IRLB3034PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 202 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 251.77 грн |
6+ | 186.75 грн |
17+ | 169.04 грн |
100+ | 165.45 грн |
250+ | 162.75 грн |
IRLB3036PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 95 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 335.04 грн |
5+ | 229.7 грн |
14+ | 208.61 грн |
IRLB3813PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 30V
Drain current: 260A
On-state resistance: 1.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 57nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 30V
Drain current: 260A
On-state resistance: 1.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 57nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 69 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.19 грн |
10+ | 106.1 грн |
12+ | 92.61 грн |
32+ | 87.22 грн |
IRLB4030PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 87nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 4.3mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 87nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 4.3mΩ
кількість в упаковці: 1 шт
на замовлення 125 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 261.45 грн |
7+ | 165.27 грн |
19+ | 150.16 грн |
500+ | 146.56 грн |
1000+ | 143.87 грн |
IRLB4132PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 163 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.62 грн |
6+ | 47.43 грн |
25+ | 40.46 грн |
31+ | 34.98 грн |
83+ | 33.09 грн |
IRLB8314PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 664A
Mounting: THT
Case: TO220AB
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 664A
Mounting: THT
Case: TO220AB
кількість в упаковці: 1 шт
на замовлення 78 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 80.37 грн |
10+ | 65.55 грн |
31+ | 34.62 грн |
84+ | 32.73 грн |
5000+ | 31.74 грн |
IRLB8721PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 2013 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.24 грн |
10+ | 59.39 грн |
29+ | 37.32 грн |
78+ | 35.25 грн |
10000+ | 34.71 грн |
IRLB8743PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 30V
Drain current: 150A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 36nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: 30V
Drain current: 150A
On-state resistance: 3.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 36nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 995 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.83 грн |
10+ | 62.04 грн |
20+ | 53.05 грн |
55+ | 50.35 грн |
IRLB8748PBF |
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 132 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.24 грн |
10+ | 56.49 грн |
33+ | 32.19 грн |
90+ | 30.39 грн |
10000+ | 29.49 грн |
IRLH5030TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4000 шт
товар відсутній
IRLH5034TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: PQFN5X6
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: PQFN5X6
кількість в упаковці: 1 шт
товар відсутній
IRLHM620TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 4000 шт
товар відсутній
IRLHM630TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Kind of package: reel
Technology: HEXFET®
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhanced
Mounting: SMD
Case: PQFN3.3X3.3
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Kind of package: reel
Technology: HEXFET®
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhanced
Mounting: SMD
Case: PQFN3.3X3.3
кількість в упаковці: 4000 шт
товар відсутній
IRLHS2242TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
кількість в упаковці: 1 шт
на замовлення 3894 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.02 грн |
50+ | 21.48 грн |
78+ | 13.58 грн |
213+ | 12.86 грн |
650+ | 12.77 грн |
1000+ | 12.41 грн |
IRLHS6242TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Mounting: SMD
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 10A
Type of transistor: N-MOSFET
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Mounting: SMD
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 10A
Type of transistor: N-MOSFET
кількість в упаковці: 4000 шт
товар відсутній
IRLHS6276TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Kind of package: reel
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN2X2
кількість в упаковці: 4000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Kind of package: reel
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN2X2
кількість в упаковці: 4000 шт
товар відсутній
IRFHM6342TR2PBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 8.5A
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Gate charge: 11nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 15.5mΩ
кількість в упаковці: 4000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 8.5A
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Gate charge: 11nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 15.5mΩ
кількість в упаковці: 4000 шт
товар відсутній
IRLHS6376TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 1.5W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 1.5W
кількість в упаковці: 1 шт
на замовлення 3874 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.11 грн |
25+ | 23.53 грн |
61+ | 17.35 грн |
167+ | 16.36 грн |
IRLL014NTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 2186 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 51.32 грн |
10+ | 44.73 грн |
50+ | 34.53 грн |
61+ | 17.35 грн |
167+ | 16.36 грн |
IRLL024NTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 2958 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.94 грн |
48+ | 23.06 грн |
131+ | 20.95 грн |
7500+ | 20.32 грн |
10000+ | 20.14 грн |
IRLL024ZTRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2672 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 122.01 грн |
6+ | 51.17 грн |
25+ | 44.24 грн |
32+ | 33.99 грн |
86+ | 32.1 грн |
IRLL2703TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IRLL2705TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 3002 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 69.72 грн |
10+ | 57.05 грн |
37+ | 28.41 грн |
102+ | 26.89 грн |
5000+ | 25.9 грн |
IRLML0030TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 8798 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.08 грн |
15+ | 18.96 грн |
25+ | 14.66 грн |
100+ | 10.97 грн |
140+ | 7.55 грн |
384+ | 7.19 грн |
3000+ | 7.1 грн |
IRLML0040TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 6849 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.02 грн |
13+ | 22.5 грн |
50+ | 15.38 грн |
100+ | 13.13 грн |
140+ | 7.55 грн |
384+ | 7.19 грн |
30000+ | 6.83 грн |
IRLML0060TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 9123 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.86 грн |
11+ | 26.14 грн |
13+ | 21.58 грн |
50+ | 15.47 грн |
100+ | 13.49 грн |
140+ | 7.55 грн |
384+ | 7.19 грн |
IRLML0100TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 17099 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 18.4 грн |
22+ | 13.26 грн |
100+ | 10.79 грн |
142+ | 7.46 грн |
390+ | 7.01 грн |
IRLML2030TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 8614 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15+ | 20.34 грн |
22+ | 12.79 грн |
50+ | 8.2 грн |
100+ | 7 грн |
213+ | 4.96 грн |
585+ | 4.68 грн |
1000+ | 4.61 грн |
IRLML2060TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 2918 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 25.18 грн |
17+ | 17.37 грн |
100+ | 9.98 грн |
171+ | 6.2 грн |
468+ | 5.84 грн |
9000+ | 5.66 грн |
IRLML2244TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 5739 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.99 грн |
16+ | 18.39 грн |
50+ | 12.59 грн |
100+ | 10.97 грн |
171+ | 6.2 грн |
468+ | 5.84 грн |
IRLML2246TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 4050 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 34.86 грн |
14+ | 21.2 грн |
25+ | 15.74 грн |
100+ | 9.44 грн |
194+ | 5.48 грн |
533+ | 5.13 грн |
IRLML2402TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 0.54W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 0.54W
Case: SOT23
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; 0.54W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 0.54W
Case: SOT23
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Part status: Not recommended for new designs
кількість в упаковці: 1 шт
на замовлення 141 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 18.4 грн |
19+ | 15.31 грн |
25+ | 12.59 грн |
50+ | 10.79 грн |
100+ | 9.08 грн |
174+ | 6.1 грн |
477+ | 5.75 грн |
IRLML2502TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 7412 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.67 грн |
10+ | 29.41 грн |
20+ | 24.82 грн |
50+ | 19.42 грн |
100+ | 15.92 грн |
125+ | 8.45 грн |
342+ | 8 грн |
IRLML2803TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 1971 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.02 грн |
14+ | 21.1 грн |
16+ | 17.53 грн |
50+ | 12.5 грн |
100+ | 10.88 грн |
138+ | 7.64 грн |
380+ | 7.19 грн |
IRLML5103TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
товар відсутній
IRLML5203TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 8349 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.8 грн |
15+ | 19.61 грн |
50+ | 13.85 грн |
100+ | 12.14 грн |
152+ | 6.92 грн |
417+ | 6.56 грн |
IRLML6244TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 24434 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 30.02 грн |
13+ | 22.32 грн |
50+ | 15.56 грн |
100+ | 13.49 грн |
175+ | 6.02 грн |
478+ | 5.75 грн |
IRLML6246TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 10530 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.3 грн |
19+ | 15.03 грн |
25+ | 11.22 грн |
100+ | 7.35 грн |
218+ | 4.84 грн |
600+ | 4.58 грн |
99000+ | 4.53 грн |
IRLML6302PBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.62A
Power dissipation: 0.54W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 2860 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.98 грн |
28+ | 10.27 грн |
100+ | 7.91 грн |
146+ | 7.28 грн |
400+ | 6.83 грн |
3000+ | 6.65 грн |
IRLML6302TRPBF |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.78A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.78A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.78A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.78A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
кількість в упаковці: 1 шт
на замовлення 3580 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.14 грн |
15+ | 19.98 грн |
50+ | 13.94 грн |
100+ | 12.05 грн |
141+ | 7.46 грн |
389+ | 7.1 грн |
30000+ | 6.92 грн |