Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139469) > Сторінка 1225 з 2325
Фото | Назва | Виробник | Інформація |
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IPD200N15N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 40A Pulsed drain current: 200A Power dissipation: 150W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD25CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD25N06S4L30ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 92A Power dissipation: 29W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 30mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD26N06S2L35ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 22A Pulsed drain current: 120A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD30N03S4L09ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W Polarisation: unipolar Power dissipation: 42W Type of transistor: N-MOSFET On-state resistance: 9mΩ Drain current: 30A Gate charge: 15nC Drain-source voltage: 30V Technology: OptiMOS™ T2 Kind of channel: enhanced Gate-source voltage: ±16V Case: PG-TO252-3 Mounting: SMD кількість в упаковці: 2500 шт |
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IPD30N08S222ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 21.5mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD30N08S2L21ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 75V Drain current: 30A Pulsed drain current: 120A Power dissipation: 136W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD30N10S3L34ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 120A Power dissipation: 57W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD33CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 108A Power dissipation: 58W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD350N06LGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 116A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1386 шт: термін постачання 14-21 дні (днів) |
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IPD35N10S3L26ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Pulsed drain current: 140A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N04S408ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A Case: PG-TO252-3-313 Mounting: SMD Technology: OptiMOS® -T2 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 40V Drain current: 47A On-state resistance: 7.9mΩ Type of transistor: N-MOSFET Power dissipation: 46W Polarisation: unipolar кількість в упаковці: 2500 шт |
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IPD50N04S4L08ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 49A Pulsed drain current: 200A Power dissipation: 46W Case: PG-TO252-3-313 Gate-source voltage: -16...20V On-state resistance: 7.3mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N06S409ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N06S4L08ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A Type of transistor: N-MOSFET Technology: OptiMOS® -T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 47A Pulsed drain current: 200A Power dissipation: 71W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50N06S4L12ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 50W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 12mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2092 шт: термін постачання 14-21 дні (днів) |
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IPD50N10S3L16ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A Polarisation: unipolar Technology: OptiMOS® -T Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Mounting: SMD Case: PG-TO252-3-11 Drain-source voltage: 100V Drain current: 38A On-state resistance: 15mΩ Type of transistor: N-MOSFET Power dissipation: 100W кількість в упаковці: 2500 шт |
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IPD50P03P4L11ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W Drain-source voltage: -30V Drain current: -42A On-state resistance: 10.5mΩ Type of transistor: P-MOSFET Power dissipation: 58W Polarisation: unipolar Case: PG-TO252-3-11 Mounting: SMD Technology: OptiMOS® -P2 Kind of channel: enhanced Gate-source voltage: -5...16V Pulsed drain current: -200A кількість в упаковці: 2500 шт |
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IPD50P04P413ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -45A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD50P04P4L11ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -40A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: -16...5V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R399CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R399CPBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.399Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R500CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Pulsed drain current: 24A Power dissipation: 57W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R520CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R520CPBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.1A Power dissipation: 66W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.52Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD50R950CEATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.3A Power dissipation: 34W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD5N25S3430ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W Mounting: SMD Drain-source voltage: 250V Drain current: 4A On-state resistance: 0.43Ω Type of transistor: N-MOSFET Power dissipation: 41W Polarisation: unipolar Technology: OptiMOS™ T Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Case: PG-TO252-3-313 кількість в упаковці: 2500 шт |
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IPD600N25N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W Power dissipation: 136W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 250V Drain current: 18A On-state resistance: 60mΩ кількість в упаковці: 2500 шт |
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IPD60R170CFD7 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 76W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.325Ω Mounting: SMD Gate charge: 28nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD60R1K0PFD7SAUMA1 | INFINEON TECHNOLOGIES | IPD60R1K0PFD7S SMD N channel transistors |
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IPD60R1K5PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A Case: TO252 Mounting: SMD On-state resistance: 2.892Ω Gate-source voltage: ±20V Pulsed drain current: 6A Power dissipation: 22W Polarisation: unipolar Technology: CoolMOS™ PFD7 Features of semiconductor devices: ESD protected gate Drain current: 2.2A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
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IPD60R210PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A Mounting: SMD Power dissipation: 64W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 386mΩ Drain current: 10A Drain-source voltage: 600V Case: TO252 Technology: CoolMOS™ PFD7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 42A кількість в упаковці: 2500 шт |
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IPD60R280CFD7 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 51W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.536Ω Mounting: SMD Gate charge: 18nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPD60R280P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3 Drain-source voltage: 600V Drain current: 8A On-state resistance: 0.28Ω Type of transistor: N-MOSFET Power dissipation: 53W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 18nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO252-3 кількість в упаковці: 1 шт |
на замовлення 2302 шт: термін постачання 14-21 дні (днів) |
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IPD60R280P7S | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3 Polarisation: unipolar Power dissipation: 53W Type of transistor: N-MOSFET On-state resistance: 0.28Ω Drain current: 8A Features of semiconductor devices: ESD protected gate Gate charge: 18nC Drain-source voltage: 600V Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TO252-3 Mounting: SMD кількість в упаковці: 1 шт |
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IPD60R280PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A Technology: CoolMOS™ PFD7 Mounting: SMD Power dissipation: 51W Features of semiconductor devices: ESD protected gate Case: TO252 Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 549mΩ Pulsed drain current: 31A кількість в упаковці: 2500 шт |
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IPD60R2K0C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 22.3W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD60R2K0PFD7SAUMA1 | INFINEON TECHNOLOGIES | IPD60R2K0PFD7S SMD N channel transistors |
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IPD60R360P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 41W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 13nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
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IPD60R360PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A Technology: CoolMOS™ PFD7 Mounting: SMD Case: PG-TO252-3 Power dissipation: 43W Polarisation: unipolar Version: ESD Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain-source voltage: 600V Drain current: 6A On-state resistance: 715mΩ Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
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IPD60R380C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.7A Pulsed drain current: 30A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD60R385CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 27A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD60R3K3C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.1A Pulsed drain current: 4A Power dissipation: 18.1W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD60R400CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.3A Pulsed drain current: 30A Power dissipation: 112W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD60R600C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 19A Power dissipation: 63W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
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IPD60R600P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 On-state resistance: 0.6Ω Drain current: 4A Drain-source voltage: 600V Power dissipation: 30W Polarisation: unipolar Case: PG-TO252-3 Features of semiconductor devices: ESD protected gate Gate charge: 9nC Technology: CoolMOS™ P7 Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 16A кількість в упаковці: 1 шт |
товар відсутній |
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IPD60R600P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 Drain-source voltage: 600V Drain current: 4A On-state resistance: 0.6Ω Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 9nC Technology: CoolMOS™ P7 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 16A Mounting: SMD Case: PG-TO252-3 кількість в упаковці: 1 шт |
на замовлення 2378 шт: термін постачання 14-21 дні (днів) |
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IPD60R600PFD7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 14A Power dissipation: 31W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.219Ω Mounting: SMD Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R650CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W Drain-source voltage: 600V Drain current: 6.2A On-state resistance: 0.65Ω Type of transistor: N-MOSFET Power dissipation: 82W Polarisation: unipolar Gate charge: 20.5nC Technology: CoolMOS™ CE Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 19A Mounting: SMD Case: PG-TO252-3 кількість в упаковці: 1 шт |
на замовлення 2206 шт: термін постачання 14-21 дні (днів) |
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IPD640N06LGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W Type of transistor: N-MOSFET Technology: OptiMOS® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 72A Power dissipation: 47W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 2500 шт |
товар відсутній |
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IPD65R190C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.19Ω Power dissipation: 28W Technology: CoolMOS™ Polarisation: unipolar Drain current: 3.2A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 2500 шт |
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IPD65R1K4CFDBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 1.4Ω Power dissipation: 28.4W Technology: CoolMOS™ Polarisation: unipolar Drain current: 2.8A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 1 шт |
товар відсутній |
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IPD65R225C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.225Ω Power dissipation: 63W Technology: CoolMOS™ Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 2500 шт |
товар відсутній |
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IPD65R250C6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.25Ω Power dissipation: 208.3W Technology: CoolMOS™ Polarisation: unipolar Drain current: 16.1A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 2500 шт |
товар відсутній |
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IPD65R250E6XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.25Ω Power dissipation: 208W Technology: CoolMOS™ Polarisation: unipolar Drain current: 16.1A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 1 шт |
товар відсутній |
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IPD65R380C6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.38Ω Power dissipation: 83W Technology: CoolMOS™ Polarisation: unipolar Drain current: 10.6A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 1 шт |
товар відсутній |
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IPD65R380E6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.38Ω Power dissipation: 83W Technology: CoolMOS™ Polarisation: unipolar Drain current: 10.6A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 1 шт |
товар відсутній |
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IPD65R380E6BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.38Ω Power dissipation: 83W Technology: CoolMOS™ Polarisation: unipolar Drain current: 10.6A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 1 шт |
товар відсутній |
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IPD65R400CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252 On-state resistance: 0.4Ω Power dissipation: 118W Technology: CoolMOS™ CE Polarisation: unipolar Drain current: 9.5A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 700V Pulsed drain current: 30A кількість в упаковці: 2500 шт |
товар відсутній |
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IPD65R420CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3 Type of transistor: N-MOSFET Mounting: SMD Case: PG-TO252-3 On-state resistance: 0.42Ω Power dissipation: 83.3W Technology: CoolMOS™ Polarisation: unipolar Drain current: 8.7A Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V кількість в упаковці: 1 шт |
товар відсутній |
IPD200N15N3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Pulsed drain current: 200A
Power dissipation: 150W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD25CN10NGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 140A; 71W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD25N06S4L30ATMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD26N06S2L35ATMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 22A
Pulsed drain current: 120A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD30N03S4L09ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Polarisation: unipolar
Power dissipation: 42W
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Drain current: 30A
Gate charge: 15nC
Drain-source voltage: 30V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Polarisation: unipolar
Power dissipation: 42W
Type of transistor: N-MOSFET
On-state resistance: 9mΩ
Drain current: 30A
Gate charge: 15nC
Drain-source voltage: 30V
Technology: OptiMOS™ T2
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 2500 шт
товар відсутній
IPD30N08S222ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 30A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 21.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD30N08S2L21ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 136W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 75V; 30A; Idm: 120A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 136W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD30N10S3L34ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 57W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 20A; Idm: 120A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 57W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 31mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD33CN10NGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD350N06LGBTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1386 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.75 грн |
7+ | 42.02 грн |
25+ | 35.7 грн |
34+ | 31.02 грн |
94+ | 29.31 грн |
500+ | 29.04 грн |
IPD35N10S3L26ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N04S408ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Technology: OptiMOS® -T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 47A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 46W
Polarisation: unipolar
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 47A; Idm: 200A
Case: PG-TO252-3-313
Mounting: SMD
Technology: OptiMOS® -T2
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 47A
On-state resistance: 7.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 46W
Polarisation: unipolar
кількість в упаковці: 2500 шт
товар відсутній
IPD50N04S4L08ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 40V; 49A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 200A
Power dissipation: 46W
Case: PG-TO252-3-313
Gate-source voltage: -16...20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N06S409ATMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N06S4L08ATMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50N06S4L12ATMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2092 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 104.58 грн |
5+ | 68.35 грн |
20+ | 53.23 грн |
25+ | 53.14 грн |
55+ | 50.26 грн |
500+ | 48.73 грн |
IPD50N10S3L16ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: PG-TO252-3-11
Drain-source voltage: 100V
Drain current: 38A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Mounting: SMD
Case: PG-TO252-3-11
Drain-source voltage: 100V
Drain current: 38A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
кількість в упаковці: 2500 шт
товар відсутній
IPD50P03P4L11ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -200A
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -30V; -42A; 58W
Drain-source voltage: -30V
Drain current: -42A
On-state resistance: 10.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Case: PG-TO252-3-11
Mounting: SMD
Technology: OptiMOS® -P2
Kind of channel: enhanced
Gate-source voltage: -5...16V
Pulsed drain current: -200A
кількість в упаковці: 2500 шт
товар відсутній
IPD50P04P413ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD50P04P4L11ATMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R399CPATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R399CPBTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.399Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R500CEAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; Idm: 24A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 57W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R520CPATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R520CPBTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.1A
Power dissipation: 66W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.52Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD50R950CEATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.3A
Power dissipation: 34W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.3A; 34W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.3A
Power dissipation: 34W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD5N25S3430ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W
Mounting: SMD
Drain-source voltage: 250V
Drain current: 4A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: PG-TO252-3-313
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 4A; Idm: 20A; 41W
Mounting: SMD
Drain-source voltage: 250V
Drain current: 4A
On-state resistance: 0.43Ω
Type of transistor: N-MOSFET
Power dissipation: 41W
Polarisation: unipolar
Technology: OptiMOS™ T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: PG-TO252-3-313
кількість в упаковці: 2500 шт
товар відсутній
IPD600N25N3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 250V
Drain current: 18A
On-state resistance: 60mΩ
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 18A; Idm: 100A; 136W
Power dissipation: 136W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 250V
Drain current: 18A
On-state resistance: 60mΩ
кількість в упаковці: 2500 шт
товар відсутній
IPD60R170CFD7 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 76W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 76W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD60R1K0PFD7SAUMA1 |
Виробник: INFINEON TECHNOLOGIES
IPD60R1K0PFD7S SMD N channel transistors
IPD60R1K0PFD7S SMD N channel transistors
товар відсутній
IPD60R1K5PFD7SAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Case: TO252
Mounting: SMD
On-state resistance: 2.892Ω
Gate-source voltage: ±20V
Pulsed drain current: 6A
Power dissipation: 22W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Features of semiconductor devices: ESD protected gate
Drain current: 2.2A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A
Case: TO252
Mounting: SMD
On-state resistance: 2.892Ω
Gate-source voltage: ±20V
Pulsed drain current: 6A
Power dissipation: 22W
Polarisation: unipolar
Technology: CoolMOS™ PFD7
Features of semiconductor devices: ESD protected gate
Drain current: 2.2A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
IPD60R210PFD7SAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Mounting: SMD
Power dissipation: 64W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 386mΩ
Drain current: 10A
Drain-source voltage: 600V
Case: TO252
Technology: CoolMOS™ PFD7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 10A; Idm: 42A
Mounting: SMD
Power dissipation: 64W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 386mΩ
Drain current: 10A
Drain-source voltage: 600V
Case: TO252
Technology: CoolMOS™ PFD7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 42A
кількість в упаковці: 2500 шт
товар відсутній
IPD60R280CFD7 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 51W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD60R280P7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Drain-source voltage: 600V
Drain current: 8A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Drain-source voltage: 600V
Drain current: 8A
On-state resistance: 0.28Ω
Type of transistor: N-MOSFET
Power dissipation: 53W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
кількість в упаковці: 1 шт
на замовлення 2302 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 107.48 грн |
5+ | 92.44 грн |
25+ | 81.82 грн |
IPD60R280P7S |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO252-3
Polarisation: unipolar
Power dissipation: 53W
Type of transistor: N-MOSFET
On-state resistance: 0.28Ω
Drain current: 8A
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Drain-source voltage: 600V
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TO252-3
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
IPD60R280PFD7SAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Technology: CoolMOS™ PFD7
Mounting: SMD
Power dissipation: 51W
Features of semiconductor devices: ESD protected gate
Case: TO252
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Pulsed drain current: 31A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 7A; Idm: 31A
Technology: CoolMOS™ PFD7
Mounting: SMD
Power dissipation: 51W
Features of semiconductor devices: ESD protected gate
Case: TO252
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 549mΩ
Pulsed drain current: 31A
кількість в упаковці: 2500 шт
товар відсутній
IPD60R2K0C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 22.3W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R2K0PFD7SAUMA1 |
Виробник: INFINEON TECHNOLOGIES
IPD60R2K0PFD7S SMD N channel transistors
IPD60R2K0PFD7S SMD N channel transistors
товар відсутній
IPD60R360P7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
IPD60R360PFD7SAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Technology: CoolMOS™ PFD7
Mounting: SMD
Case: PG-TO252-3
Power dissipation: 43W
Polarisation: unipolar
Version: ESD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 715mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Technology: CoolMOS™ PFD7
Mounting: SMD
Case: PG-TO252-3
Power dissipation: 43W
Polarisation: unipolar
Version: ESD
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 24A
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 715mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
IPD60R380C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.7A; Idm: 30A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.7A
Pulsed drain current: 30A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R385CPATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R3K3C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; Idm: 4A; 18.1W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Pulsed drain current: 4A
Power dissipation: 18.1W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R400CEAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.3A; Idm: 30A; 112W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.3A
Pulsed drain current: 30A
Power dissipation: 112W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R600C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 19A; 63W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 19A
Power dissipation: 63W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD60R600P7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
On-state resistance: 0.6Ω
Drain current: 4A
Drain-source voltage: 600V
Power dissipation: 30W
Polarisation: unipolar
Case: PG-TO252-3
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 16A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
On-state resistance: 0.6Ω
Drain current: 4A
Drain-source voltage: 600V
Power dissipation: 30W
Polarisation: unipolar
Case: PG-TO252-3
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Mounting: SMD
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 16A
кількість в упаковці: 1 шт
товар відсутній
IPD60R600P7SAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Drain-source voltage: 600V
Drain current: 4A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Mounting: SMD
Case: PG-TO252-3
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Drain-source voltage: 600V
Drain current: 4A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 9nC
Technology: CoolMOS™ P7
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 16A
Mounting: SMD
Case: PG-TO252-3
кількість в упаковці: 1 шт
на замовлення 2378 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 64.88 грн |
37+ | 29.6 грн |
102+ | 26.98 грн |
1000+ | 26.26 грн |
2500+ | 25.99 грн |
IPD60R600PFD7SAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 14A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.219Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 4A; Idm: 14A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 14A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.219Ω
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 2500 шт
товар відсутній
IPD60R650CEAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Drain-source voltage: 600V
Drain current: 6.2A
On-state resistance: 0.65Ω
Type of transistor: N-MOSFET
Power dissipation: 82W
Polarisation: unipolar
Gate charge: 20.5nC
Technology: CoolMOS™ CE
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 19A
Mounting: SMD
Case: PG-TO252-3
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Drain-source voltage: 600V
Drain current: 6.2A
On-state resistance: 0.65Ω
Type of transistor: N-MOSFET
Power dissipation: 82W
Polarisation: unipolar
Gate charge: 20.5nC
Technology: CoolMOS™ CE
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 19A
Mounting: SMD
Case: PG-TO252-3
кількість в упаковці: 1 шт
на замовлення 2206 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62 грн |
22+ | 50.35 грн |
58+ | 47.66 грн |
500+ | 44.96 грн |
IPD640N06LGBTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Technology: OptiMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
IPD65R190C7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.19Ω
Power dissipation: 28W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.19Ω
Power dissipation: 28W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 3.2A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 2500 шт
товар відсутній
IPD65R1K4CFDBTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 1.4Ω
Power dissipation: 28.4W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 2.8A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 1.4Ω
Power dissipation: 28.4W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 2.8A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IPD65R225C7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.225Ω
Power dissipation: 63W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.225Ω
Power dissipation: 63W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 2500 шт
товар відсутній
IPD65R250C6XTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.25Ω
Power dissipation: 208.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 16.1A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.25Ω
Power dissipation: 208.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 16.1A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 2500 шт
товар відсутній
IPD65R250E6XTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.25Ω
Power dissipation: 208W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 16.1A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.25Ω
Power dissipation: 208W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 16.1A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IPD65R380C6BTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.38Ω
Power dissipation: 83W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 10.6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.38Ω
Power dissipation: 83W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 10.6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IPD65R380E6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.38Ω
Power dissipation: 83W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 10.6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.38Ω
Power dissipation: 83W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 10.6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IPD65R380E6BTMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.38Ω
Power dissipation: 83W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 10.6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.38Ω
Power dissipation: 83W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 10.6A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній
IPD65R400CEAUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252
On-state resistance: 0.4Ω
Power dissipation: 118W
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 700V
Pulsed drain current: 30A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252
On-state resistance: 0.4Ω
Power dissipation: 118W
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 700V
Pulsed drain current: 30A
кількість в упаковці: 2500 шт
товар відсутній
IPD65R420CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 8.7A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 0.42Ω
Power dissipation: 83.3W
Technology: CoolMOS™
Polarisation: unipolar
Drain current: 8.7A
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
кількість в упаковці: 1 шт
товар відсутній