Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (139469) > Сторінка 1224 з 2325
Фото | Назва | Виробник | Інформація |
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IPB60R190C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 600V Drain current: 20.2A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 151W Polarisation: unipolar Technology: CoolMOS™ C6 Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1000 шт |
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IPB60R199CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.199Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Technology: CoolMOS™ CP Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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IPB60R250CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2 Mounting: SMD Case: PG-TO263-3-2 Power dissipation: 104W Polarisation: unipolar Technology: CoolMOS™ CP Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 600V Drain current: 12A On-state resistance: 0.25Ω Type of transistor: N-MOSFET кількість в упаковці: 1000 шт |
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IPB60R280C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3 Technology: CoolMOS™ C6 Mounting: SMD Power dissipation: 104W Case: PG-TO263-3 Polarisation: unipolar Drain current: 13.8A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.28Ω кількість в упаковці: 1 шт |
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IPB60R280P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK Technology: CoolMOS™ P7 Mounting: SMD Power dissipation: 53W Case: D2PAK Kind of package: reel Polarisation: unipolar Drain current: 8A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.28Ω Gate charge: 18nC кількість в упаковці: 1 шт |
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IPB60R299CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Power dissipation: 96W Technology: CoolMOS™ CP Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET On-state resistance: 0.299Ω Gate-source voltage: ±20V Polarisation: unipolar кількість в упаковці: 1 шт |
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IPB60R360P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 41W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 13nC Kind of package: reel Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB60R385CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 83W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB64N25S320ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A Mounting: SMD Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS® -T Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 256A Case: PG-TO263-3-2 Drain-source voltage: 250V Drain current: 46A On-state resistance: 20mΩ Type of transistor: N-MOSFET кількість в упаковці: 1000 шт |
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IPB65R045C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 45mΩ Power dissipation: 227W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 46A кількість в упаковці: 1 шт |
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IPB65R065C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 171W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB65R099C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB65R110CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB65R125C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 101W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB65R150CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3 Mounting: SMD Case: PG-TO263-3 Drain-source voltage: 650V Drain current: 22.4A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 195.3W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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IPB65R190C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 72W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB65R190CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB65R225C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.225Ω Power dissipation: 63W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 11A кількість в упаковці: 1 шт |
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IPB65R280E6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 104W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB65R310CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3 Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 104.2W Polarisation: unipolar Case: PG-TO263-3 Mounting: SMD Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 1 шт |
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IPB65R380C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.6A Power dissipation: 83W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB65R420CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.42Ω Power dissipation: 310W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 650V Drain current: 8.7A Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IPB65R660CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 0.66Ω Power dissipation: 62.5W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 6A кількість в упаковці: 1000 шт |
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IPB80N04S2H4ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 103nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPB80N06S2L07ATMA3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Power dissipation: 210W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 986 шт: термін постачання 14-21 дні (днів) |
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IPB80N06S405ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 320A Power dissipation: 107W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1000 шт |
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IPB80N08S2L07ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 183nC Kind of channel: enhanced кількість в упаковці: 1000 шт |
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IPB80P04P4L04ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -80A; 125W; PG-TO263-3 Case: PG-TO263-3 Drain-source voltage: -40V Drain current: -80A On-state resistance: 4.4mΩ Type of transistor: P-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 135nC Technology: OptiMOS™ P2 Kind of channel: enhanced Gate-source voltage: ±16V Mounting: SMD кількість в упаковці: 1 шт |
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IPB90R340C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 9.5A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPC100N04S5-1R2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 150W Drain current: 100A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 131nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V кількість в упаковці: 5000 шт |
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IPC100N04S5-1R7 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 115W Drain current: 100A On-state resistance: 1.7mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 83nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V кількість в упаковці: 5000 шт |
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IPC100N04S5-1R9 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 100W Drain current: 100A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 65nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V кількість в упаковці: 1 шт |
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IPC100N04S5-2R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 75W Drain current: 100A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 45nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V кількість в упаковці: 1 шт |
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IPC100N04S5L-1R1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 150W Drain current: 100A On-state resistance: 1.1mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V кількість в упаковці: 1 шт |
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IPC100N04S5L-1R5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 115W Drain current: 100A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V кількість в упаковці: 1 шт |
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IPC100N04S5L-1R9 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 100W Drain current: 100A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 81nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V кількість в упаковці: 1 шт |
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IPC100N04S5L-2R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 75W Drain current: 100A On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 55nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V кількість в упаковці: 1 шт |
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IPC50N04S5-5R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPC50N04S5L-5R5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 42W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPC70N04S5-4R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 24.2nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPC70N04S5L-4R2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 70A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPC90N04S5-3R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8 Drain-source voltage: 40V Drain current: 90A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 63W Polarisation: unipolar Gate charge: 32.6nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Case: PG-TDSON-8 кількість в упаковці: 1 шт |
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IPC90N04S5L-3R3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8 Drain-source voltage: 40V Drain current: 90A On-state resistance: 3.3mΩ Type of transistor: N-MOSFET Mounting: SMD Power dissipation: 62W Polarisation: unipolar Gate charge: 40nC Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±16V Case: PG-TDSON-8 кількість в упаковці: 1 шт |
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IPD025N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 167W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1800 шт: термін постачання 14-21 дні (днів) |
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IPD031N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 94W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 3.1mΩ Drain current: 79A Drain-source voltage: 30V кількість в упаковці: 1 шт |
на замовлення 2134 шт: термін постачання 14-21 дні (днів) |
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IPD031N06L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 167W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 3.1mΩ Drain current: 100A Drain-source voltage: 60V кількість в упаковці: 1 шт |
на замовлення 1152 шт: термін постачання 14-21 дні (днів) |
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IPD034N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 167W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1224 шт: термін постачання 14-21 дні (днів) |
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IPD038N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Power dissipation: 188W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPD040N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 94W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2294 шт: термін постачання 14-21 дні (днів) |
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IPD042P03L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W Case: PG-TO252-3 Mounting: SMD Power dissipation: 150W Polarisation: unipolar Technology: OptiMOS™ P3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -280A Drain-source voltage: -30V Drain current: -70A On-state resistance: 6.8mΩ Type of transistor: P-MOSFET кількість в упаковці: 2500 шт |
товар відсутній |
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IPD050N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2342 шт: термін постачання 14-21 дні (днів) |
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IPD053N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3 Power dissipation: 83W Case: PG-TO252-3 Mounting: SMD Drain-source voltage: 60V Drain current: 45A On-state resistance: 5.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2500 шт |
товар відсутній |
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IPD060N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 56W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 88 шт: термін постачання 14-21 дні (днів) |
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IPD068P03L3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3 Polarisation: unipolar Technology: OptiMOS™ P3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO252-3 Drain-source voltage: -30V Drain current: -70A On-state resistance: 11mΩ Type of transistor: P-MOSFET Power dissipation: 100W кількість в упаковці: 1 шт |
товар відсутній |
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IPD075N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 47W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPD082N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3 Power dissipation: 125W Case: PG-TO252-3 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 80A On-state resistance: 8.2mΩ кількість в упаковці: 1 шт |
товар відсутній |
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IPD090N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2379 шт: термін постачання 14-21 дні (днів) |
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IPD110N12N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W Mounting: SMD Drain-source voltage: 120V Drain current: 54A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Case: PG-TO252-3 кількість в упаковці: 2500 шт |
товар відсутній |
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IPD12CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3 Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar On-state resistance: 12.4mΩ Drain-source voltage: 100V Drain current: 67A Case: PG-TO252-3 Power dissipation: 125W Mounting: SMD Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 2143 шт: термін постачання 14-21 дні (днів) |
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IPD135N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3 Case: PG-TO252-3 Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 31W Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 13.5mΩ Drain current: 21A Drain-source voltage: 30V кількість в упаковці: 1 шт |
на замовлення 879 шт: термін постачання 14-21 дні (днів) |
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IPB60R190C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 20.2A
On-state resistance: 0.19Ω
Type of transistor: N-MOSFET
Power dissipation: 151W
Polarisation: unipolar
Technology: CoolMOS™ C6
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1000 шт
товар відсутній
IPB60R199CPATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPB60R250CPATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2
Mounting: SMD
Case: PG-TO263-3-2
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 104W; PG-TO263-3-2
Mounting: SMD
Case: PG-TO263-3-2
Power dissipation: 104W
Polarisation: unipolar
Technology: CoolMOS™ CP
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1000 шт
товар відсутній
IPB60R280C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Technology: CoolMOS™ C6
Mounting: SMD
Power dissipation: 104W
Case: PG-TO263-3
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 104W; PG-TO263-3
Technology: CoolMOS™ C6
Mounting: SMD
Power dissipation: 104W
Case: PG-TO263-3
Polarisation: unipolar
Drain current: 13.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
кількість в упаковці: 1 шт
товар відсутній
IPB60R280P7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Technology: CoolMOS™ P7
Mounting: SMD
Power dissipation: 53W
Case: D2PAK
Kind of package: reel
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Gate charge: 18nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
Technology: CoolMOS™ P7
Mounting: SMD
Power dissipation: 53W
Case: D2PAK
Kind of package: reel
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Gate charge: 18nC
кількість в упаковці: 1 шт
товар відсутній
IPB60R299CPATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Power dissipation: 96W
Technology: CoolMOS™ CP
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.299Ω
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Power dissipation: 96W
Technology: CoolMOS™ CP
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
On-state resistance: 0.299Ω
Gate-source voltage: ±20V
Polarisation: unipolar
кількість в упаковці: 1 шт
товар відсутній
IPB60R360P7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB60R385CPATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB64N25S320ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 256A
Case: PG-TO263-3-2
Drain-source voltage: 250V
Drain current: 46A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS® -T
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 256A
Case: PG-TO263-3-2
Drain-source voltage: 250V
Drain current: 46A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1000 шт
товар відсутній
IPB65R045C7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 227W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 46A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 227W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 46A
кількість в упаковці: 1 шт
товар відсутній
IPB65R065C7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R099C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R110CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R125C7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R150CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3
Mounting: SMD
Case: PG-TO263-3
Drain-source voltage: 650V
Drain current: 22.4A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 195.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPB65R190C7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R190CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R225C7ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.225Ω
Power dissipation: 63W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 11A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.225Ω
Power dissipation: 63W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 11A
кількість в упаковці: 1 шт
товар відсутній
IPB65R280E6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R310CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 104.2W
Polarisation: unipolar
Case: PG-TO263-3
Mounting: SMD
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товар відсутній
IPB65R380C6ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB65R420CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 310W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.42Ω
Power dissipation: 310W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 8.7A
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
IPB65R660CFDATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 0.66Ω
Power dissipation: 62.5W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
кількість в упаковці: 1000 шт
товар відсутній
IPB80N04S2H4ATMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 103nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPB80N06S2L07ATMA3 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 986 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.26 грн |
9+ | 130.72 грн |
23+ | 118.69 грн |
1000+ | 114.19 грн |
IPB80N06S405ATMA2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 107W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
IPB80N08S2L07ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhanced
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhanced
кількість в упаковці: 1000 шт
товар відсутній
IPB80P04P4L04ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -80A; 125W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: -40V
Drain current: -80A
On-state resistance: 4.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 135nC
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -80A; 125W; PG-TO263-3
Case: PG-TO263-3
Drain-source voltage: -40V
Drain current: -80A
On-state resistance: 4.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 135nC
Technology: OptiMOS™ P2
Kind of channel: enhanced
Gate-source voltage: ±16V
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
IPB90R340C3ATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 9.5A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 9.5A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPC100N04S5-1R2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 150W
Drain current: 100A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 131nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 150W
Drain current: 100A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 131nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
кількість в упаковці: 5000 шт
товар відсутній
IPC100N04S5-1R7 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 83nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
кількість в упаковці: 5000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 83nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
кількість в упаковці: 5000 шт
товар відсутній
IPC100N04S5-1R9 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 100W
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 100W
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
IPC100N04S5-2R8 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 45nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
IPC100N04S5L-1R1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 150W
Drain current: 100A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 150W
Drain current: 100A
On-state resistance: 1.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
IPC100N04S5L-1R5 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 115W
Drain current: 100A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
IPC100N04S5L-1R9 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 100W
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 100W
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 81nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
IPC100N04S5L-2R6 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TDSON-8
Power dissipation: 75W
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 55nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
кількість в упаковці: 1 шт
товар відсутній
IPC50N04S5-5R8 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPC50N04S5L-5R5 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPC70N04S5-4R6 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPC70N04S5L-4R2 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPC90N04S5-3R6 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 32.6nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.6mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 63W
Polarisation: unipolar
Gate charge: 32.6nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: PG-TDSON-8
кількість в упаковці: 1 шт
товар відсутній
IPC90N04S5L-3R3 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 40nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TDSON-8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Drain-source voltage: 40V
Drain current: 90A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 62W
Polarisation: unipolar
Gate charge: 40nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: PG-TDSON-8
кількість в упаковці: 1 шт
товар відсутній
IPD025N06NATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1800 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 206.26 грн |
5+ | 163.41 грн |
8+ | 146.56 грн |
20+ | 138.47 грн |
50+ | 133.08 грн |
IPD031N03LGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 94W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.1mΩ
Drain current: 79A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 94W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.1mΩ
Drain current: 79A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
на замовлення 2134 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 87.15 грн |
5+ | 76.57 грн |
19+ | 55.73 грн |
52+ | 52.69 грн |
IPD031N06L3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 167W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.1mΩ
Drain current: 100A
Drain-source voltage: 60V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 167W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 3.1mΩ
Drain current: 100A
Drain-source voltage: 60V
кількість в упаковці: 1 шт
на замовлення 1152 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 225.62 грн |
5+ | 170.88 грн |
9+ | 118.69 грн |
25+ | 112.4 грн |
500+ | 111.5 грн |
1000+ | 107.9 грн |
IPD034N06N3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1224 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 144.28 грн |
10+ | 116.72 грн |
12+ | 89.02 грн |
33+ | 83.62 грн |
500+ | 80.92 грн |
IPD038N06N3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD040N03LGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2294 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 60.04 грн |
7+ | 44.26 грн |
25+ | 37.68 грн |
33+ | 32.73 грн |
89+ | 30.93 грн |
500+ | 30.39 грн |
IPD042P03L3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -280A
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 6.8mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; Idm: -280A; 150W
Case: PG-TO252-3
Mounting: SMD
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -280A
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 6.8mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
товар відсутній
IPD050N03LGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2342 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.62 грн |
6+ | 53.22 грн |
25+ | 45.23 грн |
27+ | 39.29 грн |
74+ | 37.23 грн |
500+ | 36.6 грн |
IPD053N06NATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Power dissipation: 83W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Power dissipation: 83W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 45A
On-state resistance: 5.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 2500 шт
товар відсутній
IPD060N03LGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 88 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78.44 грн |
5+ | 56.02 грн |
29+ | 37.32 грн |
78+ | 35.25 грн |
500+ | 34.35 грн |
IPD068P03L3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 100W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -70A; 100W; PG-TO252-3
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: -30V
Drain current: -70A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 100W
кількість в упаковці: 1 шт
товар відсутній
IPD075N03LGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
IPD082N10N3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Power dissipation: 125W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 8.2mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 125W; PG-TO252-3
Power dissipation: 125W
Case: PG-TO252-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 80A
On-state resistance: 8.2mΩ
кількість в упаковці: 1 шт
товар відсутній
IPD090N03LGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 42W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2379 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.94 грн |
35+ | 32.12 грн |
94+ | 29.22 грн |
500+ | 28.23 грн |
IPD110N12N3GATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 54A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Case: PG-TO252-3
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 54A; Idm: 300A; 136W
Mounting: SMD
Drain-source voltage: 120V
Drain current: 54A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Case: PG-TO252-3
кількість в упаковці: 2500 шт
товар відсутній
IPD12CN10NGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 12.4mΩ
Drain-source voltage: 100V
Drain current: 67A
Case: PG-TO252-3
Power dissipation: 125W
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 12.4mΩ
Drain-source voltage: 100V
Drain current: 67A
Case: PG-TO252-3
Power dissipation: 125W
Mounting: SMD
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 2143 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 128.79 грн |
10+ | 106.45 грн |
14+ | 80.03 грн |
37+ | 75.53 грн |
500+ | 73.73 грн |
IPD135N03LGATMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 31W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 13.5mΩ
Drain current: 21A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Case: PG-TO252-3
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 31W
Polarisation: unipolar
Type of transistor: N-MOSFET
On-state resistance: 13.5mΩ
Drain current: 21A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
на замовлення 879 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 82.31 грн |
8+ | 38.66 грн |
25+ | 32.82 грн |
37+ | 28.41 грн |
102+ | 26.89 грн |
500+ | 26.53 грн |