Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5727) > Сторінка 68 з 96
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3R30MT12J | GeneSiC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 68A Pulsed drain current: 200A Power dissipation: 459W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 30mΩ Mounting: SMD Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
G3R30MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W Drain-source voltage: 1.2kV Drain current: 63A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 400W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 155nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 200A Case: TO247-4 кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
G3R350MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 74W Polarisation: unipolar Gate charge: 12nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 16A Mounting: THT Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 8A On-state resistance: 0.35Ω кількість в упаковці: 1 шт |
на замовлення 449 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
G3R350MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 16A Power dissipation: 75W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
на замовлення 960 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
G3R40MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 50A Pulsed drain current: 140A Power dissipation: 333W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 40mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 117 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
G3R40MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 40mΩ Mounting: SMD Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
G3R40MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W Drain-source voltage: 1.2kV Drain current: 50A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 333W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 106nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 140A Case: TO247-4 кількість в упаковці: 1 шт |
на замовлення 303 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
G3R450MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 6A Pulsed drain current: 16A Power dissipation: 88W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 0.45Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 550 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
| G3R450MT17J | GeneSiC SEMICONDUCTOR |
G3R450MT17J SMD N channel transistors |
на замовлення 844 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||
 |
G3R45MT17D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 43A Pulsed drain current: 160A Power dissipation: 438W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 45mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
G3R45MT17K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 43A Pulsed drain current: 160A Power dissipation: 438W Case: TO247-4 Gate-source voltage: -5...15V On-state resistance: 45mΩ Mounting: THT Gate charge: 182nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
на замовлення 354 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
G3R75MT12D | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 29A Pulsed drain current: 80A Power dissipation: 207W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 281 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
G3R75MT12J | GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 30A Pulsed drain current: 80A Power dissipation: 224W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 54nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
G3R75MT12K | GeneSiC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W Drain-source voltage: 1.2kV Drain current: 29A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 207W Polarisation: unipolar Kind of package: tube Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 54nC Technology: G3R™; SiC Kind of channel: enhanced Gate-source voltage: -5...15V Pulsed drain current: 80A Case: TO247-4 кількість в упаковці: 1 шт |
на замовлення 529 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
GAP3SLT33-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214 Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 3.3kV Load current: 0.3A Semiconductor structure: single diode Case: DO214 Max. forward voltage: 1.15V Max. forward impulse current: 1A Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GB01SLT06-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 1A Semiconductor structure: single diode Case: DO214 Max. forward voltage: 1.5V Max. forward impulse current: 7A Kind of package: reel; tape кількість в упаковці: 15000 шт |
товар відсутній |
|||||||||||
 |
GB01SLT12-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Case: DO214 Max. forward voltage: 1.5V Max. forward impulse current: 8A Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GB01SLT12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 8A кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GB02SLT12-214 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: DO214 Max. forward voltage: 1.5V Max. forward impulse current: 16A Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GB02SLT12-252 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO252-2 Kind of package: reel; tape Max. forward impulse current: 16A кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GB05MPS33-263 | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube Case: TO263-7 Mounting: SMD Kind of package: tube Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 3.3kV Load current: 5A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 40A Max. forward voltage: 2.4V кількість в упаковці: 1000 шт |
товар відсутній |
|||||||||||
 |
GB10MPS17-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.7kV Features of semiconductor devices: MPS Type of diode: Schottky rectifying Max. forward voltage: 1.5V Load current: 10A Max. forward impulse current: 87A кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GB20SLT12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO247-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 160A кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GB2X100MPS12-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
| GB2X50MPS12-227 | GeneSiC SEMICONDUCTOR |
GB2X50MPS12-227 Diode modules |
товар відсутній |
||||||||||||
| GB2X50MPS17-227 | GeneSiC SEMICONDUCTOR |
GB2X50MPS17-227 Diode modules |
товар відсутній |
||||||||||||
 |
GB50SLT12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Max. forward voltage: 1.5V Case: TO247-2 Kind of package: tube Max. forward impulse current: 0.4kA кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GC02MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 16A кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
| GC05MPS12-252 | GeneSiC SEMICONDUCTOR |
GC05MPS12-252 SMD Schottky diodes |
товар відсутній |
||||||||||||
 |
GC08MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 60A кількість в упаковці: 1000 шт |
товар відсутній |
|||||||||||
| GC08MPS12-252 | GeneSiC SEMICONDUCTOR |
GC08MPS12-252 SMD Schottky diodes |
товар відсутній |
||||||||||||
 |
GC10MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 80A кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
| GC10MPS12-252 | GeneSiC SEMICONDUCTOR |
GC10MPS12-252 SMD Schottky diodes |
товар відсутній |
||||||||||||
 |
GC15MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 120A кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
| GC15MPS12-247 | GeneSiC SEMICONDUCTOR |
GC15MPS12-247 THT Schottky diodes |
на замовлення 49 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||
 |
GC20MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO220-2 Max. off-state voltage: 1.2kV Max. forward voltage: 1.5V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 160A кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
| GC20MPS12-247 | GeneSiC SEMICONDUCTOR |
GC20MPS12-247 THT Schottky diodes |
товар відсутній |
||||||||||||
 |
GC2X100MPS06-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.5V Max. forward impulse current: 640A Electrical mounting: screw Max. load current: 200A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||
 |
GC2X10MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 20A Max. forward voltage: 1.5V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 80A кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
GC2X15MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube Mounting: THT Kind of package: tube Technology: SiC Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 30A Max. forward voltage: 1.5V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 120A Type of diode: Schottky rectifying Features of semiconductor devices: MPS кількість в упаковці: 1 шт |
на замовлення 21 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
GC2X20MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Mounting: THT Kind of package: tube Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 40A Max. forward voltage: 1.5V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 160A Type of diode: Schottky rectifying кількість в упаковці: 600 шт |
товар відсутній |
|||||||||||
| GC2X50MPS06-227 | GeneSiC SEMICONDUCTOR |
GC2X50MPS06-227 Diode modules |
товар відсутній |
||||||||||||
 |
GC2X5MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube Kind of package: tube Features of semiconductor devices: MPS Technology: SiC Max. forward impulse current: 40A Semiconductor structure: common cathode; double Load current: 5A x2 Max. forward voltage: 1.5V Max. load current: 10A Max. off-state voltage: 1.2kV Case: TO247-3 Type of diode: Schottky rectifying Mounting: THT кількість в упаковці: 1 шт |
на замовлення 28 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
GC2X8MPS12-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 16A Max. forward voltage: 1.5V Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 60A кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
| GD02MPS12E | GeneSiC SEMICONDUCTOR |
GD02MPS12E SMD Schottky diodes |
товар відсутній |
||||||||||||
| GD05MPS17H | GeneSiC SEMICONDUCTOR |
GD05MPS17H THT Schottky diodes |
на замовлення 137 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||
| GD05MPS17J | GeneSiC SEMICONDUCTOR | GD05MPS17J SMD Schottky diodes |
товар відсутній |
||||||||||||
 |
GD10MPS12A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube Max. off-state voltage: 1.2kV Max. load current: 33A Load current: 16A Case: TO220-2 Mounting: THT Kind of package: tube Max. forward impulse current: 64A Semiconductor structure: single diode Features of semiconductor devices: MPS Type of diode: Schottky rectifying Max. forward voltage: 1.9V Technology: SiC кількість в упаковці: 1 шт |
на замовлення 47 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
| GD10MPS12E | GeneSiC SEMICONDUCTOR |
GD10MPS12E SMD Schottky diodes |
товар відсутній |
||||||||||||
| GD10MPS12H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube Case: TO247-2 Mounting: THT Max. forward impulse current: 64A Semiconductor structure: single diode Load current: 16A Max. forward voltage: 1.9V Max. load current: 33A Max. off-state voltage: 1.2kV Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC кількість в упаковці: 600 шт |
товар відсутній |
||||||||||||
| GD10MPS17H | GeneSiC SEMICONDUCTOR |
GD10MPS17H THT Schottky diodes |
на замовлення 2 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||
| GD15MPS17H | GeneSiC SEMICONDUCTOR |
GD15MPS17H THT Schottky diodes |
на замовлення 519 шт: термін постачання 14-21 дні (днів) |
|
|||||||||||
|
|
GD20MPS12A | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Technology: SiC Case: TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: MPS Max. load current: 67A Max. forward voltage: 1.9V Load current: 29A Max. forward impulse current: 128A Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 1250 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
GD20MPS12H | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube Technology: SiC Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: MPS Max. load current: 67A Max. forward voltage: 1.9V Load current: 27A Max. forward impulse current: 128A Type of diode: Schottky rectifying кількість в упаковці: 1 шт |
на замовлення 600 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
 |
GD2X100MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 108A x2 Case: SOT227B Max. forward voltage: 1.8V Max. forward impulse current: 440A Electrical mounting: screw Max. load current: 231A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns кількість в упаковці: 1 шт |
на замовлення 84 шт: термін постачання 14-21 дні (днів) |
|
||||||||||
| GD2X100MPS12N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A Type of module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 100A x2 Case: SOT227B Max. forward voltage: 1.9V Max. forward impulse current: 800A Electrical mounting: screw Max. load current: 420A Mechanical mounting: screw Features of semiconductor devices: MPS Kind of package: tube Technology: SiC Reverse recovery time: 10ns кількість в упаковці: 150 шт |
товар відсутній |
||||||||||||
| GD2X150MPS06N | GeneSiC SEMICONDUCTOR |
GD2X150MPS06N Diode modules |
товар відсутній |
||||||||||||
| GD2X20MPS12D | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube Mounting: THT Kind of package: tube Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 67A Max. forward voltage: 1.9V Load current: 27A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 128A Type of diode: Schottky rectifying кількість в упаковці: 600 шт |
товар відсутній |
||||||||||||
| GD2X30MPS06D | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube Mounting: THT Max. off-state voltage: 650V Max. load current: 88A Max. forward voltage: 1.8V Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 168A Kind of package: tube Type of diode: Schottky rectifying Features of semiconductor devices: MPS Technology: SiC Case: TO247-3 кількість в упаковці: 600 шт |
товар відсутній |
||||||||||||
 |
GD2X30MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw Type of module: diode Max. off-state voltage: 650V Max. load current: 60A Max. forward voltage: 1.5V Load current: 30A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 168A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Case: SOT227B кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 14-21 дні (днів) |
|
| G3R30MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 68A; Idm: 200A; 459W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 68A
Pulsed drain current: 200A
Power dissipation: 459W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
| G3R30MT12K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 63A; Idm: 200A; 400W
Drain-source voltage: 1.2kV
Drain current: 63A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 400W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 155nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 200A
Case: TO247-4
кількість в упаковці: 1 шт
товар відсутній
| G3R350MT12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 12nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 16A
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 8A
On-state resistance: 0.35Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 74W
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 74W
Polarisation: unipolar
Gate charge: 12nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 16A
Mounting: THT
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 8A
On-state resistance: 0.35Ω
кількість в упаковці: 1 шт
на замовлення 449 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 373.78 грн |
| 4+ | 347.36 грн |
| 9+ | 316.51 грн |
| 10+ | 303.92 грн |
| G3R350MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 16A; 75W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Pulsed drain current: 16A
Power dissipation: 75W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
на замовлення 960 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 466.74 грн |
| 3+ | 385.64 грн |
| 8+ | 351.57 грн |
| G3R40MT12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 50A
Pulsed drain current: 140A
Power dissipation: 333W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 117 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1329.52 грн |
| 3+ | 1212.01 грн |
| 10+ | 1137.45 грн |
| 30+ | 1122.16 грн |
| G3R40MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 53A
Pulsed drain current: 140A
Power dissipation: 374W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
| G3R40MT12K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 140A; 333W
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 106nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 140A
Case: TO247-4
кількість в упаковці: 1 шт
на замовлення 303 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1444.75 грн |
| 3+ | 1317.52 грн |
| 120+ | 1225.56 грн |
| 600+ | 1219.27 грн |
| G3R450MT17D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 6A; Idm: 16A; 88W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 6A
Pulsed drain current: 16A
Power dissipation: 88W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 550 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 600.37 грн |
| 3+ | 470.61 грн |
| 7+ | 428.9 грн |
| 120+ | 420.81 грн |
| G3R450MT17J |
|
Виробник: GeneSiC SEMICONDUCTOR
G3R450MT17J SMD N channel transistors
G3R450MT17J SMD N channel transistors
на замовлення 844 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 793.06 грн |
| 2+ | 629.42 грн |
| 5+ | 595.25 грн |
| G3R45MT17D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2855.62 грн |
| 2+ | 2603.3 грн |
| G3R45MT17K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 43A; Idm: 160A; 438W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 43A
Pulsed drain current: 160A
Power dissipation: 438W
Case: TO247-4
Gate-source voltage: -5...15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 182nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
на замовлення 354 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2671.63 грн |
| 2+ | 2436.15 грн |
| 30+ | 2255.11 грн |
| G3R75MT12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 80A
Power dissipation: 207W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 281 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1056.45 грн |
| 2+ | 827.3 грн |
| 4+ | 753.5 грн |
| 30+ | 724.73 грн |
| G3R75MT12J |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 80A; 224W
Type of transistor: N-MOSFET
Technology: G3R™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 30A
Pulsed drain current: 80A
Power dissipation: 224W
Case: TO263-7
Gate-source voltage: -5...15V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
кількість в упаковці: 1 шт
товар відсутній
| G3R75MT12K |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 80A; 207W
Drain-source voltage: 1.2kV
Drain current: 29A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 207W
Polarisation: unipolar
Kind of package: tube
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 54nC
Technology: G3R™; SiC
Kind of channel: enhanced
Gate-source voltage: -5...15V
Pulsed drain current: 80A
Case: TO247-4
кількість в упаковці: 1 шт
на замовлення 529 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1137.79 грн |
| 2+ | 820.77 грн |
| 3+ | 789.47 грн |
| 4+ | 747.21 грн |
| 120+ | 718.43 грн |
| GAP3SLT33-214 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 3.3kV
Load current: 0.3A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.15V
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 300mA; DO214
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 3.3kV
Load current: 0.3A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.15V
Max. forward impulse current: 1A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| GB01SLT06-214 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 7A
Kind of package: reel; tape
кількість в упаковці: 15000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 1A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 7A
Kind of package: reel; tape
кількість в упаковці: 15000 шт
товар відсутній
| GB01SLT12-214 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 8A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 8A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| GB01SLT12-252 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 8A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 1A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 8A
кількість в упаковці: 1 шт
товар відсутній
| GB02SLT12-214 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; DO214; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: DO214
Max. forward voltage: 1.5V
Max. forward impulse current: 16A
Kind of package: reel; tape
кількість в упаковці: 1 шт
товар відсутній
| GB02SLT12-252 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 16A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 2A; TO252-2; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO252-2
Kind of package: reel; tape
Max. forward impulse current: 16A
кількість в упаковці: 1 шт
товар відсутній
| GB05MPS33-263 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 3.3kV
Load current: 5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 2.4V
кількість в упаковці: 1000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 3.3kV; 5A; TO263-7; tube
Case: TO263-7
Mounting: SMD
Kind of package: tube
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 3.3kV
Load current: 5A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Max. forward voltage: 2.4V
кількість в упаковці: 1000 шт
товар відсутній
| GB10MPS17-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.7kV
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
кількість в упаковці: 1 шт
товар відсутній
| GB20SLT12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
товар відсутній
| GB2X100MPS12-227 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 200A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
кількість в упаковці: 1 шт
товар відсутній
| GB50SLT12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Case: TO247-2
Kind of package: tube
Max. forward impulse current: 0.4kA
кількість в упаковці: 1 шт
товар відсутній
| GC02MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 16A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 16A
кількість в упаковці: 1 шт
на замовлення 18 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.24 грн |
| 5+ | 205.42 грн |
| 7+ | 151.96 грн |
| 20+ | 143.87 грн |
| GC08MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
кількість в упаковці: 1000 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 60A
кількість в упаковці: 1000 шт
товар відсутній
| GC10MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 80A
кількість в упаковці: 1 шт
товар відсутній
| GC15MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 120A
кількість в упаковці: 1 шт
товар відсутній
| GC15MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
GC15MPS12-247 THT Schottky diodes
GC15MPS12-247 THT Schottky diodes
на замовлення 49 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1222.04 грн |
| 2+ | 783.17 грн |
| 4+ | 740.91 грн |
| GC20MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO220-2
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.5V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 160A
кількість в упаковці: 1 шт
товар відсутній
| GC2X100MPS06-227 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 640A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 100Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.5V
Max. forward impulse current: 640A
Electrical mounting: screw
Max. load current: 200A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
кількість в упаковці: 1 шт
товар відсутній
| GC2X10MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 20A
Max. forward voltage: 1.5V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 20A
Max. forward voltage: 1.5V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 80A
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 977.05 грн |
| 2+ | 655.49 грн |
| 5+ | 597.05 грн |
| GC2X15MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 30A
Max. forward voltage: 1.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 30A
Max. forward voltage: 1.5V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 120A
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
кількість в упаковці: 1 шт
на замовлення 21 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1166.84 грн |
| 2+ | 796.49 грн |
| 4+ | 725.63 грн |
| GC2X20MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.5V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Type of diode: Schottky rectifying
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 40A
Max. forward voltage: 1.5V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Type of diode: Schottky rectifying
кількість в упаковці: 600 шт
товар відсутній
| GC2X5MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Max. forward impulse current: 40A
Semiconductor structure: common cathode; double
Load current: 5A x2
Max. forward voltage: 1.5V
Max. load current: 10A
Max. off-state voltage: 1.2kV
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; tube
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Max. forward impulse current: 40A
Semiconductor structure: common cathode; double
Load current: 5A x2
Max. forward voltage: 1.5V
Max. load current: 10A
Max. off-state voltage: 1.2kV
Case: TO247-3
Type of diode: Schottky rectifying
Mounting: THT
кількість в упаковці: 1 шт
на замовлення 28 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 570.35 грн |
| 3+ | 395.91 грн |
| 8+ | 360.57 грн |
| GC2X8MPS12-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 16A
Max. forward voltage: 1.5V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8Ax2; TO247-3; tube
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 16A
Max. forward voltage: 1.5V
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 60A
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 777.57 грн |
| 3+ | 518.23 грн |
| 6+ | 472.06 грн |
| GD05MPS17H |
|
Виробник: GeneSiC SEMICONDUCTOR
GD05MPS17H THT Schottky diodes
GD05MPS17H THT Schottky diodes
на замовлення 137 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 538.39 грн |
| 3+ | 382.15 грн |
| 8+ | 361.46 грн |
| GD10MPS12A |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO220-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Technology: SiC
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO220-2; tube
Max. off-state voltage: 1.2kV
Max. load current: 33A
Load current: 16A
Case: TO220-2
Mounting: THT
Kind of package: tube
Max. forward impulse current: 64A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Max. forward voltage: 1.9V
Technology: SiC
кількість в упаковці: 1 шт
на замовлення 47 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 385.4 грн |
| 4+ | 264.25 грн |
| 11+ | 240.08 грн |
| GD10MPS12H |
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Case: TO247-2
Mounting: THT
Max. forward impulse current: 64A
Semiconductor structure: single diode
Load current: 16A
Max. forward voltage: 1.9V
Max. load current: 33A
Max. off-state voltage: 1.2kV
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 16A; TO247-2; tube
Case: TO247-2
Mounting: THT
Max. forward impulse current: 64A
Semiconductor structure: single diode
Load current: 16A
Max. forward voltage: 1.9V
Max. load current: 33A
Max. off-state voltage: 1.2kV
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
кількість в упаковці: 600 шт
товар відсутній
| GD10MPS17H |
|
Виробник: GeneSiC SEMICONDUCTOR
GD10MPS17H THT Schottky diodes
GD10MPS17H THT Schottky diodes
на замовлення 2 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1293.69 грн |
| 2+ | 802.96 грн |
| 4+ | 759.8 грн |
| GD15MPS17H |
|
Виробник: GeneSiC SEMICONDUCTOR
GD15MPS17H THT Schottky diodes
GD15MPS17H THT Schottky diodes
на замовлення 519 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1302.41 грн |
| 2+ | 878.49 грн |
| 4+ | 830.83 грн |
| GD20MPS12A |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Technology: SiC
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: MPS
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 29A
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube
Technology: SiC
Case: TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: MPS
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 29A
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 1250 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 504.5 грн |
| 3+ | 408.98 грн |
| 8+ | 372.26 грн |
| 250+ | 367.76 грн |
| 500+ | 357.87 грн |
| GD20MPS12H |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: MPS
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27A; TO247-2; tube
Technology: SiC
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Features of semiconductor devices: MPS
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
на замовлення 600 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 578.1 грн |
| 3+ | 491.15 грн |
| 7+ | 446.89 грн |
| 120+ | 429.8 грн |
| GD2X100MPS06N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 440A
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Max. forward impulse current: 440A
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
кількість в упаковці: 1 шт
на замовлення 84 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4048.6 грн |
| 3+ | 3844.25 грн |
| 10+ | 3645.22 грн |
| 25+ | 3615.55 грн |
| GD2X100MPS12N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.9V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 420A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
кількість в упаковці: 150 шт
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 100Ax2; SOT227B; 420A
Type of module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 100A x2
Case: SOT227B
Max. forward voltage: 1.9V
Max. forward impulse current: 800A
Electrical mounting: screw
Max. load current: 420A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Kind of package: tube
Technology: SiC
Reverse recovery time: 10ns
кількість в упаковці: 150 шт
товар відсутній
| GD2X20MPS12D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 27Ax2; TO247-3; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 67A
Max. forward voltage: 1.9V
Load current: 27A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 128A
Type of diode: Schottky rectifying
кількість в упаковці: 600 шт
товар відсутній
| GD2X30MPS06D |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 88A
Max. forward voltage: 1.8V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 168A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
кількість в упаковці: 600 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30Ax2; TO247-3; tube
Mounting: THT
Max. off-state voltage: 650V
Max. load current: 88A
Max. forward voltage: 1.8V
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 168A
Kind of package: tube
Type of diode: Schottky rectifying
Features of semiconductor devices: MPS
Technology: SiC
Case: TO247-3
кількість в упаковці: 600 шт
товар відсутній
| GD2X30MPS06N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 168A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 30Ax2; SOT227B; screw
Type of module: diode
Max. off-state voltage: 650V
Max. load current: 60A
Max. forward voltage: 1.5V
Load current: 30A x2
Semiconductor structure: double independent
Reverse recovery time: 10ns
Max. forward impulse current: 168A
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Case: SOT227B
кількість в упаковці: 1 шт
на замовлення 9 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1963.78 грн |
| 2+ | 1790 грн |