Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5727) > Сторінка 32 з 96
Фото | Назва | Виробник | Інформація |
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GB10MPS17-247 | GeneSiC Semiconductor | Description: SIC DIODE 1700V 10A TO-247-2 |
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GC50MPS06-247 | GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 50A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 50A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V |
на замовлення 740 шт: термін постачання 21-31 дні (днів) |
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GC2X50MPS06-227 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 650V 104A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 104A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
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GC2X100MPS06-227 | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 650V 209A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 209A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
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GE06MPS06E | GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 17A TO252-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 279pF @ 1V, 1MHz Current - Average Rectified (Io): 17A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V |
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GE08MPS06E | GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 21A TO252-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 373pF @ 1V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V |
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GE10MPS06E | GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 26A TO252-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 466pF @ 1V, 1MHz Current - Average Rectified (Io): 26A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V |
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GE06MPS06A | GeneSiC Semiconductor | Description: 650V 6A TO-220-2 SIC SCHOTTKY MP |
на замовлення 3294 шт: термін постачання 21-31 дні (днів) |
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GE08MPS06A | GeneSiC Semiconductor | Description: 650V 8A TO-220-2 SIC SCHOTTKY MP |
на замовлення 863 шт: термін постачання 21-31 дні (днів) |
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GE10MPS06A | GeneSiC Semiconductor | Description: 650V 10A TO-220-2 SIC SCHOTTKY M |
на замовлення 870 шт: термін постачання 21-31 дні (днів) |
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GE2X8MPS06D | GeneSiC Semiconductor |
Description: 650V 16A TO-247-3 SIC SCHOTTKY M Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 19A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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GE2X10MPS06D | GeneSiC Semiconductor |
Description: 650V 20A TO-247-3 SIC SCHOTTKY M Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 23A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 650 V |
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GD30MPS06H | GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 49A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 735pF @ 1V, 1MHz Current - Average Rectified (Io): 49A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V |
на замовлення 484 шт: термін постачання 21-31 дні (днів) |
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GD30MPS06J | GeneSiC Semiconductor |
Description: DIODE SIL CARB 650V 51A TO263-7 Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 735pF @ 1V, 1MHz Current - Average Rectified (Io): 51A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V |
на замовлення 733 шт: термін постачання 21-31 дні (днів) |
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GD2X30MPS06N | GeneSiC Semiconductor |
Description: 650V 60A SOT-227 SIC SCHOTTKY MP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 42A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V |
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GB05MPS17-247 | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.7KV 25A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 334pF @ 1V, 1MHz Current - Average Rectified (Io): 25A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 6 µA @ 1700 V |
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G3R350MT12D | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 11A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V |
на замовлення 8378 шт: термін постачання 21-31 дні (днів) |
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G3R160MT12D | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 22A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V |
на замовлення 3097 шт: термін постачання 21-31 дні (днів) |
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G3R75MT12D | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 41A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 207W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 7.5mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V |
на замовлення 2756 шт: термін постачання 21-31 дні (днів) |
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G3R40MT12D | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 71A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 10mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V |
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G2R1000MT33J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 4A TO263-7 Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V |
на замовлення 1441 шт: термін постачання 21-31 дні (днів) |
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G2R120MT33J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH TO263-7 Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V |
на замовлення 146 шт: термін постачання 21-31 дні (днів) |
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G3R350MT12J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 11A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V |
на замовлення 3623 шт: термін постачання 21-31 дні (днів) |
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KBPC1502T | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 15A KBPC Packaging: Bulk Package / Case: 4-Square, KBPC-T Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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KBPC1502W | GeneSiC Semiconductor |
Description: BRIDGE RECT 1P 200V 15A KBPC-W Packaging: Bulk Package / Case: 4-Square, KBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBPC-W Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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G2R1000MT17J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 3A TO263-7 Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V |
на замовлення 13914 шт: термін постачання 21-31 дні (днів) |
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G3R20MT17K | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 124A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V Power Dissipation (Max): 809W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 15mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V |
на замовлення 1050 шт: термін постачання 21-31 дні (днів) |
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GA01PNS150-201 | GeneSiC Semiconductor |
Description: SIC DIODE 15000V 1A DO-201 Packaging: Bulk Package / Case: DO-201AD, Axial Diode Type: PIN - Single Operating Temperature: -55°C ~ 175°C (TJ) Capacitance @ Vr, F: 22pF @ 1V, 1MHz Voltage - Peak Reverse (Max): 15000V Supplier Device Package: DO-201 Current - Max: 1 A |
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G3R20MT12K | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 128A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V Power Dissipation (Max): 542W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 15mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V |
на замовлення 978 шт: термін постачання 21-31 дні (днів) |
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G3R75MT12K | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 41A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 207W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 7.5mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V |
на замовлення 291 шт: термін постачання 21-31 дні (днів) |
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GC05MPS12-252 | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 27A TO252-2 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 359pF @ 1V, 1MHz Current - Average Rectified (Io): 27A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 4 µA @ 1200 V |
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GC05MPS12-252 | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 27A TO252-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 359pF @ 1V, 1MHz Current - Average Rectified (Io): 27A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 4 µA @ 1200 V |
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GC08MPS12-252 | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 40A TO252-2 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 545pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 7 µA @ 1200 V |
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GC08MPS12-252 | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 40A TO252-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 545pF @ 1V, 1MHz Current - Average Rectified (Io): 40A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 7 µA @ 1200 V |
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G3R40MT12K | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 71A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 10mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V |
на замовлення 2766 шт: термін постачання 21-31 дні (днів) |
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G3R30MT12K | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 90A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 12mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V |
на замовлення 1433 шт: термін постачання 21-31 дні (днів) |
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GB50MPS17-247 | GeneSiC Semiconductor | Description: SIC DIODE 1700V 50A TO-247-2 |
на замовлення 380 шт: термін постачання 21-31 дні (днів) |
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GB25MPS17-247 | GeneSiC Semiconductor | Description: SIC DIODE 1700V 25A TO-247-2 |
товар відсутній |
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GB05MPS17-263 | GeneSiC Semiconductor | Description: 1700V 5A TO-263-7 SIC SCHOTTKY M |
на замовлення 1843 шт: термін постачання 21-31 дні (днів) |
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GD2X75MPS17N | GeneSiC Semiconductor |
Description: DIODE MOD SIC 1700V 115A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 115A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V |
на замовлення 82 шт: термін постачання 21-31 дні (днів) |
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GD05MPS17H | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.7KV 15A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
на замовлення 2551 шт: термін постачання 21-31 дні (днів) |
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GD10MPS17H | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.7KV 26A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 721pF @ 1V, 1MHz Current - Average Rectified (Io): 26A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
на замовлення 726 шт: термін постачання 21-31 дні (днів) |
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GD15MPS17H | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.7KV 36A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1082pF @ 1V, 1MHz Current - Average Rectified (Io): 36A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
на замовлення 1350 шт: термін постачання 21-31 дні (днів) |
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GD25MPS17H | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.7KV 56A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1083pF @ 1V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
на замовлення 1440 шт: термін постачання 21-31 дні (днів) |
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G2R1000MT17D | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 4A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 500µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V |
на замовлення 7891 шт: термін постачання 21-31 дні (днів) |
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GD02MPS12E | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 8A TO252-2 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 73pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
товар відсутній |
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GD02MPS12E | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 8A TO252-2 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 73pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
на замовлення 1434 шт: термін постачання 21-31 дні (днів) |
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GD10MPS12A | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 25A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 367pF @ 1V, 1MHz Current - Average Rectified (Io): 25A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
на замовлення 1664 шт: термін постачання 21-31 дні (днів) |
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G3R160MT12J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 19A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 10A, 15V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 5mA (Typ) Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V |
на замовлення 1059 шт: термін постачання 21-31 дні (днів) |
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G3R30MT12J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 96A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V Power Dissipation (Max): 459W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 12mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V |
товар відсутній |
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G3R450MT17J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 9A TO263-7 Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V |
на замовлення 7662 шт: термін постачання 21-31 дні (днів) |
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G3R450MT17D | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 9A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V |
на замовлення 2562 шт: термін постачання 21-31 дні (днів) |
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G3R40MT12J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 75A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V Power Dissipation (Max): 374W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 18mA (Typ) Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V |
на замовлення 1432 шт: термін постачання 21-31 дні (днів) |
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G3R45MT17K | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 61A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V Power Dissipation (Max): 438W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 8mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V |
на замовлення 935 шт: термін постачання 21-31 дні (днів) |
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G3R45MT17D | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 61A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V Power Dissipation (Max): 438W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 8mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V |
на замовлення 956 шт: термін постачання 21-31 дні (днів) |
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MBR8045 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 45V 80A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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G3R60MT07D | GeneSiC Semiconductor |
Description: 750V 60M TO-247-3 G3R SIC MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: SiCFET (Silicon Carbide) Supplier Device Package: TO-247-3 Part Status: Active Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 750 V |
на замовлення 2868 шт: термін постачання 21-31 дні (днів) |
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G3R75MT12J | GeneSiC Semiconductor |
Description: SIC MOSFET N-CH 42A TO263-7 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 224W (Tc) Vgs(th) (Max) @ Id: 2.69V @ 7.5mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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G2R50MT33K | GeneSiC Semiconductor |
Description: 3300V 50M TO-247-4 SIC MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 536W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ) Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V |
на замовлення 249 шт: термін постачання 21-31 дні (днів) |
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GD50MPS12H | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1.2KV 92A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1835pF @ 1V, 1MHz Current - Average Rectified (Io): 92A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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GB10MPS17-247 |
Виробник: GeneSiC Semiconductor
Description: SIC DIODE 1700V 10A TO-247-2
Description: SIC DIODE 1700V 10A TO-247-2
товар відсутній
GC50MPS06-247 |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIL CARB 650V 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
на замовлення 740 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1038.8 грн |
10+ | 906.73 грн |
25+ | 876.12 грн |
GC2X50MPS06-227 |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 104A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 104A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Description: DIODE MOD SCHOT 650V 104A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 104A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
товар відсутній
GC2X100MPS06-227 |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 209A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 209A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: DIODE MOD SCHOT 650V 209A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 209A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
товар відсутній
GE06MPS06E |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 17A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIL CARB 650V 17A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
GE08MPS06E |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 21A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIL CARB 650V 21A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 373pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
GE10MPS06E |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 26A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIL CARB 650V 26A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 466pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
GE06MPS06A |
Виробник: GeneSiC Semiconductor
Description: 650V 6A TO-220-2 SIC SCHOTTKY MP
Description: 650V 6A TO-220-2 SIC SCHOTTKY MP
на замовлення 3294 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 183.64 грн |
10+ | 154.13 грн |
25+ | 145.93 грн |
100+ | 126.03 грн |
250+ | 119.33 грн |
500+ | 118.54 грн |
GE08MPS06A |
Виробник: GeneSiC Semiconductor
Description: 650V 8A TO-220-2 SIC SCHOTTKY MP
Description: 650V 8A TO-220-2 SIC SCHOTTKY MP
на замовлення 863 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 217.88 грн |
GE10MPS06A |
Виробник: GeneSiC Semiconductor
Description: 650V 10A TO-220-2 SIC SCHOTTKY M
Description: 650V 10A TO-220-2 SIC SCHOTTKY M
на замовлення 870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 256.78 грн |
10+ | 217.9 грн |
25+ | 207.11 грн |
100+ | 180.03 грн |
250+ | 171.08 грн |
500+ | 164.64 грн |
GE2X8MPS06D |
Виробник: GeneSiC Semiconductor
Description: 650V 16A TO-247-3 SIC SCHOTTKY M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 19A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Description: 650V 16A TO-247-3 SIC SCHOTTKY M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 19A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 403.85 грн |
10+ | 346.03 грн |
25+ | 330.29 грн |
GE2X10MPS06D |
Виробник: GeneSiC Semiconductor
Description: 650V 20A TO-247-3 SIC SCHOTTKY M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Description: 650V 20A TO-247-3 SIC SCHOTTKY M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 23A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
GD30MPS06H |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 49A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIL CARB 650V 49A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
на замовлення 484 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 459.87 грн |
10+ | 395.41 грн |
25+ | 378.1 грн |
100+ | 334.79 грн |
GD30MPS06J |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 51A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Description: DIODE SIL CARB 650V 51A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Current - Average Rectified (Io): 51A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
на замовлення 733 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 499.56 грн |
10+ | 430.85 грн |
25+ | 412.42 грн |
100+ | 367.28 грн |
GD2X30MPS06N |
Виробник: GeneSiC Semiconductor
Description: 650V 60A SOT-227 SIC SCHOTTKY MP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 42A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Description: 650V 60A SOT-227 SIC SCHOTTKY MP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 42A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
товар відсутній
GB05MPS17-247 |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.7KV 25A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 25A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
товар відсутній
G3R350MT12D |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Description: SIC MOSFET N-CH 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
на замовлення 8378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 331.48 грн |
10+ | 283.31 грн |
25+ | 269.87 грн |
100+ | 235.59 грн |
250+ | 224.85 грн |
500+ | 217.27 грн |
1000+ | 205.64 грн |
2500+ | 196.32 грн |
G3R160MT12D |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
Description: SIC MOSFET N-CH 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
на замовлення 3097 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 455.98 грн |
10+ | 393.69 грн |
25+ | 376.9 грн |
100+ | 330.97 грн |
250+ | 317.07 грн |
500+ | 306.33 грн |
1000+ | 291.99 грн |
G3R75MT12D |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 41A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Description: SIC MOSFET N-CH 41A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
на замовлення 2756 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 733.77 грн |
10+ | 636.68 грн |
25+ | 610.44 грн |
100+ | 538.14 грн |
250+ | 516.02 грн |
500+ | 500.24 грн |
1000+ | 476.51 грн |
G3R40MT12D |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Description: SIC MOSFET N-CH 71A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
товар відсутній
G2R1000MT33J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
Description: SIC MOSFET N-CH 4A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
на замовлення 1441 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1454.32 грн |
10+ | 1266.03 грн |
25+ | 1216.06 грн |
100+ | 1073.78 грн |
250+ | 1031.38 грн |
500+ | 1000.43 грн |
G2R120MT33J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
Description: SIC MOSFET N-CH TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 156mOhm @ 20A, 20V
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3706 pF @ 1000 V
на замовлення 146 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 7956.33 грн |
G3R350MT12J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Description: SIC MOSFET N-CH 11A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
на замовлення 3623 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 396.07 грн |
KBPC1502T |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 15A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 15A KBPC
Packaging: Bulk
Package / Case: 4-Square, KBPC-T
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
KBPC1502W |
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1P 200V 15A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
G2R1000MT17J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 3A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
Description: SIC MOSFET N-CH 3A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
на замовлення 13914 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 461.43 грн |
10+ | 397.96 грн |
25+ | 380.95 грн |
100+ | 334.64 грн |
250+ | 320.32 грн |
500+ | 309.9 грн |
1000+ | 294.88 грн |
G3R20MT17K |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
Description: SIC MOSFET N-CH 124A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 809W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 7492.57 грн |
10+ | 6692.65 грн |
25+ | 6495.37 грн |
100+ | 5825.97 грн |
GA01PNS150-201 |
Виробник: GeneSiC Semiconductor
Description: SIC DIODE 15000V 1A DO-201
Packaging: Bulk
Package / Case: DO-201AD, Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Supplier Device Package: DO-201
Current - Max: 1 A
Description: SIC DIODE 15000V 1A DO-201
Packaging: Bulk
Package / Case: DO-201AD, Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 22pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 15000V
Supplier Device Package: DO-201
Current - Max: 1 A
товар відсутній
G3R20MT12K |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
Description: SIC MOSFET N-CH 128A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 542W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
на замовлення 978 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2522.68 грн |
10+ | 2233.08 грн |
25+ | 2160.43 грн |
100+ | 1927.05 грн |
250+ | 1863.88 грн |
G3R75MT12K |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 41A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Description: SIC MOSFET N-CH 41A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 207W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 752.45 грн |
10+ | 653.54 грн |
25+ | 626.6 грн |
100+ | 552.66 грн |
250+ | 529.92 грн |
GC05MPS12-252 |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 27A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 27A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
товар відсутній
GC05MPS12-252 |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 27A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 27A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 27A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
товар відсутній
GC08MPS12-252 |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 40A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 40A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
товар відсутній
GC08MPS12-252 |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 40A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 40A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
товар відсутній
G3R40MT12K |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 71A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Description: SIC MOSFET N-CH 71A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 10mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
на замовлення 2766 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1234.88 грн |
10+ | 1086.27 грн |
25+ | 1047.89 грн |
100+ | 930.99 грн |
250+ | 898.15 грн |
500+ | 874.15 грн |
G3R30MT12K |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
Description: SIC MOSFET N-CH 90A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
на замовлення 1433 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1574.92 грн |
10+ | 1393.18 грн |
25+ | 1347.4 грн |
100+ | 1201.33 грн |
250+ | 1161.53 грн |
500+ | 1132.48 грн |
GB50MPS17-247 |
Виробник: GeneSiC Semiconductor
Description: SIC DIODE 1700V 50A TO-247-2
Description: SIC DIODE 1700V 50A TO-247-2
на замовлення 380 шт:
термін постачання 21-31 дні (днів)GB25MPS17-247 |
Виробник: GeneSiC Semiconductor
Description: SIC DIODE 1700V 25A TO-247-2
Description: SIC DIODE 1700V 25A TO-247-2
товар відсутній
GB05MPS17-263 |
Виробник: GeneSiC Semiconductor
Description: 1700V 5A TO-263-7 SIC SCHOTTKY M
Description: 1700V 5A TO-263-7 SIC SCHOTTKY M
на замовлення 1843 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 634.95 грн |
10+ | 545.57 грн |
25+ | 521.52 грн |
100+ | 476.77 грн |
GD2X75MPS17N |
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 1700V 115A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 115A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Description: DIODE MOD SIC 1700V 115A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 115A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
на замовлення 82 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 8067.6 грн |
10+ | 7209.74 грн |
25+ | 6998.54 грн |
GD05MPS17H |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.7KV 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 2551 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 436.53 грн |
10+ | 374.35 грн |
25+ | 357.51 грн |
100+ | 312.91 грн |
250+ | 298.75 грн |
500+ | 296.29 грн |
GD10MPS17H |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.7KV 26A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 26A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 1V, 1MHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 726 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 586.71 грн |
10+ | 505.11 грн |
25+ | 482.94 грн |
100+ | 423.37 грн |
250+ | 405.18 грн |
500+ | 391.55 грн |
GD15MPS17H |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.7KV 36A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1082pF @ 1V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 36A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1082pF @ 1V, 1MHz
Current - Average Rectified (Io): 36A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 1350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 799.91 грн |
10+ | 694.68 грн |
25+ | 667 грн |
100+ | 588.29 грн |
250+ | 564.27 грн |
500+ | 547.39 грн |
1000+ | 521.81 грн |
GD25MPS17H |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.7KV 56A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1083pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Description: DIODE SIL CARB 1.7KV 56A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1083pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 1440 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1326.7 грн |
10+ | 1153.11 грн |
25+ | 1107.17 грн |
100+ | 977 грн |
250+ | 938.06 грн |
500+ | 909.65 грн |
G2R1000MT17D |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V
Description: SIC MOSFET N-CH 4A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 1000 V
на замовлення 7891 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 380.5 грн |
10+ | 327.75 грн |
25+ | 312.97 грн |
100+ | 274.75 грн |
250+ | 262.75 грн |
500+ | 253.91 грн |
1000+ | 241.05 грн |
2500+ | 230.49 грн |
GD02MPS12E |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
товар відсутній
GD02MPS12E |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 73pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 1434 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 103.49 грн |
10+ | 86.84 грн |
25+ | 82.03 грн |
100+ | 70.52 грн |
250+ | 65.99 грн |
500+ | 63.4 грн |
1000+ | 59.82 грн |
GD10MPS12A |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 25A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 25A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 1664 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 271.57 грн |
10+ | 230.86 грн |
25+ | 219.4 грн |
100+ | 190.75 грн |
250+ | 181.9 грн |
500+ | 174.96 грн |
1000+ | 165.88 грн |
G3R160MT12J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 19A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 10A, 15V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
Description: SIC MOSFET N-CH 19A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 10A, 15V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 800 V
на замовлення 1059 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 521.34 грн |
G3R30MT12J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 96A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 459W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
Description: SIC MOSFET N-CH 96A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 15V
Power Dissipation (Max): 459W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 12mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3901 pF @ 800 V
товар відсутній
G3R450MT17J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 9A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
Description: SIC MOSFET N-CH 9A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
на замовлення 7662 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 625.61 грн |
10+ | 543.32 грн |
25+ | 521.46 грн |
100+ | 459.75 грн |
250+ | 441.25 грн |
500+ | 427.69 грн |
1000+ | 411.11 грн |
G3R450MT17D |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
Description: SIC MOSFET N-CH 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 1000 V
на замовлення 2562 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 504.22 грн |
10+ | 436.1 грн |
25+ | 417.96 грн |
100+ | 368.23 грн |
250+ | 353.07 грн |
500+ | 341.7 грн |
1000+ | 325.54 грн |
G3R40MT12J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 75A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 374W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Description: SIC MOSFET N-CH 75A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 374W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1291.69 грн |
G3R45MT17K |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 61A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Power Dissipation (Max): 438W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
Description: SIC MOSFET N-CH 61A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Power Dissipation (Max): 438W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
на замовлення 935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2311.03 грн |
10+ | 2042.61 грн |
25+ | 1974 грн |
100+ | 1759.03 грн |
250+ | 1699.67 грн |
G3R45MT17D |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 61A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Power Dissipation (Max): 438W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
Description: SIC MOSFET N-CH 61A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
Power Dissipation (Max): 438W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
на замовлення 956 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2287.69 грн |
10+ | 2020.43 грн |
25+ | 1952.45 грн |
100+ | 1739.46 грн |
250+ | 1680.72 грн |
MBR8045 |
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE SCHOTTKY 45V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 159 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1803.69 грн |
10+ | 1463.84 грн |
25+ | 1367.42 грн |
100+ | 1157.5 грн |
G3R60MT07D |
Виробник: GeneSiC Semiconductor
Description: 750V 60M TO-247-3 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
Description: 750V 60M TO-247-3 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
на замовлення 2868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 728.32 грн |
10+ | 636.54 грн |
25+ | 612.33 грн |
100+ | 542.2 грн |
250+ | 521.41 грн |
500+ | 506.48 грн |
1000+ | 484.13 грн |
G3R75MT12J |
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 42A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
Description: SIC MOSFET N-CH 42A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 7.5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 800 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 792.13 грн |
G2R50MT33K |
Виробник: GeneSiC Semiconductor
Description: 3300V 50M TO-247-4 SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
Description: 3300V 50M TO-247-4 SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 536W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA (Typ)
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7301 pF @ 1000 V
на замовлення 249 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 20664.67 грн |
10+ | 18682.66 грн |
25+ | 18219.63 грн |
GD50MPS12H |
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 92A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1835pF @ 1V, 1MHz
Current - Average Rectified (Io): 92A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 92A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1835pF @ 1V, 1MHz
Current - Average Rectified (Io): 92A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1132.95 грн |
10+ | 993.35 грн |
25+ | 956.71 грн |
100+ | 848.49 грн |
250+ | 817.98 грн |