Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4368) > Сторінка 47 з 73
Фото | Назва | Виробник | Інформація |
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AOSD21311C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R |
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AOSD26313C | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Gate charge: 33nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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AOSD26313C | Alpha & Omega Semiconductor | 30V Complementary MOSFET |
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AOSD26313C | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Gate charge: 33nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AOSD32334C | Alpha & Omega Semiconductor | 30V Dual N-Channel MOSFET |
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AOSD62666E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
на замовлення 466 шт: термін постачання 21-30 дні (днів) |
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AOSD62666E | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R |
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AOSD62666E | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R |
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AOSD62666E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
на замовлення 466 шт: термін постачання 14-21 дні (днів) |
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AOSN21319C | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AOSP21307 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -11A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W |
на замовлення 1108 шт: термін постачання 21-30 дні (днів) |
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AOSP21307 | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AOSP21307 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -11A On-state resistance: 11.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W кількість в упаковці: 1 шт |
на замовлення 1108 шт: термін постачання 14-21 дні (днів) |
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AOSP21307 | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AOSP21311C | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AOSP21313C | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
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AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R |
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AOSP21321 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8 Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W |
на замовлення 3021 шт: термін постачання 21-30 дні (днів) |
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AOSP21321 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8 Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 2W кількість в упаковці: 1 шт |
на замовлення 3021 шт: термін постачання 14-21 дні (днів) |
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AOSP21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8 Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -12.5A On-state resistance: 8.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W |
на замовлення 693 шт: термін постачання 21-30 дні (днів) |
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AOSP21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8 Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: SO8 Drain-source voltage: -30V Drain current: -12.5A On-state resistance: 8.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W кількість в упаковці: 1 шт |
на замовлення 693 шт: термін постачання 14-21 дні (днів) |
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AOSP21357 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R |
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AOSP21357 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R |
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AOSP32314 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced |
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AOSP32314 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R |
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AOSP32314 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R |
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AOSP32314 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
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AOSP32320C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhanced Power dissipation: 2.5W Polarisation: unipolar Gate charge: 20nC Drain current: 8.5A Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ |
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AOSP32320C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
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AOSP32320C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhanced Power dissipation: 2.5W Polarisation: unipolar Gate charge: 20nC Drain current: 8.5A Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ кількість в упаковці: 1 шт |
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AOSP32368 | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
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AOSP32368 | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
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AOSP32368 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain current: 12A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 2W Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30V |
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AOSP32368 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8 Mounting: SMD Polarisation: unipolar Drain current: 12A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 2W Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30V кількість в упаковці: 1 шт |
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AOSP36326C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8 Drain-source voltage: 30V Drain current: 12A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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AOSP36326C | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOSP36326C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8 Drain-source voltage: 30V Drain current: 12A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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AOSP66406 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOSP66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8 Drain-source voltage: 40V Drain current: 13A On-state resistance: 6.6mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 8.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
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AOSP66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8 Drain-source voltage: 40V Drain current: 13A On-state resistance: 6.6mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 8.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
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AOSP66920 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R |
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AOSP66920 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8 Drain-source voltage: 100V Drain current: 13.5A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 50nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
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AOSP66920 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8 Drain-source voltage: 100V Drain current: 13.5A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 50nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
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AOSP66923 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET |
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AOSP66923 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET |
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AOSP66923 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8 Mounting: SMD Drain-source voltage: 100V Drain current: 12A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 35nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 |
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AOSP66923 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8 Mounting: SMD Drain-source voltage: 100V Drain current: 12A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 35nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 кількість в упаковці: 1 шт |
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AOSP66925 | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) |
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AOSS21115C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±8V |
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AOSS21115C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 20V Drain current: 4.5A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 5 шт |
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AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R |
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AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R |
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AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R |
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AOSS21311C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -30V Drain current: -3.3A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |
AOSD21311C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R
товар відсутній
AOSD26313C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
AOSD26313C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
AOSD62666E |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
на замовлення 466 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
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8+ | 53.26 грн |
14+ | 26.98 грн |
25+ | 23.53 грн |
43+ | 20.68 грн |
117+ | 19.56 грн |
AOSD62666E |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
товар відсутній
AOSD62666E |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R
товар відсутній
AOSD62666E |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7.5A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
на замовлення 466 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.91 грн |
9+ | 33.62 грн |
25+ | 28.23 грн |
43+ | 24.82 грн |
117+ | 23.47 грн |
AOSP21307 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
на замовлення 1108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.26 грн |
17+ | 22.48 грн |
19+ | 19.93 грн |
51+ | 17.38 грн |
140+ | 16.41 грн |
AOSP21307 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -11A
On-state resistance: 11.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
кількість в упаковці: 1 шт
на замовлення 1108 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.91 грн |
10+ | 28.01 грн |
12+ | 23.92 грн |
51+ | 20.86 грн |
140+ | 19.69 грн |
AOSP21321 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
товар відсутній
AOSP21321 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.91 грн |
AOSP21321 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 12 грн |
6000+ | 11.39 грн |
9000+ | 11.04 грн |
AOSP21321 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 10.54 грн |
AOSP21321 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.35 грн |
AOSP21321 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 12.32 грн |
6000+ | 11.58 грн |
9000+ | 10.66 грн |
AOSP21321 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R
товар відсутній
AOSP21321 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
на замовлення 3021 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 18.32 грн |
29+ | 13.04 грн |
88+ | 10.04 грн |
241+ | 9.52 грн |
AOSP21321 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -8.5A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
кількість в упаковці: 1 шт
на замовлення 3021 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 21.98 грн |
25+ | 16.25 грн |
88+ | 12.05 грн |
241+ | 11.42 грн |
AOSP21357 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
на замовлення 693 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 53.26 грн |
18+ | 20.98 грн |
21+ | 18.43 грн |
55+ | 16.04 грн |
151+ | 15.14 грн |
AOSP21357 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.5A
On-state resistance: 8.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
кількість в упаковці: 1 шт
на замовлення 693 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.91 грн |
11+ | 26.14 грн |
13+ | 22.12 грн |
55+ | 19.24 грн |
151+ | 18.16 грн |
AOSP21357 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
товар відсутній
AOSP21357 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R
товар відсутній
AOSP32314 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
товар відсутній
AOSP32314 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
товар відсутній
AOSP32314 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R
товар відсутній
AOSP32314 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
AOSP32320C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
товар відсутній
AOSP32320C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhanced
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 20nC
Drain current: 8.5A
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 22mΩ
кількість в упаковці: 1 шт
товар відсутній
AOSP32368 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 12A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 12A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
товар відсутній
AOSP32368 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 12A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2W; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 12A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
кількість в упаковці: 1 шт
товар відсутній
AOSP36326C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 30.66 грн |
AOSP36326C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.27 грн |
25+ | 15.41 грн |
93+ | 11.42 грн |
254+ | 10.79 грн |
AOSP66406 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
товар відсутній
AOSP66406 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
AOSP66920 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
товар відсутній
AOSP66920 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
товар відсутній
AOSP66920 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
AOSP66923 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
товар відсутній
AOSP66923 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
AOSS21115C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±8V
товар відсутній
AOSS21115C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 4.5A
On-state resistance: 40mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 5 шт
товар відсутній
AOSS21115C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
товар відсутній
AOSS21115C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
товар відсутній
AOSS21115C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
товар відсутній
AOSS21311C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -3.3A
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній