Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4361) > Сторінка 17 з 73
Фото | Назва | Виробник | Інформація |
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AOC2401 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 3A 4-Pin Alpha DFN |
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AOC2412 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 4.5A 4-Pin Alpha DFN |
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AOC2413 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 8V 3.5A 4-Pin Alpha DFN |
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AOC2415 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN |
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AOC2417 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN |
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AOC2421 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 8V 2.5A 4-Pin Alpha DFN T/R |
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AOC2421 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4 Mounting: SMD Case: DFN4 Polarisation: unipolar Gate charge: 7.5nC Kind of channel: enhanced Gate-source voltage: ±5V Power dissipation: 0.6W Drain-source voltage: -8V Drain current: -2.5A On-state resistance: 62mΩ Type of transistor: P-MOSFET |
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AOC2421 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4 Mounting: SMD Case: DFN4 Polarisation: unipolar Gate charge: 7.5nC Kind of channel: enhanced Gate-source voltage: ±5V Power dissipation: 0.6W Drain-source voltage: -8V Drain current: -2.5A On-state resistance: 62mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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AOC2422 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 8V 3.5A 4-Pin Alpha DFN |
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AOC2422 | Alpha & Omega Semiconductor |
на замовлення 3000 шт: термін постачання 14-28 дні (днів) |
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AOC2423 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 2A 4-Pin Alpha DFN |
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AOC2802 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 6A 4-Pin WLCSP |
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AOC2804 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Power dissipation: 0.7W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced |
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AOC2804 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Power dissipation: 0.7W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOC2804B | Alpha & Omega Semiconductor | Trans MOSFET N-CH 20V 6A T/R |
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AOC2804B | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.3W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 34mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
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AOC2804B | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Power dissipation: 1.3W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 34mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AOC2806 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Power dissipation: 0.7W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 12.5nC Kind of channel: enhanced |
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AOC2806 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Power dissipation: 0.7W Case: DFN4 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 12.5nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOC2874 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOC3860A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.5W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
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AOC3860A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.5W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AOC3862 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Mounting: SMD Power dissipation: 2.5W Gate charge: 46nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Semiconductor structure: common drain Case: DFN6 On-state resistance: 3mΩ |
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AOC3862 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Mounting: SMD Power dissipation: 2.5W Gate charge: 46nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Semiconductor structure: common drain Case: DFN6 On-state resistance: 3mΩ кількість в упаковці: 1 шт |
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AOC3868 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN6 |
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AOC3868 | Alpha & Omega Semiconductor | 12V Common-Drain Dual N-Channel MOSFET |
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AOC3868 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN6 кількість в упаковці: 1 шт |
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AOC3870A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.3W Case: DFN10 Gate-source voltage: ±8V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
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AOC3870A | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.3W Case: DFN10 Gate-source voltage: ±8V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 32nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AOC3878 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOC3878 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain Drain-source voltage: 12V On-state resistance: 2mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN10 Semiconductor structure: common drain |
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AOC3878 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain Drain-source voltage: 12V On-state resistance: 2mΩ Type of transistor: N-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Case: DFN10 Semiconductor structure: common drain кількість в упаковці: 1 шт |
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AOCA24106E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain Case: DFN6 Mounting: SMD Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.7W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V |
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AOCA24106E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain Case: DFN6 Mounting: SMD Semiconductor structure: common drain Drain-source voltage: 12V On-state resistance: 5.6mΩ Type of transistor: N-MOSFET x2 Power dissipation: 2.7W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V кількість в упаковці: 1 шт |
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AOCA24108E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.2W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate |
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AOCA24108E | Alpha & Omega Semiconductor | Trans MOSFET N-CH Si 12V 14A 6-Pin Alpha DFN T/R |
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AOCA24108E | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Power dissipation: 2.2W Case: DFN6 Gate-source voltage: ±8V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced Semiconductor structure: common drain Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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AOCA32106E | Alpha & Omega Semiconductor | 12V Common-Drain Dual N-Channel MOSFET |
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AOCA32317 | Alpha & Omega Semiconductor | LV Common Drain Battery MOSFETS |
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AOCA36102E | Alpha & Omega Semiconductor | Trans MOSFET N-CH 22V 30A 10-Pin Alpha DFN T/R |
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AOCA36116C | Alpha & Omega Semiconductor | Common Drain Dual N Channel MOSFET |
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AOCA36116C | Alpha & Omega Semiconductor | Common Drain Dual N Channel MOSFET |
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AOD11S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK |
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AOD11S60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Pulsed drain current: 45A Power dissipation: 208W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.11Ω Gate charge: 11nC Kind of channel: enhanced |
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AOD11S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK |
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AOD11S60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.5A Pulsed drain current: 45A Power dissipation: 208W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.11Ω Gate charge: 11nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AOD1N60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.8A Power dissipation: 45W Case: TO252 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced |
на замовлення 1914 шт: термін постачання 21-30 дні (днів) |
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AOD1N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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AOD1N60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.8A Power dissipation: 45W Case: TO252 Gate-source voltage: ±30V On-state resistance: 9Ω Mounting: SMD Gate charge: 6.1nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1914 шт: термін постачання 14-21 дні (днів) |
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AOD1N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R |
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AOD1R4A70 | Alpha & Omega Semiconductor | N-Channel Power Transistor |
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AOD1R4A70 | ALPHA & OMEGA SEMICONDUCTOR | AOD1R4A70 SMD N channel transistors |
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AOD206 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK |
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AOD208 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 54A 3-Pin(2+Tab) DPAK T/R |
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AOD210 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R |
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AOD210 | Alpha & Omega Semiconductor |
на замовлення 1399 шт: термін постачання 14-28 дні (днів) |
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AOD21357 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R |
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AOD21357 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R |
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AOD2144 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 62W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhanced |
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AOD2144 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOC2401 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 3A 4-Pin Alpha DFN
Trans MOSFET P-CH 30V 3A 4-Pin Alpha DFN
товар відсутній
AOC2412 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 4.5A 4-Pin Alpha DFN
Trans MOSFET N-CH 20V 4.5A 4-Pin Alpha DFN
товар відсутній
AOC2413 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 8V 3.5A 4-Pin Alpha DFN
Trans MOSFET P-CH 8V 3.5A 4-Pin Alpha DFN
товар відсутній
AOC2415 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN
товар відсутній
AOC2417 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN
Trans MOSFET P-CH 20V 3.5A 4-Pin Alpha DFN
товар відсутній
AOC2421 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 8V 2.5A 4-Pin Alpha DFN T/R
Trans MOSFET P-CH 8V 2.5A 4-Pin Alpha DFN T/R
товар відсутній
AOC2421 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4
Mounting: SMD
Case: DFN4
Polarisation: unipolar
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Power dissipation: 0.6W
Drain-source voltage: -8V
Drain current: -2.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4
Mounting: SMD
Case: DFN4
Polarisation: unipolar
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Power dissipation: 0.6W
Drain-source voltage: -8V
Drain current: -2.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
товар відсутній
AOC2421 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4
Mounting: SMD
Case: DFN4
Polarisation: unipolar
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Power dissipation: 0.6W
Drain-source voltage: -8V
Drain current: -2.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -2.5A; 600mW; DFN4
Mounting: SMD
Case: DFN4
Polarisation: unipolar
Gate charge: 7.5nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Power dissipation: 0.6W
Drain-source voltage: -8V
Drain current: -2.5A
On-state resistance: 62mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
AOC2422 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 8V 3.5A 4-Pin Alpha DFN
Trans MOSFET N-CH 8V 3.5A 4-Pin Alpha DFN
товар відсутній
AOC2422 |
Виробник: Alpha & Omega Semiconductor
на замовлення 3000 шт:
термін постачання 14-28 дні (днів)AOC2423 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 2A 4-Pin Alpha DFN
Trans MOSFET P-CH 20V 2A 4-Pin Alpha DFN
товар відсутній
AOC2804 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
товар відсутній
AOC2804 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
AOC2804B |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
товар відсутній
AOC2804B |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.3W; DFN4; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Power dissipation: 1.3W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
AOC2806 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhanced
товар відсутній
AOC2806 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4.5A; 700mW; DFN4
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Power dissipation: 0.7W
Case: DFN4
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
AOC3860A |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
товар відсутній
AOC3860A |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.5W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
AOC3862 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
товар відсутній
AOC3862 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 46nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Semiconductor structure: common drain
Case: DFN6
On-state resistance: 3mΩ
кількість в упаковці: 1 шт
товар відсутній
AOC3868 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN6
товар відсутній
AOC3868 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN6
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.5W; DFN6; common drain
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN6
кількість в упаковці: 1 шт
товар відсутній
AOC3870A |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.3W
Case: DFN10
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.3W
Case: DFN10
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
товар відсутній
AOC3870A |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.3W
Case: DFN10
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.3W; DFN10; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.3W
Case: DFN10
Gate-source voltage: ±8V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
AOC3878 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
товар відсутній
AOC3878 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.1W; DFN10; common drain
Drain-source voltage: 12V
On-state resistance: 2mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: DFN10
Semiconductor structure: common drain
кількість в упаковці: 1 шт
товар відсутній
AOCA24106E |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Case: DFN6
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Case: DFN6
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
товар відсутній
AOCA24106E |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Case: DFN6
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.7W; DFN6; common drain
Case: DFN6
Mounting: SMD
Semiconductor structure: common drain
Drain-source voltage: 12V
On-state resistance: 5.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 18nC
Kind of channel: enhanced
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товар відсутній
AOCA24108E |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.2W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.2W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
товар відсутній
AOCA24108E |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH Si 12V 14A 6-Pin Alpha DFN T/R
Trans MOSFET N-CH Si 12V 14A 6-Pin Alpha DFN T/R
товар відсутній
AOCA24108E |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.2W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 12V; 2.2W; DFN6; common drain
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 12V
Power dissipation: 2.2W
Case: DFN6
Gate-source voltage: ±8V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhanced
Semiconductor structure: common drain
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
AOCA32106E |
Виробник: Alpha & Omega Semiconductor
12V Common-Drain Dual N-Channel MOSFET
12V Common-Drain Dual N-Channel MOSFET
товар відсутній
AOCA36102E |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 22V 30A 10-Pin Alpha DFN T/R
Trans MOSFET N-CH 22V 30A 10-Pin Alpha DFN T/R
товар відсутній
AOD11S60 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
товар відсутній
AOD11S60 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
товар відсутній
AOD11S60 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
товар відсутній
AOD11S60 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.5A; Idm: 45A; 208W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.5A
Pulsed drain current: 45A
Power dissipation: 208W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Gate charge: 11nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
AOD1N60 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.8A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.8A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
на замовлення 1914 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
14+ | 30.07 грн |
25+ | 19.77 грн |
54+ | 16.64 грн |
146+ | 15.74 грн |
500+ | 15.7 грн |
AOD1N60 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 12.31 грн |
AOD1N60 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.8A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.8A; 45W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.8A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1914 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.09 грн |
25+ | 24.64 грн |
54+ | 19.97 грн |
146+ | 18.88 грн |
500+ | 18.84 грн |
2500+ | 18.11 грн |
AOD1N60 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 1.3A 3-Pin(2+Tab) DPAK T/R
товар відсутній
AOD206 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK
Trans MOSFET N-CH 30V 46A 3-Pin(2+Tab) DPAK
товар відсутній
AOD208 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 54A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 54A 3-Pin(2+Tab) DPAK T/R
товар відсутній
AOD210 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
товар відсутній
AOD210 |
Виробник: Alpha & Omega Semiconductor
на замовлення 1399 шт:
термін постачання 14-28 дні (днів)AOD21357 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
товар відсутній
AOD21357 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) DPAK T/R
товар відсутній
AOD2144 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 62W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 62W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
товар відсутній