Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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5SLG 0600P450300 | ABB |
![]() Description: Module: diode; double independent; 4.5kV; If: 600Ax2; HIPAK; screw Max. off-state voltage: 4.5kV Max. load current: 1.2kA Max. forward voltage: 4V Load current: 600A x2 Semiconductor structure: double independent Max. forward impulse current: 4.5kA Electrical mounting: screw Mechanical mounting: screw Type of module: diode Case: HIPAK кількість в упаковці: 1 шт |
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5SMA 3000L450300 | ABB |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 3kA; STAKPAK Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 4.5kV Collector current: 3kA Case: STAKPAK Electrical mounting: Press-Pack Gate-emitter voltage: ±20V Pulsed collector current: 6kA кількість в упаковці: 1 шт |
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5SNA 0400J650100 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 6.5kV Collector current: 400A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 0500J650300 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 6.5kV Collector current: 500A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1kA Technology: SPT+ Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 0600G650100 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; HIPAK Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 6.5kV Collector current: 600A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 0650J450300 | ABB |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 4.5kV Collector current: 650A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.3kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 0800J450300 | ABB |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 4.5kV Collector current: 800A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 0800N330100 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 3.3kV Collector current: 800A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1000G650300 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 6.5kV Collector current: 1kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1000N330300 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 3.3kV Collector current: 1kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1200E330100 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 3.3kV Collector current: 1.2kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2.4kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1200G330100 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 3.3kV Collector current: 1.2kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2.4kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1200G450300 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 4.5kV Collector current: 1.2kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2.4kA Technology: SPT+ Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1200G450350 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 4.5kV Collector current: 1.2kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2.4kA Technology: SPT+ Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1300K450300 | ABB |
![]() Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 1.3kA; STAKPAK Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 4.5kV Collector current: 1.3kA Case: STAKPAK Electrical mounting: Press-Pack Gate-emitter voltage: ±20V Pulsed collector current: 2.6kA Technology: SPT+ кількість в упаковці: 1 шт |
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5SNA 1500K452300 | ABB |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 4.52kV; Ic: 1.5kA Max. off-state voltage: 4.52kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 1.5kA Pulsed collector current: 3kA Electrical mounting: Press-Pack Type of module: IGBT Case: STAKPAK кількість в упаковці: 1 шт |
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5SNA 1600N170100 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 1.7kV Collector current: 1.6kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 3.2kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1600N170300 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 1.7kV Collector current: 1.6kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 3.2kA Technology: SPT+ Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 1800E330400 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 3.3kV Collector current: 1.8kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 3.6kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 2000K450300 | ABB |
![]() Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 4.5kV Collector current: 2kA Case: STAKPAK Electrical mounting: Press-Pack Gate-emitter voltage: ±20V Pulsed collector current: 4kA Technology: SPT+ кількість в упаковці: 1 шт |
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5SNA 2000K451300 | ABB |
![]() Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 4.5kV Collector current: 2kA Case: STAKPAK Electrical mounting: Press-Pack Gate-emitter voltage: ±20V Pulsed collector current: 4kA Technology: SPT+ кількість в упаковці: 1 шт |
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5SNA 2000K452300 | ABB |
![]() Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK Max. off-state voltage: 4.5kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 2kA Pulsed collector current: 4kA Electrical mounting: Press-Pack Type of module: IGBT Technology: SPT+ Case: STAKPAK кількість в упаковці: 1 шт |
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5SNA 2400E170305 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 1.7kV Collector current: 2.4kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 4.8kA Technology: SPT+ Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 2400N170300 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x2 Max. off-state voltage: 1.7kV Collector current: 2.4kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 4.8kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNA 3000K452300 | ABB |
![]() Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 3kA; STAKPAK Max. off-state voltage: 4.5kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 3kA Pulsed collector current: 6kA Electrical mounting: Press-Pack Type of module: IGBT Technology: SPT+ Case: STAKPAK кількість в упаковці: 1 шт |
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5SNA 3600E170300 | ABB |
![]() Description: Module: IGBT; transistor/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; transistor/transistor Topology: IGBT half-bridge x3 Max. off-state voltage: 1.7kV Collector current: 3.6kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 7.2kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SND 0500N330300 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 3.3kV; HIPAK Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT x2 Max. off-state voltage: 3.3kV Collector current: 500A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1kA Technology: SPT+ Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SND 0800M170100 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 800A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNE 0800E330100 | ABB |
![]() Description: Module: IGBT; diode/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; diode/transistor Topology: boost chopper; buck chopper Max. off-state voltage: 3.3kV Collector current: 800A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNE 0800G450300 | ABB |
![]() Description: Module: IGBT; diode/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; diode/transistor Topology: boost chopper; buck chopper Max. off-state voltage: 4.5kV Collector current: 800A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNE 0800M170100 | ABB |
![]() Description: Module: IGBT; diode/transistor; boost chopper,buck chopper Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; buck chopper Max. off-state voltage: 1.7kV Collector current: 800A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.6kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNE 1000E330300 | ABB |
![]() Description: Module: IGBT; diode/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; diode/transistor Topology: boost chopper; buck chopper Max. off-state voltage: 3.3kV Collector current: 1kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNE 1600E170300 | ABB |
![]() Description: Module: IGBT; diode/transistor,common gate,common emitter; SPT+ Type of module: IGBT Semiconductor structure: common emitter; common gate; diode/transistor Topology: boost chopper; buck chopper Max. off-state voltage: 1.7kV Collector current: 1.6kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 3.2kA Technology: SPT+ Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNE 2400E170300 | ABB |
![]() Description: Module: IGBT; diode/transistor,common gate,common emitter Type of module: IGBT Semiconductor structure: common emitter; common gate; diode/transistor Topology: boost chopper; buck chopper Max. off-state voltage: 1.7kV Collector current: 2.4kA Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 4.8kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNG 0150P450300 | ABB |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: HIPAK Max. off-state voltage: 4.5kV Semiconductor structure: transistor/transistor кількість в упаковці: 1 шт |
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5SNG 0150Q170300 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 150A Case: 62PAK Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 300A Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNG 0200Q170300 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 200A Case: 62PAK Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNG 0250P330305 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 3.3kV Collector current: 250A Case: HIPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 500A Mechanical mounting: screw кількість в упаковці: 1 шт |
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5SNG 0300Q170300 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge Case: 62PAK кількість в упаковці: 1 шт |
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5SNG 0450X330300 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Max. off-state voltage: 3.3kV Semiconductor structure: transistor/transistor Case: LINPAK Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; NTC thermistor кількість в упаковці: 1 шт |
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5SNG 1000X170300 | ABB |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1kA Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 1kA Case: LINPAK Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2kA Mechanical mounting: screw кількість в упаковці: 1 шт |
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5STB 13N6500 | ABB |
![]() Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.205kA; 1.405kA; Igt: 400mA Case: Ø150/100mm Mounting: Press-Pack Max. off-state voltage: 6.5kV Features of semiconductor devices: bi-directional controlled thyristor (BCT) Gate current: 400mA Type of thyristor: hockey-puck Load current: 1.405kA Max. load current: 2.205kA Max. forward impulse current: 22kA кількість в упаковці: 1 шт |
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5STB 17N5200 | ABB |
![]() Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 2.83kA; 1.8kA; Igt: 400mA Type of thyristor: hockey-puck Mounting: Press-Pack Case: Ø150/100mm Max. off-state voltage: 5.2kV Max. load current: 2.83kA Load current: 1.8kA Gate current: 400mA Max. forward impulse current: 29kA Features of semiconductor devices: bi-directional controlled thyristor (BCT) кількість в упаковці: 1 шт |
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5STB 18N4200 | ABB |
![]() Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 3.02kA; 1.92kA; Igt: 400mA Type of thyristor: hockey-puck Max. off-state voltage: 4.2kV Max. load current: 3.02kA Load current: 1.92kA Gate current: 400mA Case: Ø150/100mm Mounting: Press-Pack Max. forward impulse current: 32kA Features of semiconductor devices: bi-directional controlled thyristor (BCT) кількість в упаковці: 1 шт |
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5STB 18U6500 | ABB |
![]() Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.48kA; 1.58kA; Igt: 400mA Type of thyristor: hockey-puck Max. off-state voltage: 6.5kV Max. load current: 2.48kA Load current: 1.58kA Gate current: 400mA Case: Ø172/110mm Mounting: Press-Pack Max. forward impulse current: 29.7kA Features of semiconductor devices: bi-directional controlled thyristor (BCT) кількість в упаковці: 1 шт |
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5STB 24N2800 | ABB |
![]() Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.82kA; 2.43kA; Igt: 400mA Mounting: Press-Pack Features of semiconductor devices: bi-directional controlled thyristor (BCT) Type of thyristor: hockey-puck Case: Ø150/100mm Max. off-state voltage: 2.8kV Max. load current: 3.82kA Load current: 2.43kA Gate current: 400mA Max. forward impulse current: 43kA кількість в упаковці: 1 шт |
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5STB 24Q2800 | ABB |
![]() Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 4.13kA; 2.63kA; Igt: 400mA Type of thyristor: hockey-puck Max. off-state voltage: 2.8kV Max. load current: 4.13kA Load current: 2.63kA Gate current: 400mA Case: Ø151/100mm Mounting: Press-Pack Max. forward impulse current: 43kA Features of semiconductor devices: bi-directional controlled thyristor (BCT) кількість в упаковці: 1 шт |
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5STB 25U5200 | ABB |
![]() Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 3.1kA; 1.98kA; Igt: 400mA Mounting: Press-Pack Max. off-state voltage: 5.2kV Features of semiconductor devices: bi-directional controlled thyristor (BCT) Case: Ø172/110mm Max. load current: 3.1kA Type of thyristor: hockey-puck Load current: 1.98kA Gate current: 400mA Max. forward impulse current: 42kA кількість в упаковці: 1 шт |
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5STF 23H2040 | ABB |
![]() Description: Thyristor: hockey-puck; 2kV; Ifmax: 3.648kA; 2.322kA; Igt: 500mA Type of thyristor: hockey-puck Max. off-state voltage: 2kV Max. load current: 3.648kA Load current: 2.322kA Gate current: 500mA Case: Ø101,5/63mm Mounting: Press-Pack Max. forward impulse current: 42kA Features of semiconductor devices: fast switching кількість в упаковці: 1 шт |
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5STF 28H2060 | ABB |
![]() Description: Thyristor: hockey-puck; 2kV; Ifmax: 4.189kA; 2.667kA; Igt: 500mA Case: Ø101,5/63mm Mounting: Press-Pack Max. off-state voltage: 2kV Features of semiconductor devices: fast switching Type of thyristor: hockey-puck Max. load current: 4.189kA Load current: 2.667kA Gate current: 500mA Max. forward impulse current: 46.5kA кількість в упаковці: 1 шт |
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5STP 03D6500 | ABB |
![]() Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 610A; 390A; Igt: 400mA Type of thyristor: hockey-puck Max. off-state voltage: 6.5kV Max. load current: 610A Load current: 390A Gate current: 400mA Case: Ø60/34mm Mounting: Press-Pack Max. forward impulse current: 4.7kA Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
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5STP 03X6500 | ABB |
![]() Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 540A; 340A; Igt: 400mA Type of thyristor: hockey-puck Max. off-state voltage: 6.5kV Max. load current: 540A Load current: 340A Gate current: 400mA Case: Ø60/34mm Mounting: Press-Pack Max. forward impulse current: 4.7kA Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
товар відсутній |
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5STP 04D4200 | ABB |
![]() Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 740A; 470A; Igt: 400mA Type of thyristor: hockey-puck Max. off-state voltage: 4.2kV Max. load current: 740A Load current: 470A Gate current: 400mA Case: Ø60/34mm Mounting: Press-Pack Max. forward impulse current: 7.1kA Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
товар відсутній |
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5STP 04D5200 | ABB |
![]() Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 650A; 420A; Igt: 400mA Type of thyristor: hockey-puck Max. off-state voltage: 5.2kV Max. load current: 650A Load current: 420A Gate current: 400mA Case: Ø60/34mm Mounting: Press-Pack Max. forward impulse current: 6.1kA Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
товар відсутній |
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5STP 06D2800 | ABB |
![]() Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 970A; 620A; Igt: 400mA Max. off-state voltage: 2.8kV Max. load current: 970A Load current: 620A Gate current: 400mA Max. forward impulse current: 8.8kA Case: Ø60/34mm Features of semiconductor devices: phase controlled thyristor (PCT) Mounting: Press-Pack Type of thyristor: hockey-puck кількість в упаковці: 1 шт |
на замовлення 4 шт: термін постачання 14-21 дні (днів) |
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5STP 07D1800 | ABB |
![]() Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.19kA; 760A; Igt: 400mA Mounting: Press-Pack Type of thyristor: hockey-puck Case: Ø60/34mm Max. off-state voltage: 1.8kV Max. load current: 1.19kA Load current: 760A Gate current: 400mA Max. forward impulse current: 9kA Features of semiconductor devices: phase controlled thyristor (PCT) кількість в упаковці: 1 шт |
товар відсутній |
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5STP 08F6500 | ABB |
![]() Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 1.34kA; 850A; Igt: 400mA Case: Ø75/47mm Mounting: Press-Pack Type of thyristor: hockey-puck Load current: 850A Gate current: 400mA Max. forward impulse current: 15.1kA Max. off-state voltage: 6.5kV Features of semiconductor devices: phase controlled thyristor (PCT) Max. load current: 1.34kA кількість в упаковці: 1 шт |
товар відсутній |
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5STP 08G6500 | ABB |
![]() Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 1.15kA; 730A; Igt: 400mA Case: Ø75/47mm Mounting: Press-Pack Type of thyristor: hockey-puck Load current: 730A Gate current: 400mA Max. forward impulse current: 15.1kA Max. off-state voltage: 6.5kV Features of semiconductor devices: phase controlled thyristor (PCT) Max. load current: 1.15kA кількість в упаковці: 1 шт |
товар відсутній |
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5STP 12F4200 | ABB |
![]() Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA Case: Ø75/47mm Mounting: Press-Pack Max. off-state voltage: 4.2kV Features of semiconductor devices: phase controlled thyristor (PCT) Gate current: 400mA Type of thyristor: hockey-puck Max. forward impulse current: 17.3kA Load current: 1.15kA Max. load current: 1.8kA кількість в упаковці: 1 шт |
товар відсутній |
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5STP 12K6500 | ABB |
![]() Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA Case: Ø102/63mm Mounting: Press-Pack Max. off-state voltage: 6.5kV Features of semiconductor devices: phase controlled thyristor (PCT) Gate current: 400mA Type of thyristor: hockey-puck Max. forward impulse current: 31.5kA Load current: 1.43kA Max. load current: 2.25kA кількість в упаковці: 1 шт |
товар відсутній |
5SLG 0600P450300 |
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Виробник: ABB
Category: Diode modules
Description: Module: diode; double independent; 4.5kV; If: 600Ax2; HIPAK; screw
Max. off-state voltage: 4.5kV
Max. load current: 1.2kA
Max. forward voltage: 4V
Load current: 600A x2
Semiconductor structure: double independent
Max. forward impulse current: 4.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: HIPAK
кількість в упаковці: 1 шт
Category: Diode modules
Description: Module: diode; double independent; 4.5kV; If: 600Ax2; HIPAK; screw
Max. off-state voltage: 4.5kV
Max. load current: 1.2kA
Max. forward voltage: 4V
Load current: 600A x2
Semiconductor structure: double independent
Max. forward impulse current: 4.5kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: HIPAK
кількість в упаковці: 1 шт
товар відсутній
5SMA 3000L450300 |
Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 3kA; STAKPAK
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 4.5kV
Collector current: 3kA
Case: STAKPAK
Electrical mounting: Press-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 6kA
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 3kA; STAKPAK
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 4.5kV
Collector current: 3kA
Case: STAKPAK
Electrical mounting: Press-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 6kA
кількість в упаковці: 1 шт
товар відсутній
5SNA 0400J650100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 6.5kV
Collector current: 400A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 6.5kV
Collector current: 400A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 0500J650300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 6.5kV
Collector current: 500A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 6.5kV
Collector current: 500A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 0600G650100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; HIPAK
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 6.5kV
Collector current: 600A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; HIPAK
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 6.5kV
Collector current: 600A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 0650J450300 |
Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 4.5kV
Collector current: 650A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 4.5kV
Collector current: 650A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 0800J450300 |
Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 4.5kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 4.5kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 0800N330100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 3.3kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 3.3kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1000G650300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 6.5kV
Collector current: 1kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 6.5kV
Collector current: 1kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1000N330300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 3.3kV
Collector current: 1kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 3.3kV
Collector current: 1kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1200E330100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 3.3kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 3.3kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1200G330100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 3.3kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 3.3kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1200G450300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 4.5kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 4.5kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1200G450350 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 4.5kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 4.5kV
Collector current: 1.2kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1300K450300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 1.3kA; STAKPAK
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 4.5kV
Collector current: 1.3kA
Case: STAKPAK
Electrical mounting: Press-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 2.6kA
Technology: SPT+
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 1.3kA; STAKPAK
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 4.5kV
Collector current: 1.3kA
Case: STAKPAK
Electrical mounting: Press-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 2.6kA
Technology: SPT+
кількість в упаковці: 1 шт
товар відсутній
5SNA 1500K452300 |
Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 4.52kV; Ic: 1.5kA
Max. off-state voltage: 4.52kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.5kA
Pulsed collector current: 3kA
Electrical mounting: Press-Pack
Type of module: IGBT
Case: STAKPAK
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 4.52kV; Ic: 1.5kA
Max. off-state voltage: 4.52kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.5kA
Pulsed collector current: 3kA
Electrical mounting: Press-Pack
Type of module: IGBT
Case: STAKPAK
кількість в упаковці: 1 шт
товар відсутній
5SNA 1600N170100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1600N170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 1800E330400 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 3.3kV
Collector current: 1.8kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 3.3kV
Collector current: 1.8kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 2000K450300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 4.5kV
Collector current: 2kA
Case: STAKPAK
Electrical mounting: Press-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 4kA
Technology: SPT+
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 4.5kV
Collector current: 2kA
Case: STAKPAK
Electrical mounting: Press-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 4kA
Technology: SPT+
кількість в упаковці: 1 шт
товар відсутній
5SNA 2000K451300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 4.5kV
Collector current: 2kA
Case: STAKPAK
Electrical mounting: Press-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 4kA
Technology: SPT+
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 4.5kV
Collector current: 2kA
Case: STAKPAK
Electrical mounting: Press-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 4kA
Technology: SPT+
кількість в упаковці: 1 шт
товар відсутній
5SNA 2000K452300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK
Max. off-state voltage: 4.5kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 2kA
Pulsed collector current: 4kA
Electrical mounting: Press-Pack
Type of module: IGBT
Technology: SPT+
Case: STAKPAK
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 2kA; STAKPAK
Max. off-state voltage: 4.5kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 2kA
Pulsed collector current: 4kA
Electrical mounting: Press-Pack
Type of module: IGBT
Technology: SPT+
Case: STAKPAK
кількість в упаковці: 1 шт
товар відсутній
5SNA 2400E170305 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 2400N170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x2
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNA 3000K452300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 3kA; STAKPAK
Max. off-state voltage: 4.5kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 3kA
Pulsed collector current: 6kA
Electrical mounting: Press-Pack
Type of module: IGBT
Technology: SPT+
Case: STAKPAK
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 4.5kV; Ic: 3kA; STAKPAK
Max. off-state voltage: 4.5kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±20V
Collector current: 3kA
Pulsed collector current: 6kA
Electrical mounting: Press-Pack
Type of module: IGBT
Technology: SPT+
Case: STAKPAK
кількість в упаковці: 1 шт
товар відсутній
5SNA 3600E170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.7kV
Collector current: 3.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; transistor/transistor
Topology: IGBT half-bridge x3
Max. off-state voltage: 1.7kV
Collector current: 3.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 7.2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SND 0500N330300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 3.3kV; HIPAK
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 3.3kV
Collector current: 500A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 3.3kV; HIPAK
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 3.3kV
Collector current: 500A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SND 0800M170100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1.7kV; HIPAK
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNE 0800E330100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 3.3kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 3.3kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNE 0800G450300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 4.5kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 4.5kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNE 0800M170100 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 1.7kV
Collector current: 800A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.6kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNE 1000E330300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 3.3kV
Collector current: 1kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 3.3kV
Collector current: 1kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNE 1600E170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter; SPT+
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter; SPT+
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: SPT+
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNE 2400E170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor,common gate,common emitter
Type of module: IGBT
Semiconductor structure: common emitter; common gate; diode/transistor
Topology: boost chopper; buck chopper
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNG 0150P450300 |
Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: HIPAK
Max. off-state voltage: 4.5kV
Semiconductor structure: transistor/transistor
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: HIPAK
Max. off-state voltage: 4.5kV
Semiconductor structure: transistor/transistor
кількість в упаковці: 1 шт
товар відсутній
5SNG 0150Q170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 150A
Case: 62PAK
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 150A
Case: 62PAK
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNG 0200Q170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 200A
Case: 62PAK
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 200A
Case: 62PAK
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNG 0250P330305 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 3.3kV
Collector current: 250A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 3.3kV
Collector current: 250A
Case: HIPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5SNG 0300Q170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: 62PAK
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Case: 62PAK
кількість в упаковці: 1 шт
товар відсутній
5SNG 0450X330300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Case: LINPAK
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 3.3kV
Semiconductor structure: transistor/transistor
Case: LINPAK
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
кількість в упаковці: 1 шт
товар відсутній
5SNG 1000X170300 |
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Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1kA
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: LINPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1kA
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: LINPAK
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
5STB 13N6500 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.205kA; 1.405kA; Igt: 400mA
Case: Ø150/100mm
Mounting: Press-Pack
Max. off-state voltage: 6.5kV
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Load current: 1.405kA
Max. load current: 2.205kA
Max. forward impulse current: 22kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.205kA; 1.405kA; Igt: 400mA
Case: Ø150/100mm
Mounting: Press-Pack
Max. off-state voltage: 6.5kV
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Load current: 1.405kA
Max. load current: 2.205kA
Max. forward impulse current: 22kA
кількість в упаковці: 1 шт
товар відсутній
5STB 17N5200 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 2.83kA; 1.8kA; Igt: 400mA
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: Ø150/100mm
Max. off-state voltage: 5.2kV
Max. load current: 2.83kA
Load current: 1.8kA
Gate current: 400mA
Max. forward impulse current: 29kA
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 2.83kA; 1.8kA; Igt: 400mA
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: Ø150/100mm
Max. off-state voltage: 5.2kV
Max. load current: 2.83kA
Load current: 1.8kA
Gate current: 400mA
Max. forward impulse current: 29kA
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
кількість в упаковці: 1 шт
товар відсутній
5STB 18N4200 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 3.02kA; 1.92kA; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 4.2kV
Max. load current: 3.02kA
Load current: 1.92kA
Gate current: 400mA
Case: Ø150/100mm
Mounting: Press-Pack
Max. forward impulse current: 32kA
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 3.02kA; 1.92kA; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 4.2kV
Max. load current: 3.02kA
Load current: 1.92kA
Gate current: 400mA
Case: Ø150/100mm
Mounting: Press-Pack
Max. forward impulse current: 32kA
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
кількість в упаковці: 1 шт
товар відсутній
5STB 18U6500 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.48kA; 1.58kA; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 6.5kV
Max. load current: 2.48kA
Load current: 1.58kA
Gate current: 400mA
Case: Ø172/110mm
Mounting: Press-Pack
Max. forward impulse current: 29.7kA
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.48kA; 1.58kA; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 6.5kV
Max. load current: 2.48kA
Load current: 1.58kA
Gate current: 400mA
Case: Ø172/110mm
Mounting: Press-Pack
Max. forward impulse current: 29.7kA
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
кількість в упаковці: 1 шт
товар відсутній
5STB 24N2800 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.82kA; 2.43kA; Igt: 400mA
Mounting: Press-Pack
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
Type of thyristor: hockey-puck
Case: Ø150/100mm
Max. off-state voltage: 2.8kV
Max. load current: 3.82kA
Load current: 2.43kA
Gate current: 400mA
Max. forward impulse current: 43kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.82kA; 2.43kA; Igt: 400mA
Mounting: Press-Pack
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
Type of thyristor: hockey-puck
Case: Ø150/100mm
Max. off-state voltage: 2.8kV
Max. load current: 3.82kA
Load current: 2.43kA
Gate current: 400mA
Max. forward impulse current: 43kA
кількість в упаковці: 1 шт
товар відсутній
5STB 24Q2800 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 4.13kA; 2.63kA; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.8kV
Max. load current: 4.13kA
Load current: 2.63kA
Gate current: 400mA
Case: Ø151/100mm
Mounting: Press-Pack
Max. forward impulse current: 43kA
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 4.13kA; 2.63kA; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.8kV
Max. load current: 4.13kA
Load current: 2.63kA
Gate current: 400mA
Case: Ø151/100mm
Mounting: Press-Pack
Max. forward impulse current: 43kA
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
кількість в упаковці: 1 шт
товар відсутній
5STB 25U5200 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 3.1kA; 1.98kA; Igt: 400mA
Mounting: Press-Pack
Max. off-state voltage: 5.2kV
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
Case: Ø172/110mm
Max. load current: 3.1kA
Type of thyristor: hockey-puck
Load current: 1.98kA
Gate current: 400mA
Max. forward impulse current: 42kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 3.1kA; 1.98kA; Igt: 400mA
Mounting: Press-Pack
Max. off-state voltage: 5.2kV
Features of semiconductor devices: bi-directional controlled thyristor (BCT)
Case: Ø172/110mm
Max. load current: 3.1kA
Type of thyristor: hockey-puck
Load current: 1.98kA
Gate current: 400mA
Max. forward impulse current: 42kA
кількість в упаковці: 1 шт
товар відсутній
5STF 23H2040 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 2kV; Ifmax: 3.648kA; 2.322kA; Igt: 500mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2kV
Max. load current: 3.648kA
Load current: 2.322kA
Gate current: 500mA
Case: Ø101,5/63mm
Mounting: Press-Pack
Max. forward impulse current: 42kA
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 2kV; Ifmax: 3.648kA; 2.322kA; Igt: 500mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2kV
Max. load current: 3.648kA
Load current: 2.322kA
Gate current: 500mA
Case: Ø101,5/63mm
Mounting: Press-Pack
Max. forward impulse current: 42kA
Features of semiconductor devices: fast switching
кількість в упаковці: 1 шт
товар відсутній
5STF 28H2060 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 2kV; Ifmax: 4.189kA; 2.667kA; Igt: 500mA
Case: Ø101,5/63mm
Mounting: Press-Pack
Max. off-state voltage: 2kV
Features of semiconductor devices: fast switching
Type of thyristor: hockey-puck
Max. load current: 4.189kA
Load current: 2.667kA
Gate current: 500mA
Max. forward impulse current: 46.5kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 2kV; Ifmax: 4.189kA; 2.667kA; Igt: 500mA
Case: Ø101,5/63mm
Mounting: Press-Pack
Max. off-state voltage: 2kV
Features of semiconductor devices: fast switching
Type of thyristor: hockey-puck
Max. load current: 4.189kA
Load current: 2.667kA
Gate current: 500mA
Max. forward impulse current: 46.5kA
кількість в упаковці: 1 шт
товар відсутній
5STP 03D6500 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 610A; 390A; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 6.5kV
Max. load current: 610A
Load current: 390A
Gate current: 400mA
Case: Ø60/34mm
Mounting: Press-Pack
Max. forward impulse current: 4.7kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 610A; 390A; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 6.5kV
Max. load current: 610A
Load current: 390A
Gate current: 400mA
Case: Ø60/34mm
Mounting: Press-Pack
Max. forward impulse current: 4.7kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
5STP 03X6500 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 540A; 340A; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 6.5kV
Max. load current: 540A
Load current: 340A
Gate current: 400mA
Case: Ø60/34mm
Mounting: Press-Pack
Max. forward impulse current: 4.7kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 540A; 340A; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 6.5kV
Max. load current: 540A
Load current: 340A
Gate current: 400mA
Case: Ø60/34mm
Mounting: Press-Pack
Max. forward impulse current: 4.7kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
5STP 04D4200 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 740A; 470A; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 4.2kV
Max. load current: 740A
Load current: 470A
Gate current: 400mA
Case: Ø60/34mm
Mounting: Press-Pack
Max. forward impulse current: 7.1kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 740A; 470A; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 4.2kV
Max. load current: 740A
Load current: 470A
Gate current: 400mA
Case: Ø60/34mm
Mounting: Press-Pack
Max. forward impulse current: 7.1kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
5STP 04D5200 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 650A; 420A; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 5.2kV
Max. load current: 650A
Load current: 420A
Gate current: 400mA
Case: Ø60/34mm
Mounting: Press-Pack
Max. forward impulse current: 6.1kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 5.2kV; Ifmax: 650A; 420A; Igt: 400mA
Type of thyristor: hockey-puck
Max. off-state voltage: 5.2kV
Max. load current: 650A
Load current: 420A
Gate current: 400mA
Case: Ø60/34mm
Mounting: Press-Pack
Max. forward impulse current: 6.1kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
5STP 06D2800 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 970A; 620A; Igt: 400mA
Max. off-state voltage: 2.8kV
Max. load current: 970A
Load current: 620A
Gate current: 400mA
Max. forward impulse current: 8.8kA
Case: Ø60/34mm
Features of semiconductor devices: phase controlled thyristor (PCT)
Mounting: Press-Pack
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 970A; 620A; Igt: 400mA
Max. off-state voltage: 2.8kV
Max. load current: 970A
Load current: 620A
Gate current: 400mA
Max. forward impulse current: 8.8kA
Case: Ø60/34mm
Features of semiconductor devices: phase controlled thyristor (PCT)
Mounting: Press-Pack
Type of thyristor: hockey-puck
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 15932.28 грн |
10+ | 14483.76 грн |
5STP 07D1800 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.19kA; 760A; Igt: 400mA
Mounting: Press-Pack
Type of thyristor: hockey-puck
Case: Ø60/34mm
Max. off-state voltage: 1.8kV
Max. load current: 1.19kA
Load current: 760A
Gate current: 400mA
Max. forward impulse current: 9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.19kA; 760A; Igt: 400mA
Mounting: Press-Pack
Type of thyristor: hockey-puck
Case: Ø60/34mm
Max. off-state voltage: 1.8kV
Max. load current: 1.19kA
Load current: 760A
Gate current: 400mA
Max. forward impulse current: 9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
кількість в упаковці: 1 шт
товар відсутній
5STP 08F6500 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 1.34kA; 850A; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Type of thyristor: hockey-puck
Load current: 850A
Gate current: 400mA
Max. forward impulse current: 15.1kA
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 1.34kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 1.34kA; 850A; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Type of thyristor: hockey-puck
Load current: 850A
Gate current: 400mA
Max. forward impulse current: 15.1kA
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 1.34kA
кількість в упаковці: 1 шт
товар відсутній
5STP 08G6500 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 1.15kA; 730A; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Type of thyristor: hockey-puck
Load current: 730A
Gate current: 400mA
Max. forward impulse current: 15.1kA
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 1.15kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 1.15kA; 730A; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Type of thyristor: hockey-puck
Load current: 730A
Gate current: 400mA
Max. forward impulse current: 15.1kA
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 1.15kA
кількість в упаковці: 1 шт
товар відсутній
5STP 12F4200 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Max. off-state voltage: 4.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 17.3kA
Load current: 1.15kA
Max. load current: 1.8kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 4.2kV; Ifmax: 1.8kA; 1.15kA; Igt: 400mA
Case: Ø75/47mm
Mounting: Press-Pack
Max. off-state voltage: 4.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 17.3kA
Load current: 1.15kA
Max. load current: 1.8kA
кількість в упаковці: 1 шт
товар відсутній
5STP 12K6500 |
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Виробник: ABB
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA
Case: Ø102/63mm
Mounting: Press-Pack
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 31.5kA
Load current: 1.43kA
Max. load current: 2.25kA
кількість в упаковці: 1 шт
Category: Button thyristors
Description: Thyristor: hockey-puck; 6.5kV; Ifmax: 2.25kA; 1.43kA; Igt: 400mA
Case: Ø102/63mm
Mounting: Press-Pack
Max. off-state voltage: 6.5kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 400mA
Type of thyristor: hockey-puck
Max. forward impulse current: 31.5kA
Load current: 1.43kA
Max. load current: 2.25kA
кількість в упаковці: 1 шт
товар відсутній