ZVN4525E6TC Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 250V 230MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: SOT-23-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V
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Технічний опис ZVN4525E6TC Diodes Incorporated
Description: MOSFET N-CH 250V 230MA SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 1mA, Supplier Device Package: SOT-23-6, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V, Vgs (Max): ±40V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 3.65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 25 V.